DMG1012T DIODES | Alldatasheet

Document overview

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  • PDF pages: 6

Technical content

Features

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Lead Free By Design/RoHS Compliant (Note 2)
  • ESD Protected up to 2kV
  • "Green" Device (Note 3)
  • Qualified to AEC-Q101 standards for High Reliability Mechanical Data
  • Case: SOT-523
  • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals: Finish ⎯ Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208
  • Terminal Connections: See Diagram
  • Marking Information: See Page 4
  • Ordering Information: See Page 4
  • Weight: 0.002 grams (approximate) Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±6 V Continuous Drain Current (Note 1) Steady State TA = 25°C TA = 85°C ID 0.63 0.45 A Pulsed Drain Current IDM 6 A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Total Power Dissipation (Note 1) PD 0.28 W Thermal Resistance, Junction to Ambient RθJA 452 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 1. Device mounted on FR-4 PCB. 2. No purposefully added lead. SOT-523 TOP VIEW EQUIVALENT CIRCUIT TOP VIEW Source Gate Protection Diode Gate Drain G S D ESD PROTECTED TO 2kV

Document number: DS31783 Rev. 3 - 2 2 of 6 www.diodes.com October 2009 © Diodes Incorporated DMG1012T NEW PRODUCT Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage BVDSS 20 - - V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current TJ = 25°C IDSS - - 100 nA VDS = 20V, VGS = 0V Gate-Source Leakage IGSS - - ±1.0 μA VGS = ±4.5V, VDS = 0V ON CHARACTERISTICS (Note 4) Gate Threshold Voltage VGS(th) 0.5 - 1.0 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS (ON) - 0.3 0.4 Ω VGS = 4.5V, ID = 600mA 0.4 0.5 VGS = 2.5V, ID = 500mA 0.5 0.7 VGS = 1.8V, ID = 350mA Forward Transfer Admittance |Yfs| - 1.4 - S VDS = 10V, ID = 400mA Diode Forward Voltage (Note 4) VSD 0.7 1.2 V VGS = 0V, IS = 150mA DYNAMIC CHARACTERISTICS Input Capacitance Ciss - 60.67 - pF VDS =16V, VGS = 0V, f = 1.0MHz Output Capacitance Coss - 9.68 - pF Reverse Transfer Capacitance Crss - 5.37 - pF Total Gate Charge Qg - 736.6 - pC VGS =4.5V, VDS = 10V, ID =250mA Gate-Source Charge Qgs - 93.6 - pC Gate-Drain Charge Qgd - 116.6 - pC Turn-On Delay Time tD(on) - 5.1 - ns VDD = 10V, VGS = 4.5V, RL = 47Ω, RG = 10Ω, ID = 200mA Turn-On Rise Time tr - 7.4 - ns Turn-Off Delay Time tD(off) - 26.7 - ns Turn-Off Fall Time tf - 12.3 - ns Notes: 4. Short duration pulse test used to minimize self-heating effect. 0.3 0.6 0.9 1.2 1.5 012 345 Fig. 1 Typical Output Characteristics V , DRAIN-SOURCE VOLTAGE (V) DS I, D RAIN CURRENT (A)D V = 1.2VGS V = 1.5VGS V = 2.0VGS V = 2.5VGS V = 3.0VGS V = 4.5VGS V = 8.0VGS 0.3 0.6 0.9 1.2 1.5 0 0.5 1 1.5 2 2.5 3 Fig. 2 Typical Transfer Characteristics V , GATE SOURCE VOLTAGE (V)GS I, D RAIN CURRENT (A)D V = 5 VDS T = -55°CA T = 2 5 ° CA T = 125°CA T = 150°CA T = 8 5 ° CA

Document number: DS31783 Rev. 3 - 2 3 of 6 www.diodes.com October 2009 © Diodes Incorporated DMG1012T NEW PRODUCT 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage I , DRAIN-SOURCE CURRENT (A) D R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) Ω V = 1.8VGS V = 4.5VGS V = 2.5VGS 0.1 0.2 0.3 0.4 0.5 0.6 I , DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature D R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) Ω T = -55°CA T = 2 5 ° CA T = 8 5 ° CA T = 125°CA T = 150°CA V = 4.5VGS 0.5 0.7 0.9 1.1 1.3 1.5 1.7 Fig. 5 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C)J R , DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) DS(ON) V = 4.5V I = 1 . 0 A GS D V = 2.5V I = 500mA GS D 0.2 0.4 0.6 0.8 Fig. 6 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C)J R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) Ω V = 4.5V I = 1.0A GS D V = 2 . 5 V I = 500mA GS D 0.4 0.8 1.2 1.6 V, GATE THRESHOLD VOLTAGE (V)GS(TH) Fig. 7 Gate Threshold Variation vs. Ambient Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)A I = 250µAD V , SOURCE-DRAIN VOLTAGE (V)SD Fig. 8 Diode Forward Voltage vs. Current 10I, S OURCE CURRENT (A)S T = 2 5 ° CA

Document number: DS31783 Rev. 3 - 2 4 of 6 www.diodes.com October 2009 © Diodes Incorporated DMG1012T NEW PRODUCT 100 0 5 10 15 20 Fig. 9 Typical Capacitance V , DRAIN-SOURCE VOLTAGE (V)DS C, CAPACITANCE (pF) Ciss Coss Crss 100 1,000 04 8 1 2 1 6 2 0 Fig. 10 Typical Drain-Source Leakage Current vs. Drain-Source Voltage V , DRAIN-SOURCE VOLTAGE (V) DS I, D RAIN-SOURCE LEAKAGE CURRENT (nA) DSS T = 2 5 ° CA T = 8 5 ° CA T = 1 2 5 ° CA T = 150°CA Fig. 11 Transient Thermal Response t , PULSE DURATION TIME (s)1 0.001 0.01 0.1 r(t), TRANSIENT THERMAL RESISTANCE T - T = P * R ( t ) Duty Cycle, D = t /t JA J A θ R (t) = r(t) * θJA R R = 486°C/W θ θ JA JA P(pk) D = 0.7 D = 0.5 D = 0.3 D = 0.05 D = 0.02 D = 0.01 D = 0.005 D = Single Pulse D = 0.9 D = 0.1 Ordering Information (Note 5) Part Number Case Packaging DMG1012T-7 SOT-523 3000/Tape & Reel Marking Information Date Code Key Year 2009 2010 2011 2012 2013 2014 2015 Code W X Y Z A B C Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D NA1 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September) NA1 YM

Document number: DS31783 Rev. 3 - 2 5 of 6 www.diodes.com October 2009 © Diodes Incorporated DMG1012T NEW PRODUCT Package Outline Dimensions Suggested Pad Layout SOT-523 Dim Min Max Typ A 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 D ⎯ ⎯ 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 J 0.00 0.10 0.05 K 0.60 0.80 0.75 L 0.10 0.30 0.22 M 0.10 0.20 0.12 N 0.45 0.65 0.50 α 0° 8° ⎯ All Dimensions in mm Dimensions Value (in mm) Z 1.8 X 0.4 Y 0.51 C 1.3 E 0.7 A M J LD B C H K G N X E Y CZ

Document number: DS31783 Rev. 3 - 2 6 of 6 www.diodes.com October 2009 © Diodes Incorporated DMG1012T NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or an y product described herein; neither does Di odes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or us er of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated a nd all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. Should Customers purchase or use Diodes Inco rporated products for any unintended or una uthorized application, Customers shall i ndemnify and hold Diodes Incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support dev ice or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporate d and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2009, Diodes Incorporated www.diodes.com