DMG6968U DIODES | Alldatasheet

Document overview

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  • PDF pages: 6

Technical content

Features

  • Low On-Resistance
  • 25m Ω @ VGS = 4.5V
  • 29m Ω @ VGS = 2.5V
  • 36m Ω @ VGS = 1.8V
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Lead Free By Design/RoHS Compliant (Note 1)
  • ESD Protected Up To 2kV
  • "Green" Device (Note 2)
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data
  • Case: SOT-23
  • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020D
  • Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208
  • Terminals Connections: See Diagram Below
  • Marking Information: See Page 4
  • Ordering Information: See Page 4
  • Weight: 0.008 grams (approximate) Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current (Note 3) Steady State TA = 25°C TA = 70°C ID 6.5 5.2 A Pulsed Drain Current IDM 30 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 3) PD 0.81 W Thermal Resistance, Junction to Ambient @TA = 25°C RθJA 157 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 1. No purposefully added lead. 3. Device mounted on FR-4 PCB with minimum recommended pad layout. TOP VIEW Internal Schematic TOP VIEW D G S ESD PROTECTED TO 2kV Source Gate Protection Diode Gate Drain

Document number: DS31738 Rev. 3 - 2 2 of 6 www.diodes.com July 2009 © Diodes Incorporated DMG6968U NEW PRODUCT Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage BVDSS 20 ⎯ ⎯ V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current TJ = 25°C I DSS ⎯ ⎯ 1.0 μA VDS = 20V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±10 μA VGS = ±10V, VDS = 0V Gate-Source Breakdown Voltage BVSGS ±12 - - V VDS = 0V, IG = ±250μA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage VGS(th) 0.5 ⎯ 0.9 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS (ON) ⎯ 21 25 mΩ VGS = 4.5V, ID = 6.5A 23 29 VGS = 2.5V, ID = 5.5A 28 36 VGS = 1.8V, ID = 3.5A Forward Transfer Admittance |Yfs| ⎯ 8 ⎯ S VDS = 10V, ID = 5A DYNAMIC CHARACTERISTICS Input Capacitance Ciss ⎯ 151 ⎯ pF VDS = 10V, VGS = 0V f = 1.0MHz Output Capacitance Coss ⎯ 91 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 32 ⎯ pF Total Gate Charge Qg ⎯ 8.5 ⎯ nC VGS = 4.5V, VDS = 10V, ID = 6.5A Gate-Source Charge Qgs ⎯ 1.6 ⎯ nC Gate-Drain Charge Qgd ⎯ 2.8 ⎯ nC Turn-On Delay Time tD(on) ⎯ 54 ⎯ ns VDD = 10V, VGS = 4.5V, RL = 10Ω, RG = 6Ω, ID = 1A Turn-On Rise Time tr ⎯ 66 ⎯ ns Turn-Off Delay Time tD(off) ⎯ 613 ⎯ ns Turn-Off Fall Time tf ⎯ 205 ⎯ ns Notes: 4. Short duration pulse test used to minimize self-heating effect. Fig. 1 Typical Output Characteristic V , DRAIN-SOURCE VOLTAGE (V)DS 20I, D RAIN CURRENT (A)D V = 1.5VGS V = 2.0VGS V = 3.0VGS V = 4.5VGS V = 10VGS V = 2.5VGS 0.5 1 1.5 2 Fig. 2 Typical Transfer Characteristic V , GATE-SOURCE VOLTAGE (V)GS I, D RAIN CURRENT (A)D T = -55°CA T = 2 5 ° CA T = 8 5 ° CAT = 125°CA T = 150°CA V = 5 VDS

Document number: DS31738 Rev. 3 - 2 3 of 6 www.diodes.com July 2009 © Diodes Incorporated DMG6968U NEW PRODUCT 0.01 0.02 0.03 0.04 0 5 10 15 20 25 30 Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage I , DRAIN-SOURCE CURRENT (A)D R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) Ω V = 4.5VGS V = 2.5VGS V = 1.8VGS 0.01 0.02 0.03 0.04 0.05 0.06 04 81 2 1 6 2 0 I , DRAIN CURRENT (A)D Fig. 4 Typical On-Resistance vs. Drain Current and T emperature R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) Ω T = -55°CA T = 25°CA T = 85°CA T = 125°CA T = 150°CA V = 4.5VGS Fig. 5 On-Resistance Variation with T emperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)A 0.6 0.8 1.0 1.2 1.4 1.6 R , DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) DSON V = 4.5V I = 6 . 5 A GS D V = 2 . 5 V I = 5 . 5 A GS D 0.01 0.02 0.03 0.04 0.05 0.06 Fig. 6 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C) A R , DRAIN-SOURCE ON-RESISTANCE ( ) DSON Ω V = 4.5V I = 6 . 5 A GS D V = 2.5V I = 5 . 5 A GS D 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Fig. 7 Gate Threshold Variation vs. Ambient Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)A V , GATE THRESHOLD VOLTAGE (V)GS(TH) I = 1 m AD I = 250µAD T = 2 5 ° CA Fig. 8 Diode Forward Voltage vs. Current V , SOURCE-DRAIN VOLTAGE (V)SD I, S OURCE CURRENT (A)S

Document number: DS31738 Rev. 3 - 2 4 of 6 www.diodes.com July 2009 © Diodes Incorporated DMG6968U NEW PRODUCT 100 150 200 250 300 350 400 450 500 048 1 2 1 6 2 0 Fig. 9 Typical Total Capacitance V , DRAIN-SOURCE VOLTAGE (V)DS C, CAPACITANCE (pF) Ciss Crss Coss Fig. 10 Typical Leakage Current vs. Drain-Source Voltage 100 1,000 10,000 100,000 0 2 4 6 8 1 01 21 41 61 8 2 0 V , DRAIN-SOURCE VOLTAGE (V) DS I , LEAKA GE CURRENT (nA) DSS T = - 5 5 ° CA T = 2 5 ° CA T = 8 5 ° CA T = 125°CA T = 150°CA Fig. 11 Transient Thermal Response t , PULSE DURATION TIME (s)1 0.001 0.01 0.1 r(t), TRANSIENT THERMAL RESISTANCE T - T = P * R ( t ) Duty Cycle, D = t /t JA J A θ R (t) = r(t) * θJA R R = 162°C/W θ θ JA JA P(pk) D = 0.7 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 D = Single Pulse D = 0.9 D = 0.5 Ordering Information (Note 5) Part Number Case Packaging DMG6968U-7 SOT-23 3000/Tape & Reel Marking Information Date Code Key Year 2009 2010 2011 2012 2013 2014 2015 Code W X Y Z A B C Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D 2N4 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September) 2N4 YM

Document number: DS31738 Rev. 3 - 2 5 of 6 www.diodes.com July 2009 © Diodes Incorporated DMG6968U NEW PRODUCT Package Outline Dimensions Suggested Pad Layout SOT-23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 - - 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 α 0° 8° - All Dimensions in mm Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 A M J L D F B C H K G X E Y CZ

Document number: DS31738 Rev. 3 - 2 6 of 6 www.diodes.com July 2009 © Diodes Incorporated DMG6968U NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. Diodes Incorporated does not assume any liability ari sing out of the application or use of this document or an y product described herein; neither does Di odes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or us er of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. Should Customers purchase or use Diodes Inco rporated products for any unintended or una uthorized application, Customers shall i ndemnify and hold Diodes Incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support dev ice or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporate d and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2009, Diodes Incorporated www.diodes.com