DMG1013UWQ
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 7
Technical content
Features
- Low On-Resistance
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- ESD Protected
- Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- The DMG1013UWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/ Mechanical Data
- Case: SOT323
- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Connections: See Diagram Below
- Terminals: Finish - Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208
- Weight: 0.006 grams (Approximate) Ordering Information (Note 4) Part Number Case Packaging DMG1013UWQ-7 SOT323 3000 / Tape & Reel DMG1013UWQ-13 SOT323 10000 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Hal ogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information Date Code Key Year 2008 …… 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030 Code V …… I J K L M N O P R S Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D ESD PROTECTED Equivalent Circuit Top View Top View Source Gate Protection Diode Gate Drain G S D PA1 = Product Type Marking Code YM or YM = Date Code Marking Y or Y= Year (ex: I = 2021) M = Month (ex: 9 = September) PA1 YM
Document number: DS38559 Rev. 2 - 2 2 of 7 www.diodes.com June 2021 © Diodes Incorporated DMG1013UWQ Maximum Ratings (@ TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±6 V Continuous Drain Current (Note 5) Steady State TA = +25°C TA = +85°C ID -0.82 -0.54 A Pulsed Drain Current (Note 6) IDM -3 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) PD 0.31 W Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) RθJA 398 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Repetitive rating, pulse width limited by junction temperature. Electrical Characteristics (@ TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS -20 - - V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current TJ = +25°C IDSS - - -100 nA VDS = -20V, VGS = 0V Gate-Source Leakage IGSS - - ±2.0 μA VGS = ±4.5V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) -0.5 - -1.0 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS(ON) - 0.5 0.7 1.0 0.75 1.05 1.5 Ω VGS = -4.5V, ID = -430mA VGS = -2.5V, ID = -300mA VGS = -1.8V, ID = -150mA Forward Transfer Admittance |Yfs| - 0.9 - S VDS = -10V, ID = -250mA Diode Forward Voltage VSD -0.8 -1.2 V VGS = 0V, IS = -150mA DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss - 59.76 - pF VDS = -16V, VGS = 0V, f = 1.0MHz Output Capacitance Coss - 12.07 - pF Reverse Transfer Capacitance Crss - 6.36 - pF Total Gate Charge Qg - 622.4 - pC VGS = -4.5V, VDS = -10V, ID = -250mA Gate-Source Charge Qgs - 100.3 - pC Gate-Drain Charge Qgd - 132.2 - pC Turn-On Delay Time tD(ON) - 5.1 - ns VDD = -10V, VGS = -4.5V, RL = 47Ω, RG = 10Ω, ID = -200mA Turn-On Rise Time tR - 8.1 - ns Turn-Off Delay Time tD(OFF) - 28.4 - ns Turn-Off Fall Time tF - 20.7 - ns Notes: 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing.
Figure 12. Transient Thermal Resistance
Document number: DS38559 Rev. 2 - 2 6 of 7 www.diodes.com June 2021 © Diodes Incorporated DMG1013UWQ Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT323 Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT323 SOT323 Dim Min Max Typ A1 0.00 0.10 0.05 A2 0.90 1.00 0.95 b 0.25 0.40 0.30 c 0.10 0.18 0.11 D 1.80 2.20 2.15 E 2.00 2.20 2.10 E1 1.15 1.35 1.30 e 0.650 BSC e1 1.20 1.40 1.30 F 0.375 0.475 0.425 L 0.25 0.40 0.30 a 8° All Dimensions in mm Dimensions Value (in mm) C 0.650 G 1.300 X 0.470 Y 0.600 Y1 2.500 a E1E F e1 b L c e D Y1 G Y X C
Document number: DS38559 Rev. 2 - 2 7 of 7 www.diodes.com June 2021 © Diodes Incorporated DMG1013UWQ IMPORTANT NOTICE 1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTIC ULAR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operati on of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engi neering customers and users who design with Diodes products. Diodes products may be used to facilitate safety -related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functional -safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risk s associated with their applications. 3. Diodes assumes no liability for any application- related information, support, assistance or feedback that may be provided by Diodes from time to time. 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