DMC3025LSD

DMC3025LSD

Document overview

• Manufacturer or author: Diodes Incorporated
• PDF pages: 10

Technical content

Features

• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, "Green" Molding Com pound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections Indicator: See Diagram
• Terminals: Finish  Matte Tin Annealed Over Copper Leadframe. Solderable per MIL-STD-202, Method 208
• Weight: 0.008 grams (Approximate) Ordering Information (Note 4) Part Number Case Packaging DMC3025LSD-13 SO-8 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directi ve 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) complian t. 2. See http://www.diodes.com/quality/lead_free.htm l for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <9 00ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at htt p://www.diodes.com/products/packages.html Marking Information Pin Configuration Top View SO-8 Equivalent Circuit Top View Logo Part no. Year: “11” = 2011 1 4 8 5 C3025LD YY WW Xth week: 01 ~ 53 Q2 N-CHANNEL MOSFET Q1 P-CHANNEL MOSFET

Document number: DS35717 Rev. 7 - 2 2 of 10 www.diodes.com February 2015 © Diodes Incorporated DMC3025LSD ADVANCED INFORMATION Maximum Ratings N-CHANNEL– Q2 (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 5) V GS = 10V Steady State TA = +25 °C TA = +70 °C ID 6.5 5.1 A t<10s TA = +25 °C TA = +70 °C ID 8.5 6.8 A Continuous Drain Current (Note 5) V GS = 4.5V Steady State TA = +25 °C TA = +70 °C ID 5.3 4.1 A t<10s TA = +25 °C TA = +70 °C ID 7.0 5.5 A Maximum Continuous Body Diode Forward Current (Note 5) IS 2 A Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM 60 A Pulsed Body Diode Current (10µs pulse, duty cycle = 1%) ISM 60 A Avalanche Current (Note 7) L = 0.1mH IAS 14 A Avalanche Energy (Note 7) L = 0.1mH EAS 10 mJ Maximum Ratings P-CHANNEL– Q1 (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 5) V GS = -10V Steady State TA = +25 °C TA = +70 °C ID -4.2 -3.2 A t<10s TA = +25 °C TA = +70 °C ID -5.5 -4.3 A Continuous Drain Current (Note 5) V GS = -4.5V Steady State TA = +25 °C TA = +70 °C ID -3.5 -2.3 A t<10s TA = +25 °C TA = +70 °C ID -4.1 -3.2 A Maximum Continuous Body Diode Forward Current (Note 5) IS -2 A Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM -30 A Pulsed Body Diode Current (10µs pulse, duty cycle = 1%) ISM -30 A Avalanche Current (Note 7) L = 0.1mH IAS -14 A Avalanche Energy (Note 7) L = 0.1mH EAS 10 mJ Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 6) TA = +25° C PD 1.2 W TA = +70° C 0.77 Thermal Resistance, Junction to Ambient (Note 6) Steady State Rθ JA 104 ° C/W t<10s 62 Total Power Dissipation (Note 5) TA = +25° C PD 1.5 W TA = +70° C 0.95 Thermal Resistance, Junction to Ambient (Note 5) Steady State Rθ JA ° C/W t<10s 49 Thermal Resistance, Junction to Case (Note 5) Rθ JC 15 Operating and Storage Temperature Range TJ, TSTG -55 to +150 ° C Notes: 5. Device mounted on FR-4 substrate PC board , 2oz copper, with 1inch square copper plate. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

Document number: DS35717 Rev. 7 - 2 3 of 10 www.diodes.com February 2015 © Diodes Incorporated DMC3025LSD ADVANCED INFORMATION Electrical Characteristics N-CHANNEL– Q2 (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV DSS 30 — — V VGS = 0V, I D = 250 µA Zero Gate Voltage Drain Current IDSS — — 1 µA VDS = 30V, V GS = 0V Gate-Source Leakage IGSS — — ±1 µA VGS = ±20V, V DS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(th) 1.0 — 2.0 V VDS = V GS , I D = 250 µA Static Drain-Source On-Resistance RDS (ON) — 15 20 mΩ VGS = 10V, I D = 7.4A — 23 32 VGS = 4.5V, I D = 6A Forward Transfer Admittance |Y fs | — 8 — S VDS = 5V, I D = 10A Diode Forward Voltage VSD — 0.70 1.2 V VGS = 0V, I S = 1A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss — 501 — pF VDS = 15V, V GS = 0V, f = 1.0MHz Output Capacitance Coss — 72 — Reverse Transfer Capacitance Crss — 57 — Gate Resistance Rg — 1.84 — Ω VDS = 0V, V GS = 0V, f = 1.0MHz Total Gate Charge (VGS = 4.5V) Q g — 4.6 — nC VDS = 15V, I D = 10A Total Gate Charge (VGS = 10V) Q g — 9.8 — Gate-Source Charge Qgs — 1.6 — Gate-Drain Charge Qgd — 2.0 — Turn-On Delay Time tD(on) — 3.9 — ns VDD = 15V, V GS = 10V, RG = 6Ω, ID = 1A Turn-On Rise Time tr — 4.2 — Turn-Off Delay Time tD(off) — 16.6 — Turn-Off Fall Time tf — 5.8 — Reverse Recovery Time trr — 5.5 — ns IF = 12A, di/dt = 500A/ µs Reverse Recovery Charge Qrr — 2.6 — nC

Document number: DS35717 Rev. 7 - 2 4 of 10 www.diodes.com February 2015 © Diodes Incorporated DMC3025LSD ADVANCED INFORMATION Electrical Characteristics P-CHANNEL – Q1 (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV DSS -30 — — V VGS = 0V, I D = -250 µA Zero Gate Voltage Drain Current IDSS — — -1 µA VDS = -30V, V GS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±20V, V DS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(th) -1.0 — -2.0 V VDS = V GS , I D = -250 µA Static Drain-Source On-Resistance RDS (ON) — 38 45 mΩ VGS = -10V, I D = -5.2A — 65 85 VGS = -4.5V, I D = -4A Forward Transfer Admittance |Y fs | — 5 — S VDS = -5V, I D = -5.2A Diode Forward Voltage VSD — -0.7 -1.2 V VGS = 0V, I S = -1A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss — 590 — pF VDS = -25V, V GS = 0V, f = 1.0MHz Output Capacitance Coss — 69 — pF Reverse Transfer Capacitance Crss — 53 — pF Gate Resistance Rg — 11 — Ω VDS = 0V, V GS = 0V, f = 1.0MHz Total Gate Charge (VGS = 4.5V) Q g — 5.1 — nC VDS = -15V, I D = -6A Total Gate Charge (VGS = 10V) Q g — 10.5 — nC Gate-Source Charge Qgs — 1.8 — nC Gate-Drain Charge Qgd — 1.9 — nC Turn-On Delay Time tD(on) — 6.8 — ns VDD = -15V, V GS = -10V, RG = 6Ω, ID = -1A Turn-On Rise Time tr — 4.9 — ns Turn-Off Delay Time tD(off) — 28.4 — ns Turn-Off Fall Time tf — 12.4 — ns Reverse Recovery Time trr — 14 — ns IF = 12A, di/dt = 500A/ µs Reverse Recovery Charge Qrr — 11 — nC Notes: 7. I AS and E AS rating are based on low frequency and duty cycles to keep T J = +25° C. 8. Short duration pulse test used to minimize self- heating effect. 9. Guaranteed by design. Not subject to product tes ting.

Figure 7. On-Resistance Variation with T emperature Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance Figure 11. Gate Charge Figure 12. SOA, Safe Operation Area

100 I , DRAIN CURRENT (A)D

Document number: DS35717 Rev. 7 - 2 9 of 10 www.diodes.com February 2015 © Diodes Incorporated DMC3025LSD ADVANCED INFORMATION 0.001 0.01 0.1 t1, PULSE DURATION TIMES (sec) Figure 25 Transient Thermal Resistance r(t), TRANSIEN T THERMAL RESISTANC E D = Single Pulse D = 0.005 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.3 D = 0.5 D = 0.7 D = 0.9 R (t) = r(t) * R thja thja R = 83C/W thja Duty Cycle, D = t1/ t2 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. SO-8 SO -8 Dim Min Max A - 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h - 0.35 L 0.62 0.82 θθ θθ 0° 8° All Dimensions in mm Dimensions Value (in mm) X 0.60 Y 1.55 C1 5.4 C2 1.27 Gauge Plane Seating Plane Detail ‘A’ Detail ‘A’ EE1 h L D e b A 45 ° 7° ~9° 0.254 X Y

Document number: DS35717 Rev. 7 - 2 10 of 10 www.diodes.com February 2015 © Diodes Incorporated DMC3025LSD ADVANCED INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTI ES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve th e right to make modifications, enhancements, improv ements, corrections or other changes without further notice to this document and any pro duct described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Cu stomer or user of this document or products describ ed herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporate d products for any unintended or unauthorized appli cation, Customers shall indemnify and hold Diodes Incorporated and its representatives ha rmless against all claims, damages, expenses, and a ttorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patent s pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be tran slated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not a uthorized for use as critical components in life su pport devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary ex pertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety- critical, life support devices or systems, notwiths tanding any devices- or systems-related information or support that may be provided by Diod es Incorporated. Further, Customers must fully ind emnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated www.diodes.com