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Document number: DS35620 Rev. 6 - 3 1 of 6 www.diodes.com December 2017 © Diodes Incorporated DMG7408SFG ADVANCE INFORMATION ADVANCE INFORMATION 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary BVDSS RDS(ON) Max ID Max TA = +25° C 30V 23mΩ @ VGS = 10V 7.0A 33mΩ @ VGS = 4.5V 6.0A Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Backlighting Power Management Functions DC-DC Converters Features and Benefits 100% Unclamped Inductive Switch (UIS) Test in Production Low RDS(ON) – Ensures On State Losses Are Minimized Small Form Factor Thermally Efficient Package Enables Higher Density End Products Occupies Just 33% of The Board Area Occupied by SO-8 Enabling Smaller End Product Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Case: PowerDI®3333-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (Approximate) Ordering Information (Note 4) Part Number Case Packaging DMG7408SFG-7 PowerDI3333-8 2000/Tape & Reel DMG7408SFG-13 PowerDI3333-8 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Hal ogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information Top View Internal Schematic Bottom View S S S G D D D D Pin 1 Top View PowerDI3333-8 N34 = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 17 = 2017) WW = Week Code (01 to 53) N34 YYWW G78 = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 17 = 2017) WW = Week Code (01 to 53) G78 YYWW NOT RECOMMENDED FOR NEW DESIGN USE DMN3025SFV NOT RECOMMENDED FOR NEW DESIGN USE DMN3025SFV PowerDI is a registered trademark of Diodes Incorporated.
Document number: DS35620 Rev. 6 - 3 2 of 6 www.diodes.com December 2017 © Diodes Incorporated DMG7408SFG ADVANCE INFORMATION ADVANCE INFORMATION Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 5) VGS = 10V Steady State TA = +25° C TA = +70° C ID 7.0 5.5 A t<10s TA = +25° C TA = +70° C ID 9.5 7.5 A Continuous Drain Current (Note 5) VGS = 4.5V Steady State TA = +25° C TA = +70° C ID 6.0 5.7 A t<10s TA = +25° C TA = +70° C ID 8.0 6.3 A Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) IDM 66 A Maximum Continuous Body Diode Forward Current (Note 6) IS 3.0 A Avalanche Current (Note 7) IAS 9 A Avalanche Energy (Note 7) EAS 12 mJ Thermal Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 6) PD 1 W Thermal Resistance, Junction to Ambient (Note 6) Steady State RJA 131 ° C/W t<10s 72 ° C/W Total Power Dissipation (Note 5) PD 2.1 W Thermal Resistance, Junction to Ambient (Note 5) Steady State RJA 63 ° C/W t<10s 35 ° C/W Thermal Resistance, Junction to Case (Note 5) RJC 7.1 ° C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS 30 - - V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS - - 1 μA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS - - ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(TH) 1.0 1.45 2.4 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) - 15 33 mΩ VGS = 10V, ID = 10A VGS = 4.5V, ID = 7.5A Forward Transfer Admittance |Yfs| - 11 - S VDS = 5V, ID = 10A Diode Forward Voltage VSD - 0.72 1 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss - 478.9 - pF VDS = 15V, VGS = 0V, f = 1.0MHz Output Capacitance Coss - 96.7 - pF Reverse Transfer Capacitance Crss - 61.4 - pF Gate Resistance Rg 0.4 1.1 1.6 Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = 4.5V) Qg - 5.0 8 nC VDS = 15V,ID = 10A Total Gate Charge (VGS = 10V) Qg - 10.5 17 Gate-Source Charge Qgs - 1.8 - nC Gate-Drain Charge Qgd - 1.6 - nC Turn-On Delay Time tD(ON) - 2.9 - ns VGS = 10V, VDS = 15V, RG = 3Ω, RL = 1.5Ω Turn-On Rise Time tR - 7.9 - ns Turn-Off Delay Time tD(OFF) - 14.6 - ns Turn-Off Fall Time tF - 3.1 - ns Notes: 5. RJA is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. UIS in production with L = 0.3mH, TJ = +25° C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. NOT RECOMMENDED FOR NEW DESIGN USE DMN3025SFV
Document number: DS35620 Rev. 6 - 3 3 of 6 www.diodes.com December 2017 © Diodes Incorporated DMG7408SFG ADVANCE INFORMATION ADVANCE INFORMATION Fig. 1 Typical Output Characteristic V , DRAIN-SOURCE VOLTAGE (V)DS 30I , DRAIN CURRENT (A)D V = 2.5VGS V = 3.0VGS V = 3.5VGS V = 4.5VGS V = 4.0VGS V = 10VGS 0 10 2015 25 30 Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage I , DRAIN-SOURCE CURRENT (A)D 0.05R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) 0.04 0.01 0.02 0.03 V = 3.5VGS V = 4.5VGS V = 10VGS 0.5 0.7 0.9 1.1 1.3 1.5 1.7 Fig. 5 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (癈 )A R , DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) DSON V = 4.5V I = 5A GS D V = 10V I = 10A GS D 0.01 0.02 0.03 0.04 0.05 0.06 Fig. 6 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE ( 癈)A R , DRAIN-SOURCE ON-RESISTANCE ( )DSON V = 4.5V I = 5A GS D V = 10V I = 10A GS D 0 0.5 1 1.5 2 2.5 3 3.5 4 Fig. 2 Typical Transfer Characteristic V , GATE-SOURCE VOLTAGE (V) GS I , D R A I N C U R R E N T ( A ) D V = 85° C GS V = 125° C GS V = 25° C GS V = -55° C GS V = 150° C GS V = 5V DS ID, DRAIN CURRENT (A) 0 5 10 15 20 25 30 I , DRAIN CURRENT (A) D Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 0.01 0.02 0.04 R D R A I N - S O U R C E O N - R E S I S T A N C E ( D S ( O N ) 0.03 T = 85° C A T = 25° C A T = -55° C A T = 150° C A V = 10V GS T = 125° C A RDS(ON), DRAIN-SOURCE ON-RESISTANCE () NOT RECOMMENDED FOR NEW DESIGN USE DMN3025SFV (°C) (°C)
Document number: DS35620 Rev. 6 - 3 4 of 6 www.diodes.com December 2017 © Diodes Incorporated DMG7408SFG ADVANCE INFORMATION ADVANCE INFORMATION 0 5 10 15 20 25 30 Fig. 9 Typical Total Capacitance V , DRAIN-SOURCE VOLTAGE (V)DS 1,000C, CAPACITANCE (pF) 100 Ciss Crss Coss f = 1MHz 0 2 4 6 8 10 12 Fig. 10 Gate-Charge Characteristics Q , TOTAL GATE CHARGE (nC) g 10V , GATE-SOURCE VOLTAGE (V) GS V = 15V I = 10A DS D 0.001 0.01 0.1 1 10 100 Fig. 11 Transient Thermal Response t , PULSE DURATION TIME (s)1 0.00001 1,0000.0001 0.001 0.01 0.1 r(t), TRANSIENT THERMAL RESISTANCE T - T = P * R (t) Duty Cycle, D = t /t J A JA R (t) = r(t) * JA R R = 90 癈/W JA JA P(pk) D = 0.7 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 D = Single Pulse D = 0.9 D = 0.5 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Fig. 7 Gate Threshold Variation vs. Ambient Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (° C) A V G A T E T H R E S H O L D V O L T A G E ( V ) G S ( T H ) I = 1mA D I = 250µ A D VGS(TH), GATE THRESHOLD VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current V , SOURCE-DRAIN VOLTAGE (V) SD I , S O U R C E C U R R E N T ( A ) S T = 25° C A IS, SOURCE CURRENT (A) NOT RECOMMENDED FOR NEW DESIGN USE DMN3025SFV 90°C/W
Document number: DS35620 Rev. 6 - 3 5 of 6 www.diodes.com December 2017 © Diodes Incorporated DMG7408SFG ADVANCE INFORMATION ADVANCE INFORMATION Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 D E e b A Pin #1 ID Seating Plane L(4x) L1(3x) b2(4x) z(4x) PowerDI3333-8 Dim Min Max Typ A 0.75 0.85 0.80 A1 0.00 0.05 0.02 A3 0.203 b 0.27 0.37 0.32 b2 0.15 0.25 0.20 D 3.25 3.35 3.30 D2 2.22 2.32 2.27 E 3.25 3.35 3.30 E2 1.56 1.66 1.61 E3 0.79 0.89 0.84 E4 1.60 1.70 1.65 e 0.65 L 0.35 0.45 0.40 L1 0.39 z 0.515 All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 X Y C Dimensions Value (in mm) C 0.650 X 0.420 X1 0.420 X2 0.230 X3 2.370 Y 0.700 Y1 1.850 Y2 2.250 Y3 3.700 Y4 0.540 NOT RECOMMENDED FOR NEW DESIGN USE DMN3025SFV
Document number: DS35620 Rev. 6 - 3 6 of 6 www.diodes.com December 2017 © Diodes Incorporated DMG7408SFG ADVANCE INFORMATION ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, i mprovements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability a rising out of the application or use of this document or any product described herein; ne ither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to h old Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages , expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, internation al or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into mul tiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or system s without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety -critical, l ife support devices or systems, notwithstanding any devices - or systems -related information or support that may be pr ovided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2017, Diodes Incorporated www.diodes.com NOT RECOMMENDED FOR NEW DESIGN USE DMN3025SFV