DMG4800LFG DIODES | Alldatasheet

Document overview

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  • PDF pages: 6

Technical content

Features

  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Lead Free By Design/RoHS Compliant (Note 1)
  • "Green" Device (Note 2)
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data
  • Case: DFN3030-8
  • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals: Finish - NiPdAu ov er Copper lead frame. Solderable per MIL-STD-202, Method 208
  • Polarity: See Diagram
  • Marking Information: See Page 5
  • Ordering Information: See Page 5
  • Weight: 0.0172 grams (approximate) Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±25 V Drain Current (Note 3) Steady State T A = 25°C TA = 85°C ID 7.44 4.82 A Pulsed Drain Current (Note 4) IDM 40 A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Total Power Dissipation (Note 3) PD 0.94 W Thermal Resistance, Junction to Ambient RθJA 133 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 1. No purposefully added lead. 3. Device mounted on FR-4 PCB with minimum recommended pad layout. 4. Repetitive rating, pulse width limited by junction temperature. TOP VIEW Internal Schematic TOP VIEW 1 234 876 5 56 78 43 21 GSSS D BOTTOM VIEW Pin Configuration BOTTOM VIEW

Document number: DS31785 Rev. 3 - 2 2 of 6 www.diodes.com November 2009 © Diodes Incorporated DMG4800LFG NEW PRODUCT Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BVDSS 30 - - V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current TJ = 25°C IDSS - - 1.0 μA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS - - ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(th) 0.8 - 1.5 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS (ON) - 11 24 mΩ V GS = 10V, ID = 9A VGS = 4.5V, ID = 7A Forward Transfer Admittance |Yfs| - 8 - S VDS = 10V, ID = 9A Diode Forward Voltage VSD - 0.7 1.0 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Ciss - 798 - pF VDS = 10V, VGS = 0V, f = 1.0MHz Output Capacitance Coss - 128 - pF Reverse Transfer Capacitance Crss - 122 - pF Gate Resistance Rg - 1.37 - Ω VDS =0V, VGS = 0V, f = 1MHz Total Gate Charge Qg - 9.47 - nC VGS = 5V, VDS = 15V, ID = 9A Gate-Source Charge Qgs - 1.87 - nC Gate-Drain Charge Qgd - 5.60 - nC Turn-On Delay Time tD(on) - 5.03 - ns VDD = 15V, VGEN = 10V, RL = 15Ω, RG = 6Ω, ID = 1A Turn-On Rise Time tr - 4.50 - ns Turn-Off Delay Time tD(off) - 26.33 - ns Turn-Off Fall Time tf - 8.55 - ns Notes: 5. Short duration pulse test used to minimize self-heating effect. 6. Guaranteed by design. No t subject to product testing. 0 0.5 1 1.5 2 30I, D RAIN CURRENT (A)D Fig. 1 Typical Output Characteristic V , DRAIN-SOURCE VOLTAGE (V)DS V = 2.0VGS V = 3.0VGS V = 4.5VGS V = 10VGS V = 2.5VGS I, D RAIN CURRENT (A)D 1 1.5 2 2.5 3 Fig. 2 Typical Transfer Characteristic V , GATE-SOURCE VOLTAGE (V)GS T = - 5 5 ° CA T = 2 5 ° CA T = 8 5 ° CAT = 1 2 5 ° CA T = 1 5 0 ° CA V = 5 VDS

Document number: DS31785 Rev. 3 - 2 3 of 6 www.diodes.com November 2009 © Diodes Incorporated DMG4800LFG NEW PRODUCT 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0 5 10 15 20 25 30 Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage I , DRAIN-SOURCE CURRENT (A)D R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) Ω V = 4.5VGS V = 2.5VGS 0.01 0.02 0.03 0 5 10 15 20 25 30 I , DRAIN CURRENT (A)D Fig. 4 Typical On-Resistance vs. Drain Current and T emperature R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) Ω T = -55°CA T = 2 5 ° CA T = 8 5 ° CA T = 125°CA T = 150°CA V = 4.5VGS Fig. 5 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)A 0.6 0.8 1.0 1.2 1.4 1.8 R , DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) DSON 1.6 V = 4.5V I = 1 0 A GS D V = 10V I = 1 1 . 6 A GS D 0.005 0.01 0.015 0.02 0.025 0.03 Fig. 6 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)A R , DRAIN-SOURCE ON-RESISTANCE ( )DSON Ω V = 10V I = 1 1 . 6 A GS D V = 4.5V I = 1 0 A GS D Fig. 7 Gate Threshold Variation vs. Ambient Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)A V , GATE THRESHOLD VOLTAGE (V)GS(TH) 0.4 0.8 1.2 1.6 I = 250µAD I = 1 m AD Fig. 8 Diode Forward Voltage vs. Current V , SOURCE-DRAIN VOLTAGE (V)SD I, S OURCE CURRENT (A)S T = 25°CA

Document number: DS31785 Rev. 3 - 2 4 of 6 www.diodes.com November 2009 © Diodes Incorporated DMG4800LFG NEW PRODUCT 0 5 10 15 20 25 30 100 1,000 10,000C, CAPACITANCE (pF) Fig. 9 Typical Total Capacitance V , DRAIN-SOURCE VOLTAGE (V)DS Ciss Crss Coss 02 4 6 8 1 0 1 2 1 4 1 6 Fig. 10 Total Gate Charge V, GATE-SOURCE VOLTAGE (V)GS Q , TOTAL GATE CHARGE (nC)G I = 11.6AD I = 9 AD 0 5 10 15 20 25 30 Fig. 11 Typical Leakage Current vs. Drain-Source Voltage V , DRAIN-SOURCE VOLTAGE (V) DS 100 1,000 10,000 I, L E A K AGE CURRENT (nA) DSS T = -55°CA T = 2 5 ° CA T = 8 5 ° CA T = 125°CA T = 150°CA 0.0001 0.001 0.01 0.1 1 10 100 1,000 Fig. 12 Single Pulse Maximum Power Dissipation t , PULSE DURATION TIME (s)1 P , PEAK T RANSIENT POWER (W)(pk) 100 Single Pulse R = 131°C/W T - T = P * R ( t ) θ θ JA JA J A R (t) = r(t) * θJA RθJA 0.00001 0.001 0.01 0.1 1 10 100 1,000 Fig. 13 Transient Thermal Response t , PULSE DURATION TIME (s)1 0.0001 T - T = P * R ( t ) Duty Cycle, D = t /t JA J A θ R (t) = r(t) * θJA R R = 131°C/W θ θ JA JA P(pk) 0.001 0.01 0.1 r(t), TRANSIENT THERMAL RESISTANCE D = 0.7 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 D = Single Pulse D = 0.9 D = 0.5

Document number: DS31785 Rev. 3 - 2 5 of 6 www.diodes.com November 2009 © Diodes Incorporated DMG4800LFG NEW PRODUCT Ordering Information (Note 7) Part Number Case Packaging DMG4800LFG-7 DFN3030-8 3000/Tape & Reel Marking Information Package Outline Dimensions Suggested Pad Layout DFN3030-8 Dim Min Max Typ A 0.57 0.63 0.60 A1 0 0.05 0.02 A3 ⎯ ⎯ 0.15 b 0.29 0.39 0.34 D 2.90 3.10 3.00 D2 2.19 2.39 2.29 e ⎯ ⎯ 0.65 E 2.90 3.10 3.00 E2 1.64 1.84 1.74 L 0.30 0.60 0.45 All Dimensions in mm Dimensions Value (in mm) Z 2.59 G 0.11 X1 2.49 X2 0.65 Y 0.39 C 0.65 N48 YYWW N48 = Product marking code YYWW = Date code marking YY = Last digit of year (ex: 09 for 2009) WW = Week code 01 to 52 D A L E SEATING PLANE e b R0.200 Z G YC DFN3030-8

Document number: DS31785 Rev. 3 - 2 6 of 6 www.diodes.com November 2009 © Diodes Incorporated DMG4800LFG NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or an y product described herein; neither does Di odes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or us er of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. Should Customers purchase or use Diodes Inco rporated products for any unintended or una uthorized application, Customers shall i ndemnify and hold Diodes Incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support dev ice or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporate d and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2009, Diodes Incorporated www.diodes.com