DMG4N60SK3

DMG4N60SK3

Document overview

• Manufacturer or author: Diodes Incorporated
• PDF pages: 8

Technical content

Features

 100% Unclamped Inductive Switch (UIS) Test in Production  Low Gate Input Resistance  Low Input Capacitance  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Mechanical Data  Package: TO252  Package Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections: See Diagram  Terminals: Finish—Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208  Weight: 0.33 grams (Approximate) Ordering Information (Note 4) Part Number Package Packing Qty. Carrier DMG4N60SK3-13 TO252 2500 Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information Internal Schematic G S D D Top View Pin Out Top View TO252 YYWW 4N3D0S =Manufacturer’s Marking 4N3D0S= Product Type Marking Code YYWW = Date Code Marking YY or YY= Last Digit of Year (ex: 14 = 2014) WW or WW= Week Code (01 to 53) Green PART OBSOLETE - CONTACT US

Document number: DS37697 Rev. 4 - 4 2 of 8 www.diodes.com August 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. DMG4N60SK3 OBSOLETE – PART DISCONTINUED Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current, VGS = 10V Steady State TC = +25° C TC = +100° C ID 3.7 2.4 A Maximum Body Diode Forward Current IS 3.7 A Pulsed Drain Current (10µs pulse, Duty Cycle = 1%) IDM 5 A Avalanche Current, L = 60mH (Note 6) IAS 1.7 A Avalanche Energy, L = 60mH (Note 6) EAS 90 mJ Thermal Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation TC = +25° C PD 48 W TC = +100° C 19 Thermal Resistance, Junction to Ambient (Note 5) RϴJA 47 ° C/W Thermal Resistance, Junction to Case RϴJC 2.6 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 600 — — V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS — — 1 µ A VDS = 600V, VGS = 0V Gate-Source Leakage IGSS — — 100 nA VGS = ±30V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) 2.5 3.5 4.5 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance RDS(ON) — 2.0 2.3  VGS = 10V, ID = 2A Diode Forward Voltage VSD — 0.8 1.4 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Ciss — 532 — pF VDS = 25V, f = 1.0MHz, VGS = 0 Output Capacitance Coss — 47 — Reverse Transfer Capacitance Crss — 4 — Gate Resistance RG — 3.3 — Ω VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge (VGS = 10V) Qg — 14.3 — nC VDD = 480V, ID = 4A, VGS = 10V Gate-Source Charge Qgs — 3.3 — Gate-Drain Charge Qgd — 6.9 — Turn-On Delay Time tD(ON) — 14 — ns VDD = 300V, RG = 25Ω, ID = 4A, VGS = 10V Turn-On Rise Time tR — 34 — Turn-Off Delay Time tD(OFF) — 32 — Turn-Off Fall Time tF — 25 — Body Diode Reverse Recovery Time tRR — 229 — ns dI/dt = 100A/μs, VDS = 100V, IF = 4A Body Diode Reverse Recovery Charge QRR — 1564 — nC Notes: 5. Device mounted on FR-4 substrate PCB, 2oz copper, with 1inch square copper pad layout. 6. Guaranteed by design. Not subject to production testing . 7. Short duration pulse test used to minimize self-heating effect.

© 2022 Copyright Diodes Incorporated. All Rights Reserved. Please see http://www.diodes.com/package-outlines.html for the latest version. Figure 13. Transient Thermal Resistance

Document number: DS37697 Rev. 4 - 4 6 of 8 www.diodes.com August 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. DMG4N60SK3 OBSOLETE – PART DISCONTINUED Package Outline Dimensions (continued) Please see http://www.diodes.com/package-outlines.html for the latest version. (2) Package Type: TO252 (DPAK) (Type BR) TO252 (DPAK) (Type BR) Dim Min Max Typ A 2.20 2.40 — A1 0.00 0.10 — b 0.50 0.70 — b3 5.20 5.40 — c 0.45 0.55 — D 5.95 6.25 — D1 5.10 5.50 — E 6.45 6.70 — E1 4.71 4.91 — e 2.24 2.34 — H 9.45 9.95 — L 1.25 1.75 — L3 0.95 1.25 — L4 0.60 0.90 — All Dimensions in mm (3) Package Type: TO252 (DPAK) (Type TH) TO252 (DPAK) (Type TH) Dim Min Max Typ A 2.20 2.38 2.30 A1 0.00 0.10 — A2 0.97 1.17 1.07 A4 0.10 REF b 0.72 0.85 0.78 b3 5.23 5.45 5.33 c 0.47 0.58 0.53 D 6.00 6.20 6.10 D1 5.30 REF e 2.286 BSC E 6.50 6.70 6.60 E1 4.70 4.92 4.83 H 9.90 10.10 10.30 L 1.40 1.70 1.60 L2 0.51 BSC L3 0.90 1.25 — L4 0.60 1.00 0.80 L5 1.70 1.90 1.80 a 0° 8° — All Dimensions in mm E D b2( 2x) b( 3x)e D1E1 c A H L c A 7° ±2° H Seating Plane Gauge Plane a L 2.90REF A4L5 7° ±2° 7° ±2° E D b( 3x) e D1E1 Ø1.200

Document number: DS37697 Rev. 4 - 4 7 of 8 www.diodes.com August 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. DMG4N60SK3 OBSOLETE – PART DISCONTINUED Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. TO252 (DPAK) Dimensions Value (in mm) C 4.572 X 1.060 X1 5.632 Y 2.600 Y1 5.700 Y2 10.700 X Y C

Document number: DS37697 Rev. 4 - 4 8 of 8 www.diodes.com August 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. DMG4N60SK3 OBSOLETE – PART DISCONTINUED IMPORTANT NOTICE 1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes ’ products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes’ products. Diodes’ products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of Diodes’ products for their intended applications, (c) ensuring their applications, which incorporate Diodes’ products, comply the applicable legal and regulatory requirements as well as sa fety and functional- safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, valida tion, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 3. 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