DMC2700UDMQ
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- Manufacturer or author: Diodes Incorporated
- PDF pages: 9
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Document number: DS39494 Rev. 2 - 3 1 of 9 www.diodes.com August 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. DMC2700UDMQ 20V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BVDSS RDS(ON) max ID max TA = +25C (Note 5) Q1 20V 0.4Ω @ VGS = 4.5V 1.34A 0.5Ω @ VGS = 2.5V 1.65A Q2 -20V 0.7Ω @ VGS = -4.5V -1.14A Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. Portable electronics Features and Benefits Low On-Resistance Low Gate Threshold Voltage VGS(TH) < 1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair MOSFET Ultra-Small Surface Mount Package ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The DIODES™ DMC2700UDMQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/ Mechanical Data Package: SOT26 Package Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Terminals Connections: See Diagram Below Weight: 0.015 grams (Approximate) Ordering Information (Note 4) Part Number Package Packing Qty. Carrier DMC2700UDMQ-7 SOT26 3000 Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information Date Code Key Year 2017 … 2022 2023 2024 2025 2026 2027 2028 2029 2030 2031 Code E … J K L M N O P R S T Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D SOT26 Top View Device Symbol C27 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: J = 2022) M = Month (ex: 9 = September) Top View Pin-Out C27 YM S2G1 D2D1 ESD protected Gate NOT RECOMMENDED FOR NEW DESIGN USE DMC2710UDWQ
Document number: DS39494 Rev. 2 - 3 2 of 9 www.diodes.com August 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. DMC2700UDMQ Maximum Ratings N-CHANNEL – Q1 (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Drain Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±6 V Drain Current (Note 5) TA = +25° C TA = +85° C ID 1.34 0.97 A Maximum Ratings P-CHANNEL – Q2 (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Drain Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±6 V Drain Current (Note 5) TA = +25° C TA = +85° C ID -1.14 -1.07 A Thermal Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation (Note 5) PD 1.12 W Thermal Resistance, Junction to Ambient (Note 5) RJA 111 C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 C Note: 5. For a device mounted on 25mm X 25mm FR-4 PCB board with a high coverage of single sided 1oz copper, in still air conditions with two active die .
Document number: DS39494 Rev. 2 - 3 3 of 9 www.diodes.com August 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. DMC2700UDMQ Electrical Characteristics N-CHANNEL – Q1 (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BVDSS 20 V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS 1 µA VDS = 20V, VGS = 0V Gate-Source Leakage IGSS ±10 µA VGS = ± 4.5V, VDS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(TH) 0.5 1.0 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance RDS(ON) 0.3 0.4 0.5 0.4 0.5 0.7 Ω VGS = 4.5V, ID = 600mA VGS = 2.5V, ID = 500mA VGS = 1.8V, ID = 350mA Forward Transfer Admittance |Yfs| 1.4 S VDS = 10V, ID = 400mA Diode Forward Voltage (Note 6) VSD 0.7 1.2 V VGS = 0V, IS = 150mA DYNAMIC CHARACTERISTICS Input Capacitance Ciss 60.67 pF VDS = 16V, VGS = 0V f = 1.0MHz Output Capacitance Coss 9.68 pF Reverse Transfer Capacitance Crss 5.37 pF Total Gate Charge Qg 736.6 pC VGS = 4.5V, VDS = 10V, ID = 250mA Gate-Source Charge Qgs 93.6 Gate-Drain Charge Qgd 116.6 Turn-On Delay Time tD(ON) 5.1 ns VDD = 10V, VGS = 4.5V, ID = 200mA Turn-On Rise Time tR 7.4 Turn-Off Delay Time tD(OFF) 26.7 Turn-Off Fall Time tF 12.3 Electrical Characteristics P-CHANNEL – Q2 (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BVDSS -20 V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS -1 µA VDS = -20V, VGS = 0V Gate-Source Leakage IGSS ±10 µA VGS = ± 4.5V, VDS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(TH) -0.5 -1.0 V VDS = VGS, ID = -250µA Static Drain-Source On-Resistance RDS(ON) 0.5 0.7 1.0 0.7 0.9 1.3 Ω VGS = -4.5V, ID = -430mA VGS = -2.5V, ID = -300mA VGS = -1.8V, ID = -150mA Forward Transfer Admittance |Yfs| -0.9 S VDS = -10V, ID = -250mA Diode Forward Voltage (Note 6) VSD -0.8 -1.2 V VGS = 0V, IS = -150mA DYNAMIC CHARACTERISTICS Input Capacitance Ciss 59.76 pF VDS = -16V, VGS = 0V f = 1.0MHz Output Capacitance Coss 12.07 pF Reverse Transfer Capacitance Crss 6.36 pF Total Gate Charge Qg 622.4 pC VGS = -4.5V, VDS = -10V, ID = -250mA Gate-Source Charge Qgs 100.3 Gate-Drain Charge Qgd 132.2 Turn-On Delay Time tD(ON) 5.1 ns VDD = -10V, VGS = -4.5V, ID = -200mA Turn-On Rise Time tR 8.1 Turn-Off Delay Time tD(OFF) 28.4 Turn-Off Fall Time tF 20.7 Note: 6. Short duration pulse test used to minimize self-heating effect.
Document number: DS39494 Rev. 2 - 3 4 of 9 www.diodes.com August 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. DMC2700UDMQ N-CHANNEL – Q1 V , DRAIN-SOURCE VOLTAGE (V) Fig.1 Typical Output Characteristics DS I , DRAIN CURRENT(A)D 0.2 0.4 0.6 0.8 1.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage I , DRAIN-SOURCE CURRENT (A)D R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) V = 4.5VGS V = 2.5VGS V = 1.8VGS 0.5 0.7 0.9 1.1 1.3 1.5 1.7 Fig. 5 On-Resistance Variation with Temperature -50 -25 0 V = 2.5V I = 250mA GS D 25 50 75 100 125 150 T , AMBIENT TEMPERATURE ( 癈)A R , DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) DSON V = 4.5V I = 500mA GS D 0.2 0.4 0.6 0.8 Fig. 6 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE ( 癈)A R , DRAIN-SOURCE ON-RESISTANCE ( ) DSON V = 4.5V I = 500mA GS D V = 2.5V I = 250mA GS D 0.2 0.4 0.6 0.8 1.0 0 0.5 1 1.5 2 Fig. 2 Typical Transfer Characteristic V , GATE-SOURCE VOLTAGE (V) GS I D R A I N C U R R E N T ( A ) D T = -55° C A T = 25° C A T = 85° C A T = 125° C A T = 150° C A 0.1 0.2 0.3 0.4 0.5 I , DRAIN CURRENT (A) D Fig. 4 Typical On-Resistance vs. Drain Current and Temperature T = -55° C A T = 25° C A T = 85° C A T = 125° C A T = 150° C A ID, DRAIN CURRENT (A) (°C) (°C) RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
Document number: DS39494 Rev. 2 - 3 5 of 9 www.diodes.com August 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. DMC2700UDMQ N-CHANNEL – Q1 (continued) 100 0 20 Fig. 9 Typical Total Capacitance V , DRAIN-SOURCE VOLTAGE (V)DS 5 1510 C, CAPACITANCE (pF) Ciss Crss Coss 0.4 0.8 1.2 1.6 Fig. 7 Gate Threshold Variation vs. Ambient Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (° C) A V G A T E T H R E S H O L D V O L T A G E ( V ) G S ( T H ) I = 1mA D I = 250µ A D 0.2 0.4 0.6 0.8 1.0 Fig. 8 Diode Forward Voltage vs. Current V , SOURCE-DRAIN VOLTAGE (V) SD I , S O U R C E C U R R E N T ( A ) S T = 25° C A 100 1,000 0 4 8 12 16 20 Fig. 10 Typical Leakage Current vs. Drain-Source Voltage V , DRAIN-SOURCE VOLTAGE (V) DS T = 25° C A T = 85° C A T = 125° C A T = 150° C A VGS(TH), GATE THRESHOLD VOLTAGE (V) IS, SOURCE CURRENT (A) IDSS, LEAKAGE CURRENT (nA)
Document number: DS39494 Rev. 2 - 3 6 of 9 www.diodes.com August 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. DMC2700UDMQ P-CHANNEL – Q2 -V , DRAIN-SOURCE VOLTAGE (V) Fig.11 Typical Output Characteristics DS -I , DRAIN CURRENT(A)D 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Fig. 13 Typical On-Resistance vs. Drain Current and Gate Voltage -I , DRAIN-SOURCE CURRENT (A)D R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) V = -4.5VGS V = -2.5VGS V = -1.8VGS 0.5 0.7 0.9 1.1 1.3 1.5 1.7 Fig. 15 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE ( 癈)A R , DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) DSON V = -4.5V I = -500mA GS D V = -2.5V I = -250mA GS D 0.2 0.4 0.6 0.8 1.0 Fig. 16 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE ( 癈)A R , DRAIN-SOURCE ON-RESISTANCE ( )DSON V = -4.5V I = -500mA GS D V = -2.5V I = -250mA GS D 0.2 0.4 0.6 0.8 1.0 Fig. 12 Typical Transfer Characteristic -V , GATE-SOURCE VOLTAGE (V) GS - I , D R A I N C U R R E N T ( A ) D T = -55° C A T = 25° C A T = 85° C A T = 125° C A T = 150° C A V = -5V DS 0.2 0.4 0.6 0.8 1.0 -I , DRAIN CURRENT (A) D Fig. 14 Typical On-Resistance vs. Drain Current and Temperature T = -55° C A T = 25° C A T = 85° C A T = 125° C A T = 150° C A V = -4.5V GS (°C) (°C) -ID, DRAIN CURRENT (A) RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
Document number: DS39494 Rev. 2 - 3 7 of 9 www.diodes.com August 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. DMC2700UDMQ P-CHANNEL – Q2 (continued) 100 0 5 10 15 20 Fig. 19 Typical Total Capacitance -V , DRAIN-SOURCE VOLTAGE (V)DS C, CAPACITANCE (pF) Ciss Crss Coss 0.4 0.8 1.2 1.6 Fig. 17 Gate Threshold Variation vs. Ambient Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (° C) A - V G A T E T H R E S H O L D V O L T A G E ( V ) G S ( T H ) I = -250µ A D I = -1mA D 0.2 0.4 0.6 0.8 1.0 Fig. 18 Diode Forward Voltage vs. Current -V , SOURCE-DRAIN VOLTAGE (V) SD - I , S O U R C E C U R R E N T ( A ) S T = 25° C A 0 4 8 12 16 20 Fig. 20 Typical Leakage Current vs. Drain-Source Voltage -V , DRAIN-SOURCE VOLTAGE (V) DS 100 1,000 T = 25° C A T = 85° C A T = 125° C A T = 150° C A -IDSS, LEAKAGE CURRENT (nA) -VGS(TH), GATE THRESHOLD VOLTAGE (V) -IS, SOURCE CURRENT (A)
Document number: DS39494 Rev. 2 - 3 8 of 9 www.diodes.com August 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. DMC2700UDMQ Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT26 D e E1 E b A2 A1 Seating Plane L c a SOT26 Dim Min Max Typ A1 0.013 0.10 0.05 A2 1.00 1.30 1.10 A3 0.70 0.80 0.75 b 0.35 0.50 0.38 c 0.10 0.20 0.15 D 2.90 3.10 3.00 e - - 0.95 e1 - - 1.90 E 2.70 3.00 2.80 E1 1.50 1.70 1.60 L 0.35 0.55 0.40 a - - 8° a1 - - 7° All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT26 Y1 G X Y C Dimensions Value (in mm) C 2.40 C1 0.95 G 1.60 X 0.55 Y 0.80 Y1 3.20
Document number: DS39494 Rev. 2 - 3 9 of 9 www.diodes.com August 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. DMC2700UDMQ IMPORTANT NOTICE 1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON -INFRINGEMENT OF TH IRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes ’ products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or an y product described herein. This document is intended for skilled and technically trained engineering customers and users who d esign with Diodes’ products. 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