DMG7702SFG_15 DIODES | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

Features

  • DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: ƒ Low R DS(ON) – minimize conduction losses ƒ Low V SD – reducing the losses due to body diode conduction ƒ Low Q rr – lower Qrr of the integrated Schottky reduces body diode switching losses ƒ Low gate capacitance (Q g/Qgs) ratio – reduces risk of shoot- through or cross conduction currents at high frequencies
  • Small form factor thermally efficient package enables higher density end products
  • Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data
  • Case: POWERDI3333-8
  • Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminal Connections Indicator: See diagram
  • Terminals: Finish – Matte Ti n annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208
  • Weight: 0.072 grams (approximate Ordering Information (Note 4) Part Number Case Packaging DMG7702SFG-7 POWERDI3333-8 2000/Tape & Reel DMG7702SFG-13 POWERDI3333-8 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directiv e 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more in formation about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Bottom View 1 234 8765 Top View Pin Configuration Internal Schematic Source Gate Drain S S S G D D D D Pin 1 Top View

Document number: DS35248 Rev. 6 - 2 2 of 8 www.diodes.com July 2012 © Diodes Incorporated DMG7702SFG Marking Information Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +70°C ID 12 9.5 A t<10s TA = +25°C TA = +70°C ID 16.0 12.7 A Continuous Drain Current (Note 6) VGS = 4.5V Steady State TA = +25°C TA = +70°C ID 9.5 7.5 A t<10s TA = +25°C TA = +70°C ID 13.0 10.3 A Pulsed Drain Current (10μs pulse, duty cycle = 1%) IDM 90 A Maximum Continuous Body Diode Forward Current (Note 6) IS 3.5 A Avalanche Current (Note 7) L = 0.1mH IAR 17 A Repetitive Avalanche Energy (Note 7) L = 0.1mH EAR 43 mJ Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) TA = +25°C PD 0.89 W TA = +70°C 0.55 Thermal Resistance, Junction to Ambient (Note 5) Steady state RθJA 145 °C/W t<10s 74 Total Power Dissipation (Note 6) TA = +25°C PD 2.2 W TA = +70°C 1.3 Thermal Resistance, Junction to Ambient (Note 6) Steady state RθJA 58 °C/W t<10s 31 Thermal Resistance, Junction to Case (Note 6) RθJC 11 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C G72 = Product Type Marking Code YYWW = Date Code Marking YY = Last digit of year (ex: 11 = 2011) WW = Week code (01 ~ 53) G72 YYWW

Document number: DS35248 Rev. 6 - 2 3 of 8 www.diodes.com July 2012 © Diodes Incorporated DMG7702SFG 0.1 1 10 100 -V , DRAIN-SOURCE VOLTAGE (V) Fig. 1 SOA, Safe Operation Area DS 0.01 0.1 100 -I , D RAIN CURRENT (A)D R Limited DS(on) DC P = 10sW P = 1 sW P = 100msW P = 10msW P = 1 m sW P = 100µsW P = 1 0 sW µ T = 150°C T = 2 5 ° C Single Pulse J(max) A t1, PULSE DURATION TIME (sec) Fig. 2 Single Pulse Maximum Power Dissipation 100 0.001 0.01 0.1 1 10 100 1,000 Single Pulse R = 6 1 C / W R = r * R T - T = P * R θ θθ θ JA JA(t) (t) JA JA J A ( t ) 0.0001 P , PEAK TRANSIENT POIWER (W)(PK) t1, PULSE DURATION TIME (sec) Fig. 3 Transient Thermal Resistance R = r * RθJA(t) (t) θ θ JA JAR = 6 1 C / W Duty Cycle, D = t1/t2 0.001 0.01 0.1 r(t), TRANSIENT THERMAL RESISTANCE D = 0.5 D = 0.7 D = 0.9 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 D = Single Pulse

Document number: DS35248 Rev. 6 - 2 4 of 8 www.diodes.com July 2012 © Diodes Incorporated DMG7702SFG Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS 30 - - V VGS = 0V, ID = 250 μA Zero Gate Voltage Drain Current IDSS - - 100 μA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS - - ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(th) 1.0 1.5 2.5 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS (ON) - 7.3 10 mΩ VGS = 10V, ID = 13.5A - 10 15 VGS = 4.5V, ID = 11A Forward Transfer Admittance |Yfs| - 22 - S VDS = 5V, ID = 10.0A Diode Forward Voltage VSD - 0.45 0.55 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss - 1296 4310 pF VDS = 15V, VGS = 0V, f = 1.0MHz Output Capacitance Coss - 415 - pF Reverse Transfer Capacitance Crss - 204 - pF Gate Resistance Rg 0.26 1.6 2.7 Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge VGS = 4.5V Qg - 14.7 - nC VDS = 15V, VGS = 10V, ID = 13.5ATotal Gate Charge VGS = 10V Qg - 31.6 - nC Gate-Source Charge Qgs - 3.5 - nC Gate-Drain Charge Qgd - 5.0 - nC Turn-On Delay Time tD(on) - 15.8 - ns VGS = 10V, VDS = 15V, RG = 3Ω, ID = 8.8A Turn-On Rise Time tr - 27.8 - ns Turn-Off Delay Time tD(off) - 29.7 - ns Turn-Off Fall Time tf - 13.6 - ns Reverse Recovery Time trr - 13.1 - ns IF = 13.5A, di/dt = 100A/μs Reverse Recovery Charge Qrr - 4.3 - nC IF = 13.5A, di/dt = 100A/μs Notes: 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 0 0.5 1.0 1.5 2.0 Fig. 4 Typical Output Characteristic V , DRAIN-SOURCE VOLTAGE (V)DS 30I, D RAIN CURRENT (A)D V = 2.0VGS V = 3.0VGS V = 3.5VGS V = 4.5VGS V = 4.0VGS V = 2.5VGS Fig. 5 Typical Transfer Characteristic V , GATE-SOURCE VOLTAGE (V)GS 30I, D RAIN CURRENT (A)D V = 85°CGS V = 125°CGS V = 25°CGS V = - 5 5 ° CGS V = 150°CGS V = 5 VDS

Document number: DS35248 Rev. 6 - 2 5 of 8 www.diodes.com July 2012 © Diodes Incorporated DMG7702SFG 01 0 2 015 25 30 Fig. 6 Typical On-Resistance vs. Drain Current and Gate Voltage I , DRAIN-SOURCE CURRENT (A)D 0.05R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) Ω 0.04 0.01 0.02 0.03 V = 2.5VGS V = 4.5VGS V = 10VGS 0.005 0.010 0.015 0.020 0 5 10 15 20 25 30 I , DRAIN CURRENT (A)D Fig. 7 Typical On-Resistance vs. Drain Current and T emperature R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) Ω T = 8 5 ° CA T = 2 5 ° CA T = -55°CA T = 150°CA V = 10VGS T = 125°CA Fig. 8 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)A R , DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) DSON 0.6 0.8 1.0 1.2 1.4 1.6 V = 1 0 V I = 5 A GS D V = 1 0 V I = 10A GS D Fig. 9 On-Resistance Variation with T emperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)A 0.01 0.03R , DRAIN-SOURCE ON-RESISTANCE ( )DSON ΩR , DRAIN-SOURCE ON-RESISTANCE ( )DSON Ω 0.02 V = 10V I = 1 0 A GS D V = 10V I = 5 A GS D Fig. 10 Gate Threshold Variation vs. Ambient Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)A 0.5 1.0 1.5 2.0 2.5 3.0 V, GATE THRESHOLD VOLTAGE (V)GS(TH) I = 1 m AD I = 250µAD Fig. 11 Diode Forward Voltage vs. Current V , SOURCE-DRAIN VOLTAGE (V)SD 0.2 I, S OURCE CURRENT (A)S T = 25°CA

Document number: DS35248 Rev. 6 - 2 6 of 8 www.diodes.com July 2012 © Diodes Incorporated DMG7702SFG 0 5 10 15 20 1,000 10,000C, CAPACITANCE (pF) 100 Fig. 12 Typical Total Capacitance V , DRAIN-SOURCE VOLTAGE (V)DS Ciss Crss Coss f = 1MHz 01 02 0 3 0 Fig. 13 Typical Leakage Current vs. Drain-Source Voltage V , DRAIN-SOURCE VOLTAGE (V) DS 100 1,000 10,000I, L E A K AGE CURRENT (µA) DSS T = 25°CA T = 85°CA T = 125°CA T = 150°CA 0 5 10 15 20 25 30 35 Q , OTAL GATE CHARGE (nC) Fig. 14 Gate-Source Voltage vs. Total Gate Charge g T V , ATE-SOURCE VOLTAGE (V)GS G V = 15V I = 13.5A DS D

Document number: DS35248 Rev. 6 - 2 7 of 8 www.diodes.com July 2012 © Diodes Incorporated DMG7702SFG Package Outline Dimensions Suggested Pad Layout POWERDI3333-8 Dim Min Max Typ D 3.25 3.35 3.30 E 3.25 3.35 3.30 D2 2.22 2.32 2.27 E2 1.56 1.66 1.61 A 0.75 0.85 0.80 A1 0 0.05 0.02 A3 − − 0.203 b 0.27 0.37 0.32 b2 − − 0.20 L 0.35 0.45 0.40 L1 − − 0.39 e − − 0.65 Z − − 0.515 All Dimensions in mm Dimensions Value (in mm) C 0.650 G 0.230 G1 0.420 Y 3.700 Y1 2.250 Y2 1.850 Y3 0.700 X 2.370 X2 0.420 A D E (4x) L (4x) (3x) b (8x)eZ (4x) Pin 1 ID 14 X Y X2 C G

Document number: DS35248 Rev. 6 - 2 8 of 8 www.diodes.com July 2012 © Diodes Incorporated DMG7702SFG IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or an y product described herein; neither does Di odes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or us er of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated a nd all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. Should Customers purchase or use Diodes Inco rporated products for any unintended or una uthorized application, Customers shall i ndemnify and hold Diodes Incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporate d and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2012, Diodes Incorporated www.diodes.com