DMG1012UW

DMG1012UW

Document overview

• Manufacturer or author: Diodes Incorporated
• PDF pages: 6

Technical content

Features

• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• ESD Protected Up To 2kV
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Mechanical Data
• Case: SOT323
• Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram Below
• Terminals: Finish ⎯ Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208
• Weight: 0.006 grams (Approximate) Ordering Information (Note 4) Part Number Case Packaging DMG1012UW-7 SOT323 3000 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information Date Code Key Year 2009 …… 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030 Code W …… I J K L M N O P R S Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D TOP VIEW Source EQUIVALENT CIRCUIT Gate Protection Diode Gate Drain TOP VIEW G S D ESD PROTECTED TO 2kV NA1 = Product Type Marking Code YM = Date Code Marking Y o r Y̅ = Year (ex: I = 2021) M = Month (ex: 9 = September) NA1 YM

Document number: DS31859 Rev. 6 - 2 2 of 6 www.diodes.com July 2021 © Diodes Incorporated DMG1012UW Maximum Ratings (@ TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±6 V Continuous Drain Current (Note 5) Steady State TA = +25°C TA = +85°C ID 1.0 0.64 A Pulsed Drain Current (Note 6) IDM 6 A Thermal Characteristics Characteristic Symbol Max Unit Power Dissipation (Note 5) PD 0.29 W Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) RθJA 425 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Repetitive rating, pulse width limited by junction temperature. Electrical Characteristics (@ TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 20 - - V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current TJ = +25°C IDSS - - 100 nA VDS = 20V, VGS = 0V Gate-Source Leakage IGSS - - ±1.0 μA VGS = ±4.5V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) 0.5 - 1.0 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(on) - 0.3 0.45 Ω VGS = 4.5V, ID = 600mA 0.4 0.6 VGS = 2.5V, ID = 500mA 0.5 0.75 VGS = 1.8V, ID = 350mA Forward Transfer Admittance |Yfs| - 1.4 - S VDS = 10V, ID = 400mA Diode Forward Voltage VSD - 0.7 1.2 V VGS = 0V, IS = 150mA DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss - 60.67 - pF VDS = 16V, VGS = 0V, f = 1.0MHz Output Capacitance Coss - 9.68 - pF Reverse Transfer Capacitance Crss - 5.37 - pF Total Gate Charge Qg - 736.6 - pC VGS = 4.5V, VDS = 10V, ID = 250mA Gate-Source Charge Qgs - 93.6 - pC Gate-Drain Charge Qgd - 116.6 - pC Turn-On Delay Time tD(on) - 5.1 - ns VDD = 10V, VGS = 4.5V, RL = 47Ω, RG = 10Ω, ID = 200mA Turn-On Rise Time tR - 7.4 - ns Turn-Off Delay Time tD(off) - 26.7 - ns Turn-Off Fall Time tF - 12.3 - ns Notes: 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing.

Document number: DS31859 Rev. 6 - 2 3 of 6 www.diodes.com July 2021 © Diodes Incorporated DMG1012UW 0.3 0.6 0.9 1.2 1.5 0 1 2 3 4 5 Fig. 1 Typical Output Characteristics V , DRAIN-SOURCE VOLTAGE (V)DS I , DRAIN CURRENT (A)D V = 1.2VGS V = 1.5VGS V = 2.0VGS V = 2.5VGS V = 3.0VGS V = 4.5VGS V = 8.0VGS 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage I , DRAIN-SOURCE CURRENT (A)D R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) Ω V = 1.8VGS V = 4.5VGS V = 2.5VGS 0.5 0.7 0.9 1.1 1.3 1.5 1.7 Fig. 5 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C)J R , DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) DS(ON) V = 4.5V I = 1.0A GS D V = 2.5V I = 500mA GS D 0.2 0.4 0.6 0.8 Fig. 6 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C)J R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) Ω V = 4.5V I = 1.0A GS D V = 2.5V I = 500mA GS D 0.1 0.2 0.3 0.4 0.5 0.6 I , DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature D R D R A I N - S O U R C E O N - R E S I S T A N C E ( D S ( O N ) Ω T = -55°C A T = 25°C A T = 85°C A T = 125°C A T = 150°C A V = 4.5V GS RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.3 0.6 0.9 1.2 1.5 0 0.5 1 1.5 2 2.5 3 Fig. 2 Typical Transfer Characteristics V , GATE SOURCE VOLTAGE (V) GS I D R A I N C U R R E N T ( A ) D V = 5V DS T = -55°C A T = 25°C A T = 125°C A T = 150°C A T = 85°C A ID, DRAIN CURRENT (A) (°C) (°C)

Document number: DS31859 Rev. 6 - 2 4 of 6 www.diodes.com July 2021 © Diodes Incorporated DMG1012UW 100 0 5 10 15 20 Fig. 9 Typical Capacitance V , DRAIN-SOURCE VOLTAGE (V)DS C, CAPACITANCE (pF) Ciss Coss Crss Fig. 11 Transient Thermal Response t , PULSE DURATION TIME (s)1 0.001 0.01 0.1 r(t), TRANSIENT THERMAL RESISTANCE T - T = P * R (t) Duty Cycle, D = t /t J A JA θ R (t) = r(t) * θJA R R = 486°C/W θ θ JA JA P(pk) D = 0.7 D = 0.5 D = 0.3 D = 0.05 D = 0.02 D = 0.01 D = 0.005 D = Single Pulse D = 0.9 D = 0.1 100 1,000 0 4 8 12 16 20 Fig. 10 Typical Drain-Source Leakage Current vs. Drain-Source Voltage V , DRAIN-SOURCE VOLTAGE (V) DS I D R A I N - S O U R C E L E A K A G E C U R R E N T ( n A ) D S S T = 25°C A T = 85°C A T = 125°C A T = 150°C A IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) V , SOURCE-DRAIN VOLTAGE (V) SD Fig. 8 Diode Forward Voltage vs. Current I , S O U R C E C U R R E N T ( A ) S T = 25°C A IS, SOURCE CURRENT (A) 0.4 0.8 1.2 1.6 V G A T E T H R E S H O L D V O L T A G E ( V ) G S ( T H ) Fig. 7 Gate Threshold Variation vs. Ambient Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C) A I = 250µA D VGS(TH), GATE THRESHOLD VOLTAGE (V) 486°C/W

Document number: DS31859 Rev. 6 - 2 5 of 6 www.diodes.com July 2021 © Diodes Incorporated DMG1012UW Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT323 SOT323 Dim Min Max Typ A1 0.00 0.10 0.05 A2 0.80 1.00 0.90 b 0.20 0.40 0.30 c 0.08 0.18 0.13 D 1.80 2.20 2.00 E 2.00 2.45 2.225 E1 1.15 1.35 1.25 e -- -- 0.65 e1 1.20 1.40 1.30 F 0.25 0.475 0.3625 L 0.25 0.46 0.355 a 0° 8° -- All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT323 Dimensions Value (in mm) C 0.650 G 1.300 X 0.470 Y 0.600 Y1 2.500 a E1E F e1 b L c e D Y1 G Y X C

Document number: DS31859 Rev. 6 - 2 6 of 6 www.diodes.com July 2021 © Diodes Incorporated DMG1012UW IMPORTANT NOTICE 1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTIC ULAR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. Diodes products may be used to facilitate safety -related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products f or their intended applications, (c) ensuring their applications, which incor porate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functional -safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 3. Diodes assumes no liability for any application- related information, support, assistance or feedback that may be provided by Diodes from time to time. 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