DMG1016VQ

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Manufacturer or author: Diodes Incorporated
PDF pages: 9

Technical content

Features

 Low On-Resistance  Low Gate Threshold Voltage VGS(TH) < 1V  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Complementary Pair MOSFET  Ultra-Small Surface Mount Package  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DIODES™ DMG1016VQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/ Mechanical Data  Package: SOT563  Package Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections: See Diagram  Terminal Finish – Matte Tin Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208  Weight: 0.006 grams (Approximate) Ordering Information (Note 4) Part Number Package Packing Qty. Carrier DMG1016VQ-7 SOT563 3,000 Tape & Reel DMG1016VQ-13 SOT563 10,000 Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. SOT563 Top View Top View Internal Schematic Bottom View Q1 Q2 ESD PROTECTED NOT RECOMMENDED FOR NEW DESIGN CONTACT US

Document number: DS37972 Rev. 4 - 3 2 of 9 www.diodes.com August 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. DMG1016VQ Marking Information Date Code Key Year 2015 …. 2022 2023 2024 2025 2026 2027 2028 2029 2030 2031 Code C …. J K L M N O P R S T Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Maximum Ratings (Q1 N-Channel) (@ TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±6 V Drain Current (Note 5) TA = +25°C TA = +85°C ID 870 630 mA Maximum Ratings (Q2 P-Channel) (@ TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±6 V Drain Current (Note 5) TA = +25°C TA = +85°C ID -640 -460 mA Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) PD 530 mW Thermal Resistance, Junction to Ambient (Note 5) RθJA 235 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Note: 5. Device mounted on FR-4 PCB. CA1 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: J = 2022) M = Month (ex: 9 = September) CA1 YM

Document number: DS37972 Rev. 4 - 3 3 of 9 www.diodes.com August 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. DMG1016VQ Electrical Characteristics (Q1 N-Channel) (@ TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BVDSS 20 — — V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS — — 100 nA VDS = 20V, VGS = 0V Gate-Source Leakage IGSS — — ±1.0 µA VGS = ±4.5V, VDS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(TH) 0.5 — 1.0 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance RDS(ON) 0.3 0.4 0.5 0.4 0.5 0.7 Ω VGS = 4.5V, ID = 600mA VGS = 2.5V, ID = 500mA VGS = 1.8V, ID = 350mA Forward Transfer Admittance |Yfs| — 1.4 — S VDS =10V, ID = 400mA Diode Forward Voltage (Note 6) VSD — 0.7 1.2 V VGS = 0V, IS = 150mA DYNAMIC CHARACTERISTICS Input Capacitance Ciss — 60.67 — pF VDS = 16V, VGS = 0V f = 1.0MHz Output Capacitance Coss — 9.68 — pF Reverse Transfer Capacitance Crss — 5.37 — pF Total Gate Charge Qg — 736.6 — pC VGS = 4.5V, VDS = 10V ID = 250mA Gate-Source Charge Qgs — 93.6 — Gate-Drain Charge Qgd — 116.6 — Turn-On Delay Time tD(ON) — 5.1 — ns VDD = 10V, VGS = 4.5V RL = 47Ω,RG = 10Ω ID = 200mA Turn-On Rise Time tR — 7.4 — Turn-Off Delay Time tD(OFF) — 26.7 — Turn-Off Fall Time tF — 12.3 — Electrical Characteristics (Q2 P-Channel) (@ TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BVDSS -20 — — V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS — — -100 nA VDS = -20V, VGS = 0V Gate-Source Leakage IGSS — — ±2.0 µA VGS = ±4.5V, VDS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(TH) -0.5 — -1.0 V VDS = VGS, ID = -250µA Static Drain-Source On-Resistance RDS(ON) 0.5 0.7 1.0 0.7 0.9 1.3 Ω VGS = -4.5V, ID = -430mA VGS = -2.5V, ID = -300mA VGS = -1.8V, ID = -150mA Forward Transfer Admittance |Yfs| — -0.9 — S VDS =10V, ID = -250mA Diode Forward Voltage (Note 6) VSD — -0.8 -1.2 V VGS = 0V, IS = -150mA DYNAMIC CHARACTERISTICS Input Capacitance Ciss — 59.76 — pF VDS = -16V, VGS = 0V f = 1.0MHz Output Capacitance Coss — 12.07 — pF Reverse Transfer Capacitance Crss — 6.36 — pF Total Gate Charge Qg — 622.4 — pC VGS = -4.5V, VDS = -10V ID = -250mA Gate-Source Charge Qgs — 100.3 — Gate-Drain Charge Qgd — 132.2 — Turn-On Delay Time tD(ON) — 5.1 — ns VDD = -10V, VGS = -4.5V RL = 47Ω,RG = 10Ω ID = -200mA Turn-On Rise Time tR — 8.1 — Turn-Off Delay Time tD(OFF) — 28.4 — Turn-Off Fall Time tF — 20.7 — Note: 6. Short duration pulse test used to minimize self-heating effect.

Document number: DS37972 Rev. 4 - 3 4 of 9 www.diodes.com August 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. DMG1016VQ Typical Characteristics (Q1 N-Channel) 0.2 0.4 0.6 0.8 1.0 Fig. 1 Typical Output Characteristic V , DRAIN-SOURCE VOLTAGE (V)DS I , DRAIN CURRENT (A)D V = 1.5VGS V = 2.0VGS V = 2.5VGS V = 3.0VGS V = 1.2VGS V = 4.5VGS V = 8.0VGS 0.2 0.4 0.6 0.8 1.0 0 0.5 1 1.5 2 Fig. 2 Typical Transfer Characteristic V , GATE-SOURCE VOLTAGE (V)GS I , DRAIN CURRENT (A)D T = -55 蚓A T = 25 蚓A T = 85 蚓AT = 125 蚓A T = 150 蚓A 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage I , DRAIN-SOURCE CURRENT (A)D R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON)  V = 4.5VGS V = 2.5VGS V = 1.8VGS 0.1 0.2 0.3 0.4 0.5 I , DRAIN CURRENT (A)D Fig. 4 Typical On-Resistance vs. Drain Current and Temperature R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON)  T = -55 蚓A T = 25 蚓A T = 85 蚓A T = 125 蚓A T = 150 蚓A 0.5 0.7 0.9 1.1 1.3 1.5 1.7 Fig. 5 On-Resistance Variation with Temperature -50 -25 0 V = 2.5V I = 250mA GS D 25 50 75 100 125 150 T , AMBIENT TEMPERATURE ( 蚓)A R , DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) DSON V = 4.5V I = 500mA GS D 0.2 0.4 0.6 0.8 Fig. 6 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE ( 蚓)A R , DRAIN-SOURCE ON-RESISTANCE ( ) DSON V = 4.5V I = 500mA GS D V = 2.5V I = 250mA GS D TA = 85°C TA = 150°C TA = 25°C TA = 125°C TA = -55°C TA = 85°C TA = 150°C TA = 25°C TA = 125°C TA = -55°C (°C) (°C) RDS(ON), RDS(ON),

Document number: DS37972 Rev. 4 - 3 5 of 9 www.diodes.com August 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. DMG1016VQ Typical Characteristics (Q1 N-Channel) (continued) 0.4 0.8 1.2 1.6 Fig. 7 Gate Threshold Variation vs. Ambient Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE ( 蚓)A V , GATE THRESHOLD VOLTAGE (V)GS(TH) I = 1mAD I = 250 渙D 0.2 0.4 0.6 0.8 1.0 Fig. 8 Diode Forward Voltage vs. Current V , SOURCE-DRAIN VOLTAGE (V)SD I , SOURCE CURRENT (A)S T = 25 蚓A 100 0 20 Fig. 9 Typical Total Capacitance V , DRAIN-SOURCE VOLTAGE (V)DS 5 1510 C, CAPACITANCE (pF) Ciss Crss Coss 100 1,000 0 4 8 12 16 20 Fig. 10 Typical Leakage Current vs. Drain-Source Voltage V , DRAIN-SOURCE VOLTAGE (V) DS I , LEAKAGE CURRENT (nA) DSS T = 25 蚓A T = 85 蚓A T = 125 蚓A T = 150 蚓A Fig. 11 Transient Thermal Response t , PULSE DURATION TIME (s)1 0.001 0.01 0.1 r(t), TRANSIENT THERMAL RESISTANCE T - T = P * R (t) Duty Cycle, D = t /t J A JA R (t) = r(t) * JA R R = 260 蚓/W JA JA P(pk) D = 0.7 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 D = Single Pulse D = 0.9 D = 0.5 (°C) 260°C/W ID = 250μA TA = 85°C TA = 150°C TA = 25°C TA = 125°C TA = 25°C

Document number: DS37972 Rev. 4 - 3 6 of 9 www.diodes.com August 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. DMG1016VQ Typical Characteristics (Q2 P-Channel) 0.2 0.4 0.6 0.8 1.0 Fig. 12 Typical Output Characteristic -V , DRAIN-SOURCE VOLTAGE (V)DS V = -2.0VGS V = -4.5VGS V = -3.0VGS V = -1.5VGS V = -8.0VGS V = -2.5VGS 0.2 0.4 0.6 0.8 1.0 Fig. 13 Typical Transfer Characteristic -V , GATE-SOURCE VOLTAGE (V)GS -I , DRAIN CURRENT (A)D T = -55 蚓A T = 25 蚓A T = 85 蚓AT = 125 蚓A T = 150 蚓A V = -5VDS 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Fig. 14 Typical On-Resistance vs. Drain Current and Gate Voltage -I , DRAIN-SOURCE CURRENT (A)D R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON)  V = -4.5VGS V = -2.5VGS V = -1.8VGS 0.2 0.4 0.6 0.8 1.0 -I , DRAIN CURRENT (A)D Fig. 15 Typical On-Resistance vs. Drain Current and Temperature R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON)  T = -55 蚓A T = 25 蚓A T = 85 蚓A T = 125 蚓A T = 150 蚓A V = -4.5VGS 0.5 0.7 0.9 1.1 1.3 1.5 1.7 Fig. 16 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE ( 蚓)A R , DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) DSON V = -4.5V I = -500mA GS D V = -2.5V I = -250mA GS D 0.2 0.4 0.6 0.8 1.0 Fig. 17 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE ( 蚓)A R , DRAIN-SOURCE ON-RESISTANCE ( )DSON  V = -4.5V I = -500mA GS D V = -2.5V I = -250mA GS D (°C) (°C) TA = 85°C TA = 150°C TA = 25°C TA = 125°C TA = -55°C TA = 85°C TA = 150°C TA = 25°C TA = 125°C TA = -55°C RDS(ON), RDS(ON),

Document number: DS37972 Rev. 4 - 3 7 of 9 www.diodes.com August 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. DMG1016VQ Typical Characteristics (Q2 P-Channel) (continued) 0.4 0.8 1.2 1.6 Fig. 18 Gate Threshold Variation vs. Ambient Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE ( 蚓)A -V , GATE THRESHOLD VOLTAGE (V)GS(TH) I = -250 渙D I = -1mAD 0.2 0.4 0.6 0.8 1.0 Fig. 19 Diode Forward Voltage vs. Current -V , SOURCE-DRAIN VOLTAGE (V)SD -I , SOURCE CURRENT (A)S T = 25 蚓A 100 0 5 10 15 20 Fig. 20 Typical Total Capacitance -V , DRAIN-SOURCE VOLTAGE (V)DS C, CAPACITANCE (pF) Ciss Crss Coss 0 4 8 12 16 20 Fig. 21 Typical Leakage Current vs. Drain-Source Voltage -V , DRAIN-SOURCE VOLTAGE (V) DS -I , LEAKAGE CURRENT (nA) DSS 100 1,000 T = 25 蚓A T = 85 蚓A T = 125 蚓A T = 150 蚓A 0.00001 0.001 0.01 0.1 1 10 100 1,000 Fig. 22 Transient Thermal Response t , PULSE DURATION TIME (s)1 0.0001 0.001 0.01 0.1 r(t), TRANSIENT THERMAL RESISTANCE T - T = P * R (t) Duty Cycle, D = t /t J A JA R (t) = r(t) * JA R R = 260 蚓/W JA JA P(pk) D = 0.7 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 D = Single Pulse D = 0.9 D = 0.5 (°C) 260°C/W ID = 250μA TA = 25°C TA = 85°C TA = 150°C TA = 25°C TA = 125°C

Document number: DS37972 Rev. 4 - 3 8 of 9 www.diodes.com August 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. DMG1016VQ Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT563 b E1E e D A c L R.01 a aa a SOT563 Dim Min Max Typ A 0.55 0.60 -- b 0.15 0.30 0.20 c 0.10 0.18 0.11 D 1.50 1.70 1.60 E 1.55 1.70 1.60 E1 1.10 1.25 1.20 e -- -- 0.50 e1 0.90 1.10 1.00 L 0.10 0.30 0.20 a 8° 9° 7° All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT563 Y C G X Dimensions Value (in mm) C 0.500 C1 1.270 G 0.600 X 0.300 X1 1.300 Y 0.670 Y1 1.940

Document number: DS37972 Rev. 4 - 3 9 of 9 www.diodes.com August 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. DMG1016VQ IMPORTANT NOTICE 1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMP LIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes ’ products described herein and application examples. Diodes does not assume any lia bility arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who d esign with Diodes’ products. Diodes’ products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of Diodes’ products for their intended applications, (c) ensuring their applications, which incorporate Diodes’ products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including t esting, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associ ated with their applications. 3. Diodes assumes no liability for any application -related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all com panies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities. 4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademar ks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of an y third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document. 5. Diodes’ products are provided subject to Diodes’ Standard Terms and Conditions of Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/) or other applicable terms. This document does not alter or expand the applic able warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 6. Diodes’ products and technology may not be used for or incorporated into any produ cts or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes’ products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives a nd agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this docume nt is error-free and Diodes is under no ob ligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any produ ct descr ibed herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 8. Any unauthorized copying, modification, di stribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising f rom any such unauthorized use. 9. This Notice may be periodically updated with the most recent version available at https://www.diodes.com/about/company/terms-and- conditions/important-notice DIODES is a trademark of Diodes Incorporated in the United States and other countries. The Diodes logo is a registered trademark of Diodes Incorporated in the United States and other countries. © 2022 Diodes Incorporated. All Rights Reserved. www.diodes.com

Product Information

DMG1016VQ specifications and overview.

Summary

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Rev 2

Description

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Rev 2

Source title DMG1016VQ Datasheet(PDF) - Diodes Incorporated

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