DMC10H220LSD DIODES | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 10
Technical content
Document number: DS43379 Rev. 2 - 2 1 of 10 www.diodes.com November 2021 © Diodes Incorporated DMC10H220LSD ADVANCE INFORMATION NEW PRODUCT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BVDSS RDS(ON) Max ID TA = +25°C N-Channel 100V 220mΩ @ VGS = 10V 1.7A 260mΩ @ VGS = 4.5V 1.6A P-Channel -100V 250mΩ @ VGS = -10V -1.7A 300mΩ @ VGS = -4.5V -1.6A Description and Applications This new generation MOSFET has been designed to minimize the on- state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. DC-DC Converters Power Management Functions Backlighting Features and Benefits 100% Unclamped Inductive Switch (UIS) Test in Production Low Input Capacitance Low On-Resistance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Mechanical Data Package: SO-8 Package Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (Approximate) Ordering Information (Note 4) Part Number Package Packing Qty. Carrier DMC10H220LSD-13 SO-8 2,500 Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions o f Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information Top View SO-8 Top View Pin Configuration D S G D S G Q1 N-Channel MOSFET Q2 P-Channel MOSFET Pin1 D1S1 = Manufacturer’s Marking C10H2SD = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 21 = 2021) WW = Week (01 to 53) SO-8 1 4 8 5 N6070SD WW YY C10H2SD
Document number: DS43379 Rev. 2 - 2 2 of 10 www.diodes.com November 2021 © Diodes Incorporated DMC10H220LSD ADVANCE INFORMATION NEW PRODUCT Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Q1 Q2 Unit Drain-Source Voltage VDSS 100 -100 V Gate-Source Voltage VGSS ±20 ±20 V Continuous Drain Current (Note 6) N-Channel: VGS = 10V P-Channel: VGS = -10V Steady State TA = +25° C TA = +70° C ID 1.7 1.4 -1.7 -1.4 A Maximum Body Diode Forward Current (Note 6) IS 1.7 -1.7 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 9 -13 A Avalanche Current, L = 0.1mH IAS 3.2 -11 A Avalanche Energy, L = 0.1mH EAS 0.5 6 mJ Thermal Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 5) PD 1 W Thermal Resistance, Junction to Ambient (Note 5) Steady State RθJA 110 ° C/W Total Power Dissipation (Note 6) PD 1.5 W Thermal Resistance, Junction to Ambient (Note 6) Steady State RθJA 80 ° C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics N-Channel Q1 (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 100 V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS 1 µA VDS = 100V, VGS = 0V Gate-Source Leakage IGSS ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) 1 3 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance RDS(ON) 170 220 mΩ VGS = 10V, ID = 1.6A 210 260 VGS = 4.5V, ID = 1.3A Diode Forward Voltage VSD 0.7 1.2 V VGS = 0V, IS = 1.1A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss 340 pF VDS = 50V, VGS = 0V f = 1MHz Output Capacitance Coss 18 Reverse Transfer Capacitance Crss 12 Gate Resistance Rg 2.1 Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = 4.5V) Qg 4.1 nC VDS = 50V, ID = 1.6A Total Gate Charge (VGS = 10V) Qg 8.3 Gate-Source Charge Qgs 1.5 Gate-Drain Charge Qgd 2 Turn-On Delay Time tD(ON) 6.8 ns VDS = 50V, VGS = 4.5V, RG = 6.8ΩID = 1A Turn-On Rise Time tR 8.2 Turn-Off Delay Time tD(OFF) 7.9 Turn-Off Fall Time tF 3.6 Body Diode Reverse Recovery Time tRR 17 ns IF = 1.1A, di/dt =100A/μs Body Diode Reverse Recovery Charge QRR 9.8 nC Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing.
Document number: DS43379 Rev. 2 - 2 3 of 10 www.diodes.com November 2021 © Diodes Incorporated DMC10H220LSD ADVANCE INFORMATION NEW PRODUCT Electrical Characteristics P-Channel Q2 (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS -100 V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS -1 µ A VDS = -100V, VGS = 0V Gate-Source Leakage IGSS ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) -1.0 -3.0 V VDS = VGS, ID = -250µA Static Drain-Source On-Resistance RDS(ON) 200 250 mΩ VGS = -10V, ID = -1A 210 300 VGS = -4.5V, ID =-1A Diode Forward Voltage VSD -0.9 -1.2 V VGS = 0V, IS = -1A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss 1030 pF VDS = -50V, VGS = 0V, f = 1.0MHz Output Capacitance Coss 33 Reverse Transfer Capacitance Crss 24 Gate Resistance Rg 13 Ω VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge (VGS = -4.5V) Qg 8.4 nC VDS = -60V, ID = -1A Total Gate Charge (VGS = -10V) Qg 17.5 Gate-Source Charge Qgs 2.8 Gate-Drain Charge Qgd 3.2 Turn-On Delay Time tD(ON) 9.1 ns VDD = -50V, RG = 9.1Ω, ID = -1A Turn-On Rise Time tR 14.9 Turn-Off Delay Time tD(OFF) 57.4 Turn-Off Fall Time tF 34.4 Body Diode Reverse Recovery Time tRR 25.2 ns VGS = 0V, IS = -1A, di/dt = 100A/μs Body Diode Reverse Recovery Charge QRR 24.5 nC VGS = 0V, IS = -1A, di/dt = 100A/μs Notes: 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing.
Figure 25. Transient Thermal Resistance
Document number: DS43379 Rev. 2 - 2 9 of 10 www.diodes.com November 2021 © Diodes Incorporated DMC10H220LSD ADVANCE INFORMATION NEW PRODUCT Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 SO-8 Dim Min Max Typ A 1.40 1.50 1.45 A1 0.10 0.20 0.15 b 0.30 0.50 0.40 c 0.15 0.25 0.20 D 4.85 4.95 4.90 E 5.90 6.10 6.00 E1 3.80 3.90 3.85 E0 3.85 3.95 3.90 e -- -- 1.27 h -- -- 0.35 L 0.62 0.82 0.72 Q 0.60 0.70 0.65 All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 Dimensions Value (in mm) C 1.27 X 0.802 X1 4.612 Y 1.505 Y1 6.50 b e E A 9° ( All sides) 4° ±3° c Q h 45° R 0.1 D L Seating Plane Gauge Plane C X Y
Document number: DS43379 Rev. 2 - 2 10 of 10 www.diodes.com November 2021 © Diodes Incorporated DMC10H220LSD ADVANCE INFORMATION NEW PRODUCT IMPORTANT NOTICE 1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safe ty and functional - safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation , quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities. 4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document. 5. Diodes products are provided subject to Diodes’ Standard Terms and Conditions of Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/) or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 6. Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sal e is prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any da mages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this docume nt is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the for egoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion h ereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. Copyright © 2021 Diodes Incorporated www.diodes.com