DMC2025UFDBQ DIODES | Alldatasheet
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PCB Footprint of 4mm2 Low On-Resistance Low Input Capacitance Low Profile, 0.6mm Maximum Height ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The DMC2025UFDBQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/ Mechanical Data Case: U-DFN2020-6 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Terminals Connections: See Diagram Below Weight: 0.0065 grams (Approximate) Ordering Information (Note 4) Part Number Case Packaging DMC2025UFDBQ-7 U-DFN2020-6 (Type B) 3,000/Tape & Reel DMC2025UFDBQ-13 U-DFN2020-6 (Type B) 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<150 0ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Gate Protection Diode Gate Protection Diode ESD PROTECTED U-DFN2020-6 (Type B) Pin1 Bottom View Internal Schematic N-Channel MOSFET P-Channel MOSFET
Document number: DS42696 Rev. 2 - 2 2 of 11 www.diodes.com July 2021 © Diodes Incorporated DMC2025UFDBQ Marking Information Date Code Key Year 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030 2031 2032 Code 1 2 3 4 5 6 7 8 9 0 1 2 Week 1-26 27-52 53 Code A-Z a-z z Internal Code Sun Mon Tue Wed Thu Fri Sat Code T U V W X Y Z Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Q1 N-CHANNEL P-CHANNEL Unit Drain-Source Voltage VDSS 20 -20 V Gate-Source Voltage VGSS ±10 ±8 V Continuous Drain Current (Note 6) N-Channel: VGS = 4.5V P-Channel: VGS = -4.5V Steady State TA = +25°C TA = +70°C ID 6.0 4.8 -3.5 -2.8 A Maximum Continuous Body Diode Forward Current (Note 6) IS 2 -1.0 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 20 -10 A Avalanche Current (L = 0.1mH) (Note 7) IAS 8 -13 A Avalanche Energy (L = 0.1mH) (Note 7) EAS 8 8.5 mJ Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) TA = +25° C PD 0.7 W Thermal Resistance, Junction to Ambient (Note 5) Steady State RϴJA 178 ° C/W Total Power Dissipation (Note 6) TA = +25° C PD 1.4 W Thermal Resistance, Junction to Ambient (Note 6) Steady State RϴJA 92 ° C/W Thermal Resistance, Junction to Case (Note 6) RϴJC 30 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 5. Device mounted on FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PCB, 2oz copper, with 1inch square copper plate. 7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. YWX O4 = Product Type Marking Code YWX = Date Code Marking Y = Year (ex: 1 = 2021) W = Week (ex: a = Week 27; z Represents Week 52 and 53) X = Internal Code (ex: U = Monday)
Document number: DS42696 Rev. 2 - 2 3 of 11 www.diodes.com July 2021 © Diodes Incorporated DMC2025UFDBQ Electrical Characteristics Q1 N-CHANNEL (@ TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS 20 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current TJ = +25° C IDSS — — 1 µA VDS = 20V, VGS = 0V Gate-Source Leakage IGSS — — ±10 µA VGS = ±10V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(TH) 0.5 — 1.0 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) — — 25 mΩ VGS = 4.5V, ID = 4A — 35 VGS = 2.5V, ID = 4A Diode Forward Voltage VSD — 0.7 1.2 V VGS = 0V, IS = 5A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss — 486 — pF VDS = 10V, VGS = 0V, f = 1.0MHz Output Capacitance Coss — 92 — Reverse Transfer Capacitance Crss — 77 — Gate Resistance Rg — 3.2 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = 4.5V) Qg — 5.9 — nC VDS = 10V, ID = 6.5A Total Gate Charge (VGS = 10V) Qg — 12.3 — Gate-Source Charge Qgs — 0.8 — Gate-Drain Charge Qgd — 2.2 — Turn-On Delay Time tD(ON) — 3.4 — ns VDS = 10V, VGS = 4.5V, Rg = 6Ω, RL = 10Ω,ID = 1A Turn-On Rise Time tR — 5.4 — Turn-Off Delay Time tD(OFF) — 17.6 — Turn-Off Fall Time tF — 9.3 — Reverse Recovery Time tRR — 7.7 — ns IF = 1A, di/dt = 100A/μs Reverse Recovery Charge QRR —- 1.5 — nC IF = 1A, di/dt = 100A/μs Notes: 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing.
Document number: DS42696 Rev. 2 - 2 4 of 11 www.diodes.com July 2021 © Diodes Incorporated DMC2025UFDBQ Electrical Characteristics Q2 P-CHANNEL (@ TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS -20 — — V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current TJ = +25° C IDSS — — -1.0 μA VDS = -20V, VGS = 0V Gate-Source Leakage IGSS — — ±10 μA VGS = ±8V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(TH) -0.35 — -1.4 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS(ON) — — 75 mΩ VGS = -4.5V, ID = -2.9A Diode Forward Voltage VSD — — -1.2 V VGS = 0V, IS = -3.0A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss — 642 — pF VDS = -10V, VGS = 0V, f = 1.0MHz Output Capacitance Coss — 98 — pF Reverse Transfer Capacitance Crss — 87 — pF Gate Resistance Rg — 26.5 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = -4.5V) Qg — 8.8 — nC VDS = -10V, ID = -3.7A Total Gate Charge (VGS = -8V) — 15 — nC Gate-Source Charge Qgs — 0.9 — nC Gate-Drain Charge Qgd — 2.9 — nC Turn-On Delay Time tD(ON) — 5.5 — ns VDD = -10V, VGS = -4.5V, RL = 3.3Ω, Rg = 1Ω Turn-On Rise Time tR — 22.6 — ns Turn-Off Delay Time tD(OFF) — 34.1 — ns Turn-Off Fall Time tF — 34.3 — ns Body Diode Reverse Recovery Time tRR — 13 — ns IS = -3.0A, dI/dt = 100A/μs Body Diode Reverse Recovery Charge QRR — 3.3 — nC IS = -3.0A, dI/dt = 100A/μs Notes: 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing.
Figure 25. Transient Thermal Resistance
Document number: DS42696 Rev. 2 - 2 10 of 11 www.diodes.com July 2021 © Diodes Incorporated DMC2025UFDBQ Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN2020-6 (Type B) U-DFN2020-6 Type B Dim Min Max Typ A 0.545 0.605 0.575 A1 0.00 0.05 0.02 A3 - - 0.13 b 0.20 0.30 0.25 D 1.95 2.075 2.00 D2 0.50 0.70 0.60 e - - 0.65 E 1.95 2.075 2.00 E2 0.90 1.10 1.00 k - - 0.45 L 0.25 0.35 0.30 z - - 0.225 z1 - - 0.175 All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN2020-6 (Type B) Dimensions Value (in mm) C 0.650 G 0.150 G1 0.450 X 0.350 X1 0.600 X2 1.650 Y 0.500 Y1 1.000 Y2 2.300 R0.150 A A1 Seating Plane E b ( Pin #1 ID) e L D k z C Y2 Y1( 2x) X Y G X1( 2x)
Document number: DS42696 Rev. 2 - 2 11 of 11 www.diodes.com July 2021 © Diodes Incorporated DMC2025UFDBQ IMPORTANT NOTICE 1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTIC ULAR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operati on of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engi neering customers and users who design with Diodes products. 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