DMG7401SFG
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 7
Technical content
Document number: DS35623 Rev. 12 - 3 1 of 7 www.diodes.com September 2017 © Diodes Incorporated NEW PRODUCT DMG7401SFG P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary BVDSS RDS(ON) max ID max TA = +25° C -30V 13mΩ @ VGS = -10V -9.8A 25mΩ @ VGS = -4.5V -7.0A
Description
This MOSFET is designed to minimize the on -state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
Backlighting Power Management Functions DC-DC Converters Features and Benefits Low RDS(ON) – Ensures on state losses are minimized Small form factor thermally efficient package enables higher density end products Occupies just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive -Compliant Part is Available Under Separate Datasheet (DMG7401SFGQ) Mechanical Data Case: PowerDI3333-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.0174 grams (Approximate) Ordering Information (Note 4) Part Number Case Packaging DMG7401SFG-7 PowerDI3333-8 2000/Tape & Reel DMG7401SFG-13 PowerDI3333-8 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Hal ogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information PowerDI3333-8 Bottom View ESD PROTECTED G75 = Product Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 17 for 2017) WW = Week Code (01 to 53) G75 YYWW Source Gate Protection Diode Gate Drain Equivalent Circuit S S S G D D D D Pin 1 Top View PowerDI is a registered trademark of Diodes Incorporated. NOT RECOMMENDED FOR NEW DESIGN USE DMP3018SFV
Document number: DS35623 Rev. 12 - 3 2 of 7 www.diodes.com September 2017 © Diodes Incorporated NEW PRODUCT DMG7401SFG Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±25 V Continuous Drain Current (Note 6) VGS = -10V Steady State TA = +25°C TA = +70°C ID -9.8 -7.7 A t<10s TA = +25°C TA = +70°C ID -13.5 -10.8 A Maximum Continuous Body Diode Forward Current (Note 5) IS -3.0 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM -80 A Avalanche Current (Notes 7 & 8) IAR -14 A Repetitive Avalanche Energy (Notes 7 & 8) L = 1mH EAR 104 mJ Thermal Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 5) TA = +25°C PD 0.94 W TA = +70°C 0.6 Thermal Resistance, Junction to Ambient (Note 5) Steady State RθJA 137 ° C/W t<10s 82 ° C/W Total Power Dissipation (Note 6) TA = +25°C PD 2.2 W TA = +70°C 1.3 Thermal Resistance, Junction to Ambient (Note 6) Steady State RθJA 60 ° C/W t<10s 36 ° C/W Thermal Resistance, Junction to Case (Note 6) RθJC 3.0 ° C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS -30 — — V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current IDSS — — -1 μA VDS = -30V, VGS = 0V Gate-Source Leakage IGSS — — ±10 μA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(TH) -1.7 — -3.0 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS(ON) — 9 11 mΩ VGS = -20V, ID = -12A — 10 13 VGS = -10V, ID = -9A — 17 25 VGS = -4.5V, ID = -5A Forward Transfer Admittance |Yfs| — 21 — S VDS = -5V, ID = -10A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss — 2246 2987 pF VDS = -15V, VGS = 0V, f = 1.0MHz Output Capacitance Coss — 352 468 pF Reverse Transfer Capacitance Crss — 294 391 pF Gate Resistance Rg — 5.1 10 Ω VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge (VGS = -4.5V) Qg — 20.5 30 nC VDS = -15V, ID = -12A Total Gate Charge (VGS = -10V) Qg — 41 58 nC Gate-Source Charge Qgs — 7.6 — nC Gate-Drain Charge Qgd — 8.0 — nC Turn-On Delay Time tD(ON) — 11.3 23 ns VDD = -15V, VGS = -10V, RL = 1.25Ω, RG = 3Ω Turn-On Rise Time tR — 15.4 31 ns Turn-Off Delay Time tD(OFF) — 38.0 61 ns Turn-Off Fall Time tF — 22.0 38 ns BODY DIODE CHARACTERISTICS Diode Forward Voltage VSD — -0.7 -1.0 V VGS = 0V, IS = -1A Reverse Recovery Time (Note 9) tRR — 20 31 ns IS = -9.5A, dI/dt = 100A/μs Reverse Recovery Charge (Note 9) QRR — 9.5 18 nC Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout . 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAR and EAR ratings are based on low frequency and duty cycles to keep T J = +25° C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing . NOT RECOMMENDED FOR NEW DESIGN USE DMP3018SFV
Document number: DS35623 Rev. 12 - 3 3 of 7 www.diodes.com September 2017 © Diodes Incorporated NEW PRODUCT DMG7401SFG -V , GATE-SOURCE VOLTAGE (V)GS Fig. 2 Typical Transfer Characteristics 30-I , DRAIN CURRENT (A)D T = 150 CA T = 125 CA T = 85 CA T = 25 CA T = -55 CA V = -5.0VDS 0 5 10 15 20 25 30 -I , DRAIN SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage D 0.01 0.02 0.03 R ,DRAIN-SOURCE ON-RESISTANCE( )DS(ON) 0 5 10 15 20 25 30 -I , DRAIN SOURCE CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature D 0.01 0.02 0.03 R , DRAIN-SOURCE ON-RESISTANCE( )DS(ON) T = -55 CA T = 25 CA T = 85 CA T = 125 CA T = 150 CA V = -4.5VGS -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)J Fig. 5 On-Resistance Variation with Temperature 0.5 0.7 0.9 1.1 1.3 1.5 1.7 R , DRAIN-SOURCE ON-RESISTANCE (Normalized) DS(ON) 0.004 0.008 0.012 0.016 0.020 0.024 0.028 0.032 0.036 0.040 -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)J Fig. 6 On-Resistance Variation with Temperature V = -10V I = A GS D -10 V = 5V I = A GS D -4. R , DRAIN-SOURCE ON-RESISTANCE ( )DS(on) 0 0.5 1.0 1.5 2.0 -V , DRAIN -SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics DS - I D R A I N C U R R E N T ( A ) D V = -3.0V GS V = -3.5V GS V = -4.0V GS V = -4.5V GS V = -10V GS V = -5.0V GS -ID, DRAIN CURRENT (A) (A) NOT RECOMMENDED FOR NEW DESIGN USE DMP3018SFV
Document number: DS35623 Rev. 12 - 3 4 of 7 www.diodes.com September 2017 © Diodes Incorporated NEW PRODUCT DMG7401SFG -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE ( 癈 ) Fig. 7 Gate Threshold Variation vs. Ambient Temperature A 0.5 1.0 1.5 2.0 2.5 3.0 V , GATE THRESHOLD VOLTAGE(V)GS(TH) -V , SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current SD 30-I , SOURCE CURRENT (A)S 100 1,000 10,000C , JUNCTION CAPACITANCE (pF)T 0 5 10 15 20 25 30 -V , DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Junction Capacitance DS Coss Crss f = 1MHz Ciss 0 5 10 15 20 25 30 35 40 45 Q , TOTAL GATE CHARGE (nC) Fig. 10 Gate-Charge Characteristics g 10-V , GATE-SOURCE VOLTAGE (V)GS 100 150 200 250 300 350 400 1E-05 1E-04 0.001 0.01 0.1 1 10 100 1,000 P , PEAK TRANSIENT POIWER (W)(PK) t1, PULSE DURATION TIME (sec) Fig. 11 Single Pulse Maximum Power Dissipation Single Pulse R = 135 C/W R = r * R T - T = P * R JA JA(t) (t) JA J A JA(t) 0.01 0.1 1 10 100 -V , DRAIN-SOURCE VOLTAGE (V) Fig. 12 SOA, Safe Operation Area DS 0.01 0.1 100 - I D R A I N C U R R E N T ( A ) D R Limited DS(ON) T = 150° C T = 25° C J(max) A V = -10V Single Pulse GS DUT on 1 * MRP Board DC P = 10s W P = 1s W P = 100ms W P = 10ms W P = 1ms W P = 100µ s W (°C) -ID, DRAIN CURRENT (A) -VGS(TH), GATE THRESHOLD VOLTAGE (V) NOT RECOMMENDED FOR NEW DESIGN USE DMP3018SFV
Document number: DS35623 Rev. 12 - 3 5 of 7 www.diodes.com September 2017 © Diodes Incorporated NEW PRODUCT DMG7401SFG 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIMES (sec) Fig. 13 Transient Thermal Resistance 0.001 0.01 0.1 r(t), TRANSIENT THERMAL RESISTANCE R (t) = r(t) * R R = 135 癈 /W Duty Cycle, D = t1/ t2 JA JA JA D = 0.7 D = 0.9 D = 0.5 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 Single Pulse RθJA(t) = r(t) * RθJA RθJA = 135℃/W Duty Cycle, D = t1 / t2 t1, PULSE DURATION TIME (sec) Fig. 13 Transient Thermal Resistance NOT RECOMMENDED FOR NEW DESIGN USE DMP3018SFV
Document number: DS35623 Rev. 12 - 3 6 of 7 www.diodes.com September 2017 © Diodes Incorporated NEW PRODUCT DMG7401SFG Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 X Y C PowerDI3333-8 Dim Min Max Typ A 0.75 0.85 0.80 A1 0.00 0.05 0.02 A3 0.203 b 0.27 0.37 0.32 b2 0.15 0.25 0.20 D 3.25 3.35 3.30 D2 2.22 2.32 2.27 E 3.25 3.35 3.30 E2 1.56 1.66 1.61 E3 0.79 0.89 0.84 E4 1.60 1.70 1.65 e 0.65 L 0.35 0.45 0.40 L1 0.39 z 0.515 All Dimensions in mm Dimensions Value (in mm) C 0.650 X 0.420 X1 0.420 X2 0.230 X3 2.370 Y 0.700 Y1 1.850 Y2 2.250 Y3 3.700 Y4 0.540 NOT RECOMMENDED FOR NEW DESIGN USE DMP3018SFV D E e b A Pin #1 ID Seating Plane L(4x) L1(3x) b2(4x) z(4x)
Document number: DS35623 Rev. 12 - 3 7 of 7 www.diodes.com September 2017 © Diodes Incorporated NEW PRODUCT DMG7401SFG IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license unde r its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products d escribed herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diod es Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product name s and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support device s or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety -critical, life support devices or systems, notwithstanding any devices - or systems -related information or support that may be provided by Diodes Incorporated. Further, Cus tomers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2017, Diodes Incorporated www.diodes.com NOT RECOMMENDED FOR NEW DESIGN USE DMP3018SFV