DMC2053UFDB
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 10
Technical content
Features
PCB Footprint of 4mm2 Low On-Resistance Low Input Capacitance Low Profile, 0.6mm Maximum Height Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) An automotive-compliant part is available under separate datasheet (DMC2053UFDBQ) Mechanical Data Package: U-DFN2020-6 Package Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Terminals Connections: See Diagram Below Weight: 0.0065 grams (Approximate) Ordering Information (Note 4) Part Number Package Packing Qty. Carrier DMC2053UFDB-7 U-DFN2020-6 (Type B) 3,000 Tape & Reel DMC2053UFDB-13 U-DFN2020-6 (Type B) 10,000 Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which c ontain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information Date Code Key Year 2019 - 2023 2024 2025 2026 2027 2028 2029 2030 2031 2032 Code 9 - 3 4 5 6 7 8 9 0 1 2 Week 1-26 27-52 53 Code A-Z a-z z Internal Code Sun Mon Tue Wed Thu Fri Sat Code T U V W X Y Z Bottom View N-Channel MOSFET P-Channel MOSFET Pin1 U-DFN2020-6 (Type B) Internal Schematic YWX H4 = Product Type Marking Code YWX = Date Code Marking Y = Year (ex: 3 = 2023) W = Week (ex: a = Week 27; z Represents Week 52 and 53) X = Internal Code (ex: U = Monday)
Document number: DS41736 Rev. 3 - 2 2 of 10 www.diodes.com March 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. DMC2053UFDB Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Q1 N-CHANNEL P-CHANNEL Unit Drain-Source Voltage VDSS 20 -20 V Gate-Source Voltage VGSS ±12 ±12 V Continuous Drain Current (Note 6) N-Channel: VGS = 4.5V P-Channel: VGS = -4.5V Steady State TA = +25°C TA = +70°C ID 4.6 3.7 -3.1 -2.5 A Maximum Continuous Body Diode Forward Current (Note 6) IS 1.1 -1.05 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 24 -15 A Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) TA = +25° C PD 0.82 W Thermal Resistance, Junction to Ambient (Note 5) Steady State RϴJA 153 ° C/W Total Power Dissipation (Note 6) TA = +25° C PD 1.14 W Thermal Resistance, Junction to Ambient (Note 6) Steady State RϴJA 110 ° C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics Q1 N-CHANNEL (@ TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 20 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current TJ = +25° C IDSS — — 1.0 µA VDS = 20V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±12V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) 0.4 — 1.0 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) — 24 35 mΩ VGS = 4.5V, ID = 5A 30 43 VGS = 2.5V, ID = 4A 44 56 VGS = 1.8V, ID = 2A Diode Forward Voltage VSD — 0.7 1.2 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss — 369 — pF VDS = 10V, VGS = 0V, f = 1.0MHz Output Capacitance Coss — 54 — Reverse Transfer Capacitance Crss — 32 — Gate Resistance Rg — 4.1 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = 4.5V) Qg — 3.6 — nC VDS = 10V, ID = 6A Total Gate Charge (VGS = 10V) Qg — 7.7 — Gate-Source Charge Qgs — 0.4 — Gate-Drain Charge Qgd — 1.0 — Turn-On Delay Time tD(ON) — 2.6 — ns VDS = 10V, VGS = 4.5V, Rg = 6Ω, RL = 10Ω, ID = 6A Turn-On Rise Time tR — 3.0 — Turn-Off Delay Time tD(OFF) — 12.5 — Turn-Off Fall Time tF — 3.6 — Reverse Recovery Time tRR — 6.0 — ns IF = 1A, di/dt = 100A/μs Reverse Recovery Charge QRR —- 0.9 — nC IF = 1A, di/dt = 100A/μs Notes: 5. Device mounted on FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PCB, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing.
Document number: DS41736 Rev. 3 - 2 5 of 10 www.diodes.com March 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. DMC2053UFDB 0.001 0.01 0.1 R (t) = r(t) * R JA JA R = 151.2° C/WJA Duty Cycle, D = t1/ t2 D = 0.9 D = 0.5 D = 0.7 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 D = Single Pulse r(t), TRANSIENT THERMAL RESISTANCE t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance
Document number: DS41736 Rev. 3 - 2 6 of 10 www.diodes.com March 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. DMC2053UFDB Electrical Characteristics Q2 P-CHANNEL (@ TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS -20 — — V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current TJ = +25° C IDSS — — -1.0 μA VDS = -20V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±12V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) -0.45 — -1.0 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS(ON) — 57 75 mΩ VGS = -4.5V, ID = -3.5A — 73 110 VGS = -2.5V, ID = -3.0A — 105 168 VGS = -1.8V, ID = -2.0A Diode Forward Voltage VSD — -0.7 -1.2 V VGS = 0V, IS = -1.0A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss — 440 — pF VDS = -10V, VGS = 0V, f = 1.0MHz Output Capacitance Coss — 60 — pF Reverse Transfer Capacitance Crss — 48 — pF Gate Resistance Rg — 8.5 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = -4.5V) Qg — 5.9 — nC VDS = -4V, ID = -3.5A Total Gate Charge (VGS = -8V) — 12.7 — nC Gate-Source Charge Qgs — 0.6 — nC Gate-Drain Charge Qgd — 2.1 — nC Turn-On Delay Time tD(ON) — 3.2 — ns VDS = -4V, VGS = -4.5V, RL = 4Ω, Rg = 6Ω Turn-On Rise Time tR — 7.8 — ns Turn-Off Delay Time tD(OFF) — 31 — ns Turn-Off Fall Time tF — 18 — ns Body Diode Reverse Recovery Time tRR — 10.5 — ns IS = -2.0A, dI/dt = 100A/μs Body Diode Reverse Recovery Charge QRR — 3.0 — nC IS = -2.0A, dI/dt = 100A/μs Notes: 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing.
Document number: DS41736 Rev. 3 - 2 9 of 10 www.diodes.com March 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. DMC2053UFDB Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN2020-6 (Type B) U-DFN2020-6 Type B Dim Min Max Typ A 0.545 0.605 0.575 A1 0.00 0.05 0.02 A3 - - 0.13 b 0.20 0.30 0.25 D 1.95 2.075 2.00 D2 0.50 0.70 0.60 e - - 0.65 E 1.95 2.075 2.00 E2 0.90 1.10 1.00 k - - 0.45 L 0.25 0.35 0.30 z - - 0.225 z1 - - 0.175 All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN2020-6 (Type B) Dimensions Value (in mm) C 0.650 G 0.150 G1 0.450 X 0.350 X1 0.600 X2 1.650 Y 0.500 Y1 1.000 Y2 2.300 R0.150 A A1 Seating Plane E b ( Pin #1 ID) e L D k z C Y2 Y1( 2x) X Y G X1( 2x)
Document number: DS41736 Rev. 3 - 2 10 of 10 www.diodes.com March 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. DMC2053UFDB IMPORTANT NOTICE 1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICUL AR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes’ products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engin eering customers and users who design with Diodes’ products. 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