DMC3021LK4

DMC3021LK4

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• Manufacturer or author: Diodes Incorporated
• PDF pages: 10

Technical content

Document number: DS35082 Rev. 6 - 3 1 of 10 www.diodes.com May 2021 © Diodes Incorporated DMC3021LK4 NEW PRODUCT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device V(BR)DSS RDS(ON) max ID max TC = +25°C Q1 30V 21mΩ @ VGS = 10V 14A 32mΩ @ VGS = 4.5V 14A Q2 -30V 39mΩ @ VGS = -10V -14A 53mΩ @ VGS = -4.5V -14A Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

• Motor Control
• Power Management Functions
• DC-DC Converters
• Backlighting Features and Benefits
• 0.6mm Profile – Ideal for Low Profile Applications
• PCB Footprint of 4mm2
• Low Gate Threshold Voltage
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability Mechanical Data
• Case: TO252-4
• Case Material: Molded Plastic, "Green" Molding Compound UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections Indicator: See diagram
• Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208
• Weight: 0.027 grams (approximate) Ordering Information (Note 4) Part Number Case Packaging DMC3021LK4-13 TO252-4 2500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Hal ogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html Marking Information C3021L YYWW = Manufacturer’s Marking C3021L = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 11 = 2011) WW = Week (01 - 53) Top View Bottom View Pinout Top View N-Channel MOSFET P-Channel MOSFET D D D D G1S2 S1G2 TO252-4L NOT RECOMMENDED FOR NEW DESIGN CONTACT US

Document number: DS35082 Rev. 6 - 3 2 of 10 www.diodes.com May 2021 © Diodes Incorporated DMC3021LK4 NEW PRODUCT Maximum Ratings N-CHANNEL – Q1 (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +70°C ID 9.4 7.5 A Continuous Drain Current (Note 6) VGS = 10V Steady State TC = +25°C TC = +70°C ID 14 14 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 70 A Avalanche Current, (Notes 7) L = 0.1mH IAS 16 A Avalanche Energy, (Notes 7) L = 0.1mH EAS 13 mJ Maximum Ratings P-CHANNEL – Q2 (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 6) VGS = -10V Steady State TA = +25°C TA = +70°C ID -6.8 -5.3 A Continuous Drain Current (Note 6) VGS = -10V Steady State TC = +25°C TC = +70°C ID -14 -14 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM -50 A Avalanche Current, (Notes 7) L = 0.1mH IAS -16 A Avalanche Energy, (Notes 7) L = 0.1mH EAS 13 mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 6) TA = +25°C PD 2.7 W TA = +70°C 1.7 Total Power Dissipation (Note 6) TC = +25°C 22 TC = +70°C 14 Thermal Resistance, Junction to Ambient (Note 6) Steady state RθJA 46 °C/W Thermal Resistance, Junction to Case (Note 6) Steady state RθJC 5.5 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate 7. IAS and EAS rating are based on low frequency and duty cycles to keep T J = 25°C 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing.

Document number: DS35082 Rev. 6 - 3 3 of 10 www.diodes.com May 2021 © Diodes Incorporated DMC3021LK4 NEW PRODUCT Electrical Characteristics N-CHANNEL – Q1 (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS 30 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current @TC = +25°C IDSS — — 1.0 μA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(th) 1 1.5 2.1 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) — 14 21 mΩ VGS = 10V, ID = 7A — 18 32 VGS = 4.5V, ID = 5.6A Forward Transfer Admittance |Yfs| — 8.5 — S VDS = 5V, ID = 7A Diode Forward Voltage VSD — 0.7 1.0 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss — 751 — pF VDS = 10V, VGS = 0V, f = 1.0MHz Output Capacitance Coss — 121 — pF Reverse Transfer Capacitance Crss — 110 — pF Gate Resistance Rg — 1.5 — Ω VDS = 10V, VGS = 0V,f = 1.0MHz Total Gate Charge (4.5V) Qg — 9 — nC VGS = 10V, VDS = 15V, ID = 6A Total Gate Charge (10V) Qg — 17.4 — nC Gate-Source Charge Qgs — 2.2 — nC Gate-Drain Charge Qgd — 3 — nC Turn-On Delay Time tD(on) — 2.5 — ns VDD = 15V, VGS = 10V, RG = 6Ω, RL = 1.8Ω, ID = 6.7A Turn-On Rise Time tr — 6.6 — ns Turn-Off Delay Time tD(off) — 19.0 — ns Turn-Off Fall Time tf — 6.3 — ns Notes: 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 0 0.5 1 1.5 2 V , DRAIN-SOURCE VOLTAGE (V)DS Fig.1 Typical Output Characteristics V = 2.5VGS V = 3.0VGS V = 3.5VGS V = 4.0VGS V = 4.5VGS V = 10VGS I , DRAIN CURRENT (A)D 0 1 2 3 4 5 V , GATE-SOURCE VOLTAGE (V)GS Fig. 2 Typical Transfer Characteristics T = A -55°C V = 5.0VDS T = A 25°C T = A 85°C T = 150°CA T = A 125°C I , DRAIN CURRENT (A)D

Document number: DS35082 Rev. 6 - 3 4 of 10 www.diodes.com May 2021 © Diodes Incorporated DMC3021LK4 NEW PRODUCT 0.01 0.02 0.03 0.04 0.05 0 5 10 15 20 25 30 I , DRAIN-SOURCE CURRENT (A)D Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage R , DRAIN-SOURCE ON-RESISTANCE( )DS(ON) Ω V = 10VGS V = 4.5VGS 0.01 0.02 0.03 0.04 0.05 0 2 4 6 8 10 12 14 16 18 20 I , DRAIN CURRENT (A)D Fig. 4 Typical On-Resistance vs. Drain Current and T emperature T = A -55°C T = A 25°C T = A 85°C T = 125°C A T = A 150°C V = 4.5VGS R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) Ω 0.5 0.7 0.9 1.1 1.3 1.5 1.7 -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)J ° Fig. 5 On-Resistance Variation with Temperature R , DRAIN-SOURCE ON-RESISTANCE (Normalized) DS(ON) V = 4.5V I = 5A GS D V = 10V I = 10A GS D T , JUNCTION TEMPERATURE ( C)J ° Fig. 6 On-Resistance Variation with Temperature R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) Ω 0.01 0.02 0.03 0.04 0.05 -50 -25 0 25 50 75 100 125 150 V = 4.5V I = 5A GS D V = 10V I = 10A GS D T , JUNCTION TEMPERATURE ( C)J ° Fig. 7 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 0.5 1.5 2.5V , GATE THRESHOLD VOLTAGE (V)GS(th) I = 250µAD I = 1mAD V , SOURCE-DRAIN VOLTAGE (V)SD Fig. 8 Diode Forward Voltage vs. Current I , SOURCE CURRENT (A)S T = 25°CA

Document number: DS35082 Rev. 6 - 3 5 of 10 www.diodes.com May 2021 © Diodes Incorporated DMC3021LK4 NEW PRODUCT 100 1,000 10,000 0 5 10 15 20 25 30 V , DRAIN-SOURCE VOLTAGE (V)DS Fig. 9 Typical Drain-Source Leakage Current vs. Voltage I , LEAKAGE CURRENT (nA)DSS T = A 25°C T = A 85°C T = A 125°C T = 150°CA 100 1,000 10,000 0 5 10 15 20 25 30 V , DRAIN-SOURCE VOLTAGE(V)DS Fig. 10 Typical Junction Capacitance Ciss Coss Crss f=1MHz CT, JUNCTION CAPACITANCE (pF) 0 2 4 6 8 10 12 14 16 18 20 Q - (nC)G Fig. 11 Gate Charge Characteristics V = 15V I = 6A DS D V (V)GS 0.1 1 10 100 V , DRAIN-SOURCE VOLTAGE (V)DS Fig. 12 SOA, Safe Operation Area 0.01 0.1 100 P = 10sW DC P = 1sW P = 100msW P = 10msW I , DRAIN CURRENT (A)D T = 150 C T = 25 C Single Pulse J(MAX) A R Limited DS(ON) P = 10µsW P = 1msW P = 100µsW

Document number: DS35082 Rev. 6 - 3 6 of 10 www.diodes.com May 2021 © Diodes Incorporated DMC3021LK4 NEW PRODUCT Electrical Characteristics P-CHANNEL – Q2 (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS -30 — — V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current @TC = +25°C IDSS — — -1 μA VDS = -30V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(th) -1 -1.7 -2.2 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS (ON) — 30 39 mΩ VGS = -10V, ID = -4.3A Forward Transfer Admittance |Yfs| — 10 — S VDS = -5V, ID = -4.3A Diode Forward Voltage VSD — -0.75 -1.0 V VGS = 0V, IS = -1A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss — 1039 — pF VDS = -10V, VGS = 0V, f = 1.0MHz Output Capacitance Coss — 144 — pF Reverse Transfer Capacitance Crss — 134 — pF Gate Resistance Rg — 13 — Ω VDS = 0V, VGS = 0V,f = 1.0MHz Total Gate Charge (4.5V) Qg — 10.1 — nC VGS = -10V, VDS = -15V, ID = -6A Total Gate Charge (10V) Qg — 21.1 — nC Gate-Source Charge Qgs — 2.8 — nC Gate-Drain Charge Qgd — 3.2 — nC Turn-On Delay Time tD(on) — 10.1 — ns VDS = -15V, VGS = -10V, RG = 6Ω, ID = -1A Turn-On Rise Time tr — 6.5 — ns Turn-Off Delay Time tD(off) — 50.1 — ns Turn-Off Fall Time tf — 22.2 — ns Notes: 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 0 0.5 1 1.5 2 -V , DRAIN-SOURCE VOLTAGE (V)DS Fig.13 Typical Output Characteristics -V = 3.0VGS -V = 4.0VGS -V = 4.5VGS -V = 10VGS -I , DRAIN CURRENT (A)D -V = 3.5VGS -V = 2.0VGS -V = 2.5VGS 0 1 2 3 4 5 - GSV , GATE-SOURCE VOLTAGE (V) Fig. 14 Typical Transfer Characteristics T = -55°CA V = -5.0VDS T = A 25°C T = A 85°C T = A 150°C T = A 125°C -I , DRAIN CURRENT (A)D

Document number: DS35082 Rev. 6 - 3 7 of 10 www.diodes.com May 2021 © Diodes Incorporated DMC3021LK4 NEW PRODUCT 0 5 10 15 20 -I , DRAIN-SOURCE CURRENT (A)D Fig. 15 Typical On-Resistance vs. Drain Current and Gate Voltage R , DRAIN-SOURCE ON-RESISTANCE( )DS(ON) Ω 0.02 0.04 0.06 0.08 0.10 -V = 4.5VGS -V = 10VGS 0 2 4 6 8 10 12 14 16 18 20 -I , DRAIN CURRENT (A)D Fig. 16 Typical On-Resistance vs. Drain Current and T emperature R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) Ω 0.02 0.04 0.06 0.08 0.10 0.12 T = A -55°C T = A 25°C T = A 85°C T = A 125°C T = 150°C A V = 4.5VGS 0.5 0.7 0.9 1.1 1.3 1.5 1.7 -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)J ° Fig. 17 On-Resistance Variation with Temperature R , DRAIN-SOURCE ON-RESISTANCE (Normalized) DS(ON) -V = 10V -I = 10A GS D T , JUNCTION TEMPERATURE ( C)J ° Fig. 18 On-Resistance Variation with Temperature R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) Ω -50 -25 0 25 50 75 100 125 150 0.02 0.04 0.06 0.08 -V = 10V -I = 10A GS D -V = 4.5V -I = 5A GS D T , JUNCTION TEMPERATURE ( C)J ° Fig. 19 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 -V , GATE THRESHOLD VOLTAGE (V)GS(th) 0.5 1.5 2.5 -I = 250µAD -I = 1mAD -V , SOURCE-DRAIN VOLTAGE (V)SD Fig. 20 Diode Forward Voltage vs. Current -I , SOURCE CURRENT (A)S T = 25°CA

Document number: DS35082 Rev. 6 - 3 8 of 10 www.diodes.com May 2021 © Diodes Incorporated DMC3021LK4 NEW PRODUCT 0 5 10 15 20 25 30 -V , DRAIN-SOURCE VOLTAGE (V)DS Fig. 21 Typical Drain-Source Leakage Current vs. Voltage -I , LEAKAGE CURRENT (nA)DSS 0.1 100 1,000 10,000 T = A 85°C T = A 125°C T = A 150°C T = 25°CA 100 1,000 10,000 0 5 10 15 20 25 30 V , DRAIN-SOURCE VOLTAGE(V)DS Fig. 22 Typical Junction Capacitance Ciss Coss Crss f = 1MHz CT, JUNCTION CAPACITANCE (pF) Q - (nC)G Fig. 23 Gate Charge Characteristics V (V)GS 0 5 10 15 20 25 V = 15V I = 6A DS D 0.1 1 10 100 -V , DRAIN-SOURCE VOLTAGE (V)DS Fig. 24 SOA, Safe Operation Area 0.01 0.1 100 P = 10sW DC P = 1sW P = 100msW P = 10msW -I , DRAIN CURRENT (A)D P = 10µsW R Limited DS(ON) T = 150 C T = 25 C Single Pulse J(MAX) A P = 1msW P = 100µsW 0.001 0.01 0.1 T1, PULSE DURATION TIME (sec) Fig. 25 Transient Thermal Resistance r(t), TRANSIENT THERMAL RESISTANCE D = 0.5 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 Single Pulse D = 0.9 D = 0.7 R (t) = r(t) * RθθJA JA R = 46°C/W Duty Cycle, D = t1 / t2 θJA

Document number: DS35082 Rev. 6 - 3 9 of 10 www.diodes.com May 2021 © Diodes Incorporated DMC3021LK4 NEW PRODUCT Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. TO252-4 Dim Min Max Typ A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.51 0.71 0.583 b2 0.61 0.79 0.70 b3 5.21 5.46 5.33 c2 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21 − − e − − 1.27 E 6.45 6.70 6.58 E1 4.32 − − H 9.40 10.41 9.91 L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.83 a 0° 10° − All Dimensions in mm Dimensions Value (in mm) c 1.27 c1 2.54 X 1.00 X1 5.73 Y 2.00 Y1 6.17 Y2 1.64 Y3 2.66 E 4X b2 D A e L 5X b a H A2 E1 Y X (4x) c

Document number: DS35082 Rev. 6 - 3 10 of 10 www.diodes.com May 2021 © Diodes Incorporated DMC3021LK4 NEW PRODUCT IMPORTANT NOTICE 1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. 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