DMG1026UV

Document overview

  • Manufacturer or author: Diodes Incorporated
  • PDF pages: 8

Technical content

Document number: DS35068 Rev. 10 - 2 1 of 8 www.diodes.com November 2025 © 2025 Copyright Diodes Incorporated. All Rights Reserved. DMG1026UV 60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS RDS(ON) ID TA = +25° C 60V 1.8Ω @ VGS = 10V 440mA 2.1Ω @ VGS = 4.5V 410mA Description and Applications This new generation MOSFET is designed to minimize the on -state resistance (R DS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

  • Battery-operated systems and solid-state relays
  • Drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc.
  • DC-DC converters
  • Power-management functions Features and Benefits
  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/
  • An automotive-compliant part is available under a separate datasheet (DMG1026UVQ) Mechanical Data
  • Package: SOT563
  • Package Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208
  • Terminal Connections: See Diagram Below
  • Weight: 0.006 grams (Approximate) Ordering Information (Note 4) Orderable Part Number Package Packing Qty. Carrier DMG1026UV-7 SOT563 3,000 Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. SOT563 Top View Top View Pin Definition Bottom View ESD PROTECTED TO 2kV Gate Protection Diode Gate Protection Diode Equivalent Circuit Q1 N-CHANNEL Q2 N-CHANNEL

Document number: DS35068 Rev. 10 - 2 2 of 8 www.diodes.com November 2025 © 2025 Copyright Diodes Incorporated. All Rights Reserved. DMG1026UV Marking Information (Note 5) Date Code Key Year 2011 - 2025 2026 2027 2028 2029 2030 2031 2032 2033 2034 Code Y - M N P R S T U V W X Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Note: 5. Products manufactured with date code D9 (September, 2016) and newer are built with additional Pin 1 dot in marking information. Products manufactured prior to date code D9 are built without Pin 1 dot. Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25° C TA = +85° C ID 410 300 mA Continuous Drain Current (Note 7) VGS = 10V t ≤ 10s TA = +25° C TA = +85° C ID 440 320 mA Continuous Drain Current (Note 6) VGS = 4.5V Steady State TA = +25° C TA = +85° C ID 380 270 mA Continuous Drain Current (Note 7) VGS = 4.5V t ≤ 10s TA = +25° C TA = +85° C ID 410 295 mA Pulsed Drain Current (Note 8) IDM 1.0 A Thermal Characteristics Characteristic Symbol Max Unit Power Dissipation (Note 6) PD 0.58 W Thermal Resistance, Junction to Ambient @TA = +25° C (Note 6) RθJA 213 ° C/W Power Dissipation (Note 7) t ≤ 10s PD 0.65 W Thermal Resistance, Junction to Ambient @TA = +25° C (Note 7) t ≤ 10s RθJA 192 ° C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 6. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 PCB with minimum recommended pad layout, measured in t ≤ 10s. 8. Repetitive rating, pulse width limited by junction temperature, 10 µs pulse, duty cycle = 1%. UA1 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: M = 2025) M = Month (ex: 9 = September) SOT563 UA1 YM 1 2 3 6 5 4

Document number: DS35068 Rev. 10 - 2 3 of 8 www.diodes.com November 2025 © 2025 Copyright Diodes Incorporated. All Rights Reserved. DMG1026UV Electrical Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BVDSS 60 — — V VGS = 0, ID = 250μA Zero Gate Voltage Drain Current TJ = +25° C IDSS — — 1.0 µA VDS = 50V, VGS = 0 Gate-Source Leakage IGSS — — ±50 nA VGS = ±5V, VDS = 0 — — ±150 nA VGS = ±10V, VDS = 0 ON CHARACTERISTICS (Note 9) Gate Threshold Voltage VGS(TH) 0.5 — 1.8 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) — 1.2 1.8 Ω VGS = 10V, ID = 500mA — 1.4 2.1 VGS = 4.5V, ID = 200mA Forward Transfer Admittance |Yfs| 80 580 — mS VDS = 10V, ID = 200mA Continuous Source Current (Note 9) IS — — 200 mA — Diode Forward Voltage VSD — 0.8 1.3 V VGS = 0, IS = 200mA DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Ciss — 32 — pF VDS = 25V, VGS = 0 f = 1.0MHz Output Capacitance Coss — 4.4 — Reverse Transfer Capacitance Crss — 2.9 — Gate Resistance Rg — 126 — Ω VDS = 0, VGS = 0, f = 1MHz Total Gate Charge Qg — 0.45 — nC VGS = 4.5V, VDS = 10V ID = 250mA Gate-Source Charge Qgs — 0.08 — Gate-Drain Charge Qgd — 0.08 — Turn-On Delay Time tD(ON) — 3.4 — ns VGS = 10V, VDS = 30V RL = 150Ω, Rg = 25Ω ID = 200mA Turn-On Rise Time tR — 3.4 — ns Turn-Off Delay Time tD(OFF) — 26.4 — ns Turn-Off Fall Time tF — 16.3 — ns Notes: 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to production testing.

Document number: DS35068 Rev. 10 - 2 6 of 8 www.diodes.com November 2025 © 2025 Copyright Diodes Incorporated. All Rights Reserved. DMG1026UV 0.001 0.01 0.1 1 10 100 1,000 Figure 13 Transient Thermal Response t , PULSE DURATION TIME (s)1 0.000001 0.00010.00001 0.001 0.01 0.1 r(t), TRANSIENT THERMAL RESISTANCE T - T = P * R (t) Duty Cycle, D = t /t J A JA R (t) = r(t) * JA R R = 220 癈 /W JA JA P(pk) D = 0.7 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 D = Single Pulse D = 0.9 D = 0.5 220°C/W

Document number: DS35068 Rev. 10 - 2 7 of 8 www.diodes.com November 2025 © 2025 Copyright Diodes Incorporated. All Rights Reserved. DMG1026UV Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT563 b E1E e D A c L R.01 a aa a SOT563 Dim Min Max Typ A 0.55 0.60 -- b 0.15 0.30 0.20 c 0.10 0.18 0.11 D 1.50 1.70 1.60 E 1.55 1.70 1.60 E1 1.10 1.25 1.20 e -- -- 0.50 e1 0.90 1.10 1.00 L 0.10 0.30 0.20 a 8° 9° 7° All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT563 Y C G X Dimensions Value (in mm) C 0.500 C1 1.270 G 0.600 X 0.300 X1 1.300 Y 0.670 Y1 1.940

Document number: DS35068 Rev. 10 - 2 8 of 8 www.diodes.com November 2025 © 2025 Copyright Diodes Incorporated. All Rights Reserved. DMG1026UV IMPORTANT NOTICE 1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes ’ products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who d esign with Diodes’ products. Diodes’ products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of Diodes’ products for their intended applications, (c) ensuring their applications, which incorporate Diodes’ products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality co ntrol techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associ ated with their applications. 3. Diodes assumes no liability for any application -related information, support, assistance or feedback that may be provided by Diodes from time to time. 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