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- Manufacturer or author: Diodes Incorporated
- PDF pages: 10
Technical content
Document number: DS40400 Rev. 3 - 2 1 of 10 www.diodes.com March 2018 © Diodes Incorporated DMC2057UVT ADVANCE INFORMATION ADVANCED INFORMATION COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BVDSS RDS(ON) ID TA = +25° C N-Channel 20V 42mΩ @ VGS= 4.5V 4.0A 60mΩ @ VGS= 2.5V 3.5A P-Channel -20V 70mΩ @ VGS= -4.5V -3.3A 100mΩ @ VGS= -2.5V -2.8A
Description
This new generation MOSFET is designed to minimize the on -state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
Backlighting DC-DC Converters Power Management Functions Features and Benefits Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data Case: TSOT26 Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.013 grams (Approximate) Ordering Information (Note 4) Part Number Case Packaging DMC2057UVT-7 TSOT26 3000 / Tape & Reel DMC2057UVT-13 TSOT26 10000 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See http://www.diodes.com/quality/lead_free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information Date Code Key Year 2018 2019 2020 2021 2022 2023 2024 2025 Code F G H I J K L M Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D TSOT26 Top View Top View C57 = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: F = 2018) M or M = Month (ex: 9 = September) Q1 N-Channel MOSFET Q2 P-Channel MOSFET C57 YM
Document number: DS40400 Rev. 3 - 2 2 of 10 www.diodes.com March 2018 © Diodes Incorporated DMC2057UVT ADVANCE INFORMATION ADVANCED INFORMATION Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Q1 Value Q2 Value Unit Drain-Source Voltage VDSS 20 -20 V Gate-Source Voltage VGSS ±12 ±8 V Continuous Drain Current (Note 6) N-Channel: VGS = 4.5V P-Channel: VGS = -4.5V Steady State TA = +25° C TA = +70° C ID 4.0 3.5 -3.3 -2.6 A Maximum Continuous Body Diode Forward Current (Note 6) IS 1.2 -1.3 A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) IDM 25 -17 A Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) TA = +25° C PD 0.7 W Thermal Resistance, Junction to Ambient (Note 5) Steady State RJA 173 ° C/W Total Power Dissipation (Note 6) TA = +25° C PD 1.1 W Thermal Resistance, Junction to Ambient (Note 6) Steady State RJA 108 ° C/W Thermal Resistance, Junction to Case RJC 37 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics Q1 N-CHANNEL(@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 20 — — V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS — — 1.0 µA VDS = 20V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±12V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) 0.4 — 1.2 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) — mΩ VGS = 4.5V, ID = 5.0A VGS = 2.5V, ID = 4.0A VGS = 1.8V, ID = 2.0A Diode Forward Voltage VSD — 0.7 1.2 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss — 416 — pF VDS = 10V, VGS = 0V f = 1.0MHz Output Capacitance Coss — 44 — Reverse Transfer Capacitance Crss — 35 — Gate Resistance Rg — 2.0 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = 4.5V) Qg — 4.7 — nC VDS = 10V, ID = 6A Total Gate Charge (VGS = 10V) Qg — 10.5 — Gate-Source Charge Qgs — 0.4 — Gate-Drain Charge Qgd — 1.2 — Turn-On Delay Time tD(ON) — 2.6 — ns VDS = 10V, VGS = 4.5V, Rg = 6, ID = 6A Turn-On Rise Time tR — 3.3 — Turn-Off Delay Time tD(OFF) — 12.2 — Turn-Off Fall Time tF — 3.1 — Reverse Recovery Time tRR — 8.3 — ns IF = 6A, di/dt = 100A/μs Reverse Recovery Charge QRR — 1.3 — nC Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommend ed pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing.
Document number: DS40400 Rev. 3 - 2 3 of 10 www.diodes.com March 2018 © Diodes Incorporated DMC2057UVT ADVANCE INFORMATION ADVANCED INFORMATION Electrical Characteristics Q2 P-CHANNEL (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS -20 — — V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS — — -1.0 µA VDS = -20V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±8V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) -0.4 — -1.0 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS(ON) — 73.5 113 100 160 mΩ VGS = -4.5V, ID = -3.5A VGS = -2.5V, ID = -3.0A VGS = -1.8V, ID = -2.0A Diode Forward Voltage VSD — -0.7 -1.2 V VGS = 0V, IS = -1A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss — 536 — pF VDS = -10V, VGS = 0V, f = 1.0MHz Output Capacitance Coss — 78 — Reverse Transfer Capacitance Crss — 69 — Gate Resistance Rg — 32 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = -4.5V) Qg — 6.5 — nC VDS = -4V, ID = -3.5A Gate-Source Charge Qgs — 0.8 — Gate-Drain Charge Qgd — 1.3 — Turn-On Delay Time tD(ON) — 4.4 — ns VGS = -4.5V, VDS = -4V, Rg = 6Ω, RL = 4Ω Turn-On Rise Time tR — 15.5 — Turn-Off Delay Time tD(OFF) — 38.5 — Turn-Off Fall Time tF — 22.2 — Reverse Recovery Time tRR — 11 — ns IF = -2.0A, di/dt = -100A/μs Reverse Recovery Charge QRR — 2.6 — nC IF = -2.0A, di/dt = -100A/μs Notes: 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing.
Figure 25. Transient Thermal Resistance
Document number: DS40400 Rev. 3 - 2 9 of 10 www.diodes.com March 2018 © Diodes Incorporated DMC2057UVT ADVANCE INFORMATION ADVANCED INFORMATION Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. TSOT26 TSOT26 Dim Min Max Typ A 1.00 A1 0.010 0.100 A2 0.840 0.900 D 2.800 3.000 2.900 E 2.800 BSC E1 1.500 1.700 1.600 b 0.300 0.450 c 0.120 0.200 e 0.950 BSC e1 1.900 BSC L 0.30 0.50 L2 0.250 BSC θ 0° 8° 4° θ1 4° 12° All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. TSOT26 Dimensions Value (in mm) C 0.950 X 0.700 Y 1.000 Y1 3.199 D E1/2 E E/2 e A Seating Plane0 L Gauge Plane 01(4x) 01(4x) c b Seating Plane C X Y
Document number: DS40400 Rev. 3 - 2 10 of 10 www.diodes.com March 2018 © Diodes Incorporated DMC2057UVT ADVANCE INFORMATION ADVANCED INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMP LIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any lia bility arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license unde r its patent or trademark rights, nor the rights of others. Any Customer or user of this document or prod ucts described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diod es Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product nam es and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of thi s document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devi ces or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety -critical, life support devices or systems, notwithstanding any devices - or systems -related information or support that may be provided by Diodes Incorporated. Further, C ustomers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2018, Diodes Incorporated www.diodes.com