DMG3402LQ LEIDITECH | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
30V N-Channel Enhancement Mode MOSFET
Description
Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 3404B SOT-23 Ø180mm 8 mm 3000 units Dimensions SOT-23 Pin Configuration Rev : 01.07.2021 1/ www.leiditech.com Absolute Maximum Ratings (TC=25℃unless otherwise noted) The DMG3402LQ uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. VDS = 30V ID =4.2A RDS(ON) < 38mΩ @ VGS=10V Lithium battery protection Wireless impact Mobile phone fast charging Symbol Parameter Max. Units V DSS Drain Source Voltage V V GSS Gate Source Voltage ±20 V I D A =25 Continuous Drain Current 4.2 A I D A =70 Continuous Drain Current 2.6 A I DM Pulsed Drain Current A P D Power Dissipation T A = 25 W R θ JA Thermal Resistance, Junction to Ambient 125 T J , T STG Operating and Storage Temperature Range 55 to +150 DMG3402LQ DMG3402LQ
Rev : 01.07.2021 2/ www.leiditech.com Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol Parameter Test Condition Min. Typ. Max. Units V (BR)DSS Drain Source Breakdown Voltage V GS =0V, I D =250μ A V I DSS Zero Gate Voltage Drain Current V DS =30V, V GS =0V, 1.0 μ A I GSS Gate to Body Leakage Current V DS =0V, V GS = ±20V ±100 nA V GS(th) Gate Threshold Voltage V DS GS , I D =250μ A 1.5 2.5 V R DS(on) Static Drain Source on Resistance note2 V GS =10V, I D =4A m Ω V GS =4.5V, I D =3A C iss Input Capacitance V DS =15V, V GS =0V, f=1.0MHz 233 pF C oss Output Capacitance pF Crss Reverse Transfer Capacitance pF Q g Total Gate Charge VDS=15V, ID=2A, VGS=10V nC Qgs Gate Source Charge 0.5 nC Qgd Gate Drain( Miller Charge 0.8 nC td(on) Turn on Delay Time VDS=15V, ID=4A, RGEN=3Ω, VGS=10V ns tr Turn on Rise Time 2.1 ns td(off) Turn off Delay Time ns tf Turn off Fall Time 3.2 ns IS Maximum Continuous Drain to Source Diode Forward Current A ISM Maximum Pulsed Drain to Source Diode Forward Current A V SD Drain to Source Diode Forward Voltage V GS =0V, I S =4A 1.2 V Note : 1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3、The power dissipation is limited by 150℃ junction temperature 4、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. DMG3402LQ
Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : 01.07.2021 / www.leiditech.com 5 5 Package Mechanical Data:SOT-23 Symbol Dimensions in Millimeters MIN. MAX. A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 2.250 2.550 e 0.950TYP 1.800 2.000 L 0.550REF 0.300 0.500 θ DMG3402LQ