DMC2700UDM

Document overview

  • Manufacturer or author: Diodes Incorporated
  • PDF pages: 9

Technical content

Document number: DS35360 Rev. 3 - 2 1 of 9 www.diodes.com August 2021 © Diodes Incorporated DMC2700UDM 20V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BVDSS RDS(on) Max ID Max TA = +25°C Q1 20V 0.4Ω @ VGS = 4.5V 1.34A 0.5Ω @ VGS = 2.5V 1.65A Q2 -20V 0.7Ω @ VGS = -4.5V -1.14A Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

  • Portable Electronics Features and Benefits
  • Low On-Resistance
  • Low Gate Threshold Voltage VGS(TH) < 1V
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Complementary Pair MOSFET
  • Ultra-Small Surface Mount Package
  • ESD Protected Gate to 2.5kV HBM
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC -Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/
  • An Automotive-Compliant Part is Available Under Separate Datasheet (DMC2700UDMQ) Mechanical Data
  • Case: SOT26
  • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208
  • Weight: 0.015 grams (Approximate) Ordering Information (Note 4) Part Number Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel DMC2700UDM-7 C27 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. SOT26 Top View Device Symbol Top View Pin-Out ESD PROTECTED TO 2.5kV HBM S2G1 D2D1

Document number: DS35360 Rev. 3 - 2 2 of 9 www.diodes.com August 2021 © Diodes Incorporated DMC2700UDM Marking Information Date Code Key Year 2009 …… 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030 Code W …… I J K L M N O P R S Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Maximum Ratings N-CHANNEL – Q1 (@ TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±6 V Drain Current (Note 5) TA = +25°C TA = +85°C ID 1.34 0.97 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 5 A Pulsed Body Diode Forward Current (10μs Pulse, Duty Cycle = 1%) ISM 5 A Maximum Ratings P-CHANNEL – Q2 (@ TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±6 V Drain Current (Note 5) TA = +25°C TA = +85°C ID -1.14 -1.07 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM -2.5 A Pulsed Body Diode Forward Current (10μs Pulse, Duty Cycle = 1%) ISM -2.5 A Thermal Characteristics (@ TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation (Note 5) PD 1.12 W Thermal Resistance, Junction to Ambient (Note 5) RθJA 111 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Note: 5. For a device mounted on 25mm x 25mm FR-4 PCB board with a high coverage of single sided 1oz copper, in still air conditions with two active die. C27 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: I = 2021) M = Month (ex: 9 = September) C27 YM

Document number: DS35360 Rev. 3 - 2 3 of 9 www.diodes.com August 2021 © Diodes Incorporated DMC2700UDM Electrical Characteristics N-CHANNEL – Q1 (@ TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BVDSS 20   V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS   100 nA VDS = 20V, VGS = 0V Gate-Source Leakage IGSS   ±1.0 µA VGS = ±4.5V, VDS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(th) 0.5  1.0 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance RDS(on) 0.3 0.4 0.5 0.4 0.5 0.7 Ω VGS = 4.5V, ID = 600mA VGS = 2.5V, ID = 500mA VGS = 1.8V, ID = 350mA Forward Transfer Admittance |Yfs|  1.4  S VDS = 10V, ID = 400mA Diode Forward Voltage (Note 6) VSD  0.7 1.2 V VGS = 0V, IS = 150mA DYNAMIC CHARACTERISTICS Input Capacitance Ciss  60.67  pF VDS = 16V, VGS = 0V f = 1.0MHz Output Capacitance Coss  9.68  pF Reverse Transfer Capacitance Crss  5.37  pF Total Gate Charge Qg  736.6  pC VGS = 4.5V, VDS = 10V, ID = 250mA Gate-Source Charge Qgs  93.6  Gate-Drain Charge Qgd  116.6  Turn-On Delay Time tD(on)  5.1  ns VDD = 10V, VGS = 4.5V, RL = 47Ω, RG = 10Ω, ID = 200mA Turn-On Rise Time tR  7.4  Turn-Off Delay Time tD(off)  26.7  Turn-Off Fall Time tF  12.3  Electrical Characteristics P-CHANNEL – Q2 (@ TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BVDSS -20   V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS   -100 nA VDS = -20V, VGS = 0V Gate-Source Leakage IGSS   ±1.0 µA VGS = ±4.5V, VDS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(th) -0.5  -1.0 V VDS = VGS, ID = -250µA Static Drain-Source On-Resistance RDS(on)  0.5 0.7 1.0 0.7 0.9 1.3 Ω VGS = -4.5V, ID = -430mA VGS = -2.5V, ID = -300mA VGS = -1.8V, ID = -150mA Forward Transfer Admittance |Yfs|  -0.9  S VDS = -10V, ID = -250mA Diode Forward Voltage (Note 6) VSD  -0.8 -1.2 V VGS = 0V, IS = -150mA DYNAMIC CHARACTERISTICS Input Capacitance Ciss  59.76  pF VDS = -16V, VGS = 0V f = 1.0MHz Output Capacitance Coss  12.07  pF Reverse Transfer Capacitance Crss  6.36  pF Total Gate Charge Qg  622.4  pC VGS = -4.5V, VDS = -10V, ID = -250mA Gate-Source Charge Qgs  100.3  Gate-Drain Charge Qgd  132.2  Turn-On Delay Time tD(on)  5.1  ns VDD = -10V, VGS = -4.5V, RL = 47Ω, RG = 10Ω, ID = -200mA Turn-On Rise Time tR  8.1  Turn-Off Delay Time tD(off)  28.4  Turn-Off Fall Time tF  20.7  Note: 6. Short duration pulse test used to minimize self-heating effect.

Document number: DS35360 Rev. 3 - 2 4 of 9 www.diodes.com August 2021 © Diodes Incorporated DMC2700UDM N-CHANNEL – Q1 V , DRAIN-SOURCE VOLTAGE (V) Fig.1 Typical Output Characteristics DS I , DRAIN CURRENT(A)D 0.2 0.4 0.6 0.8 1.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage I , DRAIN-SOURCE CURRENT (A)D R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) Ω V = 4.5VGS V = 2.5VGS V = 1.8VGS 0.5 0.7 0.9 1.1 1.3 1.5 1.7 Fig. 5 On-Resistance Variation with Temperature -50 -25 0 V = 2.5V I = 250mA GS D 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)A R , DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) DSON V = 4.5V I = 500mA GS D 0.2 0.4 0.6 0.8 Fig. 6 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)A R , DRAIN-SOURCE ON-RESISTANCE ( ) DSON Ω V = 4.5V I = 500mA GS D V = 2.5V I = 250mA GS D 0.2 0.4 0.6 0.8 1.0 0 0.5 1 1.5 2 Fig. 2 Typical Transfer Characteristic V , GATE-SOURCE VOLTAGE (V) GS I D R A I N C U R R E N T ( A ) D T = -55°C A T = 25°C A T = 85°C A T = 125°C A T = 150°C A 0.1 0.2 0.3 0.4 0.5 I , DRAIN CURRENT (A) D Fig. 4 Typical On-Resistance vs. Drain Current and Temperature R D R A I N - S O U R C E O N - R E S I S T A N C E D S ( O N ) Ω T = -55°C A T = 25°C A T = 85°C A T = 125°C A T = 150°C A ID, DRAIN CURRENT (A) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) (°C) (°C)

Document number: DS35360 Rev. 3 - 2 5 of 9 www.diodes.com August 2021 © Diodes Incorporated DMC2700UDM N-CHANNEL – Q1 (continued) 0.2 0.4 0.6 0.8 1.0 Fig. 8 Diode Forward Voltage vs. Current V , SOURCE-DRAIN VOLTAGE (V)SD I , SOURCE CURRENT (A)S T = 25°CA 100 0 20 Fig. 9 Typical Total Capacitance V , DRAIN-SOURCE VOLTAGE (V)DS 5 1510 C, CAPACITANCE (pF) Ciss Crss Coss 0.4 0.8 1.2 1.6 Fig. 7 Gate Threshold Variation vs. Ambient Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C) A V G A T E T H R E S H O L D V O L T A G E ( V ) G S ( T H ) I = 1mA D I = 250µA D 100 1,000 0 4 8 12 16 20 Fig. 10 Typical Leakage Current vs. Drain-Source Voltage V , DRAIN-SOURCE VOLTAGE (V) DS I L E A K A G E C U R R E N T ( n A ) D S S T = 25°C A T = 85°C A T = 125°C A T = 150°C A VGS(TH), GATE THRESHOLD VOLTAGE (V) IDSS, LEAKAGE CURRENT (nA) TA = 25°C

Document number: DS35360 Rev. 3 - 2 6 of 9 www.diodes.com August 2021 © Diodes Incorporated DMC2700UDM P-CHANNEL – Q2 -V , DRAIN-SOURCE VOLTAGE (V) Fig.11 Typical Output Characteristics DS -I , DRAIN CURRENT(A)D 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Fig. 13 Typical On-Resistance vs. Drain Current and Gate Voltage -I , DRAIN-SOURCE CURRENT (A)D R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) Ω V = -4.5VGS V = -2.5VGS V = -1.8VGS 0.5 0.7 0.9 1.1 1.3 1.5 1.7 Fig. 15 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)A R , DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) DSON V = -4.5V I = -500mA GS D V = -2.5V I = -250mA GS D 0.2 0.4 0.6 0.8 1.0 Fig. 16 On-Resistance Variation with T emperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)A R , DRAIN-SOURCE ON-RESISTANCE ( )DSON Ω V = -4.5V I = -500mA GS D V = -2.5V I = -250mA GS D 0.2 0.4 0.6 0.8 1.0 Fig. 12 Typical Transfer Characteristic -V , GATE-SOURCE VOLTAGE (V) GS - I , D R A I N C U R R E N T ( A ) D T = -55°C A T = 25°C A T = 85°C A T = 125°C A T = 150°C A V = -5V DS 0.2 0.4 0.6 0.8 1.0 -I , DRAIN CURRENT (A) D Fig. 14 Typical On-Resistance vs. Drain Current and Temperature R D R A I N - S O U R C E O N - R E S I S T A N C E ( D S ( O N ) Ω T = -55°C A T = 25°C A T = 85°C A T = 125°C A T = 150°C A V = -4.5V GS -ID, DRAIN CURRENT (A) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) (°C) (°C)

Document number: DS35360 Rev. 3 - 2 7 of 9 www.diodes.com August 2021 © Diodes Incorporated DMC2700UDM P-CHANNEL – Q2 (continued) 0.2 0.4 0.6 0.8 1.0 Fig. 18 Diode Forward Voltage vs. Current -V , SOURCE-DRAIN VOLTAGE (V)SD -I , SOURCE CURRENT (A)S T = 25°CA 100 0 5 10 15 20 Fig. 19 Typical Total Capacitance -V , DRAIN-SOURCE VOLTAGE (V)DS C, CAPACITANCE (pF) Ciss Crss Coss 0.4 0.8 1.2 1.6 Fig. 17 Gate Threshold Variation vs. Ambient Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C) A - V G A T E T H R E S H O L D V O L T A G E ( V ) G S ( T H ) I = -250µA D I = -1mA D 0 4 8 12 16 20 Fig. 20 Typical Leakage Current vs. Drain-Source Voltage -V , DRAIN-SOURCE VOLTAGE (V) DS - I L E A K A G E C U R R E N T ( n A ) D S S 100 1,000 T = 25°C A T = 85°C A T = 125°C A T = 150°C A -VGS(TH), GATE THRESHOLD VOLTAGE (V) -IDSS, LEAKAGE CURRENT (nA) TA = 25°C

Document number: DS35360 Rev. 3 - 2 8 of 9 www.diodes.com August 2021 © Diodes Incorporated DMC2700UDM Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT26 D e E1 E b A2 A1 Seating Plane L c a Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT26 Y1 G X Y C SOT26 Dim Min Max Typ A1 0.013 0.10 0.05 A2 1.00 1.30 1.10 A3 0.70 0.80 0.75 b 0.35 0.50 0.38 c 0.10 0.20 0.15 D 2.90 3.10 3.00 e - - 0.95 e1 - - 1.90 E 2.70 3.00 2.80 E1 1.50 1.70 1.60 L 0.35 0.55 0.40 a - - 8° a1 - - 7° All Dimensions in mm Dimensions Value (in mm) C 2.40 C1 0.95 G 1.60 X 0.55 Y 0.80 Y1 3.20

Document number: DS35360 Rev. 3 - 2 9 of 9 www.diodes.com August 2021 © Diodes Incorporated DMC2700UDM IMPORTANT NOTICE 1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. 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