DMC3400SDW

Document overview

  • Manufacturer or author: Diodes Incorporated
  • PDF pages: 10

Technical content

Document number: DS37690 Rev. 2 - 2 1 of 10 www.diodes.com June 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. DMC3400SDW COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BVDSS RDS(ON) Max ID Max TA = +25° C Q1 30 0.4Ω @ VGS = 10V 0.65A 0.7Ω @ VGS = 4.5V 0.52A Q2 -30 0.9Ω @ VGS = -10V -0.45A Description and Applications This MOSFET is designed to minimize the on -state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

  • Motor control
  • Power-management functions
  • DC-DC converters Features and Benefits
  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • ESD Protected Gate
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Mechanical Data
  • Package: SOT363
  • Package Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminal Connections Indicator: See Diagram
  • Terminals: Finish ⎯ Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208
  • Weight: 0.027 grams (Approximate) Ordering Information (Note 4) Part Number Package Packing Qty. Carrier DMC3400SDW-7 SOT363 3000 Tape & Reel DMC3400SDW-13 SOT363 10000 Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information Date Code Key Year 2015 … 2024 2025 2026 2027 2028 2029 2030 2031 2032 2033 Code C … L M N P R S T U V W Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Gate Protection Diode Gate Protection Diode SOT363 Top View CSI = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: L = 2024) M = Month (ex: 9 = September) ESD PROTECTED CSI YM Top View Pin Out Q2 P-CHANNEAL Q1 N-CHANNEAL

Document number: DS37690 Rev. 2 - 2 2 of 10 www.diodes.com June 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. DMC3400SDW Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value_Q1 Value_Q2 Unit Drain-Source Voltage VDSS 30 -30 V Gate-Source Voltage VGSS ±20 ±20 V Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25C TA = +70C ID 0.65 0.50 -0.45 -0.36 A Maximum Continuous Body Diode Forward Current (Note 6) IS 0.4 -0.35 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 4 -3 A Thermal Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 5) PD 0.31 W Thermal Resistance, Junction to Ambient (Note 5) Steady State RθJA 406 ° C/W Total Power Dissipation (Note 6) PD 0.39 W Thermal Resistance, Junction to Ambient (Note 6) Steady State RθJA 319 ° C/W Thermal Resistance, Junction to Case RθJC 126 ° C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics – N Channel – Q1 (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 30 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS — — 1 μA VDS = 24V, VGS = 0V Gate-Source Leakage IGSS — — ±10 μA VGS = ±16V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) 0.8 — 1.6 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) — 0.2 0.4 Ω VGS = 10V, ID = 0.59A Diode Forward Voltage VSD — 0.8 1.2 V VGS = 0V, IS = 0.23A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss — 55 — pF VDS = 15V, VGS = 0V, f = 1.0MHz Output Capacitance Coss — 8.5 — pF Reverse Transfer Capacitance Crss — 6.5 — pF Gate Resistance Rg — 92 — Ω VDS = VGS = 0V, f = 1.0MHz Total Gate Charge (VGS = 4.5V) Qg — 0.6 — nC VDS = 10V, ID = 250mA Total Gate Charge (VGS = 10V) Qg — 1.4 — nC Gate-Source Charge Qgs — 0.2 — nC Gate-Drain Charge Qgd — 0.1 — nC Turn-On Delay Time tD(ON) — 3.8 — ns VGS = 10V, VDS = 30V, ID = 100mA, RG = 1Ω Turn-On Rise Time tR — 3.5 — ns Turn-Off Delay Time tD(OFF) — 25.2 — ns Turn-Off Fall Time tF — 18.8 — ns Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing.

Document number: DS37690 Rev. 2 - 2 3 of 10 www.diodes.com June 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. DMC3400SDW Electrical Characteristics – P Channel – Q2 (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS -30 — — V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current IDSS — — -1 μA VDS = -24V, VGS = 0V Gate-Source Leakage IGSS — — ±10 μA VGS = ±16V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) -1 — -2.6 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS(ON) — 0.36 0.9 Ω VGS = -10V, ID = -0.42A Diode Forward Voltage VSD — -0.8 -1.2 V VGS = 0V, IS = -0.23A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss — 54 — pF VDS = -15V, VGS = 0V, f = 1.0MHz Output Capacitance Coss — 10 — pF Reverse Transfer Capacitance Crss — 8.3 — pF Gate Resistance Rg — 240 — Ω VDS = VGS = 0V, f = 1.0MHz Total Gate Charge (VGS = -4.5V) Qg — 0.6 — nC VDS = -10V, ID = -0.24A Total Gate Charge (VGS = -10V) Qg — 1.3 — nC Gate-Source Charge Qgs — 0.2 — nC Gate-Drain Charge Qgd — 0.2 — nC Turn-On Delay Time tD(ON) — 5.7 — ns VGS = -10V, VDD = -15V, ID = -0.5A, RG = 1Ω Turn-On Rise Time tR — 8.8 — ns Turn-Off Delay Time tD(OFF) — 35 — ns Turn-Off Fall Time tF — 19 — ns Notes: 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing.

© 2024 Copyright Diodes Incorporated. All Rights Reserved. Figure 25. Transient Thermal Resistance

Document number: DS37690 Rev. 2 - 2 9 of 10 www.diodes.com June 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. DMC3400SDW Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT363 SOT363 Dim Min Max Typ A1 0.00 0.10 0.05 A2 0.90 1.00 0.95 b 0.10 0.30 0.25 c 0.10 0.22 0.11 D 1.80 2.20 2.15 E 2.00 2.20 2.10 E1 1.15 1.35 1.30 e 0.650 BSC F 0.40 0.45 0.425 L 0.25 0.40 0.30 a 0° 8° -- All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT363 Dimensions Value (in mm) C 0.650 G 1.300 X 0.420 Y 0.600 Y1 2.500 e D L b E F c a Y1 G Y X C

Document number: DS37690 Rev. 2 - 2 10 of 10 www.diodes.com June 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. DMC3400SDW IMPORTANT NOTICE 1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes ’ products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who d esign with Diodes’ products. Diodes’ products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of Diodes’ products for their intended applications, (c) ensuring their applications, which incorporate Diodes’ products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality co ntrol techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associ ated with their applications. 3. Diodes assumes no liability for any application -related information, support, assistance or feedback that may be provided by Diodes from time to time. 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