DME150 MICROSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. GENERAL DESCRIPTION The DME 150 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input and ouput prematch for broadband capabilit. Low thermal resistance package reduces junction temperature, extends life. CASE OUTLINE 55AY, STYLE 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC2 290 Watts Maximum Voltage and Current BVces Collector to Base Voltage 55 Volts BVebo Emitter to Base Voltage 4.0 Volts Ic Collector Current 15 Amps Maximum Temperatures Storage Temperature - 65 to + 150 oC Operating Junction Temperature + 150 oC ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS Pout Pin Pg η c VSWR Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance F = 1025-1150 MHz Vcc = 50 Volts PW = 10 µsec DF = 1% F = 1025 MHz 150 7.8 8.3 20:1 Watts Watts dB BVebo BVces hFE θjc2 Emitter to Base Breakdown Collector to Emitter Breakdown DC - Current Gain Thermal Resistance Ie = 15 mA Ic = 25 mA Ic = 250 mA, Vce = 5 V 4.0 100 0.6 Volts Volts oC/W Note 1: At rated output power and pulse conditions 2: At rated pulse conditions Rev A January 2009 DME 150
150 Watts, 50 Volts, Pulsed
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. DME150