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- Manufacturer or author: Diodeas Incorporated
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Document number: DS32121 Rev. 6 - 2 1 of 11 www.diodes.com April 2020 © Diodes Incorporated DMC2020USD 20V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device V(BR)DSS RDS(on) max ID Max TA = +25C Q1 20V 20m @ VGS = 4.5V 8.5A 28m @ VGS = 2.5V 7.2A Q2 -20V 33m @ VGS = -4.5V -6.8A 45m @ VGS = -2.5V -5.8A Description and Applications This MOSFET has been designed to minimize the on -state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Motor control DC-DC Converters Power management functions Notebook Computers and Printers Features and Benefits Reduced footprint with two discretes in a single SO8 Low gate drive Low input capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected up to 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotive- products/. This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/ Mechanical Data Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (approximate) Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel DMC2020USD-13 C2020UD 13 12 2,500 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (R oHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information SO-8 Top View Top View D1S1 D2 Equivalent Circuit C2020UD YY WW ESD PROTECTED TO 2kV Q1 N-Channel Q2 P-Channel Source Gate Drain Body Diode Gate Protection Diode Source Gate Drain Body Diode Gate Protection Diode C2020UD YY WW = Manufacturer’s Marking C2022UD = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 14 = 2014) WW = Week (01 - 53) YY = Date Code Marking for SAT (Shanghai Assembly/ Test site) YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Document number: DS32121 Rev. 6 - 2 2 of 11 www.diodes.com April 2020 © Diodes Incorporated DMC2020USD Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol N-Channel - Q1 P-Channel - Q2 Units Drain-Source Voltage VDSS 20 -20 V Gate-Source Voltage VGSS 10 10 Continuous Drain Current VGS = 4.5V (Notes 6 & 8) ID 8.5 -6.8 A TA = 70° C (Notes 6 & 8) 6.8 -5.4 Pulsed Drain Current VGS = 4.5V (Notes 7 & 8) IDM 33.6 -26.8 Continuous Source Current (Body diode) (Notes 6 & 8) IS 4.0 -4.0 Pulsed Source Current (Body diode) (Notes 7 & 8) ISM 33.6 -26.8 Thermal Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol N-Channel - Q1 P-Channel - Q2 Unit Power Dissipation Linear Derating Factor (Notes 5 & 8) PD 1.25 W mW/C (Notes 5 & 9) 1.8 14.3 (Notes 6 & 8) 2.14 17.2 Thermal Resistance, Junction to Ambient (Notes 5 & 8) RθJA 100 ° C/W (Notes 5 & 9) 70 (Notes 6 & 8) 58 Thermal Resistance, Junction to Lead (Notes 8 & 10) RθJL 51 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 6. Same as note (2), except the device is measured at t 10 sec. 7. Same as note (2), except the device is pulsed with D = 0.02 and pulse width 300µs. 8. For a dual device with one active die. 9. For a device with two active die running at equal power. 10. Thermal resistance from junction to solder-point (at the end of the drain lead).
Document number: DS32121 Rev. 6 - 2 3 of 11 www.diodes.com April 2020 © Diodes Incorporated DMC2020USD Thermal Characteristics 0.1 1 10 10m 100m 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 100μ 1m 10m 100m 1 10 100 1k 100 100μ 1m 10m 100m 1 10 100 1k 100 0.1 1 10 10m 100m 25 mm x 25 mm 1oz FR4 25 mm x 25 mm 1oz FR4 25 mm x 25 mm 1oz FR4 One active die 100us 100ms RDS(ON) Limited 1ms N-channel Safe Operating Area Single Pulse Tamb= 25 o C One active die DC 10ms ID Drain Current (A) VDS Drain-Source Voltage (V) One active die Two active die Derating Curve Max Power Dissipation (W) Temperature ( o D=0.2 D=0.5 D=0.1 Transient Thermal Impedance Single Pulse D=0.05 Thermal Resistance ( o C/W) Pulse Width (s) Single Pulse Tamb= 25 o C One active die Pulse Power Dissipation Maximum Power (W) Pulse Width (s) Single Pulse Tamb= 25 o C One active die DC 100ms RDS(ON) Limited P-channel Safe Operating Area -VDS Drain-Source Voltage (V) -ID Drain Current (A) 10ms 1ms 100us
Document number: DS32121 Rev. 6 - 2 4 of 11 www.diodes.com April 2020 © Diodes Incorporated DMC2020USD Electrical Characteristics – Q1 N-CHANNEL (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS 20 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS — — 1.0 A VDS = 20V, VGS = 0V Gate-Source Leakage IGSS — — ±10 A VGS = ±10V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) 0.5 1.1 1.5 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance (Note 11) RDS (ON) — 13 20 mΩ VGS = 4.5V, ID = 7A 18 28 VGS = 2.5V, ID = 3A Forward Transfer Admittance (Notes 11 & 12) |Yfs| — 16 — S VDS = 5V, ID = 9.4A Diode Forward Voltage (Note 11) VSD — 0.7 1.2 V VGS = 0V, IS = 1.3A Continuous Source Current IS — — 1.8 A — DYNAMIC CHARACTERISTICS (Note 12) Input Capacitance Ciss — 1149 — pF VDS = 10V, VGS = 0V, f = 1.0MHz Output Capacitance Coss — 157 — Reverse Transfer Capacitance Crss — 142 — Gate Resistance Rg — 1.51 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (Note 13) Qg — 6.0 — nC VGS = 2.5V VDS = 10V ID = 9.4A Total Gate Charge (Note 13) Qg — 11.6 — VGS = 4.5V Gate-Source Charge (Note 13) Qgs — 2.7 — Gate-Drain Charge (Note 13) Qgd — 3.4 — Turn-On Delay Time (Note 13) tD(on) — 11.67 — Turn-On Rise Time (Note 13) tr — 12.49 — ns VGS = 4.5V, VDS = 10V, RG = 6Ω , ID = 1A Turn-Off Delay Time (Note 13) tD(off) — 35.89 — Turn-Off Fall Time (Note 13) tf — 12.33 — Notes: 11. Measured under pulsed conditions. Pulse width 300s; duty cycle 2% 12. For design aid only, not subject to production testing. 13. Switching characteristics are independent of operating junction temperatures.
Document number: DS32121 Rev. 6 - 2 5 of 11 www.diodes.com April 2020 © Diodes Incorporated DMC2020USD Typical Characteristics – Q1 N-CHANNEL 0 0.5 1 1.5 2 Fig. 1 Typical Output Characteristics V , DRAIN-SOURCE VOLTAGE (V)DS I , DRAIN CURRENT (A)D V = 1.8VGS V = 2.0VGS V = 2.5VGS V = 3.0VGS V = 3.5VGS V = 4.0VGS V = 4.5VGS V = 10VGS 0.01 0.02 0.03 0.04 0 5 10 15 20 25 30 Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage I , DRAIN-SOURCE CURRENT (A)D R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) V = 4.5VGS V = 2.5VGS 0 0.5 1 1.5 2 2.5 3 Fig. 2 Typical Transfer Characteristics V , GATE SOURCE VOLTAGE (V) GS V = 5V DS T = -55° C A T = 25° C A T = 125° C A T = 150° C A T = 85° C A 0 5 10 15 20 I , DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature D 0.01 0.02 0.03 0.04 V = 4.5V GS T = -55° C A T = 25° C A T = 85° C A T = 125° C A T = 150° C A 0.6 0.8 1.0 1.2 1.4 1.6 Fig. 5 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (° C) J V = 2.5V I = 5A GS D V = 4.5V I = 10A GS D Fig. 6 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (° C) J 0.01 0.02 0.03 0.04 V = 4.5V I = 10A GS D V = 2.5V I = 5A GS D RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) ID, DRAIN CURRENT(A) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON- RESISTANCE (NORMALIZED)
Document number: DS32121 Rev. 6 - 2 6 of 11 www.diodes.com April 2020 © Diodes Incorporated DMC2020USD 100 1,000 10,000 0 4 8 12 16 20 Fig. 9 Typical Capacitance V , DRAIN-SOURCE VOLTAGE (V)DS C, CAPACITANCE (pF) f = 1MHz Ciss Coss Crss 0 5 10 15 20 25 Q , OTAL GATE CHARGE (nC) Fig. 11 Gate-Source Voltage vs. Total Gate Charge g T 10V , ATE-SOURCE VOLTAGE (V)GS G V = 10V I = 9.4A DS D 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Fig. 7 Gate Threshold Variation vs. Ambient Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (° C) A I = 1mA D I = 250 µA D V , SOURCE-DRAIN VOLTAGE (V) SD Fig. 8 Diode Forward Voltage vs. Current T = 25 °C A 0 5 10 15 20 Fig. 10 Typical Drain-Source Leakage Current vs. Drain-Source Voltage V , DRAIN-SOURCE VOLTAGE (V) DS 100 1,000 100,000 10,000 T = 25° C A T = 85° C A T = 125° C A T = 150° C A IDSS, DRAIN-SOURCE LEAKAGE CURRENT(nA) VGS(TH), GATE THRESHOLD VOLTAGE(V) IS, SOURCE CURRENT(A)
Document number: DS32121 Rev. 6 - 2 7 of 11 www.diodes.com April 2020 © Diodes Incorporated DMC2020USD Electrical Characteristics – Q2 P-CHANNEL (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS -20 — — V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current IDSS — — -1.0 A VDS = -20V, VGS = 0V Gate-Source Leakage IGSS — — ±10 A VGS = ±8V, VDS = 0V ON CHARACTERISTICS (Note 10) Gate Threshold Voltage VGS(th) -0.4 -0.7 -1.0 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance (Note 14) RDS (ON) 26 33 mΩ VGS = -4.5V, ID = -6A 33 45 VGS = -2.5V, ID = -3A Forward Transfer Admittance (Note 14 & 15) |Yfs| — 14 — S VDS = -5V, ID = -4A Diode Forward Voltage (Note 14) VSD — -0.7 -1.0 V VGS = 0V, IS = -1A Continuous Source Current IS — — -1.8 A - DYNAMIC CHARACTERISTICS (Note 15) Input Capacitance Ciss — 1610 — pF VDS = -10V, VGS = 0V, f = 1.0MHz Output Capacitance Coss — 157 — Reverse Transfer Capacitance Crss — 145 — Gate Resistance Rg — 9.45 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (Note 16) Qg — 8.0 — nC VGS = -2.5V VDS = -10V ID = -4A Total Gate Charge (Note 16) Qg — 15.4 — VGS = -4.5V Gate-Source Charge (Note 16) Qgs — 2.5 — Gate-Drain Charge (Note 16) Qgd — 3.3 — Turn-On Delay Time (Note 16) tD(on) — 16.8 — ns VGS = -4.5V, VDS = -10V, RG = 6Ω , ID = -1A Turn-On Rise Time (Note 16) tr — 12.4 — Turn-Off Delay Time (Note 16) tD(off) — 94.1 — Turn-Off Fall Time (Note 16) tf — 42.4 — Notes: 14. Measured under pulsed conditions. Pulse width 300s; duty cycle 2% 15. For design aid only, not subject to production testing. 16. Switching characteristics are independent of operating junction temperatures.
Document number: DS32121 Rev. 6 - 2 8 of 11 www.diodes.com April 2020 © Diodes Incorporated DMC2020USD Typical Characteristics – Q2 P-CHANNEL 0 0.5 1.0 1.5 2.0 Fig. 12 Typical Output Characteristics -V , DRAIN-SOURCE VOLTAGE (V)DS 30-I , DRAIN CURRENT (A)D V = -1.8VGS V = -2.0VGS V = -2.5VGS V = -3.0VGS V = -3.5VGS V = -4.0VGS V = -4.5VGS V = -10VGS 0.01 0.02 0.03 0.04 0.05 0.06 0 5 10 15 20 25 30 Fig. 14 Typical On-Resistance vs. Drain Current and Gate Voltage -I , DRAIN-SOURCE CURRENT (A)D R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) -V = 2.5VGS -V = 4.5VGS 0 0.5 1 1.5 2 2.5 3 Fig. 13 Typical Transfer Characteristics -V , GATE SOURCE VOLTAGE (V) GS V = -5V DS T = -55° C A T = 25° C A T = 125° C A T = 150° C A T = 85° C A -ID, DRAIN CURRENT(A) 0 5 10 15 20 -I , DRAIN CURRENT (A) Fig. 15 Typical Drain-Source On-Resistance vs. Drain Current and Temperature D 0.01 0.02 0.03 0.04 0.05 0.06 V = 4.5V GS T = -55° C A T = 25° C A T = 85° C A T = 125° C A T = 150° C A Fig. 17 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (° C) J 0.01 0.02 0.03 0.04 0.05 0.06 -V = 4.5V -I = 10A GS D -V = 2.5V -I = 5A GS D RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) Fig. 16 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (° C) J 0.6 0.8 1.0 1.2 1.4 1.6 -V = 4.5V -I = 10A GS D -V = 2.5V -I = 5A GS D RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON- RESISTANCE (NORMALIZED)
Document number: DS32121 Rev. 6 - 2 9 of 11 www.diodes.com April 2020 © Diodes Incorporated DMC2020USD 100 1,000 10,000 0 4 8 12 16 20 Fig. 20 Typical Capacitance -V , DRAIN-SOURCE VOLTAGE (V)DS C, CAPACITANCE (pF) f = 1MHz Ciss Coss Crss 0 5 10 15 20 25 30 35 Q , OTAL GATE CHARGE (nC) Fig. 22 Gate-Source Voltage vs. Total Gate Charge g T -V , ATE-SOURCE VOLTAGE (V)GS G V = -10V I = -4A DS D Fig. 18 Gate Threshold Variation vs. Ambient Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (° C) A 0.2 0.4 0.6 0.8 1.0 1.2 -I = 1mA D -I = 250µ A D -V , SOURCE-DRAIN VOLTAGE (V) SD Fig. 19 Diode Forward Voltage vs. Current T = 25° C A 0 5 10 15 20 Fig. 21 Typical Drain-Source Leakage Current vs. Drain-Source Voltage -V , DRAIN-SOURCE VOLTAGE (V) DS 100 1,000 100,000 10,000 T = 25° C A T = 85° C A T = 125° C A T = 150° C A -IDSS, DRAIN-SOURCE LEAKAGE CURRENT(nA) VGS(TH), GATE THRESHOLD VOLTAGE(V) -IS, SOURCE CURRENT(A)
Document number: DS32121 Rev. 6 - 2 10 of 11 www.diodes.com April 2020 © Diodes Incorporated DMC2020USD Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 Dim Min Max A - 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h - 0.35 L 0.62 0.82 0 8 All Dimensions in mm Dimensions Value (in mm) X 0.60 Y 1.55 C1 5.4 C2 1.27 X Y
Document number: DS32121 Rev. 6 - 2 11 of 11 www.diodes.com April 2020 © Diodes Incorporated DMC2020USD IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DO CUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifica tions, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability a rising out of the application or use of this document or any produc t described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless agai nst all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple langu ages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support o r sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products i n such safety -critical, life support devices or systems, notwithstanding any devices - or systems -related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2020, Diodes Incorporated www.diodes.com