DMC2400UV-13

DMC2400UV DIODES | Alldatasheet

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Document number: DS35537 Rev. 6 - 2 1 of 10 www.diodes.com February 2012 © Diodes Incorporated DMC2400UV NEW PRODUCT ADVANCE INFORMATION Q1 Q2 COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device V(BR)DSS R DS(ON) max ID max TA = 25°C Q1 20V 0.5Ω @ VGS = 4.5V 1030mA 0.9Ω @ VGS = 1.8V 740mA Q2 -20V 1.0Ω @ VGS = -4.5V -700mA 2.0Ω @ VGS = -1.8V -460mA Features and Benefits

• Low On-Resistance
• Low Gate Threshold Voltage V GS(th) <1V
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Complementary Pair MOSFET
• Ultra-Small Surface Mount Package
• ESD Protected Gate to 2kV HBM
• Lead Free/RoHS Compliant (Note 1)
• "Green" Device, Halogan and Antimony Free (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability Description and Applications This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
• Power management functions
• Battery Operated Systems and Solid-State Relays
• Load switch Mechanical Data
• Case: SOT563
• Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208
• Weight: 0.003 grams (approximate) Ordering Information (Note 3) Part Number Case Packaging DMC2400UV-7 SOT563 3000/Tape & Reel DMC2400UV-13 SOT563 10000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free 3. For packaging details, go to our website at http://www.diodes.com. Marking Information Date Code Key Year 2011 2012 2013 2014 2015 2016 2017 Code Y Z A B C D E Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D ESD PROTECTED TO 2kV Top View Bottom View Equivalent Circuit CA3 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) SOT563

Document number: DS35537 Rev. 6 - 2 2 of 10 www.diodes.com February 2012 © Diodes Incorporated DMC2400UV NEW PRODUCT ADVANCE INFORMATION Maximum Ratings - Q1 N-CHANNEL @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current (Note 5) VGS = 4.5V Steady State TA = 25°C TA = 70°C ID 1030 800 mA t<10s TA = 25°C TA = 70°C ID 1150 900 mA Continuous Drain Current (Note 5) VGS = 1.8V Steady State TA = 25°C TA = 70°C ID 740 570 mA t<10s TA = 25°C TA = 70°C ID 870 700 mA Pulsed Drain Current (10μs pulse, duty cycle = 1%) IDM 3 A Maximum Body Diode continuous Current IS 800 mA Maximum Ratings - Q2 P-CHANNEL @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±8 V Continuous Drain Current (Note 5) VGS = -4.5V Steady State TA = 25°C TA = 70°C ID -700 -550 mA t<10s TA = 25°C TA = 70°C ID -820 -640 mA Continuous Drain Current (Note 5) VGS = -1.8V Steady State TA = 25°C TA = 70°C ID -460 -350 mA t<10s TA = 25°C TA = 70°C ID -550 -420 mA Pulsed Drain Current (10μs pulse, duty cycle = 1%) IDM -2 A Maximum Body Diode continuous Current IS -800 mA Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Total Power Dissipation (Note 4) PD 0.45 W Thermal Resistance, Junction to Ambient (Note 4) Steady state RθJA 281 °C/W t<10s 210 °C/W Total Power Dissipation (Note 5) PD 1 W Thermal Resistance, Junction to Ambient (Note 5) Steady state RθJA 129 °C/W t<10s 97 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Document number: DS35537 Rev. 6 - 2 3 of 10 www.diodes.com February 2012 © Diodes Incorporated DMC2400UV NEW PRODUCT ADVANCE INFORMATION Electrical Characteristics - Q1 N-CHANNEL @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BVDSS 20 - - V VGS = 0V, ID = 1mA Zero Gate Voltage Drain Current TJ = 25°C IDSS - - 100 nA VDS = 20V, VGS = 0V Gate-Source Leakage IGSS - - ±1 μA VGS = ±5V, VDS = 0V - - ±4.0 VGS = ±8V, VDS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(th) 0.5 - 0.9 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS (ON) - 0.3 0.48 Ω VGS = 5.0V, ID = 200mA - 0.35 0.5 VGS = 4.5V, ID = 200mA - 0.45 0.7 VGS = 2.5V, ID = 200mA - 0.55 0.9 VGS = 1.8V, ID = 100mA - 0.65 1.5 VGS = 1.5V, ID = 50mA - 2 - VGS = 1.2V, ID = 1mA Forward Transfer Admittance |Yfs| - 1.4 - S VDS = 3V, ID = 200mA Diode Forward Voltage VSD - 0.7 1.2 V VGS = 0V, IS = 500mA, DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Ciss - 37.1 - pF VDS = 10V, VGS = 0V, f = 1.0MHz Output Capacitance Coss - 6.5 - Reverse Transfer Capacitance Crss - 4.8 - Gate Resistance Rg - 68 - Ω VDS = 0V, VGS = 0V, Total Gate Charge Qg - 0.5 - nC VGS = 4.5V, VDS = 10V, ID = 250mA Gate-Source Charge Qgs - 0.07 - Gate-Drain Charge Qgd - 0.1 - Turn-On Delay Time tD(on) - 4.06 - ns VDD = 10V, VGS = 4.5V, RL = 47Ω, RG = 10Ω, ID = 200mA Turn-On Rise Time tr - 7.28 - Turn-Off Delay Time tD(off) - 13.74 - Turn-Off Fall Time tf - 10.54 - Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. 0.5 1.0 1.5 2.0 012 345 Fig. 1 Typical Output Characteristics V , DRAIN-SOURCE VOLTAGE (V)DS I, D RAIN CURRENT (A)D V = 1.5VGS V = 2 . 0 VGS V = 2.5VGS V = 4.5VGS V = 1.2VGS V = 1.8VGS 0.5 1.0 1.5 0 0.5 1 1.5 2 2.5 3 I, D RAIN CURRENT (A)D Fig. 2 Typical Transfer Characteristics V , GATE SOURCE VOLTAGE (V)GS V = 5 VDS T = -55°CA T = 25°CA T = 125°CA T = 150°CA T = 85°CA

Document number: DS35537 Rev. 6 - 2 4 of 10 www.diodes.com February 2012 © Diodes Incorporated DMC2400UV NEW PRODUCT ADVANCE INFORMATION 0.4 0.8 1.2 1.6 2.0 0 0.4 0.8 1.2 1.6 2 Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage I , DRAIN-SOURCE CURRENT (A)D R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) Ω V = 1.8VGS V = 4.5VGS V = 2.5VGS V = 1.5VGS V = 5.0VGS 0.2 0.4 0.6 0.8 0 0.4 0.8 1.2 1.6 I , DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature D R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) Ω T = -55°CA T = 2 5 ° CA T = 8 5 ° CA T = 125°CA T = 150°CA V = 4.5VGS Fig. 5 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C)J 0.6 0.8 1.0 1.2 1.4 1.6 R , DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) DS(ON) V = 2.5.V I = 500mA GS D V = 4 . 5 V I = 1 . 0 A GS D 0.2 0.4 0.6 0.8 R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) Ω Fig. 6 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C)J V = 4.5V I = 1.0A GS D V = 2.5V I = 500mA GS D 0.2 0.4 0.6 0.8 1.0 1.2 Fig. 7 Gate Threshold Variation vs. Ambient Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)A V , GATE THRESHOLD VOLTAGE (V)GS(TH) I = 250µAD I = 1 m AD 0.4 0.8 1.2 1.6 V , SOURCE-DRAIN VOLTAGE (V)SD Fig. 8 Diode Forward Voltage vs. Current 0.2 I, S OURCE CURRENT (A)S T = 25°CA

Document number: DS35537 Rev. 6 - 2 5 of 10 www.diodes.com February 2012 © Diodes Incorporated DMC2400UV NEW PRODUCT ADVANCE INFORMATION 0 5 10 15 20 Fig. 9 Typical Capacitance V , DRAIN-SOURCE VOLTAGE (V)DS C, CAPACITANCE (pF) f = 1MHz Ciss Coss Crss 0.1 100 1,000 2 4 6 8 10 12 14 16 18 20 Fig. 10 Typical Drain-Source Leakage Current vs. Drain-Source Voltage V , DRAIN-SOURCE VOLTAGE (V) DS I, D RAIN-SOURCE LEAKAGE CURRENT (nA) DSS T = - 5 5 ° CA T = 85°CA T = 125°CA T = 150°CA T = 25°CA Fig. 11 Gate-Charge Characteristics Q , TOTAL GATE CHARGE (nC) g V , GATE-SOURCE VOLTAGE (V) GS V = 1 0 V I = 250mA DS D 0.01 0.1 1 10 100 V , DRAIN-SOURCE VOLTAGE (V) Fig. 12 SOA, Safe Operation Area DS 0.001 0.01 0.1 I, D RAIN CURRENT (A)D R Limited DS(on) DC P = 10sW P = 1 sW P = 100msW P = 10msW P = 1 m sW P = 100µsW P = 1 0 sW µ

Document number: DS35537 Rev. 6 - 2 6 of 10 www.diodes.com February 2012 © Diodes Incorporated DMC2400UV NEW PRODUCT ADVANCE INFORMATION Electrical Characteristics - Q2 P-CHANNEL @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BVDSS -20 - - V VGS = 0V, ID = -1mA Zero Gate Voltage Drain Current TJ = 25°C IDSS - - -100 nA VDS = -20V, VGS = 0V Gate-Source Leakage IGSS - - ±1.0 μA VGS = ±5V, VDS = 0V - - ±5.0 VGS = ±8V, VDS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(th) -0.5 - -1.0 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS (ON) - 0.67 0.97 Ω VGS = -5V, ID = -100mA 0.7 1.0 VGS = -4.5V, ID = -100mA - 5 - VGS = -1.2V, ID = -1mA Forward Transfer Admittance |Yfs| - 0.7 - S VDS = -3V, ID = -100mA Diode Forward Voltage VSD - -0.75 -1.2 V VGS = 0V, IS = -330mA, DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Ciss - 46.1 - pF VDS = 10V, VGS = 0V, f = 1.0MHz Output Capacitance Coss - 7.2 - Reverse Transfer Capacitance Crss - 4.9 - Gate Resistance Rg - 14.3 - Ω VDS = 0V, VGS = 0V, Total Gate Charge VGS = -4.5V Qg - 0.5 - nC VDS = -10V, ID = -250mA Total Gate Charge VGS = -10V Qg - 0.85 - Gate-Source Charge Qgs - 0.09 - Gate-Drain Charge Qgd - 0.09 - Turn-On Delay Time tD(on) - 8.5 - ns VDD = -3V, VGS = -2.5V, RL = 300Ω, RG = 25Ω, ID = -100mA Turn-On Rise Time tr - 4.3 - Turn-Off Delay Time tD(off) - 20.2 - Turn-Off Fall Time tf - 19.2 - Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. 012 345 -V , DRAIN -SOURCE VOLTAGE (V) Fig. 13 Typical Output Characteristics DS -I , D RAIN CURRENT (A)D 0.2 0.4 0.6 0.8 1.0 01 2 34 -V , GATE SOURCE VOLTAGE(V) Fig. 14 Typical Transfer Characteristics GS -I , D RAIN CURRENT (A)D 0.2 0.4 0.6 0.8 1.0 T = 1 2 5 CA °

Document number: DS35537 Rev. 6 - 2 7 of 10 www.diodes.com February 2012 © Diodes Incorporated DMC2400UV NEW PRODUCT ADVANCE INFORMATION -I , DRAIN SOURCE CURRENT Fig. 15 Typical On-Resistance vs. Drain Current and Gate Voltage D R ,DRAIN-S OURCE ON-RESISTANCE( )DS(ON) Ω 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 V= 2 . 5 VGS - V = -4.5VGS V= 1 . 8 VGS - 0.01 0.1 1 10 -I , DRAIN SOURCE CURRENT (A) Fig. 16 Typical On-Resistance vs. Drain Current and T emperature D R , DRAIN-SOURCE ON-RESISTANCE( )DS(ON) Ω T = 150°CA 0.6 0.8 1.0 1.2 1.4 1.6 R , DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) DS(ON) -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)J ° Fig. 17 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)J ° Fig. 18 On-Resistance vs.Temperature R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) Ω 0.5 1.0 1.5 2.0 0.2 0.4 0.6 0.8 1.0 - 5 0 - 2 502 55 07 5 1 0 0 1 2 5 1 5 0 T , JUNCTION TEMPERATURE ( C) Fig. 19 Gate Threshold Variation vs. Ambient Temperature J ° -V , GATE THRESHOLD VOLTAGE (V)GS(th) I= 2 5 0AD μ I= 3 0 0AD μ -V , SOURCE-DRAIN VOLTAGE (V) Fig. 20 Diode Forward Voltage vs. Current SD -I , S OURCE CURRENT (A)S 0.2 0.4 0.6 0.8 1.0 T= 2 5 CA °

Document number: DS35537 Rev. 6 - 2 8 of 10 www.diodes.com February 2012 © Diodes Incorporated DMC2400UV NEW PRODUCT ADVANCE INFORMATION C , JUNCTION CAPACITANCE (pF)T 0 5 10 15 20 -V , DRAIN-SOURCE VOLTAGE (V)DS Fig. 21 Typical Junction Capacitance f = 1MHz Ciss Coss Crss 0.1 100 1,000-I , LEAKA GE CURRENT (nA)DSS -V , DRAIN-SOURCE VOLTAGE(V) Fig. 22 Typical Drain-Source Leakage Current vs. Voltage DS 04 81 2 1 6 2 0 T = 1A 25 C° T = 8A 5C° T = 2A 5C° T = 1A 50 C° Fig. 23 Gate-Charge Characteristics Q , TOTAL GATE CHARGE (nC) g V , GATE-SOURCE VOLTAGE (V) GS V = -10V I = -250mA DS D 0.01 0.1 1 10 100 0.001 0.01 0.1 -V , DRAIN-SOURCE VOLTAGE (V) Fig. 24 SOA, Safe Operation Area DS -I , D RAIN CURRENT (A)D R Limited DS(on) DC P = 10sW P = 1 sW P = 100msW P = 10msW P = 1 m sW P = 100µsW P = 1 0 sW µ Fig. 25 Transient Thermal Response t , PULSE DURATION TIME (s)1 0.00001 0.001 0.01 0.1 r(t), TRANSIENT THERMAL RESISTANCE T - T = P * R ( t ) Duty Cycle, D = t /t JA J A θ R (t) = r(t) * θJA R R = 275°C/W θ θ JA JA P(pk) D = 0.7 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 D = Single Pulse D = 0.9 D = 0.5

Document number: DS35537 Rev. 6 - 2 9 of 10 www.diodes.com February 2012 © Diodes Incorporated DMC2400UV NEW PRODUCT ADVANCE INFORMATION Package Outline Dimensions Suggested Pad Layout SOT563 Dim Min Max Typ A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D - - 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.55 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 0.11 All Dimensions in mm Dimensions Value (in mm) Z 2.2 G 1.2 X 0.375 Y 0.5 C1 1.7 C2 0.5 A M L B C H K G D X Z Y C2C2 G

Document number: DS35537 Rev. 6 - 2 10 of 10 www.diodes.com February 2012 © Diodes Incorporated DMC2400UV NEW PRODUCT ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. Should Customers purchase or use Diodes Inco rporated products for any unintended or una uthorized application, Customers shall i ndemnify and hold Diodes Incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporate d and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2012, Diodes Incorporated www.diodes.com