untitled

Document overview

  • PDF pages: 6

Technical content

Features

  • Low Gate Charge
  • Low R DS(ON):
  • 28m Ω @VGS = 4.5V
  • 32m Ω @VGS = 2.5V
  • 40m Ω @VGS = 1.8V
  • Low Input/Output Leakage
  • Lead Free By Design/RoHS Compliant (Note 3)
  • Qualified to AEC-Q101 Standards for High Reliability
  • "Green" Device (Note 4) Mechanical Data
  • Case: SOT-26
  • Case Material - Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020D
  • Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208
  • Terminal Connections: See Diagram
  • Marking Information: See Page 4
  • Ordering Information: See Page 4
  • Weight: 0.008 grams (approximate) Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±8 V Drain Current (Note 1) Continuous TA = 25°C T A = 70°C ID 4.2 3.2 A Pulsed Drain Current (Note 2) IDM 30 A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Total Power Dissipation (Note 1) PD 0.98 W Thermal Resistance, Junction to Ambient (Note 1) t ≤10s RθJA 128 °C /W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 1. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t ≤10s. 2. Repetitive Rating, pulse widt h limited by junction temperature. 3. No purposefully added lead. SOT-26 TOP VIEW TOP VIEW Pin Configuration D/1 D2 D/1 D2 Equivalent Circuit S1 S2 D1 D2

Document number: DS31770 Rev. 4 - 2 2 of 6 www.diodes.com June 2009 © Diodes Incorporated DMG9926UDM NEW PRODUCT Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition STATIC CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS 20 ⎯ ⎯ V ID = 250μA, VGS = 0V Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1 μA VDS = 20V, VGS = 0V Gate-Body Leakage Current IGSS ⎯ ⎯ ±100 nA VDS = 0V, VGS = ±8V Gate Threshold Voltage VGS(th) 0.5 ⎯ 0.9 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance (Note 5) RDS (ON) ⎯ mΩ V GS = 4.5V, ID = 8.2A VGS = 2.5V, ID = 3.3A VGS = 1.8V, ID = 2.0A Forward Transfer Admittance |YFS| ⎯ 7 ⎯ S VDS = 10V, ID = 4A Diode Forward Voltage (Note 5) VSD ⎯ 0.7 0.9 V IS = 2.25A, VGS = 0V DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Ciss ⎯ 856 ⎯ pF VDS = 10V, VGS = 0V f = 1.0MHz Output Capacitance Coss ⎯ 83 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 78 ⎯ pF Gate Resisitance RG ⎯ 1.32 ⎯ Ω VGS = 0V, VDS = 0V, f = 1MHz SWITCHING CHARACTERISTICS Total Gate Charge Qg ⎯ 8.3 ⎯ nC VGS = 4.5V, VDS = 10V, ID = 8.2AGate-Source Charge Qgs ⎯ 1.3 ⎯ nC Gate-Drain Charge Qgd ⎯ 3.1 ⎯ nC Turn-On Delay Time tD(on) ⎯ 8.4 ⎯ ns VDD = 10V, VGS = 4.5V, RL = 10Ω, RG = 6Ω Turn-On Rise Time tr ⎯ 8.2 ⎯ ns Turn-Off Delay Time tD(off) ⎯ 40.4 ⎯ ns Turn-Off Fall Time tf ⎯ 8.9 ⎯ ns Notes: 5. Test pulse width t = 300ms. 6. Guaranteed by design. Not subject to production testing. 0 0.4 0.8 1.2 1.6 2 30I, D RAIN CURRENT (A)D Fig. 1 Typical Output Characteristics V , DRAIN-SOURCE VOLTAGE (V)DS V = 1.5VGS V = 2.5VGS V = 4.5VGS V = 8.0VGS V = 2.0VGS V = 3.0VGS 0.5 1 1.5 2 Fig. 2 Typical Transfer Characteristics V , GATE SOURCE VOLTAGE (V)GS 20I, D RAIN CURRENT (A)D V = 5 VDS T = - 5 5 ° CA T = 2 5 ° CA T = 1 2 5 ° CA T = 150°CA T = 8 5 ° CA

Document number: DS31770 Rev. 4 - 2 3 of 6 www.diodes.com June 2009 © Diodes Incorporated DMG9926UDM NEW PRODUCT 0 5 10 15 20 25 30 Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage I , DRAIN-SOURCE CURRENT (A)D 0.01 0.02 0.03 0.04 0.06 R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) Ω 0.05 V = 1.8VGS V = 4.5VGS V = 2.5VGS 04 81 2 1 6 2 0 I , DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and T emperature D 0.01 0.02 0.03 0.04 0.05 R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) Ω V = 4.5VGS T = -55°CA T = 2 5 ° CA T = 8 5 ° CA T = 125°CA T = 150°CA Fig. 5 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C)J 0.6 0.8 1.0 1.2 1.4 1.8 R , DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) DS(ON) 1.6 V = 4.5V I = 8.2A GS D V = 2.5V I = 5 A GS D Fig. 6 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C)J 0.01 0.02 0.03 0.04 0.05 R , DRAIN-SOURCE ON-RESISTANCE ( ) DS(ON) Ω V = 4.5V I = 8.2A GS D V = 2.5V I = 5 A GS D Fig. 7 Gate Threshold Variation vs. Ambient Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)A 0.2 0.4 0.6 0.8 1.0 V, GATE THRESHOLD VOLTAGE (V)GS(TH) I = 1 m AD I = 250µAD 0.01 0.1 V , SOURCE-DRAIN VOLTAGE (V)SD Fig. 8 Diode Forward Voltage vs. Current I, S OURCE CURRENT (A)S T = 25°CA

Document number: DS31770 Rev. 4 - 2 4 of 6 www.diodes.com June 2009 © Diodes Incorporated DMG9926UDM NEW PRODUCT 100 1,000 10,000 0 5 10 15 20 Fig. 9 Typical Capacitance V , DRAIN-SOURCE VOLTAGE (V)DS C, CAPACITANCE (pF) f = 1MHz Ciss Coss Crss 0.1 100 1,000 10,000 02 46 81 0 1 2 1 4 1 6 1 8 2 0 Fig. 10 Typical Drain-Source Leakage Current vs. Drain-Source Voltage V , DRAIN-SOURCE VOLTAGE (V) DS I, L E A K AGE CURRENT (nA)DSS T = -55°CA T = 2 5 ° CA T = 8 5 ° CA T = 125°CA T = 150°CA Fig. 11 Transient Thermal Response t , PULSE DURATION TIME (s)1 0.001 0.01 0.1 r(t), TRANSIENT THERMAL RESISTANCE T - T = P * R ( t ) Duty Cycle, D = t /t JA J A θ R (t) = r(t) * θJA R R = 130°C/W θ θ JA JA P(pk) D = 0.7 D = 0.5 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 D = Single Pulse D = 0.9 Ordering Information (Note 7) Part Number Case Packaging DMG9926UDM-7 SOT-26 3000/Tape & Reel Marking Information Date Code Key Year 2008 2009 2010 2011 2012 2013 2014 2015 Code V W X Y Z A B C Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DMG = Product Type Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September) DMG YM

Document number: DS31770 Rev. 4 - 2 5 of 6 www.diodes.com June 2009 © Diodes Incorporated DMG9926UDM NEW PRODUCT Package Outline Dimensions Suggested Pad Layout SOT-26 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D ⎯ ⎯ 0.95 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 α 0° 8° ⎯ All Dimensions in mm Dimensions Value (in mm) Z 3.20 G 1.60 X 0.55 Y 0.80 C1 2.40 C2 0.95 A M J LD B C H K X Z Y C2C2 G

Document number: DS31770 Rev. 4 - 2 6 of 6 www.diodes.com June 2009 © Diodes Incorporated DMG9926UDM NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. Diodes Incorporated does not assume any liability ari sing out of the application or use of this document or an y product described herein; neither does Di odes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or us er of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. Should Customers purchase or use Diodes Inco rporated products for any unintended or una uthorized application, Customers shall i ndemnify and hold Diodes Incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support dev ice or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporate d and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2009, Diodes Incorporated www.diodes.com