DMG4N65CT
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 6
Technical content
Features
Low Input Capacitance High BVDSS Rating for Power Application Low Input/Output Leakage Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Case: TO220-3 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish-Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Below Weight: 0.008 grams (Approximate) Ordering Information (Note 4) Part Number Case Packaging DMG4N65CT TO220-3 50 pieces/Tube Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlor ine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information Equivalent Circuit D S G = Manufacturer’s Marking 4N65CT = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 19 = 2019) WW = Week (01 to 53) Top View Pin Out Configuration TO220-3 Top View 4N65CT YYWW
Document number: DS35719 Rev. 5 - 4 2 of 6 www.diodes.com August 2019 © Diodes Incorporated DMG4N65CT ADVANCE INFORMATIO OBSOLETE – PART DISCONTINUED PART OBSOLETE - NO ALTERNATE PART Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current (Note 5) VGS = 10V Steady State TC = +25° C ID 4.0 A TC = +70° C 3.0 Pulsed Drain Current (Note 7) IDM 6 A Avalanche Current (Note 8) VDD = 100V, VGS = 10V, L = 60mH IAS 3.9 A Repetitive avalanche energy (Note 7) EAS 456 mJ Thermal Characteristics Characteristic Symbol Max Unit Power Dissipation (Note 5) PD 2.19 W Thermal Resistance, Junction to Ambient @TA = +25° C (Note 5) RθJA 58.5 ° C/W Power Dissipation (Note 6) PD 9.14 W Thermal Resistance, Junction to Ambient @TA = +25° C (Note 6) RθJA 2.85 ° C/W Thermal Resistance, Junction to Case @TA = +25° C (Note 6) RθJC 0.86 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 ° C Electrical Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BVDSS 650 V VGS = 0V, ID = 250A Zero Gate Voltage Drain Current TJ = +25° C IDSS 1.0 A VDS = 650V, VGS = 0V Gate-Source Leakage IGSS ±100 nA VGS = ±30V, VDS = 0V ON CHARACTERISTICS (Note 9) Gate Threshold Voltage VGS(TH) 3 5 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS (ON) 2.1 3.0 VGS = 10V, ID = 2A Forward Transfer Admittance |Yfs| 3.7 s VDS = 40V, ID = 2A Diode Forward Voltage VSD 0.7 1.0 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Ciss 900 pF VDS = 25V, VGS = 0V, f = 1.0MHz Output Capacitance Coss 50 Reverse Transfer Capacitance Crss 1.1 Gate Resistance Rg 2.4 VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge Qg 13.5 nC VGS = 10V, VDS = 520V, ID = 4A Gate-Source Charge Qgs 2.7 Gate-Drain Charge Qgd 3.8 Turn-On Delay Time tD(ON) 15.1 ns VGS = 10V, VDS = 325V, Rg = 25Ω, ID = 4A Turn-On Rise Time tR 13.8 ns Turn-Off Delay Time tD(OFF) 40 ns Turn-Off Fall Time tF 16 ns Body Diode Reverse Recovery Time tRR 515 ns dI/dt = 100A/s, VDS = 100V, IF = 4A Body Diode Reverse Recovery Charge QRR 2330 nC Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 6. Device mounted on an infinite heatsink 7. Repetitive rating, pulse width limited by junction temperature. 8. IAS and EAS ratings are based on low frequency and duty cycles to keep T J = +25°C. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to production testing.
Document number: DS35719 Rev. 5 - 4 3 of 6 www.diodes.com August 2019 © Diodes Incorporated DMG4N65CT ADVANCE INFORMATIO OBSOLETE – PART DISCONTINUED PART OBSOLETE - NO ALTERNATE PART 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 4 8 12 16 20 V , DRAIN-SOURCE VOLTAGE (V) Fig.1 Typical Output Characteristic DS I , DRAIN CURRENT (A)D I , DRAIN-SOURCE CURRENT (A)D Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) V = 10VGS V = 20VGS 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C) Fig. 5 On-Resistance Variation with Temperature J R , DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) DS(ON) V = V I = 4A GS D V = V I = 2A GS D 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C) Fig. 6 On-Resistance Variation with Temperature J R , DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) DS(ON) V = V I = 4A GS D V = V I = 2A GS D V = V I = 4A GS D V = V I = 2A GS D 0 1 2 3 4 I , DRAIN CURRENT (A) D Fig. 4 Typical On-Resistance vs. Drain Current and Temperature R , D R A I N - S O U R C E O N - R E S I S T A N C E ( D S ( O N ) T = -55° C A T = 25° C A T = 85° C A T = 125° C A T = 150° C A V = 10V GS RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.001 0.01 0.1 2 3 4 5 6 I , D R A I N C U R R E N T ( A ) D V , GATE-SOURCE VOLTAGE (V) GS Fig. 2 Typical Transfer Characteristics V = 10V DS T = 150° C A T = 125° C A T = 85° C A T = 25° C A T = -55° C A ID, DRAIN CURRENT (A)
Document number: DS35719 Rev. 5 - 4 4 of 6 www.diodes.com August 2019 © Diodes Incorporated DMG4N65CT ADVANCE INFORMATIO OBSOLETE – PART DISCONTINUED PART OBSOLETE - NO ALTERNATE PART V , SOURCE-DRAIN VOLTAGE (V)SD Fig.8 Diode Forward Voltage vs. Current I , SOURCE CURRENT (A)S T = 25 癈A 0.001 0.01 0.1 1 10 100 1,000 10,000 t1, PULSE DURATION TIME (sec) Fig. 10 Transient Thermal Resistance R = r * RJA(t) (t) JA JAR = 106 C/W Duty Cycle, D = t1/t2 0.001 0.01 0.1 r(t), TRANSIENT THERMAL RESISTANCE D = 0.5 D = 0.7 D = 0.9 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 D = Single Pulse 0 100 200 300 400 500 600 100 1,000 I , D R A I N L E A K A G E C U R R E N T ( n A ) D S S 10,000 V , DRAIN-SOURCE VOLTAGE (V) DS Fig. 9 Typical Drain-Source Leakage Current vs. Voltage T = 25° C A T = 85° C A T = 125° C A T = 150° C A T = -55° C A IDSS, DRAIN LEAKAGE CURRENT (nA) 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Junction Temperature J V , G A T E T H R E S H O L D V O L T A G E ( V ) G S ( t h ) I = 1mA D I = 250µ A D VGS(TH), GATE THRESHOLD VOLTAGE (V) TA = 25°C
Document number: DS35719 Rev. 5 - 4 5 of 6 www.diodes.com August 2019 © Diodes Incorporated DMG4N65CT ADVANCE INFORMATIO OBSOLETE – PART DISCONTINUED PART OBSOLETE - NO ALTERNATE PART Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version.
Document number: DS35719 Rev. 5 - 4 6 of 6 www.diodes.com August 2019 © Diodes Incorporated DMG4N65CT ADVANCE INFORMATIO OBSOLETE – PART DISCONTINUED PART OBSOLETE - NO ALTERNATE PART IMPORTANT NOTICE DIODES INCORPORA TED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license unde r its patent or trademark rights, nor the rights of others. Any Customer or user of this document or p roducts described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diod es Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product name s and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of t his document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support de vices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety -critical, life support devices or systems, notwithstanding any devices - or systems -related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2019, Diodes Incorporated www.diodes.com