DMC3016LDV
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 10
Technical content
Features
Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair MOSFET Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data Case: PowerDI3333-8 (Type UXC) Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish — Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) Ordering Information (Note 4) Part Number Case Packaging DMC3016LDV-7 PowerDI3333-8 (Type UXC) 2,000/Tape & Reel DMC3016LDV-13 PowerDI3333-8 (Type UXC) 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Hal ogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Marking Information Bottom View SD5 = Product Type Marking Code YYWW = Date Code Marking YY = Last Digit of Year (ex: 16 for 2016) WW = Week Code (01 ~ 53) Equivalent Circuit N-Channel MOSFET P-Channel MOSFET PowerDI3333-8 (Type UXC) SD5 Top View PIN1 D1 D2 S1 G1 PowerDI is a registered trademark of Diodes Incorporated.
Document number: DS38936 Rev. 1 - 2 2 of 10 www.diodes.com July 2016 © Diodes Incorporated DMC3016LDV ADVANCED INFORMATION Maximum Ratings Q1 – N-Channel (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current, VGS = 10V (Note 7) Steady State TC = +25°C TC = +70°C ID 21 17 A Maximum Body Diode Forward Current (Note 6) IS 2 A Pulsed Drain Current (380μs pulse, Duty cycle = 1%) IDM 70 A Avalanche Current (L = 0.1mH) (Note 8) IAS 22 A Avalanche Energy (L = 0.1mH) (Note 8) EAS 24 mJ Maximum Ratings Q2 – P-Channel (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current, VGS = -10V (Note 7) Steady State TC = +25°C TC = +70°C ID -15 -12 A Maximum Body Diode Forward Current (Note 6) IS -2 A Pulsed Drain Current (380μs Pulse, Duty Cycle = 1%) IDM -40 A Avalanche Current (L = 0.1mH) (Note 8) IAS -22 A Avalanche Energy (L = 0.1mH) (Note 8) EAS 24 mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 5) PD 0.9 W Thermal Resistance, Junction to Ambient (Note 5) Steady State RθJA 136 °C/W t<10s 78 Total Power Dissipation (Note 6) PD 1.8 W Thermal Resistance, Junction to Ambient (Note 6) Steady State RθJA 70 °C/W t<10s 41 Thermal Resistance, Junction to Case (Note 7) RθJC 15 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. IAS and EAS rating are based on low frequency and duty cycles to keep T J = +25°C.
Document number: DS38936 Rev. 1 - 2 3 of 10 www.diodes.com July 2016 © Diodes Incorporated DMC3016LDV ADVANCED INFORMATION Electrical Characteristics Q1 – N-Channel (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BVDSS 30 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current TJ = +25°C IDSS — — 1 μA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 9) Gate Threshold Voltage VGS(TH) 1.4 — 2.0 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) — 9.5 12 mΩ VGS = 10V, ID = 7A 14 17 VGS = 4.5V, ID = 7A Diode Forward Voltage VSD — 0.70 1.0 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance CISS — 1,184 — pF VDS = 15V, VGS = 0V, f = 1.0MHz Output Capacitance COSS — 137 — Reverse Transfer Capacitance CRSS — 107 — Gate Resistance RG — 3.0 — Ω VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge (VGS = 4.5V) QG — 9.5 — nC VDS = 15V, ID = 12A Total Gate Charge (VGS = 10V) QG — 21 — Gate-Source Charge QGS — 3.8 — Gate-Drain Charge QGD — 4.1 — Turn-On Delay Time tD(ON) — 4.5 — ns VDD = 15V, VGS = 10V, RL = 1.5Ω, RG = 3Ω Turn-On Rise Time tR — 3.3 — Turn-Off Delay Time tD(OFF) — 14 — Turn-Off Fall Time tF — 3.6 — Reverse Recovery Time tRR — 9.3 — ns IF = 12A, di/dt = 500A/μs Reverse Recovery Charge QRR — 2.5 — nC Electrical Characteristics Q2 – P-Channel (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BVDSS -30 — — V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current TJ = +25°C IDSS — — -1 μA VDS = -30V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 9) Gate Threshold Voltage VGS(TH) -1.2 — -2.4 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS (ON) — 21 25 mΩ VGS = -10V, ID = -7A 31 38 VGS = -4.5V, ID = -6.2A Diode Forward Voltage VSD — -0.7 -1.2 V VGS = 0V, IS = -2.1A DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance CISS — 1,188 — pF VDS = -15V, VGS = 0V, f = 1MHz Output Capacitance COSS — 154 — Reverse Transfer Capacitance CRSS — 116 — Gate Resistance RG — 9 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = -4.5V) QG — 9.5 — nC VDS = -15V, ID = -7A Total Gate Charge (VGS = -10V) QG — 19.7 — Gate-Source Charge QGS — 3.1 — Gate-Drain Charge QGD — 3.2 — Turn-On Delay Time tD(ON) — 3.7 — ns VGS = -10V, VDS = -15V, RG = 6Ω, ID = -7A Turn-On Rise Time tR — 2.6 — Turn-Off Delay Time tD(OFF) — 36 — Turn-Off Fall Time tF — 22 — Reverse Recovery Time tRR — 10.4 — ns IF = -7A, di/dt = 100A/μs Reverse Recovery Charge QRR — 3.2 — nC Notes: 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing.
Document number: DS38936 Rev. 1 - 2 8 of 10 www.diodes.com July 2016 © Diodes Incorporated DMC3016LDV ADVANCED INFORMATION 0.001 0.01 0.1 D = 0.5 D = 0.7 D = 0.9 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 D = Single Pulse R (t) = r(t) * R JA JA R = 136°C/WJA Duty Cycle, D = t1/ t2 r(t), TRANSIENT THERMAL RESISTANCE t1, PULSE DURATION TIME (sec) Figure 25 Transient Thermal Resistance
Document number: DS38936 Rev. 1 - 2 9 of 10 www.diodes.com July 2016 © Diodes Incorporated DMC3016LDV ADVANCED INFORMATION Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 (Type UXC) PowerDI3333-8 (Type UXC) Dim Min Max Typ A 0.75 0.85 0.80 A1 0.00 0.05 -- b 0.25 0.40 0.32 c 0.10 0.25 0.15 D 3.20 3.40 3.30 D1 2.95 3.15 3.05 D2 0.90 1.30 1.10 E 3.20 3.40 3.30 E1 2.95 3.15 3.05 E2 1.60 2.00 1.80 E3 0.95 1.35 1.15 E4 0.10 0.30 0.20 e 0.65 L 0.30 0.50 0.40 k 0.50 0.90 0.70 k1 0.13 0.53 0.33 a 0° 12° 10° All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 (Type UXC) Dimensions Value (in mm) C 0.650 G 0.230 G1 0.600 X 0.420 X1 1.200 X2 2.370 X3 2.630 Y 0.600 Y1 1.900 Y2 2.400 Y3 3.600 D EE1 A c L L b e k a X Y C Y1X1 GG1
Document number: DS38936 Rev. 1 - 2 10 of 10 www.diodes.com July 2016 © Diodes Incorporated DMC3016LDV ADVANCED INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license unde r its patent or trademark rights, nor the rights of others. Any Customer or user of t his document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diod es Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application , Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety -critical, life support devices or systems, notwithstanding any devices - or systems -related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2016, Diodes Incorporated www.diodes.com