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Document number: DS35421 Rev. 3 - 2 1 of 9 www.diodes.com August 2013 © Diodes Incorporated DMG1029SV NEW PRODUCT SOT563 COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device V(BR)DSS R DS(ON) max ID max TA = +25°C Q1 60V 1.7Ω @ VGS = 10V 500mA 3Ω @ VGS = 4.5V 400mA Q2 -60V 4Ω @ VGS = -10V -360mA 6Ω @ VGS = -4.5V -310mA
Description
This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
General Purpose Interfacing Switch Power Management Functions Analog Switch Features and Benefits Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Ultra-Small Surface Mount Package Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Case: SOT563 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.027 grams (approximate) Ordering Information (Note 4 & 5) Part Number Compliance Case Packaging DMG1029SV-7 Standard SOT563 3000/Tape & Reel DMG1029SVQ-7 Automotive SOT563 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directiv e 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more in formation about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 5. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/. Marking Information Date Code Key Year 2009 2010 2011 2012 2013 2014 2015 Code W X Y Z A B C Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Top View Bottom View GA1 YM GA1 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September) Q1 Q2
Document number: DS35421 Rev. 3 - 2 2 of 9 www.diodes.com August 2013 © Diodes Incorporated DMG1029SV NEW PRODUCT Maximum Ratings N-CHANNEL – Q1 (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 7) VGS = 10V Steady State TA = +25°C TA = +70°C ID 500 400 mA t<10s TA = +25°C TA = +70°C ID 620 480 mA Pulsed Drain Current (Note 7) IDM 1000 mA Maximum Ratings P-CHANNEL – Q2 (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS -60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 7) VGS = -10V Steady State TA = +25°C TA = +70°C ID -360 -280 mA t<10s TA = +25°C TA = +70°C ID -410 -320 mA Pulsed Drain Current (Note 7) IDM -650 mA Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 6) TA = +25°C PD 0.45 W TA = +70°C 0.28 Thermal Resistance, Junction to Ambient (Note 6) Steady state RJA 281 °C/W t<10s 210 Total Power Dissipation (Note 7) TA = +25°C PD W TA = +70°C 0.62 Thermal Resistance, Junction to Ambient (Note 7) Steady state RJA 129 °C/W t<10s 97 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
Document number: DS35421 Rev. 3 - 2 3 of 9 www.diodes.com August 2013 © Diodes Incorporated DMG1029SV NEW PRODUCT Electrical Characteristics N-CHANNEL – Q1 (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS 60 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current @TC = +25°C I DSS — — 10 nA VDS =50V, VGS = 0V Gate-Source Leakage IGSS — — ±50 nA VGS = ±5V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(th) 1.0 — 2.5 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) — 1.3 1.7 Ω VGS = 10V, ID = 500mA — 1.5 3 VGS = 4.5V, ID = 200mA Forward Transfer Admittance |Yfs| 80 — — mS VDS = 10V, ID = 200mA Diode Forward Voltage VSD — — 1.4 V VGS = 0V, IS = 115mA DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss — 30 — pF VDS = 25V, VGS = 0V, f = 1.0MHz Output Capacitance Coss — 4.2 — pF Reverse Transfer Capacitance Crss — 2.9 — pF Total Gate Charge Qg — 0.3 — nC VGS = 4.5V, VDS = 10V, ID = 250mA Gate-Source Charge Qgs — 0.2 — nC Gate-Drain Charge Qgd — 0.08 — nC Turn-On Delay Time tD(on) — 3.9 — ns VDD = 30V, VGS = 10V, RG = 25Ω, ID = 200mA Turn-On Rise Time tr — 3.4 — ns Turn-Off Delay Time tD(off) — 15.7 — ns Turn-Off Fall Time tf — 9.9 — ns Electrical Characteristics P-CHANNEL – Q2 (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS -60 — — V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current @TC = +25°C I DSS — — -25 nA VDS = -50V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±5V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(th) -1 — -3.0 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS (ON) — 2.7 4 Ω VGS = -10V, ID = -500mA — 3.2 6 VGS = -4.5V, ID = -200mA Forward Transfer Admittance |Yfs| 50 — — mS VDS = -25V, ID = -100mA Diode Forward Voltage VSD — — -1.4 V VGS = 0V, IS = -115mA DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss — 25 — pF VDS = -25V, VGS = 0V, f = 1.0MHz Output Capacitance Coss — 4.7 — pF Reverse Transfer Capacitance Crss — 2.7 — pF Total Gate Charge Qg — 0.28 — nC VGS = -4.5V, VDS = -10V, ID = -500mA Gate-Source Charge Qgs — 0.14 — nC Gate-Drain Charge Qgd — 0.08 — nC Turn-On Delay Time tD(on) — 5.5 — ns VDD = -30V, VGS = -10V, RG = 50Ω, ID = -270mA Turn-On Rise Time tr — 7.9 — ns Turn-Off Delay Time tD(off) — 10.6 — ns Turn-Off Fall Time tf — 11.6 — ns Notes: 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing.
Document number: DS35421 Rev. 3 - 2 4 of 9 www.diodes.com August 2013 © Diodes Incorporated DMG1029SV NEW PRODUCT N-CHANNEL – Q1 V , DRAIN -SOURCE VOLTAGE(V) Fig. 1 Typical Output Characteristics DS I, D RAIN CURRENT (A)D 0.2 0.4 0.6 0.8 1.0 1.2 1.4 012345 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 V , GATE-SOURCE VOLTAGE (V)GS Fig. 2 Typical Transfer Characteristics 01 23 45 1.0 I, D RAIN CURRENT (A)D T = - 5 5 CA T = 2 5 CA T = 8 5 CA T = 1 2 5 CA T = 1 5 0 CA I , DRAIN SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage D R ,DRAIN-SOURCE ON-RESISTANCE( )DS(ON) 0.1 1.0 I , DRAIN SOURCE CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and T emperature D R , DRAIN-SOURCE ON-RESISTANCE( )DS(ON) 0.1 V = 5.0VGS T = - 5 5 CA T = 2 5 CA T = 8 5 CA T = 1 2 5 CA T = 1 5 0 CA -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)J Fig. 5 On-Resistance Variation with Temperature R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) 0.5 1.5 2.5 1.0 2.0 3.0 V , GATE-SOURCE VOLTAGE (V)GS Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) 04 81 2 1 6 2 0 I =150mAD I =300mAD
Document number: DS35421 Rev. 3 - 2 5 of 9 www.diodes.com August 2013 © Diodes Incorporated DMG1029SV NEW PRODUCT 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 V , SOURCE-DRAIN VOLTAGE (V)SD Fig. 7 Diode Forward Voltage vs. Current 1.0 I, S OURCE CURRENT (A)S T= 2 5 ° CA T = -55°CA T= 8 5 ° CA T = 125°CA T = 150°CA V , DRAIN-SOURCE VOLTAGE (V) Fig. 8 Typical Junction Capacitance DS C , JUNCTION CAPACITANCE (pF)T f = 1MHz 0 5 10 15 20 CISS COSS CRSS
Document number: DS35421 Rev. 3 - 2 6 of 9 www.diodes.com August 2013 © Diodes Incorporated DMG1029SV NEW PRODUCT P-CHANNEL – Q2 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 01 23 45 -V , DRAIN -SOURCE VOLTAGE (V) Fig. 9 Typical Output Characteristics DS -I , D RAIN CURRENT (A)D V= - 2 . 0 VGS V= - 2 . 5 VGS V= - 3 . 0 VGS V= - 4 . 0 VGS V= - 4 . 5 VGS V= - 1 0 VGS 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 012345 -V , GATE-SOURCE VOLTAGE (V) GS Fig. 10 Typical Transfer Characteristics -I , D RAIN CURRENT (A)D T = 1 5 0 CA T = 1 2 5 CA T = 8 5 CA T = 2 5 CA T = - 5 5 CA V = -5.0VDS -I , DRAIN SOURCE CURRENT (A) Fig. 11 Typical On-Resistance vs. Drain Current and Gate Voltage D R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) V = - 4 . 5 VGS V = - 1 0 VGS V = - 2 . 5 VGS 0 2 4 6 8 1 01 21 41 61 82 0 V , GATE-SOURCE VOLTAGE (V)GS Fig. 12 Typical Drain-Source On-Resistance vs. Gate-Source Voltage R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) I = 100mAD -I , DRAIN SOURCE CURRENT (A) Fig. 13 Typical On-Resistance vs. Drain Current and T emperature D R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) T = - 5 5 CA T = 2 5 CA T = 8 5 CA T = 125 CA T = 150 CA V = -4.5VGS 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 2.0 1.0 -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C) J Fig. 14 On-Resistance Variation with Temperature R , DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) DS(ON) V = -10V I = -500mA GS D V = - 5 . 0 V I = -500mA GS D
Document number: DS35421 Rev. 3 - 2 7 of 9 www.diodes.com August 2013 © Diodes Incorporated DMG1029SV NEW PRODUCT -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)J Fig. 15 On-Resistance Variation with Temperature R , DRAIN-SOURCE ON-RESISTANCE ( )DS(on) V= 5 V I= A GS D -500m V= - 1 0 V I= A GS D -500m 0.8 1.2 1.4 1.6 1.8 1.0 2.0 -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C) Fig. 16 Gate Threshold Variation vs. Ambient Temperature A V, GATE THRESHOLD VOLTAGE (V)GS(TH) -I = 1mAD -I = 250µAD 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 -I , S OURCE CURRENT (A)S -V , SOURCE-DRAIN VOLTAGE (V) Fig. 17 Diode Forward Voltage vs. Current SD T= 2 5 CA T= - 5 5 CA T= 8 5 CA T= 1 2 5 CA T= 1 5 0 CA 100 0 5 10 15 20 25 30 35 40 C , JUNCTION CAPACITANCE (pF)T -V , DRAIN-SOURCE VOLTAGE (V) Fig. 18 Typical Junction Capacitance DS Coss Crss f = 1MHz Ciss 10-V , GATE-SOURCE VOLTAGE (V)GS Q , TOTAL GATE CHARGE (nC) Fig. 19 Gate-Charge Characteristics g V = -10V I = -500mA DS D
Document number: DS35421 Rev. 3 - 2 8 of 9 www.diodes.com August 2013 © Diodes Incorporated DMG1029SV NEW PRODUCT Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version. SOT563 Dim Min Max Typ A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D - - 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.55 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 0.11 All Dimensions in mm Dimensions Value (in mm) Z 2.2 G 1.2 X 0.375 Y 0.5 C1 1.7 C2 0.5 X Z Y C2C2 G A M L B C H K G D
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