DMG8880LK3 DIODES | Alldatasheet

Document overview

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  • PDF pages: 6

Technical content

Features

  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Lead Free By Design/RoHS Compliant (Note 1)
  • "Green" Device (Note 2)
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data
  • Case: TO252-3L
  • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminal Connections: See Diagram Below
  • Weight: 0.33 grams (approximate) Ordering Information (Note 3) Part Number Case Packaging DMG8880LK3-13 TO252-3L 2500 / Tape & Reel Notes: 1. No purposefully added lead. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information TO252-3L Top View YYWW G8880L G8880L = Product Type Marking Code = Manufacturer’s Marking YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01 ~ 53) D S G Equivalent Circuit PIN OUT -TOP VIEW GS D D

Document number: DS32052 Rev. 3 - 2 2 of 6 www.diodes.com October 2010 © Diodes Incorporated DMG8880LK3 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 4) VGS = 10V Steady State TA = 25°C TA = 85°C ID 11 8 A Continuous Drain Current (Note 5) VGS = 10V Steady State TA = 25°C TA = 85°C ID 16.5 12 A Pulsed Drain Current (Note 6) IDM 48 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 4) PD 1.68 W Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4) RθJA 74.3 °C/W Power Dissipation (Note 5) PD 4.1 W Thermal Resistance, Junction to Ambient @TA = 25°C (Note 5) RθJA 30.8 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 30 - - V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current TJ = 25°C IDSS - - 1.0 μA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS - - ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) 1.0 1.5 2.0 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS (ON) - 7.0 9.6 9.3 14 mΩ VGS = 10V, ID = 11.6A VGS = 4.5V, ID = 10.7A Forward Transfer Admittance |Yfs| - 22 - S VDS = 15V, ID = 15A Diode Forward Voltage VSD - 0.7 1.0 V VGS = 0V, ISD = 2.1A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss - 1289 - pF VDS = 15V, VGS = 0V, f = 1.0MHz Output Capacitance Coss - 187 - pF Reverse Transfer Capacitance Crss - 162 - pF Gate Resistance Rg - 0.97 - Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge at 10V Qg - 27.6 - nC VGS = 10V, VDS = 15V, ID = 11.6A, Ig = 1.0mA Total Gate Charge at 5V Qg - 14.4 - nC VGS = 5V, VDS = 15V, ID = 11.6A Gate-Source Charge Qgs - 3.6 - nC Gate-Drain Charge Qgd - 4.9 - nC Turn-On Delay Time tD(on) - 7.04 - ns VDD = 15V, VGS = 10V, RG = 11Ω, ID = 11.6A, RL = 1.3Ω Turn-On Rise Time tr - 17.52 - ns Turn-Off Delay Time tD(off) - 36.13 - ns Turn-Off Fall Time tf - 19.67 - ns Notes: 4. Device mounted on FR-4 PCB, with minimum recommended pad layout, single sided. 5. Device mounted on 2” x 2” FR-4 PCB with high coverage 2oz. copper, single sided. 6. Repetitive rating, pulse width limited by junction temperature and current limited by package. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing.

Document number: DS32052 Rev. 3 - 2 3 of 6 www.diodes.com October 2010 © Diodes Incorporated DMG8880LK3 0 0.5 1.0 1.5 2.0 Fig. 1 Typical Output Characteristics V , DRAIN-SOURCE VOLTAGE (V)DS I, D RAIN CURRENT (A)D V = 2.5VGSV = 2.2VGS V = 3.0VGS V = 3.2VGS V = 3.5VGS V = 4.5VGS V = 8.0VGS 0123 4 Fig. 2 Typical Transfer Characteristics V , GATE SOURCE VOLTAGE (V)GS I, D RAIN CURRENT (A)D V = 5 VDS T = -55°CA T = 2 5 ° CA T = 1 2 5 ° CA T = 150°CA T = 8 5 ° CA 0.005 0.010 0.015 0.020 01 02 03 04 0 5 0 Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage I , DRAIN-SOURCE CURRENT (A)D R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) Ω V = 4.5VGS V = 8.0VGS 0.01 0.02 0.03 0 5 10 15 20 25 30 I , DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and T emperature D R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) Ω T = -55°CA T = 25°CA T = 85°CA T = 125°CA T = 150°CA V = 4.5VGS 0.5 0.7 0.9 1.1 1.3 1.5 1.7 Fig. 5 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C)J R , DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) DS(ON) V = 4.5V I = 10A GS D V = 10V I = 20A GS D 0.005 0.010 0.015 0.020 0.025 Fig. 6 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C)J R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) Ω V = 10V I = 2 0 A GS D V = 4.5V I = 10A GS D

Document number: DS32052 Rev. 3 - 2 4 of 6 www.diodes.com October 2010 © Diodes Incorporated DMG8880LK3 0.4 0.8 1.2 1.6 2.0 2.4 Fig. 7 Gate Threshold Variation vs. Ambient Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)A V , GATE THRESHOLD VOLTAGE (V)GS(TH) I = 250µAD I = 1 m AD V , SOURCE-DRAIN VOLTAGE (V) SD Fig. 8 Diode Forward Voltage vs. Current I, S OURCE CURRENT (A)S T = 2 5 ° CA 100 1,000 10,000 0 5 10 15 20 25 30 Fig. 9 Typical Capacitance V , DRAIN-SOURCE VOLTAGE (V)DS C, CAPACITANCE (pF) f = 1MHz Ciss Coss Crss 100 1,000 10,000 0 5 10 15 20 25 30 I, D RAIN-SOURCE LEAKAGE CURRENT (nA) DSS Fig. 10 Typical Drain-Source Leakage Current vs. Drain-Source Voltage V , DRAIN-SOURCE VOLTAGE (V) DS T = 2 5 ° CA T = 8 5 ° CA T = 125°CA T = 1 5 0 ° CA 0.001 0.01 0.1 r(t), TRANSIENT THERMAL RESISTANCE Fig. 11 Transient Thermal Response t , PULSE DURATION TIME (s)1 T - T = P * R ( t ) Duty Cycle, D = t /t JA J A θ R (t) = r(t) * θJA R R = 76°C/W θ θ JA JA P(pk) D = 0.7 D = 0.5 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 D = Single Pulse D = 0.9

Document number: DS32052 Rev. 3 - 2 5 of 6 www.diodes.com October 2010 © Diodes Incorporated DMG8880LK3 Package Outline Dimensions Suggested Pad Layout TO252-3L Dim Min Typ Max A 2.19 2.29 2.39 A1 0.97 1.07 1.17 b 0.64 0.76 0.88 b2 0.76 0.95 1.14 b3 5.21 5.33 5.50 C2 0.45 0.51 0.58 D 6.00 6.10 6.20 E 6.45 6.58 6.70 e 2.286 Typ. H 9.40 9.91 10.41 L 1.40 1.59 1.78 L3 0.88 1.08 1.27 L4 0.64 0.83 1.02 a 0° - 10° All Dimensions in mm Dimensions Value (in mm) Z 11.6 X1 1.5 X2 7.0 Y1 2.5 Y2 7.0 C 6.9 E1 2.3 E SEATING PLANEL A D e Hb a C Z

Document number: DS32052 Rev. 3 - 2 6 of 6 www.diodes.com October 2010 © Diodes Incorporated DMG8880LK3 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or an y product described herein; neither does Di odes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or us er of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. Should Customers purchase or use Diodes Inco rporated products for any unintended or una uthorized application, Customers shall i ndemnify and hold Diodes Incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support dev ice or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporate d and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2010, Diodes Incorporated www.diodes.com