DMG6601LVT DIODES | Alldatasheet
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Complementary MOSFET Low On-Resistance Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Case: TSOT26 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Terminals: Finish NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (approximate) Ordering Information (Note 4) Part Number Case Packaging DMG6601LVT-7 TSOT26 3K/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directiv e 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more in formation about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html Marking Information Date Code Key Year 2011 2012 2013 2014 2015 2016 2017 Code Y Z A B C D E Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D 66G = Product Type Marking Code YM = Date Code Marking Y = Year (ex: X = 2010) M = Month (ex: 9 = September) N-Channel P-Channel Device Schematic 66G YM TSOT26 Top View Top View
Document number: DS35405 Rev. 4 - 2 2 of 9 www.diodes.com August 2013 © Diodes Incorporated DMG6601LVT ADVANCE INFORMTION Maximum Ratings - Q1 and Q2 (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Q1 Q2 Units Drain-Source Voltage VDSS 30 -30 V Gate-Source Voltage VGSS ±12 ±12 V Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +70°C ID 3.8 3.0 -2.5 -2 A t<10s TA = +25°C TA = +70°C ID 4.5 3.4 -2.3 A Maximum Body Diode Forward Current (Note 6) IS 1.5 -1.5 A Pulsed Drain Current (Note 6) IDM 20 -15 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 5) TA = +25°C PD 0.85 W TA = +70°C 0.54 Thermal Resistance, Junction to Ambient (Note 5) Steady state RJA 147 °C/W t<10s 103 Total Power Dissipation (Note 6) TA = +25°C PD 1.3 W TA = +70°C 0.83 Thermal Resistance, Junction to Ambient (Note 6) Steady state RJA 96 °C/W t<10s 67 Thermal Resistance, Junction to Case (Note 6) RJC 36 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics - Q1 (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 30 - - V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current @TJ = +25°C I DSS - - 1 μA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS - - ±100 nA VGS = ±12V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) 0.5 1 1.5 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS (ON) - 34 55 mΩ VGS = 10V, ID = 3.4A - 38 65 VGS = 4.5V, ID = 3A 49 85 VGS = 2.5V, ID = 2A Forward Transfer Admittance |Yfs| - 6 - S VDS = 5V, ID = 3.4A Diode Forward Voltage (Note 7) VSD - 0.75 1.0 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss - 422 - pF VDS = 15V, VGS = 0V, f = 1.0MHz Output Capacitance Coss - 41 - pF Reverse Transfer Capacitance Crss - 39 - pF Gate resistance Rg 1.26 - Ω VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge (VGS = 4.5V) Q g - 5.4 - nC VGS = 10V, VDS = 15V, ID = 3.1A Total Gate Charge (VGS = 10V) Q g 12.3 - nC Gate-Source Charge Qgs - 0.8 - nC Gate-Drain Charge Qgd - 1.2 - nC Turn-On Delay Time tD(on) - 1.6 - ns VDS = 15V, VGS = 10V, RL = 4.7Ω, RG =3Ω, Turn-On Rise Time tr - 7.4 - ns Turn-Off Delay Time tD(off) - 31.2 - ns Turn-Off Fall Time tf - 15.6 - ns Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout 6. Device mounted on FR-4 substrate PC board, 2oz copper, wi th thermal vias to bottom layer 1inch square copper plate 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing.
Document number: DS35405 Rev. 4 - 2 3 of 9 www.diodes.com August 2013 © Diodes Incorporated DMG6601LVT ADVANCE INFORMTION Electrical Characteristics - Q2 (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS -30 - - V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current @TJ = +25°C I DSS - - -1 μA VDS = -30V, VGS = 0V Gate-Source Leakage IGSS - - ±100 nA VGS = ±12V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) -0.4 -0.8 -1.2 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS (ON) - 70 110 mΩ VGS = -10V, ID = -2.3A - 81 142 VGS = -4.5V, ID = -2A 105 190 VGS = -2.5V, ID = -1A Forward Transfer Admittance |Yfs| - 5.3 - S VDS = -5V, ID = -2.3A Diode Forward Voltage (Note 7) VSD - -0.8 -1.0 V VGS = 0V, IS = -1A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss - 541 - pF VDS = -15V, VGS = 0V, f = 1.0MHz Output Capacitance Coss - 46 - pF Reverse Transfer Capacitance Crss - 43 - pF Gate resistance Rg - 16.9 - Ω VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge (VGS = -4.5V) Q g - 6.5 - nC VGS = -10V, VDS = -15V, ID = -2.3A Total Gate Charge (VGS = -10V) Q g 13.8 - nC Gate-Source Charge Qgs - 1.0 - nC Gate-Drain Charge Qgd - 1.6 - nC Turn-On Delay Time tD(on) - 1.7 - ns VDS = -15V, VGS = -10V, RL = 6Ω, RG = 3Ω, Turn-On Rise Time tr - 4.6 - ns Turn-Off Delay Time tD(off) - 18.3 - ns Turn-Off Fall Time tf - 2.2 - ns Notes: 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. N Channel - Q1 0 0.5 1.0 1.5 2.0 V , DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic DS I, D RAIN CURRENT (A)D V= 2 . 5 VGS V= 3 . 0 VGS V= 3 . 5 VGS V= 4 . 0 VGS V= 4 . 5 VGS V= 5 . 0 VGS V= 1 0 VGS V= 2 . 0 VGS 01 2 34 V , GATE-SOURCE VOLTAGE (V)GS Fig. 2 Typical Transfer Characteristics I, D RAIN CURRENT (A)D T = 150°CA T = 125°CA T = 8 5 ° CA T = 2 5 ° CA T = -55°CA V = 5.0VDS
Document number: DS35405 Rev. 4 - 2 4 of 9 www.diodes.com August 2013 © Diodes Incorporated DMG6601LVT ADVANCE INFORMTION 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0 5 10 15 20 I , DRAIN-SOURCE CURRENT (A)D Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) V = 2.5VGS V = 10VGS V = 4.5VGS 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 2345 6789 1 0 V , GATE-SOURCE VOLTAGE (V)GS Fig. 4 Typical Drain-Source On-Resistance vs. Gate-Source Voltage R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) I= 2 AD 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0 2 4 6 8 1 01 21 41 61 82 0 0.10 I , DRAIN CURRENT (A) D Fig. 5 Typical On-Resistance vs. Drain Current and T emperature R , DRAIN-S OURCE ON-RESISTANCE ( )DS(ON) T = -55°CA T = 2 5 ° CA T = 8 5 ° CA T = 125°CA T = 150°CA V = 4.5VGS 0.6 0.8 1.2 1.4 1.6 1.8 1.0 - 5 0 - 2 5 0 2 55 07 5 1 0 0 1 2 5 1 5 0 T , JUNCTION TEMPERATURE ( C) Fig. 6 On-Resistance Variation with Temperature J R , DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) DS(ON) V = 4.5V I= 5 A GS D V=V I = 10A GS D 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C) Fig. 7 On-Resistance Variation with Temperature J R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) V= V I= 5 A GS D 4.5 V=V I= 1 0 A GS D 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.0 -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C) Fig. 8 Gate Threshold Variation vs. Ambient Temperature J V, GATE THRESHOLD VOLTAGE (V)GS(th) I= 1 m AD I = 250µAD
Document number: DS35405 Rev. 4 - 2 5 of 9 www.diodes.com August 2013 © Diodes Incorporated DMG6601LVT ADVANCE INFORMTION V , SOURCE-DRAIN VOLTAGE (V)SD Fig. 9 Diode Forward Voltage vs. Current I, S OURCE CURRENT (A)S T = -55°CA T = 25°CA T = 85°CA T = 125°CA T = 150°CA 1,000 100 C , JUNCTION CAPACITANCE (pF)T 0 5 10 15 20 25 30 V , DRAIN-SOURCE VOLTAGE (V)DS Fig. 10 Typical Junction Capacitance Ciss Coss Crss f = 1MHz 02 468 1 0 1 2 1 40 10V GATE THRESHOLD VOLTAGE (V)GS Q( n C )g, TOTAL GATE CHARGE Fig. 11 Gate Charge V= 1 5 V I= A DS D 3.1 t1, PULSE DURATION TIME (sec) Fig. 12 Transient Thermal Resistance 0.001 0.01 0.1 r(t), TRANSIENT THERMAL RESISTANCE R (t) = r(t) * R R = 143°C/W Duty Cycle, D = t1/ t2 JA JA JA D = 0.5 D = 0.7 D = 0.9 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 D = Single Pulse
Document number: DS35405 Rev. 4 - 2 6 of 9 www.diodes.com August 2013 © Diodes Incorporated DMG6601LVT ADVANCE INFORMTION P Channel - Q2 0 0.5 1.0 1.5 2.0 -V , DRAIN -SOURCE VOLTAGE (V) Fig. 13 Typical Output Characteristics DS -I , D RAIN CURRENT (A)D V= - 3 . 0 VGS V= - 3 . 5 VGS V= - 4 . 0 VGS V= - 4 . 5 VGS V= - 1 0 VGS V= - 5 . 0 VGS V= - 2 . 5 VGS V= - 2 . 0 VGS 01 234 -V , GATE-SOURCE VOLTAGE (V)GS Fig. 14 Typical Transfer Characteristics -I , D RAIN CURRENT (A)D T = 1 5 0 CA T = 1 2 5 CA T = 8 5 CA T = 2 5 CA T = - 5 5 CA V = -5.0VDS 0.02 0.04 0.06 0.08 0.12 0.14 0.16 0.18 02 46 8 1 0 0.10 0.20 R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) -I , DRAIN SOURCE CURRENT (A) Fig. 15 Typical On-Resistance vs. Drain Current and Gate Voltage D V = - 4 . 5 VGS V = - 1 0 VGS V = - 2 . 5 VGS 0.04 0.08 0.12 0.16 23 456789 1 0 -V , GATE-SOURCE VOLTAGE (V)GS Fig. 16 Typical Drain-Source On-Resistance vs. Gate-Source Voltage R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) I= - 2 AD 0.04 0.08 0.12 0.16 02 468 1 0 0.20 -I , DRAIN SOURCE CURRENT (A) Fig. 17 Typical On-Resistance vs. Drain Current and T emperature D R , DRAIN-S OURCE ON-RESISTANCE ( )DS(ON) T = - 5 5 CA T = 2 5 CA T = 8 5 CA T = 1 2 5 CA T = 1 5 0 CA V= - 4 . 5 VGS 0.6 0.8 1.2 1.4 1.8 1.0 R , DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) DS(ON) 1.6 -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)J Fig. 18 On-Resistance Variation with Temperature V = - 4 . 5 V I = - 5 A GS D V = -10V I = -10A GS D
Document number: DS35405 Rev. 4 - 2 7 of 9 www.diodes.com August 2013 © Diodes Incorporated DMG6601LVT ADVANCE INFORMTION 0.04 0.08 0.12 0.16 0-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)J Fig. 19 On-Resistance Variation with Temperature R , DRAIN-SOURCE ON-RESISTANCE ( )DS(on) V=5 V I= A GS D -4. V= - 1 0 V I= A GS D -10 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.0 -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C) Fig. 20 Gate Threshold Variation vs. Ambient Temperature A -V , GATE THRESHOLD VOLTAGE (V)GS(TH) -I = 1mAD -I = 250µAD -V , SOURCE-DRAIN VOLTAGE (V) Fig. 21 Diode Forward Voltage vs. Current SD -I , S OURCE CURRENT (A)S T= 2 5 CA T= - 5 5 CA T= 8 5 CA T= 1 2 5 CA T= 1 5 0 CA 0 5 10 15 20 25 30 1,000 100 C , JUNCTION CAPACITANCE (pF)T -V , DRAIN-SOURCE VOLTAGE (V) Fig. 22 Typical Junction Capacitance DS Coss Crss f = 1MHz Ciss 02 4681 0 1 2 1 4 Q , TOTAL GATE CHARGE (nC) Fig. 23 Gate-Charge Characteristics g 10-V , GATE-SOURCE VOLTAGE (V)GS V = -15V I= - 2 . 3 A DS D
Document number: DS35405 Rev. 4 - 2 8 of 9 www.diodes.com August 2013 © Diodes Incorporated DMG6601LVT ADVANCE INFORMTION Package Outline Dimensions Suggested Pad Layout t1, PULSE DURATION TIMES (sec) Fig. 24 Transient Thermal Resistance R (t) = r(t) * R R = 143°C/W Duty Cycle, D = t1/ t2 JA JA JA 0.001 0.01 0.1 r(t), TRANSIENT THERMAL RESISTANCE D = 0.7 D = 0.9 D = 0.5 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 Single Pulse TSOT26 Dim Min Max Typ A 1.00 A1 0.01 0.10 A2 0.84 0.90 D 2.90 E 2.80 E1 1.60 b 0.30 0.45 c 0.12 0.20 e 0.95 e1 1.90 L 0.30 0.50 L2 0.25 θ 0° 8° 4° θ1 4° 12° All Dimensions in mm Dimensions Value (in mm) C 0.950 X 0.700 Y 1.000 Y1 3.199 c L E1 E D e 6x b 4x 1 A C C X (6x) Y (6x)
Document number: DS35405 Rev. 4 - 2 9 of 9 www.diodes.com August 2013 © Diodes Incorporated DMG6601LVT ADVANCE INFORMTION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. Diodes Incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Inco rporated products for any unintended or una uthorized application, Customers shall i ndemnify and hold Diodes Incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporate d and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2012, Diodes Incorporated www.diodes.com
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