DMG963H10R PANASONICBATTERY | Alldatasheet
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Ver. DEDPublication date: February 2013 1 DMG963H1 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits DMG563H1 in SSMini5 type package Features Low collector-emitter saturation voltage VCE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: T1 Basic Part Number DRC2144E + DRA2143X (Collector-base connection) Packaging DMG963H10R Embossed type (Thermo-compression sealing): 8 000 pcs / reel (standard) Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Tr1 Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 50 V Collector current IC 100 mA Tr2 Collector-base voltage (Emitter open) VCBO –50 V Collector-emitter voltage (Base open) VCEO –50 V Collector current IC –100 mA Overall Total power dissipation PT 125 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Unit: mm 1: Emitter (Tr1) 2: Base (Tr1) 3: Emitter (Tr2) 4: Collecter (Tr2) 5: Base (Tr2) Collecter (Tr1) Panasonic SSMini5-F4-B JEITA SC-107BB Code SOT-665 (C2) Tr1 Tr2 (B2, C1) (E1) (E2) (B1) R2R2 Resistance value Tr1 R1 47 kΩ R2 47 kΩ Tr2 R1 4.7 kΩ R2 10 kΩ
Ver. DED DMG963H1 Electrical Characteristics Ta = 25°C±3°C Tr1 Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 50 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 0.1 mA Forward current transfer ratio hFE VCE = 10 V, IC = 5 mA 80 Collector-emitter saturation voltage VCE(sat) IC = 10 mA, IB = 0.5 mA 0.25 V Input voltage (ON) VI(on) VCE = 0.2 V, IC = 5 mA 3.6 V Input voltage (OFF) VI(off) VCE = 5 V, IC = 100 µA 0.8 V Input resistance R1 –30% 47 +30% kΩ Resistance ratio R1 / R2 0.8 1.0 1.2 Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Tr2 Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = –10 µA, IE = 0 –50 V Collector-emitter voltage (Base open) VCEO IC = –2 mA, IB = 0 –50 V Collector-base cutoff current (Emitter open) ICBO VCB = –50 V, IE = 0 – 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = –50 V, IB = 0 – 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = –6 V, IC = 0 –1.0 mA Forward current transfer ratio hFE VCE = –10 V, IC = –5 mA 30 Collector-emitter saturation voltage VCE(sat) IC = –10 mA, IB = – 0.5 mA – 0.25 V Input voltage (ON) VI(on) VCE = – 0.2 V, IC = –5 mA –1.7 V Input voltage (OFF) VI(off) VCE = –5 V, IC = –100 µA – 0.6 V Input resistance R1 –30% 4.7 +30% kΩ Resistance ratio R1 / R2 0.37 0.47 0.57 Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Ver. DED DMG963H1 IO VIN VIN IO 0 2.01.51.00.510−3 10−1 10−2 DMG963H1(Tr1)_IO-VIN VO = 5 V Input voltage VIN (V) Output current IO (mA) 25°C −30°C Ta = 85°C 0.1 0.1 100 1 1 0 100 Input voltage VIN (V) Output current IO (mA) DMG963H1(Tr1)_VIN-IO VO = 0.2 V 25°C 85°C Ta = −30°C PT Ta 0 20016040 12080 100 150 125 DMG963H1_PT-Ta Ambient temperature Ta (°C) Total power dissipation PT (mW) IC VCE hFE IC VCE(sat) IC 0 122 104 8 6 120 100 Collector current IC (mA) Collector-emitter voltage VCE (V) DMG963H1(Tr1)_IC-VCE Ta = 25°C IB = 500 µA 300 µA 350 µA 400 µA450 µA 200 µA 250 µA 150 µA 100 µA 50 µA 0.1 500 300 400 200 100 1 1 0 100 Forward current transfer ratio hFE Collector current IC (mA) DMG963H1(Tr1)_hFE-IC 25°C −30°C Ta = 85°C VCE = 10 V 0.01 0.1 0.1 1 1 0 100 Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (mA) DMG963H1(Tr1)_VCEsat-IC 25°C −30°C Ta = 85°C IC / IB = 20 Common characteristics chart Characteristics charts of Tr1
Ver. DED DMG963H1 IC VCE hFE IC VCE(sat) IC −120 −100 −80 −60 −40 −20 Collector current IC (mA) Collector-emitter voltage VCE (V) DMG963H1(Tr2)_IC-VCE Ta = 25°C IB = −800 µA −500 µA −600 µA −700 µA −300 µA −400 µA −200 µA −100 µA − 0.1 300 250 200 150 100 −1 −10 −100 Forward current transfer ratio hFE Collector current IC (mA) DMG963H1(Tr2)_hFE-IC 25°C −30°C Ta = 85°C VCE = −10 V − 0.01 − 0.1 − 0.1 −10 −1 −10 −100 DMG963H1(Tr2)_VCEsat-IC Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (mA) 25°C −30°C Ta = 85°C IC / IB = 20 IO VIN VIN IO −10−1 −10−2 −10 DMG963H1(Tr2)_IO-VIN VO = −5 V Input voltage VIN (V) Output current IO (mA) 25°C −30°C Ta = 85°C − 0.1 − 0.1 −10 −100 −1 −10 −100 Input voltage VIN (V) Output current IO (mA) DMG963H1(Tr2)_VIN-IO VO = − 0.2 V 25°C 85°C Ta = −30°C Characteristics charts of Tr2
Ver. DED DMG963H1 SSMini5-F4-B Unit: mm Land Pattern (Reference) (Unit: mm)
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