DMG6602SVT-7 | DigiCamel IC Datasheet

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Document number: DS35106 Rev. 6 - 2 1 of 10 www.diodes.com May 2012 © Diodes Incorporated DMG6602SVT ADVANCE INFORMATION COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device V(BR)DSS RDS(on) ID TA = 25°C Q1 30V 60mΩ @ VGS = 10V 3.4A 100mΩ @ VGS = 4.5V 2.7A Q2 -30V 95mΩ @ VGS = -10V -2.8A 140mΩ @ VGS = -4.5V -2.3A Description and Applications This new generation MOSFET has been designed to minimize the on- state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Backlighting
DC-DC Converters
Power management functions Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free Finish; RoHS compliant (Note 1)
Halogen and Antimony Free. “Green” Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability Mechanical Data
Case: TSOT26
Case Material: Molded Plastic, “G reen” Molding Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Finish – Matte Ti n annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.013 grams (approximate) Ordering Information (Note 3) Part Number Case Packaging DMG6602SVT-7 TSOT26 3000 / Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information Date Code Key Year 2010 2011 2012 2013 2014 2015 2016 2017 Code X Y Z A B C D E Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D TSOT26 Top View Top View N-Channel P-Channel 66C = Product Type Marking Code YM = Date Code Marking Y = Year (ex: X = 2010) M = Month (ex: 9 = September) 66C YM

Document number: DS35106 Rev. 6 - 2 2 of 10 www.diodes.com May 2012 © Diodes Incorporated DMG6602SVT ADVANCE INFORMATION Maximum Ratings – Q1 @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 5) VGS = 10V Steady State TA = 25°C TA = 70°C ID 3.4 2.7 A Continuous Drain Current (Note 5) VGS = 4.5V Steady State TA = 25°C TA = 70°C ID 2.7 2.2 A Maximum Continuous Body Diode Forward Current (Note 5) IS 1.5 A Pulsed Drain Current (Note 5) IDM 25 A Maximum Ratings – Q2 @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 5) VGS = -10V Steady State TA = 25°C TA = 70°C ID -2.8 -2.4 A Continuous Drain Current (Note 5) VGS = -4.5V Steady State TA = 25°C TA = 70°C ID -2.3 -2.1 A Maximum Continuous Body Diode Forward Current (Note 5) IS -1.5 A Pulsed Drain Current (Note 5) ID -20 A Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 4) TA = 25°C PD 0.84 W TA = 70°C 0.52 Thermal Resistance, Junction to Ambient (Note 4) Steady state RθJA 155 °C/W t<10s 109 Total Power Dissipation (Note 5) TA = 25°C PD 1.27 W TA = 70°C 0.8 Thermal Resistance, Junction to Ambient (Note 5) Steady state RθJA 102 °C/W t<10s 71 Thermal Resistance, Junction to Case (Note 5) RθJC 34 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

Document number: DS35106 Rev. 6 - 2 3 of 10 www.diodes.com May 2012 © Diodes Incorporated DMG6602SVT ADVANCE INFORMATION Electrical Characteristics – Q1 NMOS@ TA = 25°C unless otherwise stated Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BVDSS 30 - - V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS - - 1.0 µA VDS = 24V, VGS = 0V Gate-Source Leakage IGSS - - ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(th) 1.0 - 2.3 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS (ON) - 38 100 mΩ VGS = 10V, ID = 3.1A VGS = 4.5V, ID = 2A Forward Transfer Admittance |Yfs| - 4 - S VDS = 5V, ID = 3.1A Diode Forward Voltage VSD - 0.8 1 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Ciss - 290 400 pF VDS = 15V, VGS = 0V, f = 1.2MHz Output Capacitance Coss - 40 80 Reverse Transfer Capacitance Crss - 40 80 Gate Resistance Rg - 1.4 - Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = 4.5V) Qg - 4 6 nC VDS = 15V, VGS = 4.5V, ID = 3.1A Total Gate Charge (VGS = 10V) Qg - 9 13 VDS = 15V, VGS = 10V, ID = 3A Gate-Source Charge Qgs - 1.2 - Gate-Drain Charge Qgd - 1.5 - Turn-On Delay Time tD(on) - 3 - ns VGS = 10V, VDS = 15V, RG = 3Ω, RL = 4.7Ω Turn-On Rise Time tr - 5 - Turn-Off Delay Time tD(off) - 13 - Turn-Off Fall Time tf - 3 - Notes: 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. V , DRAIN -SOURCE VOLTAGE(V) Fig. 1 Typical Output Characteristics DS I, D RAIN CURRENT (A)D 0.0 2.0 4.0 6.0 8.0 10.0 V , GATE SOURCE VOLTAGE(V) Fig. 2 Typical Transfer Characteristics GS I, D RAIN CURRENT (A)D 012345 V = 5.0VDS

Document number: DS35106 Rev. 6 - 2 4 of 10 www.diodes.com May 2012 © Diodes Incorporated DMG6602SVT ADVANCE INFORMATION I , DRAIN SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage D R ,DRAIN-SOURCE ON-RESISTANCE( )DS(ON) Ω 0.01 0.1 04 8 1 21 6 2 0 R ( ) Ave @ V =4.5VDS(ON) GΩ R ( ) Ave @ V =10VDS(ON) GΩ I , DRAIN SOURCE CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and T emperature D R , DRAIN-SOURCE ON-RESISTANCE( )DS(ON) Ω 0.04 0.08 0.12 0.16 02 4 6 81 0 V= 4 . 5 VGS Ave R ( ) @ 150°CDS(ON) Ω Ave R( ) @ - 5 5 ° CDS(ON) Ω Ave R ( ) @ 25°CDS(ON) Ω Ave R ( ) @ 85°CDS(ON) Ω Ave R ( ) @ 125°CDS(ON) Ω -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)J ° Fig. 5 On-Resistance Variation with Temperature R , DRAIN-SOURCE ON-RESISTANCE (Normalized) DS(ON) 0.6 0.8 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)J ° Fig. 6 On-Resistance Variation with Temperature R , DRAIN-SOURCE ON-RESISTANCEDS(ON) 0.02 0.04 0.06 0.08 0.1 0.4 0.8 1.6 1.2 2.4 -50 -25 0 25 50 75 100 125 150 V, GATE THRESHOLD VOLTAGE (V)GS(th) T , JUNCTION TEMPERATURE ( C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature J ° I= 2 5 0AD μ I= 1 m AD 2.0 I , SOURCE CURRENT (A)S V , SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current SD V( V ) @ V= 0 V T = 2 5 CSD DS A °

Document number: DS35106 Rev. 6 - 2 5 of 10 www.diodes.com May 2012 © Diodes Incorporated DMG6602SVT ADVANCE INFORMATION f = 1MHz V , DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Junction Capacitance DS C , JUNCTION CAPACITANCE (pF)T CA v e ( p F ) RSS 100 1000 0 5 10 15 20 25 30 CA v e ( p F ) ISS CA v e ( p F ) OSS 02 46 8 1 0 V = 10V I= 3 . 0 A DS D Q( nC)g, TOTAL GATE CHARGE Fig. 10 Gate Charge V GATE THRESHOLD VOLTAGE (V)GS 0.1 1 10 100 V , DRAIN-SOURCE VOLTAGE (V) Fig. 11 SOA, Safe Operation Area DS 0.01 0.1 100I, D RAIN CURRENT (A)D R Limited DS(on) T = 150°C T = 2 5 ° C J(max) A V = 10V Single Pulse GS DUT on 1 * MRP Board DC P = 10sW P = 1 sW P = 100msW P= 1 0 m sW P = 1 m sW P = 100µsW

Document number: DS35106 Rev. 6 - 2 6 of 10 www.diodes.com May 2012 © Diodes Incorporated DMG6602SVT ADVANCE INFORMATION Electrical Characteristics – Q2 PMOS@ TA = 25°C unless otherwise stated Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BVDSS -30 - - V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current IDSS - - -1.0 µA VDS = -24V, VGS = 0V Gate-Source Leakage IGSS - - ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(th) -1.0 - -2.3 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS (ON) - 73 140 mΩ VGS = -10V, ID = -2.7A VGS = -4.5V, ID = -2A Forward Transfer Admittance |Yfs| - 6 - S VDS = -5V, ID = -2.7A Diode Forward Voltage VSD - -0.8 -1.0 V VGS = 0V, IS = -1A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Ciss - 350 420 pF VDS = -15V, VGS = 0V, f = 1.2MHz Output Capacitance Coss - 50 100 Reverse Transfer Capacitance Crss - 45 80 Gate Resistance Rg - 17.1 - Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = -4.5V) Qg - 4 6 nC VDS = -15V, VGS = -4.5V, ID = -3A Total Gate Charge (VGS = -10V) Qg - 7 9 VDS = -15V, VGS = -10V, ID = -3A Gate-Source Charge Qgs - 0.9 - Gate-Drain Charge Qgd - 1.2 - Turn-On Delay Time tD(on) - 4.8 - ns VGS = -10V, VDS = -15V, RG = 6Ω, RL = 15Ω Turn-On Rise Time tr - 7.3 - Turn-Off Delay Time tD(off) - 20 - Turn-Off Fall Time tf - 13 - Notes: 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing. V , DRAIN -SOURCE VOLTAGE(V) Fig. 12 Typical Output Characteristics DS 0.0 2.0 4.0 6.0 8.0 I , DRAIN CURRENTD V , GATE SOURCE VOLTAGE(V) Fig. 13 Typical Transfer Characteristics GS I, D RAIN CURRENT (A)D

Document number: DS35106 Rev. 6 - 2 7 of 10 www.diodes.com May 2012 © Diodes Incorporated DMG6602SVT ADVANCE INFORMATION I , DRAIN SOURCE CURRENT Fig. 14 Typical On-Resistance vs. Drain Current and Gate Voltage D R ,DRAIN-SOURCE ON-RESISTANCE( )DS(ON) Ω 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 R ( ) Ave @ V =2.5VDS(ON) GΩ R( ) A v e @ V = 4 . 5 VDS(ON) GΩ R( ) A v e @ V = 1 0 VDS(ON) GΩ 48 6 02 46 8 I , DRAIN SOURCE CURRENT (A) Fig. 15 Typical On-Resistance vs. Drain Current and T emperature D R , DRAIN-S OURCE ON-RESISTANCE( )DS(ON) Ω V = 4.5VGS 0.04 0.08 0.12 0.16 0.2 Ave R ( ) @ 150°CDS(ON) Ω Ave R( ) @ - 5 5 ° CDS(ON) Ω Ave R ( ) @ 25°CDS(ON) Ω Ave R ( ) @ 85°CDS(ON) Ω Ave R ( ) @ 125°CDS(ON) Ω -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)J ° Fig. 16 On-Resistance Variation with Temperature R , DRAIN-SOURCE ON-RESISTANCE (Normalized) DS(ON) 0.6 0.8 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)J ° Fig. 17 On-Resistance Variation with Temperature R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) Ω 0.04 0.08 0.12 0.16 0.2 -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)J ° Fig. 18 Gate Threshold Variation vs. Ambient Temperature 0.4 0.8 1.2 1.6 V , GATE THRESHOLD VOLTAGE (V)GS(TH) V , SOURCE -DRAIN VOLTAGE (V)SD Fig. 19 Diode Forward Voltage vs. Current I , SOURCE CURRENT (V)S

Document number: DS35106 Rev. 6 - 2 8 of 10 www.diodes.com May 2012 © Diodes Incorporated DMG6602SVT ADVANCE INFORMATION -V , DRAIN-SOURCE VOLTAGE (V) Fig. 20 Typical Junction Capacitance DS C , JUNCTION CAPACITANCE (pF)T 100 1000 0 5 10 15 20 25 30 f = 1MHz C A v e ( p F )ISS C A v e ( p F )OSS C Ave(pF)RSS 024 6 8 1 0 V= - 1 5 I= - 3 A DS D Q( nC)g, TOTAL GATE CHARGE Fig. 21 Gate Charge -V GATE THRESHOLD VOLTAGE (V)GS 0.1 1 10 100 -V , DRAIN-SOURCE VOLTAGE (V) Fig. 22 SOA, Safe Operation Area DS 0.01 0.1 100-I , D RAIN CURRENT (A)D R Limited DS(on) T = 150°C T = 2 5 ° C J(max) A V = -10V Single Pulse GS DUT on 1 * MRP Board DC P = 10sW P = 1 sW P = 100msW P = 10msW P = 1 m sW P = 100µsW 0.001 0.01 0.1 t1, PULSE DURATION TIME (sec) Fig. 23 Transient Thermal Resistance r(t), TRANSIENT THERMAL RESISTANCE D = 0.9 D = 0.7 D = 0.5 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 Single Pulse R (t) = r(t) * R R = 164C/W Duty Cycle, D = t1/ t2 θJA θθJA JA

Document number: DS35106 Rev. 6 - 2 9 of 10 www.diodes.com May 2012 © Diodes Incorporated DMG6602SVT ADVANCE INFORMATION Package Outline Dimensions Suggested Pad Layout TSOT26 Dim Min Max Typ A − 1.00 − A1 0.01 0.10 − A2 0.84 0.90 − D − − 2.90 E − − 2.80 E1 − − 1.60 b 0.30 0.45 − c 0.12 0.20 − e − − 0.95 e1 − − 1.90 L 0.30 0.50 L2 − − 0.25 θ 0° 8° 4° θ1 4° 12° − All Dimensions in mm Dimensions Value (in mm) C 0.950 X 0.700 Y 1.000 Y1 3.199 C C X (6x) Y (6x) c L E1 E D e 6x b θ 4x 1 θ A

Document number: DS35106 Rev. 6 - 2 10 of 10 www.diodes.com May 2012 © Diodes Incorporated DMG6602SVT ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described he rein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. Should Customers purchase or use Diodes Inco rporated products for any unintended or una uthorized application, Customers shall i ndemnify and hold Diodes Incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporate d and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2012, Diodes Incorporated www.diodes.com

Product Information

DMG6602SVT-7 specifications and overview.

Summary

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Rev 6

Description

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Rev 6

Source title DMG6602SVT-7 Datasheet(PDF) - Diodes Incorporated

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