DMC1028UFDB

DMC1028UFDB

Document overview

• Manufacturer or author: Diodes Incorporated
• PDF pages: 11

Technical content

Features

 Low On-Resistance  Low Input Capacitance  Low Profile, 0.6mm Max Height  ESD HBM Protected up to 1.5kV, MM Protected up to 150V  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Mechanical Data  Case: U-DFN2020-6  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208  Terminals Connections: See Diagram Below  Weight: 0.0065 grams (Approximate) Ordering Information (Note 4) Part Number Case Packaging DMC1028UFDB-7 U-DFN2020-6 (Type B) 3,000/Tape & Reel DMC1028UFDB-13 U-DFN2020-6 (Type B) 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Gate Protection Diode ESD PROTECTED Gate Protection Diode Bottom View Internal Schematic Pin1 N-CHANNEL MOSFET P-CHANNEL MOSFET U-DFN2020-6 (Type B)

Document number: DS37634 Rev. 5 - 2 2 of 11 www.diodes.com February 2020 © Diodes Incorporated DMC1028UFDB Marking Information Site 1 Date Code Key Year 2014 … 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029 Code B … H I J K L M N O P R Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Site 2 Date Code Key Year 2014 … 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029 Code 4 … 0 1 2 3 4 5 6 7 8 9 Week 1-26 27-52 53 Code A-Z a-z z Internal Code Sun Mon Tue Wed Thu Fri Sat Code T U V W X Y Z D8 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: H = 2020) M = Month (ex: 9 = September) YM YWX D8 = Product Type Marking Code YWX = Date Code Marking Y = Year (ex: 0 = 2020) W = Week (ex: a = Week 27; z Represents Week 52 and 53) X = Internal Code (ex: U = Monday)

Document number: DS37634 Rev. 5 - 2 3 of 11 www.diodes.com February 2020 © Diodes Incorporated DMC1028UFDB Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Q1 N-CHANNEL P-CHANNEL Unit Drain-Source Voltage VDSS 12 -20 V Gate-Source Voltage VGSS ±8 ±8 V Continuous Drain Current (Note 5) N-Channel: VGS = 4.5V P-Channel: VGS = -4.5V Steady State TA = +25°C TA = +70°C ID 6.0 4.8 -3.4 -2.7 A t < 5s TA = +25°C TA = +70°C ID 7.1 5.7 -4.0 -3.2 A Maximum Continuous Body Diode Forward Current (Note 5) IS 1.4 -1.4 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 40 -20 A Avalanche Current L = 0.1mH IAS 12 -12 A Avalanche Energy L = 0.1mH EAS 8.4 7.5 mJ Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) Steady State PD 1.36 W t < 5s 1.89 Thermal Resistance, Junction to Ambient (Note 5) Steady State RθJA 92 ° C/W t < 5s 66 Thermal Resistance, Junction to Case (Note 5) RθJC 19 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Note: 5. Device mounted on 1”  1” FR-4 PCB with high coverage 2oz. Copper, single sided. Electrical Characteristics Q1 N-CHANNEL (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BVDSS 12 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current TJ = +25° C IDSS — — 1.0 μA VDS = 12V, VGS = 0V Gate-Source Leakage IGSS — — ±10 μA VGS = ±8V, VDS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(TH) 0.4 — 1 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) — 17 25 mΩ VGS = 4.5V, ID = 5.2A — 19 30 VGS = 3.3V, ID = 5.0A — 21 32 VGS = 2.5V, ID = 4.8A — 30 40 VGS = 1.8V, ID = 2.5A Diode Forward Voltage VSD — 0.7 1.2 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Ciss — 787 — pF VDS = 6V, VGS = 0V, f = 1.0MHz Output Capacitance Coss — 203 — pF Reverse Transfer Capacitance Crss — 177 — pF Gate Resistance Rg — 4.8 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = 3.3V) Qg — 7.9 — nC VDS = 6V, ID = 6.8A Total Gate Charge (VGS = 4.5V) — 10.5 — nC Total Gate Charge (VGS = 8V) — 18.5 — nC Gate-Source Charge Qgs — 1.2 — nC Gate-Drain Charge Qgd — 2.9 — nC Turn-On Delay Time tD(ON) — 4.6 — ns VDD = 6V, VGS = 4.5V, RL = 1.1Ω, RG = 1Ω Turn-On Rise Time tR — 9.4 — ns Turn-Off Delay Time tD(OFF) — 15.7 — ns Turn-Off Fall Time tF — 3.7 — ns Body Diode Reverse Recovery Time tRR — 12.0 — ns IS = 5.4A, dI/dt = 100A/μs Body Diode Reverse Recovery Charge QRR — 1.8 — nC IS = 5.4A, dI/dt = 100A/μs Notes: 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing.

Document number: DS37634 Rev. 5 - 2 4 of 11 www.diodes.com February 2020 © Diodes Incorporated DMC1028UFDB Electrical Characteristics Q2 P-CHANNEL (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BVDSS -20 — — V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current TJ = +25° C IDSS — — -1.0 μA VDS = -20V, VGS = 0V Gate-Source Leakage IGSS — — ±10 μA VGS = ±8V, VDS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(TH) -0.4 — -1 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS(ON) — 55 80 mΩ VGS = -4.5V, ID = -3.8A — 70 100 VGS = -2.5V, ID = -3.3A — 88 140 VGS = -1.8V, ID = -1.0A — 110 210 VGS = -1.5V, ID = -0.5A Diode Forward Voltage VSD — -0.7 -1.2 V VGS = 0V, IS = -1A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Ciss — 576 — pF VDS = -10V, VGS = 0V, f = 1.0MHz Output Capacitance Coss — 87 — pF Reverse Transfer Capacitance Crss — 71 — pF Gate Resistance Rg — 15 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = -3.3V) Qg — 5.2 — nC VDS = -10V, ID = -4.9A Total Gate Charge (VGS = -4.5V) — 6.7 — nC Total Gate Charge (VGS = -8V) — 11.5 — nC Gate-Source Charge Qgs — 1.0 — nC Gate-Drain Charge Qgd — 2.0 — nC Turn-On Delay Time tD(ON) — 3.5 — ns VDD = -10V, VGS = -4.5V, RL = 2.6Ω, RG = 1Ω Turn-On Rise Time tR — 3.6 — ns Turn-Off Delay Time tD(OFF) — 20.8 — ns Turn-Off Fall Time tF — 12.7 — ns Body Diode Reverse Recovery Time tRR — 13.1 — ns IS = -3.9A, dI/dt = 100A/μs Body Diode Reverse Recovery Charge QRR — 3.9 — nC IS = -3.9A, dI/dt = 100A/μs Notes: 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing.

Document number: DS37634 Rev. 5 - 2 9 of 11 www.diodes.com February 2020 © Diodes Incorporated DMC1028UFDB Typical Application Circuit DMC1028UFDB is designed for Point-of-Load (POL) converter that is stepping down from a nominal 3.3V to 1V with a load current up to 3A. This is implemented with a separate ASIC that is PWM signaling the complementary MOSFETs to act as a synchronous buck converter. T he control switch (Q2) is implemented with P-channel MOSFETs to avoid needing a charge pump and with the 3.3V to 1V step down, which has a duty cycle of 33%. This means that for 67% of the cycle, the synchronous switch (Q1) is on and efficiency is dominated by the conduction losses; hence, the need for low R DS(ON) N-channel MOSFETs. Whereas for the control switch (Q2) , the gate charge needs to be minimized as the switching losses become significant. 0.001 0.01 0.1 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 r(t), TRANSIENT THERMAL RESISTANCE t1, PULSE DURATION TIME (sec) Figure 25 Transient Thermal Resistance RθJA(t)=r(t) * RθJA RθJA=166℃/W Duty Cycle, D=t1/t2D=Single Pulse D=0.005 D=0.01 D=0.02 D=0.05 D=0.1 D=0.3 D=0.5 D=0.7 D=0.9

Document number: DS37634 Rev. 5 - 2 10 of 11 www.diodes.com February 2020 © Diodes Incorporated DMC1028UFDB Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN2020-6 (Type B) Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN2020-6 (Type B) R0.150 A A1 Seating Plane E b (Pin #1 ID) e L D k z C Y2 Y1(2x) X Y G X1(2x) U-DFN2020-6 Type B Dim Min Max Typ A 0.545 0.605 0.575 A1 0.00 0.05 0.02 A3 - - 0.13 b 0.20 0.30 0.25 D 1.95 2.075 2.00 D2 0.50 0.70 0.60 e - - 0.65 E 1.95 2.075 2.00 E2 0.90 1.10 1.00 k - - 0.45 L 0.25 0.35 0.30 z - - 0.225 z1 - - 0.175 All Dimensions in mm Dimensions Value (in mm) C 0.650 G 0.150 G1 0.450 X 0.350 X1 0.600 X2 1.650 Y 0.500 Y1 1.000 Y2 2.300

Document number: DS37634 Rev. 5 - 2 11 of 11 www.diodes.com February 2020 © Diodes Incorporated DMC1028UFDB IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license unde r its patent or trademark rights, nor the rights of others. Any Customer or user of th is document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diod es Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product name s and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the ex press written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety -critical, life support devices or systems, notwithstanding any devices - or systems -related information or support that may be provided by Diodes Incor porated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2020, Diodes Incorporated www.diodes.com