DMG8601UFG

Document overview

  • Manufacturer or author: Diodes Incorporated
  • PDF pages: 6

Technical content

Features

  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • ESD Protected Up To 2KV
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data
  • Case: U-DFN3030-8
  • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals: Finish - NiPdAu ov er Copper lead frame. Solderable per MIL-STD-202, Method 208 e4
  • Polarity: See Diagram
  • Weight: 0.0172 grams (approximate) Ordering Information (Note 4) Part Number Case Packaging DMG8601UFG-7 U-DFN3030-8 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directiv e 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more in formation about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information Bottom View Bottom View Pin Configuration Top View Equivalent Circuit Top View S1G1S2G2 D1/D2 567 8 432 1 5 6 7 8 4 3 2 1 2N4 = Product marking code YYWW = Date code marking YY = Last digit of year (ex: 09 for 2009) WW = Week code (01 to 53) YYWW 2N4 U-DFN3030-8 ESD PROTECTED TO 2kV

Document number: DS31788 Rev. 5 - 2 2 of 6 www.diodes.com September 2012 © Diodes Incorporated DMG8601UFG NEW PRODUCT Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current (Note 5) Steady State TA = +25°C TA = +70°C ID 6.1 5.2 A Pulsed Drain Current IDM 27 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) PD 0.92 W Thermal Resistance, Junction to Ambient @TA = +25°C RθJA 136 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BVDSS 20 - - V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current TJ = 25°C IDSS - - 1.0 μA VDS = 20V, VGS = 0V Gate-Source Leakage IGSS - - ±10 μA VGS = ±10V, VDS = 0V Gate-Source Breakdown Voltage BVSGS ±12 - - V VDS = 0V, IG = ±250μA ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(th) 0.35 - 1.05 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS (ON) mΩ VGS = 4.5V, ID = 6.5A VGS = 2.5V, ID = 5.5A VGS = 1.8V, ID = 3.5A Forward Transfer Admittance |Yfs| - 10 - S VDS = 10V, ID = 5A Diode Forward Voltage VSD - 0.7 1.0 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS Input Capacitance Ciss - 143 - pF VDS = 10V, VGS = 0V, f = 1.0MHz Output Capacitance Coss - 74 - pF Reverse Transfer Capacitance Crss - 29 - pF Gate Resistance Rg - 202 - Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge Qg - 8.8 - nC VGS = 4.5V, VDS = 10V, ID = 6.5A Gate-Source Charge Qgs - 1.4 - nC Gate-Drain Charge Qgd - 3.0 - nC Turn-On Delay Time tD(on) - 53 - ns VDD = 10V, VGS = 4.5V, RL = 10Ω, RG = 6Ω Turn-On Rise Time tr - 78 - ns Turn-Off Delay Time tD(off) - 562 - ns Turn-Off Fall Time tf - 234 - ns Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout. 6. Short duration pulse test used to minimize self-heating effect.

Document number: DS31788 Rev. 5 - 2 3 of 6 www.diodes.com September 2012 © Diodes Incorporated DMG8601UFG NEW PRODUCT Fig. 1 Typical Output Characteristic V , DRAIN-SOURCE VOLTAGE (V) DS I, D RAIN CURRENT (A)D V = 2.0VGS V = 3.0VGS V = 4.5VGSV = 8.0VGS V = 2.5VGS Fig. 2 Typical Transfer Characteristic V , GATE-SOURCE VOLTAGE (V)GS I, D RAIN CURRENT (A)D T = -55°CA T = 2 5 ° CA T = 8 5 ° CAT = 125°CA T = 150°CA V = 5 VDS 0.01 0.02 0.03 0.04 0.05 0 5 10 15 20 25 30 Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage I , DRAIN-SOURCE CURRENT (A)D V = 4.5VGS V = 2.5VGS V = 1.8VGS R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) Ω 0 5 10 15 20 25 30 I , DRAIN CURRENT (A)D Fig. 4 Typical On-Resistance vs. Drain Current and T emperature 0.01 0.02 0.03 0.04 0.05 R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) Ω T = -55°CA T = 2 5 ° CA T = 8 5 ° CA T = 125°CA T = 150°CA V = 4.5VGS 0.5 0.7 0.9 1.1 1.3 1.5 1.7 Fig. 5 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)A R , DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) DSON V = 5.0V I = 10A GS D V = 2.5V I = 5.5A GS D Fig. 6 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)A 0.01 0.02 0.03 0.04 0.05 R , DRAIN-SOURCE ON-RESISTANCE ( )DSON Ω V = 5 . 0 V I = 1 0 A GS D V = 2.5V I = 5.5A GS D

Document number: DS31788 Rev. 5 - 2 4 of 6 www.diodes.com September 2012 © Diodes Incorporated DMG8601UFG NEW PRODUCT 0.4 0.8 1.2 1.6 Fig. 7 Gate Threshold Variation vs. Ambient Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)A V , GATE THRESHOLD VOLTAGE (V)GS(TH) I = 1 m AD I = 250µAD Fig. 8 Diode Forward Voltage vs. Current V , SOURCE-DRAIN VOLTAGE (V)SD 20I, S OURCE CURRENT (A)S T = 2 5 ° CA 04 81 2 1 6 2 0 Fig. 9 Typical Leakage Current vs. Drain-Source Voltage V , DRAIN-SOURCE VOLTAGE (V) DS 100 1,000 100,000I , LEAKA GE CURRENT (nA) DSS 10,000 T = 2 5 ° CA T = 8 5 ° CA T = 125°CA T = 150°CA Fig. 10 Gate-Source Leakage Current vs. Voltage 12345678 V , GATE-SOURCE VOLTAGE (V) GS 100 1,000 10,000I, L E A K AGE CURRENT (nA) GSS T = -55°CA T = 2 5 ° CA T = 8 5 ° CA T = 125°CA T = 150°CA Fig. 11 Gate-Source Leakage Current vs. Voltage 100 1,000 10,000 12345678 -V , GATE-SOURCE VOLTAGE (V) GS I , LEAKA GE CURRENT (nA) GSS T = -55°CA T = 2 5 ° CA T = 8 5 ° CA T = 125°CA T = 150°CA

Document number: DS31788 Rev. 5 - 2 5 of 6 www.diodes.com September 2012 © Diodes Incorporated DMG8601UFG NEW PRODUCT Fig. 12 Transient Thermal Response t , PULSE DURATION TIME (s)1 0.001 0.01 0.1 r(t), TRANSIENT THERMAL RESISTANCE T - T = P * R ( t ) Duty Cycle, D = t /t JA J A θ R (t) = r(t) * θJA R R = 136°C/W θ θ JA JA P(pk) D = 0.7 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 D = Single Pulse D = 0.9 D = 0.5 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. U-DFN3030-8 Dim Min Max Typ A 0.57 0.63 0.60 A1 0 0.05 0.02 A3 ⎯ ⎯ 0.15 b 0.29 0.39 0.34 D 2.90 3.10 3.00 D2 2.19 2.39 2.29 e ⎯ ⎯ 0.65 E 2.90 3.10 3.00 E2 1.64 1.84 1.74 L 0.30 0.60 0.45 All Dimensions in mm Dimensions Value (in mm) Z 2.59 G 0.11 X1 2.49 X2 0.65 Y 0.39 C 0.65 D A L E SEATING PLANE e b R0.200 Z G YC

Document number: DS31788 Rev. 5 - 2 6 of 6 www.diodes.com September 2012 © Diodes Incorporated DMG8601UFG NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. Diodes Incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. Should Customers purchase or use Diodes Inco rporated products for any unintended or una uthorized application, Customers shall i ndemnify and hold Diodes Incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporate d and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2012, Diodes Incorporated www.diodes.com