DMDT9922 DIODES | Alldatasheet
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Maximum Ratings @ TA = 25/c176C unless otherwise specified A M J LF D B C H K KXX C2 B1 E1 E2 B2 C1 Mechanical Data /c183Case: SOT-363, Molded Plastic /c183Terminals: Solderable per MIL-STD-202, Method 208 /c183Terminal Connections: See Diagram /c183Marking: K3S /c183Weight: .006 grams (approx.) SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J /c190 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 All Dimensions in mm ADVANCE INFORMATION
DS30142 Rev. 1P-5 2 of 2 DMDT9922 ADVANCE INFORMATION Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage V(BR)CBO -50 /c190/c190 V IC = -50/c109A, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -40 /c190/c190 V IC = -1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 /c190/c190 V IE = -50/c109A, IC = 0 Collector-Base Leakage Current ICBO /c190 -0.3 -500 nA VCB = -30V Emitter-Base Leakage Current IEBO /c190/c190 -500 nA VEB = -4.0V Collector-Emitter Leakage Current ICES /c190 -4 -1000 nA VCE = -40V ON CHARACTERISTICS (Note 2) DC Current Gain hFE 300 450 555 /c190 IC = -1.0mA, VCE = -6.0V Collector-Emitter Saturation Voltage VCE(SAT) VCE(SAT) /c190 /c190 -0.1 -0.1 -0.5 /c190 V V I C = -50mA, IB = -5.0mA IC = -1mA, IB = -0.1mA Base-Emitter Impedance rbe /c190 -0.5 /c190/c87 IC = -10/c109A to -1mA Emitter-Base Offset Voltage VOS /c190 10 /c190/c109V VCB = 0V, IC = -1/c109A to -1mA Change in Emitter-Base Offset Voltage vs. Collector-Base Voltage (CMRR) /c68V OS/ /c68VCB /c190 10 /c190/c109V VCB = 0V, IC = -1/c109A to -1mA Change in Emitter-Base Offset Voltage vs. Collector-Current /c68V OS/ /c68IC /c190 5 /c190/c109V VCB = 0V, IC = -10/c109A to -1mA Average Offset Voltage Drift TC VOS /c190 0.5 /c190/c109V/c47/c176C IC = -10/c109A to -1mA Emitter-Base Offset Current IOS /c190 8 /c190 nA IC = -10/c109A, VCB = 0V Change in Emitter-Base Offset Current vs. Collector-Base Voltage /c68I OS/ /c68VCB /c190 30 /c190 nA VCB = 0 to -50V Average Offset Current Drift TC IOS /c190 50 /c190 pA/c47/c176C IC = -10/c109A Collector-Collector Leakage Current ICC /c190 35 /c190 pA VCE = -40V SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo -4 15 pF VCB = -10V, f = 1.0MHz, IE = 0 Input Capacitance Cibo /c190/c190 70 pF VEB = -0.5V, IC = 0, f = 1MHz Output Conductance hOE /c190 10 /c190/c109S IC = -1mA, VCE = -5V Current Gain-Bandwidth Product fT 170 /c190 MHz VCE = -12V, IC = -2.0mA, f = 100MHz Electrical Characteristics @ TA = 25/c176C unless otherwise specified Notes: 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width /c163300/c109s, duty cycle /c1632%.