DMG1012T
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 7
Technical content
Features
Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected up to 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC -Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Mechanical Data Package: SOT523 Package Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish—Matte Tin Annealed over Alloy 42 Lead- Frame. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.002 grams (Approximate) Ordering Information (Note 4) Part Number Qualification Package Packing Qty. Carrier DMG1012T-7 Commercial SOT523 3000 Tape & Reel DMG1012T-13 Commercial SOT523 10000 Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC ( RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlori ne (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 5. The ESD gate protection diode is only designed to protect against ESD events. No gate -source voltage greater than the maximum VGSS rating (given on page 2) can be applied. Marking Information Date Code Key Year 2009 … 2022 2023 2024 2025 2026 2027 2028 2029 2030 2031 Code W … J K L M N O P R S T Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D SOT523 Top View Equivalent Circuit (Note 5) Top View G S D E S D P R O T E C T E D T O 2 k V NA1 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: J = 2022) M = Month (ex: 1 = January) NA1 YM ESD PROTECTION TO 2kV
Document number: DS31783 Rev. 8 - 2 2 of 7 www.diodes.com February 2022 © Diodes Incorporated DMG1012T Maximum Ratings (@ TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±6 V Continuous Drain Current (Note 6) Steady State TA = +25C TA = +85C ID 0.63 0.45 A Pulsed Drain Current IDM 3 A Thermal Characteristics (@ TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 6) PD 0.28 W Thermal Resistance, Junction to Ambient (Note 6) RJA 452 ° C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@ TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 20 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current TJ = +25° C IDSS — — 100 nA VDS = 20V, VGS = 0V Gate-Source Leakage IGSS — — ±1.0 µA VGS = ±4.5V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) 0.5 — 1.0 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) — 0.3 0.4 Ω VGS = 4.5V, ID = 600mA 0.4 0.5 VGS = 2.5V, ID = 500mA 0.5 0.7 VGS = 1.8V, ID = 350mA Forward Transfer Admittance |Yfs| — 1.4 — S VDS = 10V, ID = 400mA Diode Forward Voltage VSD — 0.7 1.2 V VGS = 0V, IS = 150mA DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss — 60.67 — pF VDS = 16V, VGS = 0V, f = 1.0MHz Output Capacitance Coss — 9.68 — pF Reverse Transfer Capacitance Crss — 5.37 — pF Total Gate Charge Qg — 736.6 — pC VGS = 4.5V, VDS = 10V, ID = 250mA Gate-Source Charge Qgs — 93.6 — pC Gate-Drain Charge Qgd — 116.6 — pC Turn-On Delay Time tD(ON) — 5.1 — ns VDD = 10V, VGS = 4.5V, RL = 47Ω, RG = 10Ω, ID = 200mA Turn-On Rise Time tR — 7.4 — ns Turn-Off Delay Time tD(OFF) — 26.7 — ns Turn-Off Fall Time tF — 12.3 — ns Notes: 6. Device mounted on FR-4 PCB, with minimum recommended pad layout. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing.
Document number: DS31783 Rev. 8 - 2 3 of 7 www.diodes.com February 2022 © Diodes Incorporated DMG1012T 0.3 0.6 0.9 1.2 1.5 0 1 2 3 4 5 Fig. 1 Typical Output Characteristics V , DRAIN-SOURCE VOLTAGE (V)DS I , DRAIN CURRENT (A)D V = 1.2VGS V = 1.5VGS V = 2.0VGS V = 2.5VGS V = 3.0VGS V = 4.5VGS V = 8.0VGS 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage I , DRAIN-SOURCE CURRENT (A)D R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) V = 1.8VGS V = 4.5VGS V = 2.5VGS 0.5 0.7 0.9 1.1 1.3 1.5 1.7 Fig. 5 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( 癈)J R , DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) DS(ON) V = 4.5V I = 1.0A GS D V = 2.5V I = 500mA GS D 0.2 0.4 0.6 0.8 Fig. 6 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (癈)J R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) V = 4.5V I = 1.0A GS D V = 2.5V I = 500mA GS D 0.1 0.2 0.3 0.4 0.5 0.6 I , DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature D R D R A I N - S O U R C E O N - R E S I S T A N C E ( D S ( O N ) T = -55° C A T = 25° C A T = 85° C A T = 125° C A T = 150° C A V = 4.5V GS 0.3 0.6 0.9 1.2 1.5 0 0.5 1 1.5 2 2.5 3 Fig. 2 Typical Transfer Characteristics V , GATE SOURCE VOLTAGE (V) GS I D R A I N C U R R E N T ( A ) D V = 5V DS T = -55° C A T = 25° C A T = 125° C A T = 150° C A T = 85° C A ID, DRAIN CURRENT (A) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) (°C) (°C)
Document number: DS31783 Rev. 8 - 2 4 of 7 www.diodes.com February 2022 © Diodes Incorporated DMG1012T V , SOURCE-DRAIN VOLTAGE (V)SD Fig. 8 Diode Forward Voltage vs. Current 10I , SOURCE CURRENT (A)S T = 25 癈A 100 0 5 10 15 20 Fig. 9 Typical Capacitance V , DRAIN-SOURCE VOLTAGE (V)DS C, CAPACITANCE (pF) Ciss Coss Crss 0.001 0.01 0.1 0.1 1 10 100 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 11 SOA, Safe Operation Area TJ(Max) = 150℃ TC = 25℃ Single Pulse DUT on 1*MRP Board VGS = 4.5V RDS(ON) Limited DC PW = 10s PW = 1s PW = 100ms PW = 10ms PW = 1ms PW = 100µs 100 1,000 0 4 8 12 16 20 Fig. 10 Typical Drain-Source Leakage Current vs. Drain-Source Voltage V , DRAIN-SOURCE VOLTAGE (V) DS I D R A I N - S O U R C E L E A K A G E C U R R E N T ( n A ) D S S T = 25° C A T = 85° C A T = 125° C A T = 150° C A 0.4 0.8 1.2 1.6 V G A T E T H R E S H O L D V O L T A G E ( V ) G S ( T H ) Fig. 7 Gate Threshold Variation vs. Ambient Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (° C) A I = 250µ A D TA = 25°C VGS(TH), GATE THRESHOLD VOLTAGE (V) IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA)
Document number: DS31783 Rev. 8 - 2 5 of 7 www.diodes.com February 2022 © Diodes Incorporated DMG1012T Fig. 11 Transient Thermal Response t , PULSE DURATION TIME (s)1 0.001 0.01 0.1 r(t), TRANSIENT THERMAL RESISTANCE T - T = P * R (t) Duty Cycle, D = t /t J A JA R (t) = r(t) * JA R R = 486 癈 /W JA JA P(pk) D = 0.7 D = 0.5 D = 0.3 D = 0.05 D = 0.02 D = 0.01 D = 0.005 D = Single Pulse D = 0.9 D = 0.1 RθJA(t) = r(t) * RθJA RθJA = 486℃/W t1, PULSE DURATION TIME (s) Fig. 12 Transient Thermal Response
Document number: DS31783 Rev. 8 - 2 6 of 7 www.diodes.com February 2022 © Diodes Incorporated DMG1012T Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT523 Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT523 E1E b D e A1 L c a X Y C SOT523 Dim Min Max Typ A1 0.00 0.10 0.05 A2 0.60 0.80 0.75 A3 0.45 0.65 0.50 b 0.15 0.30 0.22 c 0.10 0.20 0.12 D 1.50 1.70 1.60 E 1.45 1.75 1.60 E1 0.75 0.85 0.80 e 0.50 BSC e1 0.90 1.10 1.00 L 0.20 0.40 0.33 a 0° -- 8° All Dimensions in mm Dimensions Value (in mm) C 1.29 X 0.40 X1 0.70 Y 0.51 Y1 1.80
Document number: DS31783 Rev. 8 - 2 7 of 7 www.diodes.com February 2022 © Diodes Incorporated DMG1012T IMPORTANT NOTICE 1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF A NY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes d oes not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who d esign with Diodes products. Diodes products may be used to facilitate safety -related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products f or the ir intended applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functional -safety related standards, and (d) ensuring they design with appropriate s afeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risk s associated with their applications. 3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will h old Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities. 4. Products described herein may be covered by one or more United States, international or foreign patents and pendi ng patent applications. Product names and markings noted herein may also be covered by one or more United States, international or fore ign trademarks and trademark applications. Diodes does not convey any license under any of its intellectual property righ ts or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document. 5. Diodes products are provided subject to Diodes’ Standard Terms and Conditions of Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/) or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 6. Diodes products and technology may not be used for or incorpo rated into any products or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any a pplicable laws or regulations, or for any unintended or unauth orized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives a nd agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this docume nt is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves t he right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document an d any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 8. Any unauthorized copyin g, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising f rom any such unauthorized use. Copyright © 2022 Diodes Incorporated www.diodes.com