DMC2038LVT

Online Datasheet

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Document overview

Manufacturer or author: Diodes Incorporated
PDF pages: 10

Technical content

Features

Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability Mechanical Data
Case: TSOT26
Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals  Matte Tin A nnealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections Indicator: See Diagram
Weight: 0.013 grams (Approximate) Ordering Information (Note 5) Part Number Compliance Case Packaging DMC2038LVT-7 Standard TSOT26 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to https://www.diodes.com/quality/. 5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information Date Code Key Year 2017 2018 2019 2020 2021 2022 2023 Code E F G H I J K Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D P-Channel N-Channel Top View Pin Configuration Top View 31C YM 31C = Product Type Marking Code YM = Date Code Marking Y = Year (ex: F = 2018) M = Month (ex: 9 = September) TSOT26 NOT RECOMMENDED FOR NEW DESIGN USE DMC2053UVT

Document number: DS35417 Rev. 9 - 3 2 of 10 www.diodes.com September 2020 © Diodes Incorporated DMC2038LVT Maximum Ratings N-CHANNEL – Q1 (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current (Note 6) VGS = 4.5V Steady State TA = +25°C TA = +70°C ID 3.7 3.0 A t<10s TA = +25°C TA = +70°C ID 4.1 3.2 A Continuous Drain Current (Note 7) VGS = 4.5V Steady State TA = +25°C TA = +70°C ID 4.5 3.6 A t<10s TA = +25°C TA = +70°C ID 5.2 4.2 A Maximum Continuous Body Diode Forward Current (Note 7) IS 1.5 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 25 A Maximum Ratings P-CHANNEL – Q2 (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current (Note 6) VGS = -4.5V Steady State TA = +25°C TA = +70°C ID -2.6 -2.1 A t<10s TA = +25°C TA = +70°C ID -2.9 -2.4 A Continuous Drain Current (Note 7) VGS = -4.5V Steady State TA = +25°C TA = +70°C ID -3.1 -2.5 A t<10s TA = +25°C TA = +70°C ID -3.8 -3.0 A Maximum Continuous Body Diode Forward Current (Note 7) IS -1.5 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM -17 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 6) TA = +25°C PD 0.8 W TA = +70°C 0.5 Thermal Resistance, Junction to Ambient (Note 6) Steady State RθJA 168 °C/W t<10s 120 Total Power Dissipation (Note 7) TA = +25°C PD 1.1 W TA = +70°C 0.7 Thermal Resistance, Junction to Ambient (Note 7) Steady State RθJA 114 °C/W t<10s 72 Thermal Resistance, Junction to Case (Note 7) RθJC 39 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

Document number: DS35417 Rev. 9 - 3 3 of 10 www.diodes.com September 2020 © Diodes Incorporated DMC2038LVT Electrical Characteristics N-CHANNEL – Q1 (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS 20 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current @TC = +25°C IDSS — — 1.0 μA VDS = 16V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±12V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(TH) 0.4 — 1.0 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) — 27 35 mΩ VGS = 4.5V, ID = 4.0A — 33 43 VGS = 2.5V, ID = 2.5A — 43 56 VGS = 1.8V, ID = 1.5A Forward Transfer Admittance |Yfs| — 9 — S VDS = 5V, ID = 3.4A Diode Forward Voltage VSD 0.4 — 1.1 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss — 400 530 pF VDS = 10V, VGS = 0V, f = 1.0MHz Output Capacitance Coss — 70 90 pF Reverse Transfer Capacitance Crss — 65 100 pF Gate Resistance Rg — 1.9 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = 4.5V) Qg — 5.7 — nC VDS = 15V, ID = 5.8A Total Gate Charge (VGS = 10V) Qg — 12 17 nC Gate-Source Charge Qgs — 0.7 — nC Gate-Drain Charge Qgd — 1.4 — nC Turn-On Delay Time tD(ON) — 5 10 ns VDS = 10V, VGS = 4.5V, RG = 6Ω, IDS = 1A Turn-On Rise Time tR — 8 16 ns Turn-Off Delay Time tD(OFF) — 25 40 ns Turn-Off Fall Time tF — 8 16 ns Notes: 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. V , DRAIN -SOURCE VOLTAGE(V) Fig. 1 Typical Output Characteristics DS I , DRAIN CURRENT (A)D 0 0.5 1 1.5 2 V =10VGS V =4.5VGS V =4.0VGS V =3.5VGS V =3.0VGS V =2.5VGS V =2.0VGS V =1.5VGS V , GATE SOURCE VOLTAGE(V) Fig. 2 Typical Transfer Characteristics GS I , DRAIN CURRENT (A)D 0 0.5 1 1.5 2 2.5 3 T = 150 CA ° T = 125 CA ° T = 85 CA ° T = 25 CA ° T = -55 CA °V = 5.0VDS

Document number: DS35417 Rev. 9 - 3 4 of 10 www.diodes.com September 2020 © Diodes Incorporated DMC2038LVT 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0 5 10 15 20 R ,DRAIN-SOURCE ON-RESISTANCE( )DS(ON) Ω I , DRAIN SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage D V = 4.5VGS V = 2.5VGS V = 1.8VGS I , DRAIN SOURCE CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and T emperature D R , DRAIN-SOURCE ON-RESISTANCE( )DS(ON) Ω 0.02 0.04 0.06 0.08 0 4 8 12 16 20 V = 4.5VGS T = -55 CA ° T = 25 CA ° T = 85 CA ° T = 125 CA ° T = 150 CA ° -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)J ° Fig. 5 On-Resistance Variation with Temperature R , DRAIN-SOURCE ON-RESISTANCE (Normalized) DS(ON) 0.5 0.7 0.9 1.1 1.3 1.5 1.7 -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)J ° Fig. 6 On-Resistance Variation with Temperature R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) Ω 0.01 0.02 0.03 0.04 0.05 0.06 V =10V I =10A GS D V =5V I =5A GS D I , SOURCE CURRENT (A)S V , SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current SD 0.5 1.5 -50 -25 100 125 150 T , AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature A I =1mA D I =250µA D V G A T E T H R E S H O L D V O L T A G E V G S T H ) VGS(TH), GATE THRESHOLD VOLTAGE (V) (A)

Document number: DS35417 Rev. 9 - 3 5 of 10 www.diodes.com September 2020 © Diodes Incorporated DMC2038LVT 0 2 4 6 8 10 12 14 Q , TOTAL GATE CHARGE (nC) Fig. 10 Gate-Charge Characteristics g V , GATE-SOURCE VOLTAGE (V)GS V =15VDS t1, PULSE DURATION TIMES (sec) Fig. 12 Transient Thermal Resistance R (t) = r(t) * R R = 164°C/W Duty Cycle, D = t1/ t2 θθ θ JA JA JA 0.001 0.01 0.1 r(t), TRANSIENT THERMAL RESISTANCE D = 0.7 D = 0.9 D = 0.5 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 Single Pulse f = 1MHz V , DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Junction Capacitance DS C J U N C T I O N C A P A C I T A N C E p F T C iss C oss C rss 100 1000 0.1 100 V , DRAIN-SOURCE VOLTAGE (V) Fig. 11 SOA, Safe Operation Area DS 0.01 0.1 100 I D R A I N C U R R E N T A D R Limited DSON) DC P = 10s W P = 1s W P = 100ms W P = 10ms W P = 1ms W P = 100µs W T = 150°C T = 25°C J(max) A V = 10V Single Pulse GS DUT on 1 * MRP Board ID, DRAIN CURRENT (A) RθJA(t) = r(t) * RθJA RθJA = 164℃/W Duty Cycle, D = t1 / t2 t1, PULSE DURATION TIME (sec) Fig. 12 Transient Thermal Resistance CT, JUNCTION CAPACITANCE (pF)

Document number: DS35417 Rev. 9 - 3 6 of 10 www.diodes.com September 2020 © Diodes Incorporated DMC2038LVT Electrical Characteristics P-CHANNEL – Q2 (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS -20 — — V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current @TC = +25°C IDSS — — -1.0 μA VDS = -16V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±12V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(TH) -0.4 — -1.0 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS(ON) — 57 74 mΩ VGS = -4.5V, ID = -3.0A — 76 110 VGS = -2.5V, ID = -1.5A — 102 168 VGS = -1.8V, ID = -1.0A Forward Transfer Admittance |Yfs| — 10 — S VDS = -5V, ID = -3.0A Diode Forward Voltage VSD — -0.8 -1.0 V VGS = 0V, IS = -0.6A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss — 530 705 pF VDS = -10V, VGS = 0V, f = 1.0MHz Output Capacitance Coss — 70 95 pF Reverse Transfer Capacitance Crss — 60 90 pF Gate Resistance Rg — 72 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = -4.5V) Qg — 7 10 nC VDS = -15V, ID = -6A Total Gate Charge (VGS = -10V) Qg — 14 — nC Gate-Source Charge Qgs — 0.95 — nC Gate-Drain Charge Qgd — 1.2 — nC Turn-On Delay Time tD(ON) — 11 20 ns VDS = -10V, VGS = -4.5V, RG = 6Ω, IS = -1A Turn-On Rise Time tR — 12 22 ns Turn-Off Delay Time tD(OFF) — 21 34 ns Turn-Off Fall Time tF — 13 23 ns Notes: 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. -V , DRAIN -SOURCE VOLTAGE(V) Fig. 13 Typical Output Characteristics DS -I , DRAIN CURRENT (A)D 0 0.5 1 1.5 2 -V =10VGS -V =4.5VGS -V =4.0VGS -V =3.5VGS -V =3.0VGS -V =2.5VGS -V =2.0VGS -V =1.5VGS -V , GATE SOURCE VOLTAGE(V) Fig. 14 Typical Transfer Characteristics GS I- , DRAIN CURRENT (A)D VDS = -5.0V -ID, DRAIN CURRENT (A)

Document number: DS35417 Rev. 9 - 3 7 of 10 www.diodes.com September 2020 © Diodes Incorporated DMC2038LVT V = -4.5VGS 0.04 0.08 0.12 0.16 -I , DRAIN SOURCE CURRENT Fig. 15 Typical On-Resistance vs. Drain Current and Gate Voltage D 0 5 10 15 20 V = -2.5VGS V = -1.8VGS -I , DRAIN SOURCE CURRENT (A) Fig. 16 Typical On-Resistance vs. Drain Current and T emperature D R , DRAIN-SOURCE ON-RESISTANCE( )DS(ON) Ω 0 4 8 12 16 20 V = 4.5VGS 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 T = -55 CA ° T = 25 CA ° T = 85 CA ° T = 125 CA ° T = 150 CA ° 0.20 -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)J ° Fig. 17 On-Resistance Variation with Temperature R , DRAIN-SOURCE ON-RESISTANCE (Normalized) DS(ON) 0.5 0.7 0.9 1.1 1.3 1.5 1.7 -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)J ° Fig. 18 On-Resistance Variation with Temperature R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) Ω 0.02 0.04 0.06 0.08 0.1 0.12 0.14 -V =10V -I =10A GS D -V =5V -I =5A GS D 0.5 1.5 -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C) Fig. 19 Gate Threshold Variation vs. Ambient T emperature A -V , GATE THRESHOLD VOLTAGE(V)GS(TH) -I , SOURCE CURRENT (A)S -V , SOURCE-DRAIN VOLTAGE (V) Fig. 20 Diode Forward Voltage vs. Current SD VDS = -4.5V (°C) (A) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)

Document number: DS35417 Rev. 9 - 3 8 of 10 www.diodes.com September 2020 © Diodes Incorporated DMC2038LVT 0 2 4 6 8 10 12 14 Q , TOTAL GATE CHARGE (nC) Fig. 22 Gate-Charge Characteristics g -V , GATE-SOURCE VOLTAGE (V)GS Q vs. Vg GS t1, PULSE DURATION TIMES (sec) Fig. 24 Transient Thermal Resistance R (t) = r(t) * R R = 164°C/W Duty Cycle, D = t1/ t2 θθ θ JA JA JA 0.001 0.01 0.1 r(t), TRANSIENT THERMAL RESISTANCE D = 0.7 D = 0.9 D = 0.5 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 Single Pulse f = 1MHz -V , DRAIN-SOURCE VOLTAGE (V) Fig. 21 Typical Junction Capacitance DS C J U N C T I O N C A P A C I T A N C E p F T C iss C oss C rss 100 1000 0.1 100 -V , DRAIN-SOURCE VOLTAGE (V) Fig. 23 SOA, Safe Operation Area DS 0.01 0.1 100 I D R A I N C U R R E N T A D R Limited DS(ON) DC P = 10s W P = 1s W P = 100ms W P = 10ms W P = 1ms W P = 100µs W T = 150°C T = 25°C J(max) A V = -10V Single Pulse GS DUT on 1 * MRP Board -ID, DRAIN CURRENT (A) RθJA(t) = r(t) * RθJA RθJA = 164℃/W Duty Cycle, D = t1 / t2 t1, PULSE DURATION TIME (sec) Fig. 24 Transient Thermal Resistance CT, JUNCTION CAPACITANCE (pF)

Document number: DS35417 Rev. 9 - 3 9 of 10 www.diodes.com September 2020 © Diodes Incorporated DMC2038LVT Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. TSOT26 Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. TSOT26 D E1/2 E E/2 e A Seating Plane0 L Gauge Plane 01( 4x) 01( 4x) c b Seating Plane C X Y TSOT26 Dim Min Max Typ A − 1.00 − A1 0.010 0.100 − A2 0.840 0.900 − D 2.800 3.000 2.900 E 2.800 BSC E1 1.500 1.700 1.600 b 0.300 0.450 − c 0.120 0.200 − e 0.950 BSC e1 1.900 BSC L 0.30 0.50 − L2 0.250 BSC θ 0° 8° 4° θ1 4° 12° − All Dimensions in mm Dimensions Value (in mm) C 0.950 X 0.700 Y 1.000 Y1 3.199

Document number: DS35417 Rev. 9 - 3 10 of 10 www.diodes.com September 2020 © Diodes Incorporated DMC2038LVT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this docum ent is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety -critical, life support devices or systems, notwithstanding any devices - or systems -related information or support that may be provided by Diodes Incorporated. Further, Cust omers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2020, Diodes Incorporated www.diodes.com

Product Information

DMC2038LVT specifications and overview.

Summary

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Rev 4

Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Source title DMC2038LVT Datasheet(PDF) - Diodes Incorporated

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