DMG3420UQ
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 7
Technical content
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Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Terminals Connections: See Diagram Below Weight: 0.008 grams (Approximate) Ordering Information (Note 5) Part Number Qualification Case Packaging DMG3420UQ-7 Automotive SOT23 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information Date Code Key Year 2009 ~ 2019 2020 2021 2022 2023 2024 2025 2026 2027 Code W ~ G H I J K L M N O Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Top View Equivalent Circuit Top View D G S G31 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: G = 2019) M = Month (ex: 9 = September) G31 YM SOT23 D S G
Document number: DS41788 Rev. 1 - 2 2 of 7 www.diodes.com March 2019 © Diodes Incorporated DMG3420UQ NEW PRODUCT Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current (Note 6) Steady State TA = +25° C TA = +85°C ID 5.47 3.43 A Pulsed Drain Current (Note 7) IDM 20 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 6) PD 0.74 W Thermal Resistance, Junction to Ambient @TA = +25° C (Note 6) RθJA 167 ° C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS 20 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current TJ = +25° C IDSS — — 1.0 µA VDS = 20V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±12V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(TH) 0.5 0.95 1.2 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) — 21 29 VGS = 10V, ID = 6A — 25 35 VGS = 4.5V, ID = 5A — 34 48 VGS = 2.5V, ID = 4A — 65 91 VGS = 1.8V, ID = 2A Forward Transfer Admittance |Yfs| — 9 — s VDS = 5V, ID = 3.8A Diode Forward Voltage VSD — 0.75 1.0 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss — 434.7 — pF VDS = 10V, VGS = 0V, f = 1.0MHz Output Capacitance Coss — 69.1 — pF Reverse Transfer Capacitance Crss — 61.2 — pF Gate Resistance Rg — 1.53 — VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge Qg — 5.4 — nC VGS = 4.5V, VDS = 10V, ID = 6A Gate-Source Charge Qgs — 0.9 — nC Gate-Drain Charge Qgd — 1.5 — nC Turn-On Delay Time tD(ON) — 6.5 — ns VDD = 10V, VGS = 5V, RL = 1.7, Rg = 6 Turn-On Rise Time tR — 8.3 — ns Turn-Off Delay Time tD(OFF) — 21.6 — ns Turn-Off Fall Time tF — 5.3 — ns Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Repetitive rating, pulse width limited by junction temperature. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing.
Document number: DS41788 Rev. 1 - 2 3 of 7 www.diodes.com March 2019 © Diodes Incorporated DMG3420UQ NEW PRODUCT Fig. 1 Typical Output Characteristics V , DRAIN-SOURCE VOLTAGE (V)DS I , DRAIN CURRENT (A)D V = 1.5VGS V = 3.0VGS V = 4.5VGS V = 10VGS V = 2.0VGS V = 3.5VGS V = 2.5VGS V = 1.8VGS 0.02 0.04 0.06 0.08 0 5 10 15 20 Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage I , DRAIN-SOURCE CURRENT (A)D R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) V = 2.5VGS V = 4.5VGS 0.5 0.7 0.9 1.1 1.3 1.5 1.7 Fig. 5 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (癈)J R , DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) DS(ON) V = 4.5V I = 10A GS D V = 2.5V I = 5A GS D 0.01 0.02 0.03 0.04 0.05 0.06 Fig. 6 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (癈)J R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) V = 4.5V I = 10A GS D V = 2.5V I = 5A GS D 0.02 0.04 0.06 0.08 0 5 10 15 20 I , DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature D R D R A I N - S O U R C E O N - R E S I S T A N C E ( D S ( O N ) V = 4.5V GS T = -55° C A T = 25° C A T = 85° C A T = 125° C A T = 150° C A RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 1 2 3 4 Fig. 2 Typical Transfer Characteristics V , GATE SOURCE VOLTAGE (V) GS I D R A I N C U R R E N T ( A ) D V = 5V DS T = -55° C A T = 25° C A T = 125° C A T = 150° C A T = 85° C A ID, DRAIN CURRENT (A) (°C) (°C)
Document number: DS41788 Rev. 1 - 2 4 of 7 www.diodes.com March 2019 © Diodes Incorporated DMG3420UQ NEW PRODUCT V , SOURCE-DRAIN VOLTAGE (V)SD Fig. 8 Diode Forward Voltage vs. Current 20I , SOURCE CURRENT (A)S T = 25癈A 0 5 10 15 20 Fig. 9 Typical Capacitance V , DRAIN-SOURCE VOLTAGE (V)DS C, CAPACITANCE (pF) 100 1,000 f = 1MHz Ciss Coss Crss 0.01 0.1 100 0.1 1 10 100 R Limited DS(ON) DC P = 10s W P = 1s W P = 100ms W P = 10ms W P = 1ms W P = 100µ s W T = 150° C T = 25° C J(MAX) A V = 10V Single Pulse GS DUT on 1 * MRP Board V , DRAIN-SOURCE VOLTAGE (V) Fig. 11 SOA, Safe Operation Area DS I D R A I N C U R R E N T ( A ) D ID, DRAIN CURRENT (A) Fig. 7 Gate Threshold Variation vs. Ambient Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (° C) A 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 V G A T E T H R E S H O L D V O L T A G E ( V ) G S ( T H ) I = 1mA D I = 250µ A D VGS(TH), GATE THRESHOLD VOLTAGE (V) TA = 25°C 0 5 10 15 20 Fig. 10 Typical Drain-Source Leakage Current vs. Drain-Source Voltage V , DRAIN-SOURCE VOLTAGE (V) DS 100 1,000 10,000 I D R A I N - S O U R C E L E A K A G E C U R R E N T ( n A ) D S S T = 25° C A T = 85° C A T = 125° C A T = 150° C A IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA)
Document number: DS41788 Rev. 1 - 2 5 of 7 www.diodes.com March 2019 © Diodes Incorporated DMG3420UQ NEW PRODUCT Fig. 12 Transient Thermal Response t , PULSE DURATION TIME (s)1 T - T = P * R (t) Duty Cycle, D = t /t J A JA R (t) = r(t) * JA R R = 162 癈/W JA JA P(pk) 0.001 0.01 0.1 r(t), TRANSIENT THERMAL RESISTANCE D = 0.7 D = 0.5 D = 0.3 D = 0.05 D = 0.02 D = 0.01 D = 0.005 D = Single Pulse D = 0.9 D = 0.1 162°C/W
Document number: DS41788 Rev. 1 - 2 6 of 7 www.diodes.com March 2019 © Diodes Incorporated DMG3420UQ NEW PRODUCT Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0° 8° -- All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Dimensions Value (in mm) C 2.0 X 0.8 X1 1.35 Y 0.9 Y1 2.9 J K1 K GAUGE PLANE 0.25 H L M All 7° A C B D GF a X Y Y1 C
Document number: DS41788 Rev. 1 - 2 7 of 7 www.diodes.com March 2019 © Diodes Incorporated DMG3420UQ NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license unde r its patent or trademark rights, nor the rights of others. Any Customer or user of th is document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diod es Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, internation al or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into mul tiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems witho ut the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety -critical, life support devices or systems, notwithstanding any devices - or systems -related information or support that may be pr ovided by Diod es Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2019, Diodes Incorporated www.diodes.com