DMC2004DWK
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 8
Technical content
Features
Low On-Resistance Low Gate Threshold Voltage VGS(th) 1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair MOSFET Ultra-Small Surface Mount Package ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 2 & 3) Halogen and Antimony Free. “Green” Device (Note 4) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Mechanical Data Case: SOT-363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking Information: See Page 7 Ordering & Date Code Information: See Page 7 Weight: 0.006 grams (approximate) Maximum Ratings N-CHANNEL – Q1 @TA = 25° C unless otherwise specified Characteristic Symbol Value Unit Drain Source Voltage VDSS 20 V Gate-Source Voltage VGSS 8 V Drain Current (Note 1) TA = 25° C TA = 85° C ID 540 390 mA Maximum Ratings P-CHANNEL – Q2 @TA = 25° C unless otherwise specified Characteristic Symbol Value Unit Drain Source Voltage VDSS -20 V Gate-Source Voltage VGSS 8 V Drain Current (Note 1) TA = 25° C TA = 85° C ID -430 -310 mA Thermal Characteristics – Total Device @TA = 25° C unless otherwise specified Characteristic Symbol Value Unit Power Dissipation (Note 1) Pd 250 mW Thermal Resistance, Junction to Ambient RJA 500 C/W Operating and Storage Temperature Range Tj, TSTG -65 to +150 C Notes: 1. Device mounted on FR-4 PCB. 2. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 3. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 4. Halogen- and Antimony-free "Green” products are defined as those which contain < 900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. SOT-363 TOP VIEW Internal Schematic TOP VIEW ESD protected Q1 Q2
Document number: DS31114 Rev. 5 - 2 2 of 8 www.diodes.com October 2019 © Diodes Incorporated NEW PRODUCT DMC2004DWK Electrical Characteristics N-CHANNEL – Q1 @TA = 25° C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BVDSS 20 V VGS = 0V, ID = 10A Zero Gate Voltage Drain Current IDSS 1 A VDS = 16V, VGS = 0V Gate-Source Leakage IGSS 1 A VGS = ± 4.5V, VDS = 0V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(th) 0.5 1.0 V VDS = VGS, ID = 250A Static Drain-Source On-Resistance RDS (ON) 0.4 0.5 0.7 0.55 0.70 0.90 VGS = 4.5V, ID = 540mA VGS = 2.5V, ID = 500mA VGS = 1.8V, ID = 350mA Forward Transfer Admittance |Yfs| 200 mS VDS =10V, ID = 0.2A Diode Forward Voltage (Note 5) VSD 0.5 1.2 V VGS = 0V, IS = 115mA DYNAMIC CHARACTERISTICS Input Capacitance Ciss 150 pF VDS = 16V, VGS = 0V f = 1.0MHz Output Capacitance Coss 25 pF Reverse Transfer Capacitance Crss 20 pF Electrical Characteristics P-CHANNEL – Q2 @TA = 25° C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BVDSS -20 V VGS = 0V, ID = -250A Zero Gate Voltage Drain Current IDSS -1.0 A VDS = -20V, VGS = 0V Gate-Source Leakage IGSS 1.0 A VGS = ± 4.5V, VDS = 0V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(th) -0.5 -1.0 V VDS = VGS, ID = -250A Static Drain-Source On-Resistance RDS (ON) 0.7 1.1 1.7 0.9 1.4 2.0 VGS = -4.5V, ID = -430mA VGS = -2.5V, ID = -300mA VGS = -1.8V, ID = -150mA Forward Transfer Admittance |Yfs| 200 mS VDS =10V, ID = 0.2A Diode Forward Voltage (Note 5) VSD -0.5 -1.2 V VGS = 0V, IS = -115mA DYNAMIC CHARACTERISTICS Input Capacitance Ciss 175 pF VDS = -16V, VGS = 0V f = 1.0MHz Output Capacitance Coss 30 pF Reverse Transfer Capacitance Crss 20 pF Notes: 5. Short duration pulse test used to minimize self-heating effect.
Document number: DS31114 Rev. 5 - 2 3 of 8 www.diodes.com October 2019 © Diodes Incorporated NEW PRODUCT DMC2004DWK Q1, N-CHANNEL V , DRAIN SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics DS I , DRAIN CURRENT (A)D V , GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics GS I , DRAIN CURRENT (A)D T , AMBIENT TEMPERATURE ( 癈 ) Fig. 3 Gate Threshold Voltage vs. Ambient Temperature A V , GATE THRESHOLD VOLTAGE (V)GS(th) I , DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current D I , DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current D I , DRAIN-SOURCE CURRENT (A) Fig. 6 Static Drain-Source On-Resistance vs. Drain-Source Current vs. Gate Source Voltage D TA, AMBIENT TEMPERATURE (C)
Document number: DS31114 Rev. 5 - 2 4 of 8 www.diodes.com October 2019 © Diodes Incorporated NEW PRODUCT DMC2004DWK Q1, N-CHANNEL (continued) T , AMBIENT TEMPERATURE ( 癈 ) Fig. 7 Static Drain-Source On-State Resistance vs. Ambient Temperature A V , DRAIN-SOURCE VOLTAGE (V) Fig. 8 Reverse Drain Current vs. Source-Drain Voltage SD I , DRAIN CURRENT (A) Fig. 9 Forward Transfer Admittance vs. Drain Current D V , DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Capacitance DS TA, AMBIENT TEMPERATURE (C)
Document number: DS31114 Rev. 5 - 2 5 of 8 www.diodes.com October 2019 © Diodes Incorporated NEW PRODUCT DMC2004DWK Q2, P-CHANNEL -V , DRAIN SOURCE VOLTAGE (V) Fig. 11 Typical Output Characteristics DS -I , DRAIN CURRENT (A)D -V , GATE SOURCE VOLTAGE (V) Fig. 12 Typical Transfer Characteristics GS -I , DRAIN CURRENT (A)D T , AMBIENT TEMPERATURE ( 癈 ) Fig. 13 Gate Threshold Voltage vs. Ambient Temperature A -V , GATE THRESHOLD VOLTAGE (V)GS(th) -I , DRAIN-SOURCE CURRENT (A) Fig. 14 Static Drain-Source On-Resistance vs. Drain Current D -I , DRAIN-SOURCE CURRENT (A) Fig. 15 Static Drain-Source On-Resistance vs. Drain Current D -I , DRAIN-SOURCE CURRENT (A) Fig. 16 Static Drain-Source On-Resistance vs. Drain-Source Current vs. Gate Source Voltage D TA, AMBIENT TEMPERATURE (C)
Document number: DS31114 Rev. 5 - 2 6 of 8 www.diodes.com October 2019 © Diodes Incorporated NEW PRODUCT DMC2004DWK Q2, P-CHANNEL (continued) T , AMBIENT TEMPERATURE ( 癈 ) Fig. 17 Static Drain-Source On-State Resistance vs. Ambient Temperature A -V , SOURCE-DRAIN VOLTAGE (V) Fig. 18 Reverse Drain Current vs. Source-Drain Voltage DS -I , DRAIN CURRENT (A) Fig. 19 Forward Transfer Admittance vs. Drain Current D -V , DRAIN-SOURCE VOLTAGE (V) Fig. 20 Typical Capacitance DS TA, AMBIENT TEMPERATURE (C)
Document number: DS31114 Rev. 5 - 2 7 of 8 www.diodes.com October 2019 © Diodes Incorporated NEW PRODUCT DMC2004DWK Ordering Information (Note 6) Part Number Case Packaging DMC2004DWK-7 SOT-363 3000/Tape & Reel Notes: 6. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information Date Code Key Year 2007 2008 2009 2010 2011 2012 Code U V W X Y Z Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 0 8° All Dimensions in mm Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C 1.9 E 0.65 CAB = Marking Code YM = Date Code Marking Y = Year ex: U = 2007 M = Month ex: 9 = September CAB YM A M J LD B C H K F X Z Y C EE G
Document number: DS31114 Rev. 5 - 2 8 of 8 www.diodes.com October 2019 © Diodes Incorporated NEW PRODUCT DMC2004DWK IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTI CULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license unde r its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Di odes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product name s and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or system s without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in t he labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety -critical, life support devices or systems, notwithstanding any devices - or systems -related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporat ed and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2019, Diodes Incorporated www.diodes.com