DMG1012T

DMG1012T VBSEMI | Alldatasheet

Document overview

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Technical content

N-Channel 20 V (D-S) MOSFET

FEATURES

• TrenchFET® power MOSFET
• 100 % Rg tested

APPLICATIONS

• Smart phones, tablet PC’s - DC/DC converters - Boost converters - Load switch, OVP switch Notes a. Surface mounted on 1" x 1" FR 4 board. b. t = 10 s. c. Based on T C = 25 °C. d. Maximum under steady state conditions is 360 ° C /W. PRODUCT SUMMARY VDS (V) R DS(on) (Ω) MAX. I D (A) c Qg (TYP.) 20 1.4 nC 0.270 at VGS = 4.5 V 0.75 0.390 at VGS = 2.5 V 0.70 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unle ss otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-So urce Voltage VDS 20 VGate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 0.85 A TC = 70 °C 0.75 TA = 25 °C 0.7 a, b TA = 70 °C 0.6 a, b Pulsed Drain Current (t = 300 μs) IDM 6 Continuous Source-Drain Di ode Current TC = 25 °C IS 0.4 TA = 25 °C 0.3 Maximum Powe r Dissipation TC = 25 °C PD 0.5 WTC = 70 °C 0.3 TA = 25 °C 0.4 a, b TA = 70 °C 0.3 a, b Operating Junction and S torage Temperature Range TJ, Tstg -55 to +150 °CSolderin g Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL T YP. MAX. UNIT Maximum Junction-to-Ambient a, d t ≤ 10 s RthJA 250 300 °C/WMaximu m Junction-to-Foot (Drain) Steady State R thJF 225 270 D S G Top View SC-75 G S D DMG1012T E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

a. Pu ls e test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those l isted under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unles s otherwise noted) PARAMETER S YMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-So urce Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 20 - - V VDS Temper ature Coefficient ΔVDS/TJ ID = 250 μA -3 2- mV/° C VGS(th) Temperatur e Coefficient ΔVGS(th)/TJ -- 3- Gate-Sou rce Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 0.5 - 1.0 V Gate-Source Leakage IGSS VDS = 0 V, VGS = 4.5 V - - 0.1 μA VDS = 0 V, VGS = ± 12 V - - ± 20 Zero Ga te Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V - - 0.1 VDS = 20 V, VGS = 0 V, TJ = 55 °C - - 10 On-Sta te Drain Current a ID(on) VDS ≥ 5 V, VGS = 10 V 2 - - A Drain-So urce On-State Resistance a RDS(on) Ω VGS = 4.5 V, ID = 1 A - 0.270 - VGS = 2.5 V, ID = 0.5 A - 0.390 - Forwar d Transconductance a gfs VDS = 10 V, ID = 1.4 A - 5 - S Dynamic b Input Capacitance Ciss VDS = 15 V, VGS = 0 V, f = 1 MHz - 105 - pFOutput Ca pacitance Coss -2 3- Rev erse Transfer Capacitance Crss -1 1- Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 1.4 A - 2.7 4.1 nC VDS = 15 V, VGS = 4.5 V, ID = 1.4 A -1 . 4 2 . 1 Gate-Source Charge Qgs -0 . 3- Gate-Drain Charge Qgd -0 . 5- Gate Re sistance Rg f = 1 MHz 1.4 7 14 Ω Turn-On Delay Time td(on) VDD = 15 V, RL = 13.6 Ω ID ≅ 1.1 A, VGEN = 10 V, Rg = 1 Ω -24 ns Rise Time tr -9 1 8 Turn-Off Delay Time td(off) -8 1 6 Fall Time tf -8 1 6 Turn-On De lay Time td(on) VDD = 15 V, RL = 13.6 Ω ID ≅ 1.1 A, VGEN = 4.5 V, Rg = 1 Ω -8 1 6 Rise Ti me tr -1 3 2 0 Turn-Of f Delay Time td(off) -1 5 2 3 Fal l Time tf -6 1 2 Drain-Sour ce Body Diode Characteristics Continuous Source-Drain Diode Current I S TC = 25 °C - - 0.4 A Pulse Diode Forward Current a ISM -- 6 Body Diode Voltage VSD IF = 1.1 A - 0.8 1.2 V Body Diode Reverse Recovery Time trr IF = 1.1 A, dI/dt = 100 A/μs, TJ = 25 °C - 8 16 ns B ody Diode Reverse Recovery Charge Q rr -36 n C Reve rse Recovery Fall Time ta -5- ns Reverse Rec overy Rise Time tb -3- DMG1012T E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

ARACTERISTICS (25 °C, unless otherwise noted) Gate Source Voltag e vs. Gate Current Output Characteristics Transfer Characteristics Gate Source Voltage vs. Gate Current On-Resistance vs. Drain Current Gate Charge 0.000 0.001 0.002 0.003 0.004 0.005 0.006 0369 1 2 1 5 IGSS - Gate Current (mA) VGS - Gate-Source Voltage (V) TJ = 25 °C 1.5 4.5 00 .5 11 .5 2 ID - Drain Cur rent (A) VDS -D r a in - t o -Source Voltage (V) VGS = 10 V thru 3 V VGS = 2 V 0.5 1.5 0 0.5 1 1.5 2 ID - Drain Cur rent (A) VGS - Gate-to-Source Voltage (V) TC = 25 °C TC = 125 °C TC = - 55 °C 10-3 10-4 10-5 10-6 10-7 10-8 10-9 0 5 10 15 IGSS - Gate Current (A) VGS - Gate-to-Source Voltage (V) TJ = 150 °C TJ = 25 °C 0.08 0.10 0.14 0.17 0.20 01 .534 .56 RDS(on) -O n - Res istance (Ω) ID -D r a in C u r r e n t ( A ) VGS = 2.5 V VGS = 4.5 V VGS = 10 V 00 .7 1 .4 2 .1 2 .8 VGS - Gate-to-Source Voltage (V) Qg -T otal Gate Ch arge (nC) VDS = 14 V VDS = 15 V VDS = 8 V ID = 1.4 A DMG1012T E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

ARACTERISTICS (25 °C, unless otherwise noted) On-Resistance vs. Junctio n Temperature On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient Source-Drain Diode Forward Voltage Threshold Voltage Safe Operating Area, Junction-to-Ambient 0.65 0.90 1.15 1.40 1.65 - 5 0 - 2 50 2 55 07 5 1 0 0 1 2 5 1 5 0 RDS(on) -O n - Res istance (Normalized) TJ - Junction Temperature (°C) ID = 1.5 A VGS = 10 V; 4.5 V 0.05 0.1 0.15 0.2 0.25 02468 1 0 RDS(on) -O n - Res istance (Ω) VGS - Gate-to-Source Voltage (V) TJ = 125 °C TJ = 25 °C ID = 1.5 A 0.001 0.01 0.1 1 10 100 Time (s) Power (W) 0.1 IS - Source Current (A) VSD - Source-to-Drain Voltage (V) TJ = 150 °C TJ = 25 °C 0.55 0.7 0.85 1.15 1.3 - 50 - 25 0 25 50 75 100 125 150 VGS(th) (V) TJ -T e m pe r a t u r e (°C) ID = 250 μA 0.001 0.01 0.1 0.1 1 10 100 ID - Drain Current (A) VDS -D rain - t o -Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 ms Limited b y RDS(on)* 1 ms TA = 25 °C BVDSS Limited 10 ms 100 μs DC, 10 s, 1 s DMG1012T E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

ARACTERISTICS (25 °C, unless otherwise noted) Current Derating* Powe r, Junction-to-Case Power, Junction-to-Ambient * The power dissipation P D is based on T J (max.) = 150 °C, using junction-to-ca se ther ma l resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 0.45 0.9 1.35 1.8 0 25 50 75 100 125 150 ID - Drain Current (A) TC -C ase Temperature (°C) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power (W) 0.00 0.09 0.18 0.27 0.36 0.45 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power (W) DMG1012T E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

ARACTERISTICS (25 °C, unless otherwise noted) Normaliz ed Thermal Transient Impedance, Junction-to-Ambient Normalized Thermal Transient Impedance, Junction-to-Foot 10-3 10-2 1 10 100010-110-4 100 0.2 0.1 Square Wave Puls e Duration (s) Normalized Effective Tran sient Thermal Impedance 0.1 0.01 Notes: PDM 1. Duty Cycle, D = Per Unit Base=R thJA = 360 °C/W 3. TJM -T A =P DMZthJA(t) 4. Surface Mounted Duty Cycle = 0 Single Pulse 0.02 0.05 10-3 10-2 0 1110-110-4 0.2 0.1 Duty Cyc le = 0.5 Square Wave Pulse Duration (s) Normalized Effective Tran sient Thermal Impedance 0.1 0.01 0.05 Single Pulse 0.02 DMG1012T E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

SC-75A: 3 Leads Notes Dimensions in millimeters will govern. 1. Dimension D does not include mold flash, protrusions or gate burrs. Mold flash protrusions or gate burrs shall not exceed 0.10 mm per end. Dimension E1 does not include Interlead flash or protrusion. Interlead flash or protrusion shall not exceed 0.10 mm per side. 2. Dimensions D and E1 are determined at the outmost extremes of the plastic body exclusive of mold flash, tie bar burrs, gate burrs and interelead flash, but including any mismatch between the top and bottom of the plastic body. 3. Datums A, B and D to be determined 0.10 mm from the lead tip. 4. Terminal positions are shown for reference only. 5. These dimensions apply to the flat section of the lead betwe en 0.08 mm and 0.15 mm from the lead tip. CM A – B 1 2 3 A 2D Cbbb D D 3 D Dbbb Dbbb D B1(b1) 2XB1 E E/2 D bbb D Seating Plane A A2A1 Base Metal With Tin Planting Section B-B 5 Cc1 L B B ddd C C DIMENSIONS TOLERANCES aaa 0.10 bbb 0.10 ccc 0 .10 ddd 0.10 DIM. MILLIMETERS MIN. NOM. M AX. NOTE A- - 0 .80 A1 0.00 - 0.10 A2 0.65 0.70 0.80 B1 0.19 - 0.24 5 b1 0.17 - 0.21 c0 . 1 3 -0 . 1 55 c1 0.10 - 0.12 5 D 1.48 1.575 1.68 1, 2 E 1.50 1.60 1.70 E1 0.66 0.76 0.86 1, 2 e1 0.50 BSC e2 1.00 BSC e3 0.50 BSC L 0.15 0.205 0.30 L1 0.40 ref. L2 0.15 BSC θ 0° - 8° θ1 4° - 10° DMG1012T E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

DS FOR SC-75A: 3-Lead 0.014 (0.356) 0.071 (1.803) Recommended Minimum Pads Dimensions in Inches/(mm) 0.264 (0.660) 0.054 (1.372) 0.031 (0.798) 0.020 (0.503) DMG1012T E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. DMG1012T E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com