DMG1012UWQ DIODES | Alldatasheet
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Document number: DS42474 Rev. 3 - 2 1 of 7 www.diodes.com September 2020 © Diodes Incorporated DMG1012UWQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS RDS(ON) Max ID Max TA = +25° C 20V 0.45Ω @ VGS = 4.5V 0.95A 0.6Ω @ VGS = 2.5V 0.82A 0.75Ω @ VGS = 1.8V 0.73A Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. General Purpose Interfacing Switch Power Management Functions DC-DC Converters Analog Switch Features and Benefits Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The DMG1012UWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/ Mechanical Data Case: SOT323 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.027 grams (Approximate) Ordering Information (Note 4) Part Number Case Packaging DMG1012UWQ-7 SOT323 3000 / Tape & Reel DMG1012UWQ-13 SOT323 10000 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Hal ogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information Date Code Key Year 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030 2031 Code H I J K L M N O P R S T Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D G S D Top View Top View BE2 = Product Type Marking Code Y̅M = Date Code Marking Y̅ = Year (ex: H = 2020) M = Month (ex: 9 = September) ESD PROTECTED Equivalent Circuit D S G
Document number: DS42474 Rev. 3 - 2 2 of 7 www.diodes.com September 2020 © Diodes Incorporated DMG1012UWQ Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±6 V Continuous Drain Current (Note 6) VGS = 4.5V Steady State TA = +25° C TA = +85° C ID 0.95 0.75 A Pulsed Drain Current (10µ s Pulse, Duty Cycle=1%) IDM 6 A Maximum Body Diode Forward Current (Note 5) IS 0.58 A Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) PD 0.46 W Thermal Resistance, Junction to Ambient (Note 5) Steady State RJA 269 ° C/W Total Power Dissipation (Note 6) PD 0.61 W Thermal Resistance, Junction to Ambient (Note 6) Steady State RJA 205 ° C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 20 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current TJ = +25° C IDSS — — 100 nA VDS = 20V, VGS = 0V Gate-Source Leakage IGSS — — ±1.0 μA VGS = ±4.5V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) 0.5 — 1.0 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) — 0.13 0.45 Ω VGS = 4.5V, ID = 600mA 0.16 0.6 VGS = 2.5V, ID = 500mA 0.21 0.75 VGS = 1.8V, ID = 350mA Diode Forward Voltage VSD — 0.7 1.2 V VGS = 0V, IS = 150mA DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss — 43 — pF VDS = 16V, VGS = 0V, f = 1.0MHz Output Capacitance Coss — 12 — pF Reverse Transfer Capacitance Crss — 7 — pF Total Gate Charge Qg — 1.0 — nC VGS = 4.5V, VDS = 10V, ID = 250mA Gate-Source Charge Qgs — 0.2 — nC Gate-Drain Charge Qgd — 0.1 — nC Turn-On Delay Time tD(ON) — 5.2 — ns VDD = 10V, VGS = 4.5V, RL = 47Ω, RG = 10Ω, ID = 200mA Turn-On Rise Time tR — 2.1 — ns Turn-Off Delay Time tD(OFF) — 452 — ns Turn-Off Fall Time tF — 239 — ns Notes: 5. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout . 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing.
Figure 13. Transient Thermal Resistance
Document number: DS42474 Rev. 3 - 2 6 of 7 www.diodes.com September 2020 © Diodes Incorporated DMG1012UWQ Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT323 SOT323 Dim Min Max Typ A1 0.00 0.10 0.05 A2 0.90 1.00 0.95 b 0.25 0.40 0.30 c 0.10 0.18 0.11 D 1.80 2.20 2.15 E 2.00 2.20 2.10 E1 1.15 1.35 1.30 e 0.650 BSC e1 1.20 1.40 1.30 F 0.375 0.475 0.425 L 0.25 0.40 0.30 a 0° 8° -- All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT323 Dimensions Value (in mm) C 0.650 G 1.300 X 0.470 Y 0.600 Y1 2.500 a E1E F e1 b L c e D Y1 G Y X C
Document number: DS42474 Rev. 3 - 2 7 of 7 www.diodes.com September 2020 © Diodes Incorporated DMG1012UWQ IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license unde r its patent or trademark rights, nor the rights of others. Any Customer or user of th is document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diod es Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, internation al or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into mul tiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems witho ut the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety -critical, life support devices or systems, notwithstanding any devices - or systems -related information or support that may be pr ovided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2020, Diodes Incorporated www.diodes.com