DMG3407SSN
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- Manufacturer or author: Diodes Incorporated
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Document number: DS35135 Rev. 6 - 2 1 of 6 www.diodes.com July 2016 © Diodes Incorporated DMG3407SSN ADVANCE INFORMATION P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS RDS(ON) max ID max TA = +25° C -30V 50mΩ @ VGS = -10V -4.0A 72mΩ @ VGS = -4.5V -3.3A Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Load Switch DC-DC Converters Power Management Functions Features and Benefits Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Case: SC59 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.014 grams (Approximate) Ordering Information (Note 4) Part Number Case Packaging DMG3407SSN-7 SC59 3000 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Hal ogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm tota l Br + Cl) and <1000ppm antimony compounds. Marking Information Date Code Key Year 2010 ~ 2016 2017 2018 2019 2020 Code X ~ D E F G H Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D SC59 Top View Pin Configuration S o u rce G a te D ra inInternal Schematic D G S G32 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: D = 2016) M = Month (ex: 9 = September) G32 YM
Document number: DS35135 Rev. 6 - 2 2 of 6 www.diodes.com July 2016 © Diodes Incorporated DMG3407SSN ADVANCE INFORMATION Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 6) VGS = -10V Steady State TA = +25° C TA = +70° C ID -4.0 -3.2 A t<10s TA = +25° C TA = +70° C ID -4.6 -3.6 A Continuous Drain Current (Note 6) VGS = -4.5V Steady State TA = +25° C TA = +70° C ID -3.3 -2.6 A t<10s TA = +25° C TA = +70° C ID -3.9 -3.1 A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) IDM -30 A Maximum Body Diode Forward Current (Note 6) IS -2.0 A Thermal Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 5) TA = +25° C PD 1.1 W TA = +70°C 0.7 Thermal Resistance, Junction to Ambient (Note 5) Steady state RJA 166 ° C/W t<10s 118 Total Power Dissipation (Note 6) TA = +25° C PD 1.8 W TA = +70°C 1.1 Thermal Resistance, Junction to Ambient (Note 6) Steady state RJA 98 ° C/W t<10s 71 Thermal Resistance, Junction to Case (Note 6) RJC 18 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@ TA = +25° C, unless otherwise stated.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS -30 - - V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current, TJ = +25° C IDSS - - -1 A VDS = -30V, VGS = 0V Gate-Source Leakage IGSS - - ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) -1.0 -1.5 -2.1 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS(ON) - 39 50 mΩ VGS = -10V, ID = -4.1A Forward Transfer Admittance |Yfs| - 8.2 - S VDS = -5V, ID = -4A Diode Forward Voltage VSD - -0.75 -1.1 V VGS = 0V, IS = -1A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss 466 582 700 pF VDS = -15V, VGS = 0V, f = 1.0MHz Output Capacitance Coss 80 114 148 Reverse Transfer Capacitance Crss 47 76 105 Gate Resistance Rg 2 5 8 Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge Qg 10.6 13.3 16 nC VGS = -10V, VDS = -15V, ID = -4A Total Gate Charge Qg 5.2 6.5 8.5 VGS = -4.5V, VDS = -15V,ID = -4A Gate-Source Charge Qgs 1.3 1.7 2 Gate-Drain Charge Qgd 1.1 1.9 2.7 Turn-On Delay Time tD(ON) - 6.0 - ns VGS = -10V, VDS = -15V, RL = 3.6Ω, RG = 3Ω Turn-On Rise Time tR - 12.9 - Turn-Off Delay Time tD(OFF) - 35.4 - Turn-Off Fall Time tF - 30.7 - Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. The power dissipation PD is based on t<10s RJA. 6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2 oz. copper, single sided. The power dissipation PD is based on t<10s RJA. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing.
Document number: DS35135 Rev. 6 - 2 3 of 6 www.diodes.com July 2016 © Diodes Incorporated DMG3407SSN ADVANCE INFORMATION -V , DRAIN -SOURCE VOLTAGE(V) Fig. 1 Typical Output Characteristics DS 0 1 2 3 4 5 -I , DRAIN CURRENT (A)D V = -2.0VGS V = -2.5VGS V = -3.5VGS V = -3.0VGS V = -4.0VGS V = -4.5VGS -V , GATE-SOURCE VOLTAGE (V)GS Fig. 2 Typical Transfer Characteristics -I , DRAIN CURRENT (A)D T = 150 CA T = 125 CA T = 85 CA T = 25 CA T = -55 CA V = -5.0VDS 0.02 0.04 0.06 0.08 0.12 0.10 R ,DRAIN-SOURCE ON-RESISTANCE( )DS(ON) 0 2 4 6 8 10 -I , DRAIN SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage D 0 2 4 6 8 10 -I , DRAIN SOURCE CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature D R , DRAIN-SOURCE ON-RESISTANCE( )DS(ON) V = -4.5VGS T = -55 CA T = 25 CA T = 85 CA T = 125 CA T = 150 CA 0.5 0.7 0.9 1.1 1.3 1.5 1.7 -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)J Fig. 5 On-Resistance Variation with Temperature R , DRAIN-SOURCE ON-RESISTANCE (Normalized) DS(ON) 0.02 0.04 0.06 0.08 0.10 0.12 R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)J Fig. 6 On-Resistance Variation with Temperature V = -10V I = A GS D -10 V = .5V I = A GS D (A)
Document number: DS35135 Rev. 6 - 2 4 of 6 www.diodes.com July 2016 © Diodes Incorporated DMG3407SSN ADVANCE INFORMATION 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE ( 癈) Fig. 7 Gate Threshold Variation vs. Ambient Temperature A -V , GATE THRESHOLD VOLTAGE(V)GS(TH) -V , SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current SD 10-I , SOURCE CURRENT (A)S 100 1,000 -V , DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Junction Capacitance DS 0 5 10 15 20 25 30 C , JUNCTION CAPACITANCE (pF)T Coss Crss f = 1MHz Ciss 0 4 8 12 16 Q , TOTAL GATE CHARGE (nC) Fig. 11 Gate-Charge Characteristics g 10-V , GATE-SOURCE VOLTAGE (V)GS 0.00001 0.001 0.1 10 1,000 t1, Pulse Duration Time (sec) Fig. 12 Single Pulse Maximum Power Dissipation 100 150 200 250 300 350 400 P , PEAK TRANSIENT POWER (W)(pk) Single Pulse R = 164 C/WJA R = R * r(t) (t)JA JA T -T = P * RJA JA(t) 2 6 10 14 18 22 26 30 -V , DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Drain-Source Leakage Current vs. Voltage DS - I , L E A K A G E C U R R E N T ( n A ) D S S 0.1 100 1,000 10,000 T =150° C A T =125° C A T =85° C A T = 25° C A -IDSS, LEAKAGE CURRENT (nA) (oC)
Document number: DS35135 Rev. 6 - 2 5 of 6 www.diodes.com July 2016 © Diodes Incorporated DMG3407SSN ADVANCE INFORMATION t1, PULSE DURATION TIMES (sec) Fig. 13 Transient Thermal Resistance 0.001 0.01 0.1 r(t), TRANSIENT THERMAL RESISTANCE R (t) = r(t) * RJA JA R = 164 癈 /W Duty Cycle, D = t1/ t2 JA D = 0.7 D = 0.9 D = 0.5 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 Single Pulse Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SC59 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D - - 0.95 G - - 1.90 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 N 0.70 0.80 0.75 0° 8° - All Dimensions in mm Dimensions Value (in mm) Z 3.4 X 0.8 Y 1.0 C 2.4 E 1.35 A M J LD B C H K G N X E Y CZ RθJA(t) = r(t)* RθJA RθJA = 164oC/W Duty Cycle, D = t1/t2 t1, PULSE DURATION TIME (sec) Fig. 13 Transient Thermal Resistance
Document number: DS35135 Rev. 6 - 2 6 of 6 www.diodes.com July 2016 © Diodes Incorporated DMG3407SSN ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated d oes not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license unde r its patent or trademark rights, nor the rights of others. Any Customer or user o f this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diod es Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized applicat ion, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product nam es and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety -critical, life support devices or systems, notwithstanding any devices - or systems -related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2016, Diodes Incorporated www.diodes.com