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Document number: DS35415 Rev. 4 - 3 1 of 7 www.diodes.com November 2017 © Diodes Incorporated NEW PRODUCT DMG2307L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS RDS(ON) max ID max TA = +25° C -30V 90mΩ @ VGS = -10V -3.8A 134mΩ @ VGS = -4.5V -3.1A Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. General Purpose Interfacing Switch Power Management Functions Load Switch for Portable Devices Features and Benefits Low On-Resistance Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 standards for High Reliability PPAP Capable (Note 4) Mechanical Data Case: SOT23 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.08 grams (Approximate) Ordering Information (Note 5) Part Number Compliance Case Packaging DMG2307L-7 Standard SOT23 3000Tape & Reel DMG2307LQ-7 Automotive SOT23 3000Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC -Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to https://www.diodes.com/quality/product-compliance-definitions/. 5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information Date Code Key Year 2009 … 2017 2018 2019 2020 2021 2022 2023 2024 Code W … E F G H I J K L Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D G24 = Product Type Marking Code YM = Date Code Marking Y or = Year (ex: E = 2017) M = Month (ex: 9 = September) NOT RECOMMENDED FOR NEW DESIGN USE DMP3125L Top View Internal Schematic Top View
Document number: DS35415 Rev. 4 - 3 2 of 7 www.diodes.com November 2017 © Diodes Incorporated NEW PRODUCT DMG2307L Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 6) VGS = -10V Steady State TA = +25°C TA = +70°C ID -2.5 -2.0 A Continuous Drain Current (Note 7) VGS = -10V Steady State TA = +25°C TA = +70°C ID -3.8 -3.0 A Continuous Drain Current (Note 7) VGS = -10V t ≦10sec TA = +25°C TA = +70°C ID -4.6 -3.6 A Continuous Drain Current (Note 7) VGS = -4.5V Steady State TA = +25°C TA = +70°C ID -3.1 -2.5 A Pulsed Drain Current (Note 7) IDM -20 A Thermal Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 6) PD 0.76 W Thermal Resistance, Junction to Ambient (Note 6) RθJA 159 ° C/W Total Power Dissipation (Note 7) PD 1.36 W Thermal Resistance, Junction to Ambient (Note 7) RθJA 94 ° C/W Total Power Dissipation (Note 7) t ≦ 10sec PD 1.9 W Thermal Resistance, Junction to Ambient (Note 7) t ≦ 10sec RθJA 65.8 ° C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS -30 V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current @TC = +25° C IDSS -1.0 μA VDS = -30V, VGS = 0V Gate-Source Leakage IGSS ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(TH) -1.0 -3.0 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS(ON) 70 90 mΩ VGS = -10V, ID = -2.5A 105 134 VGS = -4.5V, ID = -2.5A Forward Transfer Admittance |Yfs| 4.8 S VDS = -10V, ID = -2.5A Diode Forward Voltage (Note 7) VSD -0.75 -1.0 V VGS = 0V, IS = -1A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss 371.3 pF VDS = -15V, VGS = 0V, f = 1.0MHz Output Capacitance Coss 51.3 pF Reverse Transfer Capacitance Crss 45.9 pF Gate Resistance Rg 17 Ω VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge (VGS = -4.5V) Qg 4.0 nC VGS = -10V, VDS = -15V, ID = -3A Total Gate Charge (VGS = -10V) Qg 8.2 nC Gate-Source Charge Qgs 0.9 nC Gate-Drain Charge Qgd 1.2 nC Turn-On Delay Time tD(ON) 4.8 ns VDS = -15V, VGS = -10V, RL = 15Ω, RG = 6Ω, ID = -1A Turn-On Rise Time tR 7.3 ns Turn-Off Delay Time tD(OFF) 22.4 ns Turn-Off Fall Time tF 13.4 ns Notes: 6. Device mounted on FR-4 PCB, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate . 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. NOT RECOMMENDED FOR NEW DESIGN USE DMP3125L
Document number: DS35415 Rev. 4 - 3 3 of 7 www.diodes.com November 2017 © Diodes Incorporated NEW PRODUCT DMG2307L -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE(C) J Fig. 6 On-Resistance Variation with Temperature R D R A I N - S O U R C E O N - R E S I S T A N C E ( D S ( O N ) V =-10V I =-2.7A GS D V =-4.5V I =-2A GS D 0.04 0.08 0.12 0.16 0.2 -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE(C) J Fig. 5 On-Resistance Variation with Temperature R D R A I N - S O U R C E O N - R E S I S T A N C E ( N o r m a l i z e d ) D S ( O N ) 0.6 0.8 1.2 1.4 1.6 VGS=-4.5V ID=-2A VGS=-10V ID=-2.7A -I , DRAIN SOURCE CURRENT(A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature D R D R A I N - S O U R C E O N - R E S I S T A N C E ( D S ( O N ) V = -4.5V GS 0.04 0.08 0.12 0.16 0.2 0 2 4 6 8 T = -55C A T = 25C A T = 85C A T = 125C A T = 150C A -I , DRAIN SOURCE CURRENT(A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage D R , D R A I N - S O U R C E O N - R E S I S T A N C E ( D S ( O N ) 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0 2 4 6 8 VGS=-2.5V VGS=-4.5V VGS=-10V I D R A I N C U R R E N T ( A ) D T = 150C A T = 125C A T = 85C A T = 25C A T = -55C A V = -5.0V DS -V , GATE SOURCE VOLTAGE(V) Fig. 2 Typical Transfer Characteristics GS -V , DRAIN -SOURCE VOLTAGE(V) Fig. 1 Typical Output Characteristics DS I D R A I N C U R R E N T ( A ) D 0.0 2.0 4.0 6.0 8.0 V =-10V GS V =-4.5V GS V =-4.0V GS V =-3.5V GS V =-3.0V GS V =-2.5V GS V =-2.0V GS -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) NOT RECOMMENDED FOR NEW DESIGN USE DMP3125L
Document number: DS35415 Rev. 4 - 3 4 of 7 www.diodes.com November 2017 © Diodes Incorporated NEW PRODUCT DMG2307L -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (癈 ) Fig. 7 Gate Threshold Variation vs. Ambient Temperature A V , GATE THRESHOLD VOLTAGE(V)GS(TH) 0.4 0.8 1.2 1.6 Q , TOTAL GATE CHARGE (nC) Fig. 11 Gate-Charge Characteristics g V , GATE-SOURCE VOLTAGE (V)GS 0 2 4 6 8 10 0.1 1 10 100 -V , DRAIN-SOURCE VOLTAGE (V) DS Fig. 12 SOA, Safe Operation Area 0.01 0.1 100 - I D R A I N C U R R E N T ( A ) D T = 150C T = 25C Single Pulse J(MAX) A R Limited DS(ON) -I (A) @P =10s D W -I (A) @ DC D -I (A) @P =1s D W -I (A) @P =100ms D W -ID (A) @PW =10ms -ID (A) @PW=100μs -I (A) @ P=10µ s D W -ID (A) @PW=1ms -V , DRAIN-SOURCE VOLTAGE(V) Fig. 10 Typical Drain-Source Leakage Current vs. Voltage DS I L E A K A G E C U R R E N T ( n A ) D S S 0.1 100 1000 10000 0 5 10 15 20 25 30 T =150° C A T =125° C A T =85° C A T =25° C A -V , DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Junction Capacitance DS C , J U N C T I O N C A P A C I T A N C E ( p F ) T C iss C oss C rss 100 1000 0 5 10 15 20 25 30 f = 1MHz I , S O U R C E C U R R E N T ( A ) S -V , SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current SD PW=10μs -VGS(TH), GATE THRESHOLD VOLTAGE (V) ID = -1mA ID = -250μA (°C) -IS, SOURCE CURRENT (A) CT, JUNCTION CAPACITANCE (pF) -IDSS, LEAKAGE CURRENT (nA) -VGS, GATE-SOURCE VOLTAGE (V) VDS=-15V ID=-3A -ID, DRAIN CURRENT (A) NOT RECOMMENDED FOR NEW DESIGN USE DMP3125L
Document number: DS35415 Rev. 4 - 3 5 of 7 www.diodes.com November 2017 © Diodes Incorporated NEW PRODUCT DMG2307L 0.001 0.01 0.1 t1, PULSE DURATION TIMES (sec) Fig. 13 Transient Thermal Resistance R (t)=r(t) * RJA JA R =54 癈 /W Duty Cycle, D=t1/ t2 JA r(t), TRANSIENT THERMAL RESISTANCE r(t) @ D=0.9 r(t) @ D=0.7r(t) @ D=0.5 r(t) @ D=0.3 r(t) @ D=0.1 r(t) @ D=0.05 r(t) @ D=0.02 r(t) @ D=0.01 r(t) @ D=0.005 r(t) @ D=Single Pulse t1, PLUSE DURATION TIME (sec) Fig.13 Transient Thermal Resistance RθJA(t) = r(t) * RθJA RθJA = 54℃/W Duty Cycle, D = t1 / t2 NOT RECOMMENDED FOR NEW DESIGN USE DMP3125L
Document number: DS35415 Rev. 4 - 3 6 of 7 www.diodes.com November 2017 © Diodes Incorporated NEW PRODUCT DMG2307L Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 J K1 K GAUGE PLANE 0.25 H L M All 7° A C B D GF a X Y Y1 C SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0° 8° -- All Dimensions in mm Dimensions Value (in mm) C 2.0 X 0.8 X1 1.35 Y 0.9 Y1 2.9 NOT RECOMMENDED FOR NEW DESIGN USE DMP3125L
Document number: DS35415 Rev. 4 - 3 7 of 7 www.diodes.com November 2017 © Diodes Incorporated NEW PRODUCT DMG2307L IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license unde r its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products d escribed herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diod es Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product name s and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this docum ent is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety -critical, life support devices or systems, notwithstanding any devices - or systems -related information or support that may be provided by Diodes Incorporated. Further, Cust omers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2017, Diodes Incorporated www.diodes.com NOT RECOMMENDED FOR NEW DESIGN USE DMP3125L