DMC2710UVT DIODES | Alldatasheet
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Document number: DS41294 Rev. 5 - 2 1 of 10 www.diodes.com May 2021 © Diodes Incorporated DMC2710UVT 20V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BVDSS RDS(ON) Max ID Max TA = +25°C Q1 20V 0.4Ω @ VGS = 4.5V 1.2A 0.5Ω @ VGS = 2.5V 1.0A Q2 -20V 0.7Ω @ VGS = -4.5V -0.9A 0.9Ω @ VGS = -2.5V -0.8A
Description
This MOSFET is designed to minimize the on -state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Applications
Portable Electronics Features and Benefits Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair MOSFET Ultra-Small Surface Mount Package ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Mechanical Data Case: TSOT26 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish—Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.015 grams (Approximate) Ordering Information (Note 4) Part Number Case Packaging DMC2710UVT-7 TSOT26 3,000 / Tape & Reel DMC2710UVT-13 TSOT26 10,000 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information Date Code Key Year 2018 … 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030 Code F … I J K L M N O P R S Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D TSOT26 Top View Device Symbol HX6 = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: I = 2021) M = Month (ex: 9 = September) Top View Pin-Out S2G1 D2D1 ESD PROTECTED N-Channel P-Channel
Document number: DS41294 Rev. 5 - 2 2 of 10 www.diodes.com May 2021 © Diodes Incorporated DMC2710UVT Maximum Ratings (@TA = +25° C, unless otherwise specified.) Thermal Characteristics (@TA = +25° C, unless otherwise specified.) Electrical Characteristics N-CHANNEL – Q1 (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 20 — — V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS — — 100 nA VDS = 20V, VGS = 0V Gate-Source Leakage IGSS — — ±1.0 µA VGS = ± 4.5V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) 0.5 0.7 1.0 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance RDS(ON) 0.18 0.21 0.27 0.4 0.5 0.7 Ω VGS = 4.5V, ID = 600mA VGS = 2.5V, ID = 500mA VGS = 1.8V, ID = 350mA Diode Forward Voltage VSD — 0.7 1.2 V VGS = 0V, IS = 150mA DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss — 42 — pF VDS = 16V, VGS = 0V f = 1.0MHz Output Capacitance Coss — 13 — pF Reverse Transfer Capacitance Crss — 6.5 — pF Total Gate Charge Qg — 0.6 — nC VGS = 4.5V, VDS = 10V, ID = 250mA Gate-Source Charge Qgs — 0.1 — Gate-Drain Charge Qgd — 0.1 — Turn-On Delay Time tD(ON) — 4.9 — ns VDD = 10V, VGS = 4.5V, RL = 47Ω, RG = 10Ω ID = 200mA Turn-On Rise Time tR — 3.1 — Turn-Off Delay Time tD(OFF) — 386 — Turn-Off Fall Time tF — 174 — Reverse Recovery Time tRR — 88 — ns IF = 1A, di/dt = 100A/μs Reverse Recovery Charge QRR — 29 — nC Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. Characteristic Symbol Q1 Value Q2 Value Unit Drain-Source Voltage VDSS 20 -20 V Gate-Source Voltage VGSS ±6 ±6 V Continuous Drain Current (Note 6) N-Channel: VGS = 4.5V P-Channel: VGS = -4.5V Steady State TA = +25° C TA = +70° C ID 1.2 0.9 -0.9 -0.7 A Maximum Continuous Body Diode Forward Current (Note 6) IS 0.9 -0.9 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 5 -2.5 A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) TA = +25° C PD 0.5 W Thermal Resistance, Junction to Ambient (Note 5) Steady State RϴJA 204 ° C/W Total Power Dissipation (Note 6) TA = +25° C PD 0.8 W Thermal Resistance, Junction to Ambient (Note 6) Steady State RϴJA 152 ° C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Document number: DS41294 Rev. 5 - 2 3 of 10 www.diodes.com May 2021 © Diodes Incorporated DMC2710UVT Electrical Characteristics P-CHANNEL – Q2 (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS -20 — — V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS — — -100 nA VDS = -20V, VGS = 0V Gate-Source Leakage IGSS — — ±1.0 µA VGS = ± 4.5V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) -0.5 -0.8 -1.0 V VDS = VGS, ID = -250µA Static Drain-Source On-Resistance RDS(ON) 0.47 0.58 0.76 0.7 0.9 1.3 Ω VGS = -4.5V, ID = -430mA VGS = -2.5V, ID = -300mA VGS = -1.8V, ID = -150mA Diode Forward Voltage VSD — -0.7 -1.2 V VGS = 0V, IS = -150mA DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss — 49 — pF VDS = -16V, VGS = 0V f = 1.0MHz Output Capacitance Coss — 12 — pF Reverse Transfer Capacitance Crss — 3.4 — pF Total Gate Charge Qg — 0.7 — nC VGS = -4.5V, VDS = -10V, ID = -250mA Gate-Source Charge Qgs — 0.1 — Gate-Drain Charge Qgd — 0.1 — Turn-On Delay Time tD(ON) — 16 — ns VDD = -10V, VGS = -4.5V, RL = 47Ω, RG = 10Ω ID = -200mA Turn-On Rise Time tR — 15 — Turn-Off Delay Time tD(OFF) — 213 — Turn-Off Fall Time tF — 89 — Reverse Recovery Time tRR — 10.5 — ns IF = -1A, di/dt = 100A/µs Reverse Recovery Charge QRR — 1.8 — nC Notes: 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing.
Figure 25. Transient Thermal Resistance
Document number: DS41294 Rev. 5 - 2 9 of 10 www.diodes.com May 2021 © Diodes Incorporated DMC2710UVT Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. TSOT26 TSOT26 Dim Min Max Typ A 1.00 A1 0.010 0.100 A2 0.840 0.900 D 2.800 3.000 2.900 E 2.800 BSC E1 1.500 1.700 1.600 b 0.300 0.450 c 0.120 0.200 e 0.950 BSC e1 1.900 BSC L 0.30 0.50 L2 0.250 BSC θ 0° 8° 4° θ1 4° 12° All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. TSOT26 Dimensions Value (in mm) C 0.950 X 0.700 Y 1.000 Y1 3.200 D E1/2 E E/2 e A Seating Plane0 L Gauge Plane 01( 4x) 01( 4x) c b Seating Plane C X Y
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