DMG3415U-7 DIODES | Alldatasheet

Document overview

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  • PDF pages: 6

Technical content

Features

  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • ESD Protected Up To 3kV
  • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data
  • Case: SOT23
  • Case Material: Molded Plastic, “Green” Molding Compound.
  • UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals: Finish ۛMatte Tin annealed over Copper leadframe.
  • Solderable per MIL-STD-202, Method 208
  • Terminals Connections: See Diagram Below
  • Weight: 0.008 grams (approximate) Ordering Information (Note 4) Part Number Qualification Case Packaging DMG3415U-7 Commercial SOT23 3,000/Tape & Reel DMG3415UQ-7 Automotive SOT23 3,000/Tape & Reel DMG3415U-13 Commercial SOT23 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directiv e 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more in formation about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information Top View Internal Schematic Top View Equivalent Circuit D G S Source Gate Protection Diode Gate Drain ESD PROTECTED TO 3kV 34P = Product Type Marking Code YW = Date Code Marking Y = Year (ex: W = 2009) W = Week (ex: A ~ Z = Weeks 1 ~ 26 a ~ y = Weeks 27 ~ 51 z = Weeks 52 and 53 DMG3415U-7 SOT23 34P YW

Document number: DS31735 Rev. 9 - 2 2 of 6 www.diodes.com October 2012 © Diodes Incorporated DMG3415U Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±8 V Continuous Drain Current (Note 5) VGS = -4.5V Steady State TA = +25°C TA = +70°C ID -4.0 -3.5 A Pulsed Drain Current (10μs pulse, duty cycle = 1%) IDM -30 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 5) PD 0.9 W Thermal Resistance, Junction to Ambient (Note 5) RθJA 139 °C/W Thermal Resistance, Junction to case (Note 5) RθJC 32 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BVDSS -20 ⎯ ⎯ V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ -1 µA VDS = -20V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±10 µA VGS = ±8.0V, VDS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(th) -0.3 −0.55 -1.0 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS (ON) ⎯ 31 42.5 mΩ VGS = -4.5V, ID = -4.0A Forward Transfer Admittance |Yfs| 3 ⎯ S VDS = -5V, ID = -4A DYNAMIC CHARACTERISTICS Input Capacitance Ciss ⎯ 294 ⎯ pF VDS = -10V, VGS = 0V f = 1.0MHz Output Capacitance Coss ⎯ 104 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 25 ⎯ pF Gate Resistnace Rg 250 Ω VDS = 0V, VGS = 0V, f = 1.0MHz SWITCHING CHARACTERISTICS Total Gate Charge Qg ⎯ 9.1 ⎯ nC VGS = -4.5V, VDS = -10V ID = -4A Gate-Source Charge Qgs ⎯ 1.5 ⎯ nC Gate-Drain Charge Qgd ⎯ 1.7 ⎯ nC Turn-On Delay Time tD(on) ⎯ 71 ⎯ ns VDS = -10V, VGS = -4.5V, RD = 2.5Ω, RG = 3.0Ω, ID = -1A Turn-On Rise Time tr ⎯ 117 ⎯ ns Turn-Off Delay Time tD(off) ⎯ 795 ⎯ ns Turn-Off Fall Time tf ⎯ 393 ⎯ ns Notes: 5. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout. 6. Short duration pulse test used to minimize self-heating effect.

Document number: DS31735 Rev. 9 - 2 3 of 6 www.diodes.com October 2012 © Diodes Incorporated DMG3415U 01 2 3 4 5 Fig. 1 Typical Output Characteristic V , DRAIN-SOURCE VOLTAGE (V)DS 20I, D RAIN CURRENT (A)D V = 2.0VGS V = 3.0VGS V = 3.5VGS V = 4.5VGS V = 2.5VGS V = 1.5VGS 0.5 1 1.5 2 2.5 Fig. 2 Typical Transfer Characteristic V , GATE-SOURCE VOLTAGE (V)GS I, D RAIN CURRENT (A)D T = -55°CA T = 2 5 ° CA T = 8 5 ° CAT = 1 2 5 ° CA T = 1 5 0 ° CA V = 5 VDS 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 04 8 1 2 1 6 2 0 Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage I , DRAIN-SOURCE CURRENT (A)D R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) Ω V = 4.5VGS V = 2.5VGS 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 048 1 2 1 6 2 0 I , DRAIN CURRENT (A)D Fig. 4 Typical On-Resistance vs. Drain Current and T emperature R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) Ω T = - 5 5 ° CA T = 2 5 ° CA T = 8 5 ° CA T = 125°CA T = 1 5 0 ° CA V = 4 . 5 VGS Fig. 5 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)A 0.6 0.8 1.0 1.2 1.4 R , DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) DSON 1.6 V = 4.5V I = 1 0 A GS D V = 2.5V I = 5 A GS D 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 Fig. 6 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)A R , DRAIN-SOURCE ON-RESISTANCE ( )DSON Ω V = 4.5V I = 10A GS D V = 2.5V I = 5 A GS D

Document number: DS31735 Rev. 9 - 2 4 of 6 www.diodes.com October 2012 © Diodes Incorporated DMG3415U 0.3 0.6 0.9 1.2 Fig. 7 Gate Threshold Variation vs. Ambient Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)A V , GATE THRESHOLD VOLTAGE (V)GS(TH) I = 250µAD I = 1 m AD Fig. 8 Diode Forward Voltage vs. Current V , SOURCE-DRAIN VOLTAGE (V)SD I, S OURCE CURRENT (A)S T = 2 5 ° CA 100 1,000 10,000 100,000 Fig. 9 Typical Leakage Current vs. Drain-Source Voltage V , DRAIN-SOURCE VOLTAGE (V) DS 2 4 6 8 10 12 14 16 18 20 T = -55°CA T = 25°CA T = 85°CA T = 125°CA T = 150°CA I , LEAKAGE CURRENT (nA) DSS 0.00001 0.001 0.01 0.1 1 10 100 1,000 Fig. 10 Transient Thermal Response t , PULSE DURATION TIME (s)1 0.0001 T - T = P * R ( t ) Duty Cycle, D = t /t JA J A θ R (t) = r(t) * θJA R R = 171°C/W θ θ JA JA P(pk) 0.001 0.01 0.1 r(t), TRANSIENT THERMAL RESISTANCE D = 0.7 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 D = Single Pulse D = 0.9 D = 0.5

Document number: DS31735 Rev. 9 - 2 5 of 6 www.diodes.com October 2012 © Diodes Incorporated DMG3415U Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 - - 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 α 0° 8° - All Dimensions in mm Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 A M J L D F B C H K G X E Y CZ

Document number: DS31735 Rev. 9 - 2 6 of 6 www.diodes.com October 2012 © Diodes Incorporated DMG3415U IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described he rein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. Should Customers purchase or use Diodes Inco rporated products for any unintended or una uthorized application, Customers shall i ndemnify and hold Diodes Incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of t his document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporate d and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2012, Diodes Incorporated www.diodes.com