DMG6602SVT

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Manufacturer or author: Diodes Incorporated
PDF pages: 10

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COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device V(BR)DSS RDS(on) ID TA = +25°C Q1 30V 60mΩ @ VGS = 10V 3.4A 100mΩ @ VGS = 4.5V 2.7A Q2 -30V 95mΩ @ VGS = -10V -2.8A 140mΩ @ VGS = -4.5V -2.3A Description and Applications This new generation MOSFET is designed to minimize the on- state resistance (R DS(on)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Backlighting
DC-DC Converters
Power Management Functions Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability Mechanical Data
Case: TSOT26
Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Finish—Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.013 grams (Approximate) Ordering Information (Note 3) Part Number Case Packaging DMG6602SVT-7 TSOT26 3000 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant . 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Marking Information Date Code Key Year 2010 2011 2012 2013 2014 2015 2016 2017 Code X Y Z A B C D E Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D TSOT26 Top View Top View Q1 N-Channel Q2 P-Channel 66C = Product Type Marking Code YM = Date Code Marking Y = Year (ex: X = 2010) M = Month (ex: 9 = September) 66C YM NOT RECOMMENDED FOR NEW DESIGN USE DMC3071LVT DMG6602SVT Document number: DS35159 Rev. 8 - 3 1 of 10 www.diodes.com December 2018 © Diodes Incorporated

Maximum Ratings – Q1 (@TA = +25°C unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +70°C ID 3.4 2.7 A Continuous Drain Current (Note 6) VGS = 4.5V Steady State TA = +25°C TA = +70°C ID 2.7 2.2 A Maximum Continuous Body Diode Forward Current (Note 6) IS 1.5 A Pulsed Drain Current (Note 6) IDM 25 A Maximum Ratings – Q2 (@TA = +25°C unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 6) VGS = -10V Steady State TA = +25°C TA = +70°C ID -2.8 -2.4 A Continuous Drain Current (Note 6) VGS = -4.5V Steady State TA = +25°C TA = +70°C ID -2.3 -2.1 A Maximum Continuous Body Diode Forward Current (Note 6) IS -1.5 A Pulsed Drain Current (Note 6) ID -20 A Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) TA = +25°C PD 0.84 W TA = +70°C 0.52 Thermal Resistance, Junction to Ambient (Note 5) Steady State RϴJA 155 °C/W t < 10s 109 Total Power Dissipation (Note 6) TA = +25°C PD 1.27 W TA = +70°C 0.8 Thermal Resistance, Junction to Ambient (Note 6) Steady State RϴJA 102 °C/W t < 10s 71 Thermal Resistance, Junction to Case (Note 6) RϴJC 34 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 5. Device mounted on FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PCB, 2oz copper, with 1inch square copper plate. DMG6602SVT Document number: DS35159 Rev. 8 - 3 2 of 10 www.diodes.com December 2018 © Diodes Incorporated

Electrical Characteristics – Q1 NMOS (@TA = +25°C unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 30 — — V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS — — 1.0 µA VDS = 24V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) 1.0 — 2.3 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS (ON) — 38 100 mΩ VGS = 10V, ID = 3.1A VGS = 4.5V, ID = 2A Forward Transfer Admittance |Yfs| — 4 — S VDS = 5V, ID = 3.1A Diode Forward Voltage VSD — 0.8 1 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss — 290 400 pF VDS = 15V, VGS = 0V, f = 1.2MHz Output Capacitance Coss — 40 80 Reverse Transfer Capacitance Crss — 40 80 Gate Resistance Rg — 1.4 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = 4.5V) Qg — 4 6 nC VDS = 15V, VGS = 4.5V, ID = 3.1A Total Gate Charge (VGS = 10V) Qg — 9 13 VDS = 15V, VGS = 10V, ID = 3A Gate-Source Charge Qgs — 1.2 — Gate-Drain Charge Qgd — 1.5 — Turn-On Delay Time tD(on) — 3 — ns VGS = 10V, VDS = 15V, RG = 3Ω, RL = 4.7Ω Turn-On Rise Time tr — 5 — Turn-Off Delay Time tD(off) — 13 — Turn-Off Fall Time tf — 3 — Notes: 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. V , DRAIN -SOURCE VOLTAGE(V) Fig. 1 Typical Output Characteristics DS I , DRAIN CURRENT (A)D 0.0 2.0 4.0 6.0 8.0 10.0 V , GATE SOURCE VOLTAGE(V) Fig. 2 Typical Transfer Characteristics GS I , DRAIN CURRENT (A)D 0 1 2 3 4 5 V = 5.0VDS DMG6602SVT Document number: DS35159 Rev. 8 - 3 3 of 10 www.diodes.com December 2018 © Diodes Incorporated

I , DRAIN SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage D R ,DRAIN-SOURCE ON-RESISTANCE( )DS(ON) Ω 0.01 0.1 0 4 8 12 16 20 R ( ) Ave @ V =4.5VDS(ON) GΩ R ( ) Ave @ V =10VDS(ON) GΩ I , DRAIN SOURCE CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and T emperature D R , DRAIN-SOURCE ON-RESISTANCE( )DS(ON) Ω 0.04 0.08 0.12 0.16 0 2 4 6 8 10 V = 4.5VGS Ave R ( ) @ 150°CDS(ON) Ω Ave R ( ) @ -55°CDS(ON) Ω Ave R ( ) @ 25°CDS(ON) Ω Ave R ( ) @ 85°CDS(ON) Ω Ave R ( ) @ 125°CDS(ON) Ω -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)J ° Fig. 5 On-Resistance Variation with Temperature R , DRAIN-SOURCE ON-RESISTANCE (Normalized) DS(ON) 0.6 0.8 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)J ° Fig. 6 On-Resistance Variation with Temperature R , DRAIN-SOURCE ON-RESISTANCEDS(ON) 0.02 0.04 0.06 0.08 0.1 0.4 0.8 1.6 1.2 2.4 -50 -25 0 25 50 75 100 125 150 V , GATE THRESHOLD VOLTAGE (V)GS(th) T , JUNCTION TEMPERATURE ( C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature J ° I = 250 AD µ I = 1mAD 2.0 I , SOURCE CURRENT (A)S V , SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current SD V (V) @ V =0V T = 25 CSD DS A ° DMG6602SVT Document number: DS35159 Rev. 8 - 3 4 of 10 www.diodes.com December 2018 © Diodes Incorporated

f = 1MHz V , DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Junction Capacitance DS C , JUNCTION CAPACITANCE (pF)T C Ave (pF) RSS 100 1000 0 5 10 15 20 25 30 C Ave (pF) ISS C Ave (pF) OSS 0 2 4 6 8 10 V = 10V I = 3.0A DS D Q (nC)g, TOTAL GATE CHARGE Fig. 10 Gate Charge V GATE THRESHOLD VOLTAGE (V)GS 0.1 1 10 100 V , DRAIN-SOURCE VOLTAGE (V) Fig. 11 SOA, Safe Operation Area DS 0.01 0.1 100I , DRAIN CURRENT (A)D R Limited DS(on) T = 150°C T = 25°C J(max) A V = 10V Single Pulse GS DUT on 1 * MRP Board DC P = 10sW P = 1sW P = 100msW P = 10msW P = 1msW P = 100µsW DMG6602SVT Document number: DS35159 Rev. 8 - 3 5 of 10 www.diodes.com December 2018 © Diodes Incorporated

Electrical Characteristics – Q2 PMOS (@TA = +25°C unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS -30 — — V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS — — -1.0 µA VDS = -24V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) -1.0 — -2.3 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS (ON) — 73 140 mΩ VGS = -10V, ID = -2.7A VGS = -4.5V, ID = -2A Forward Transfer Admittance |Yfs| — 6 — S VDS = -5V, ID = -2.7A Diode Forward Voltage VSD — -0.8 -1.0 V VGS = 0V, IS = -1A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss — 350 420 pF VDS = -15V, VGS = 0V, f = 1.2MHz Output Capacitance Coss — 50 100 Reverse Transfer Capacitance Crss — 45 80 Gate Resistance Rg — 17.1 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = -4.5V) Qg — 4 6 nC VDS = -15V, VGS = -4.5V, ID = -3A Total Gate Charge (VGS = -10V) Qg — 7 9 VDS = -15V, VGS = -10V, ID = -3A Gate-Source Charge Qgs — 0.9 — Gate-Drain Charge Qgd — 1.2 — Turn-On Delay Time tD(on) — 4.8 — ns VGS = -10V, VDS = -15V, RG = 6Ω, RL = 15Ω Turn-On Rise Time tr — 7.3 — Turn-Off Delay Time tD(off) — 20 — Turn-Off Fall Time tf — 13 — Notes: 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. V , DRAIN -SOURCE VOLTAGE(V) Fig. 12 Typical Output Characteristics DS 0.0 2.0 4.0 6.0 8.0 I , DRAIN CURRENTD V , GATE SOURCE VOLTAGE(V) Fig. 13 Typical Transfer Characteristics GS I , DRAIN CURRENT (A)D DMG6602SVT Document number: DS35159 Rev. 8 - 3 6 of 10 www.diodes.com December 2018 © Diodes Incorporated

I , DRAIN SOURCE CURRENT Fig. 14 Typical On-Resistance vs. Drain Current and Gate Voltage D R ,DRAIN-SOURCE ON-RESISTANCE( )DS(ON) Ω 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0 2 R ( ) Ave @ V =2.5VDS(ON) GΩ R ( ) Ave @ V =4.5VDS(ON) GΩ R ( ) Ave @ V =10VDS(ON) GΩ 4 86 0 2 4 6 8 I , DRAIN SOURCE CURRENT (A) Fig. 15 Typical On-Resistance vs. Drain Current and T emperature D R , DRAIN-SOURCE ON-RESISTANCE( )DS(ON) Ω V = 4.5VGS 0.04 0.08 0.12 0.16 0.2 Ave R ( ) @ 150°CDS(ON) Ω Ave R ( ) @ -55°CDS(ON) Ω Ave R ( ) @ 25°CDS(ON) Ω Ave R ( ) @ 85°CDS(ON) Ω Ave R ( ) @ 125°CDS(ON) Ω -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)J ° Fig. 16 On-Resistance Variation with T emperature R , DRAIN-SOURCE ON-RESISTANCE (Normalized) DS(ON) 0.6 0.8 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)J ° Fig. 17 On-Resistance Variation with Temperature R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) Ω 0.04 0.08 0.12 0.16 0.2 -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)J ° Fig. 18 Gate Threshold Variation vs. Ambient Temperature 0.4 0.8 1.2 1.6 V , GATE THRESHOLD VOLTAGE (V)GS(TH) V , SOURCE -DRAIN VOLTAGE (V)SD Fig. 19 Diode Forward Voltage vs. Current I , SOURCE CURRENT (V)S DMG6602SVT Document number: DS35159 Rev. 8 - 3 7 of 10 www.diodes.com December 2018 © Diodes Incorporated

-V , DRAIN-SOURCE VOLTAGE (V) Fig. 20 Typical Junction Capacitance DS C , JUNCTION CAPACITANCE (pF)T 100 1000 0 5 10 15 20 25 30 f = 1MHz C Ave(pF)ISS C Ave(pF)OSS C Ave(pF)RSS 0 2 4 6 8 10 V = -15 I = -3A DS D Q (nC)g, TOTAL GATE CHARGE Fig. 21 Gate Charge -V GATE THRESHOLD VOLTAGE (V)GS 0.1 1 10 100 -V , DRAIN-SOURCE VOLTAGE (V) Fig. 22 SOA, Safe Operation Area DS 0.01 0.1 100-I , DRAIN CURRENT (A)D R Limited DS(on) T = 150°C T = 25°C J(max) A V = -10V Single Pulse GS DUT on 1 * MRP Board DC P = 10sW P = 1sW P = 100msW P = 10msW P = 1msW P = 100µsW 0.001 0.01 0.1 t1, PULSE DURATION TIME (sec) Fig. 23 Transient Thermal Resistance r(t), TRANSIENT THERMAL RESISTANCE D = 0.9 D = 0.7 D = 0.5 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 Single Pulse R (t) = r(t) * R R = 164C/W Duty Cycle, D = t1/ t2 θJA θθJA JA DMG6602SVT Document number: DS35159 Rev. 8 - 3 8 of 10 www.diodes.com December 2018 © Diodes Incorporated

Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. TSOT26 D E1/2 E E/2 e A Seating Plane0 L Gauge Plane 01( 4x) 01( 4x) c b Seating Plane TSOT26 Dim Min Max Typ A − 1.00 − A1 0.010 0.100 − A2 0.840 0.900 − D 2.800 3.000 2.900 E 2.800 BSC E1 1.500 1.700 1.600 b 0.300 0.450 − c 0.120 0.200 − e 0.950 BSC e1 1.900 BSC L 0.30 0.50 − L2 0.250 BSC θ 0° 8° 4° θ1 4° 12° − All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. TSOT26 C X Y Dimensions Value (in mm) C 0.950 X 0.700 Y 1.000 Y1 3.199 DMG6602SVT Document number: DS35159 Rev. 8 - 3 9 of 10 www.diodes.com December 2018 © Diodes Incorporated

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Product Information

DMG6602SVT specifications and overview.

Summary

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Rev 6

Description

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Rev 6

Source title DMG6602SVT Datasheet(PDF) - Diodes Incorporated

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