DMC1015UPD
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 11
Technical content
Document number: DS37992 Rev. 5 - 2 1 of 11 www.diodes.com August 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. DMC1015UPD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Device BVDSS RDS(ON) ID TA = +25° C Q1 12V 17mΩ @ VGS = 4.5V 9.5A 25mΩ @ VGS = 2.5V 7.8A Q2 -20V 35mΩ @ VGS = -4.5V -6.8A 55mΩ @ VGS = -2.5V -5.3A Description and Applications This new generation complementary pair enhancement mode MOSFET has been designed to minimize R DS(ON) yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch. Notebook battery power management DC-DC converters Load switches Features and Benefits Thermally Efficient Package – Cooler Running Applications High Conversion Efficiency Low RDS(ON) – Minimizes On-State Losses Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotive- products/. This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/ Mechanical Data Package: PowerDI®5060-8 Package Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – 100% Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Below Weight: 0.097 grams (Approximate) Site 1: Site 2: Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Bottom View Top View Pin Configuration Top View PowerDI5060-8 (Type C) Q1 N-Channel MOSFET Q2 P-Channel MOSFET Pin1 Bottom View Top View Q1 N-Channel MOSFET Q2 P-Channel MOSFET Top View Pin Configuration Pin 1 PowerDI5060-8 (SWP) (Type R)
Document number: DS37992 Rev. 5 - 2 2 of 11 www.diodes.com August 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. DMC1015UPD Ordering Information (Note 4) Part Number Package Packing Qty. Carrier DMC1015UPD-13 PowerDI5060-8 (Type C) 2500 Tape & Reel DMC1015UPD-13 PowerDI5060-8 (SWP) (Type R) 2500 Tape & Reel Note: 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Q1 Value Q2 Value Unit Drain-Source Voltage VDSS 12 -20 V Gate-Source Voltage VGSS ±8 ±8 V Continuous Drain Current (Note 5) VGS = 4.5V Steady State TA = +25° C TA = +70° C ID 9.5 7.6 -6.8 -5.4 A t < 10s TA = +25° C TA = +70° C ID 13.0 10.4 -9.4 -7.5 A Maximum Body Diode Forward Current (Note 5) IS 2.4 -2.2 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 65 -35 A Avalanche Current (Note 6) L = 0.1mH IAS 22 -20 A Avalanche Energy (Note 6) L = 0.1mH EAS 25 20 mJ Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) TA = +25° C PD 2.3 W TA = +70°C 1.5 Thermal Resistance, Junction to Ambient (Note 5) Steady State RθJA 56 ° C/W t < 10s 29 Thermal Resistance, Junction to Case RθJC 5.4 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. IAS and EAS ratings are based on low frequency and duty cycles to keep T J = +25°C. G1 S2 G2 D1 D2 D2 C1015UD YY WW = Manufacturer’s Marking C1015UD = Product Type Marking Code YYWW or YYWW = Date Code Marking YY or YY = Year (ex: 23 = 2023) WW = Week (01 to 53)
Document number: DS37992 Rev. 5 - 2 3 of 11 www.diodes.com August 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. DMC1015UPD Electrical Characteristics Q1 N-Channel (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 12 V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS 1 µA VDS = 12V, VGS = 0V Gate-Source Leakage IGSS 100 nA VGS = ±8V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) 0.6 0.8 1.5 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance RDS(ON) 9.6 17 mΩ VGS = 4.5V, ID = 11.8A 11 25 VGS = 2.5V, ID = 9.8A Diode Forward Voltage VSD 0.7 1.2 V VGS = 0V, IS = 2.9A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss 1495 pF VDS = 6V, VGS = 0V, f = 1.0MHz Output Capacitance Coss 310 Reverse Transfer Capacitance Crss 285 Gate Resistance Rg 1.6 Ω VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge (VGS = 3.3V) Qg 11.5 nC VDS = 6V, ID = 11.8A Total Gate Charge (VGS = 4.5V) Qg 15.6 Gate-Source Charge Qgs 2.3 Gate-Drain Charge Qgd 4.6 Turn-On Delay Time tD(ON) 5.7 ns VDD = 6V, RL = 6Ω, VGS = 4.5V, Rg = 6Ω, ID = 1A Turn-On Rise Time tR 10.1 Turn-Off Delay Time tD(OFF) 40.4 Turn-Off Fall Time tF 22.5 Body Diode Reverse-Recovery Time tRR — 16.4 — ns IF = 2.9A, di/dt = 100A/μs Body Diode Reverse-Recovery Charge QRR — 3.2 — nC IF = 2.9A, di/dt = 100A/μs Electrical Characteristics Q2 P-Channel (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note7) Drain-Source Breakdown Voltage BVDSS -20 — — V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current IDSS — — -1 µA VDS = -20V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±8V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) -0.6 -0.8 -1.5 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS(ON) — 25 35 mΩ VGS = -4.5V, ID = -8.9A 34 55 VGS = -2.5V, ID = -6.9A Diode Forward Voltage VSD — -0.8 -1.2 V VGS = 0V, IS = -2.9A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss — 1745 — pF VDS = -10V, VGS = 0V, f = 1.0MHz Output Capacitance Coss — 146 — Reverse Transfer Capacitance Crss — 119 — Gate Resistance Rg 7.5 Ω VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge (VGS = -3.3V) Qg 11.2 nC VDS = -6V, ID = -8.9A Total Gate Charge (VGS = -4.5V) Qg 15.4 Gate-Source Charge Qgs 1.9 Gate-Drain Charge Qgd 2.9 Turn-On Delay Time tD(ON) 7.4 ns VDD = -6V, Rg = 6Ω, VGS = -4.5V, ID = -1A Turn-On Rise Time tR 6.2 Turn-Off Delay Time tD(OFF) 60.1 Turn-Off Fall Time tF 16.3 Body Diode Reverse-Recovery Time tRR 9.2 ns IF= -2.9A, di/dt = -100A/μs Body Diode Reverse-Recovery Charge QRR 2.8 — nC IF = -2.9A, di/dt = -100A/μs Notes: 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing.
© 2023 Copyright Diodes Incorporated. All Rights Reserved. Figure 25. Transient Thermal Resistance
Document number: DS37992 Rev. 5 - 2 9 of 11 www.diodes.com August 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. DMC1015UPD Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. Site 1: PowerDI5060-8 (Type C) Site 2: PowerDI5060-8 (SWP) (Type R) PowerDI5060-8 (Type C) Dim Min Max Typ A 0.90 1.10 1.00 A1 0 0.05 0.02 b 0.33 0.51 0.41 b1 0.300 0.366 0.333 b2 0.20 0.35 0.25 c 0.23 0.33 0.277 D 5.15 BSC D1 4.85 4.95 4.90 D2 1.40 1.60 1.50 D3 - - 3.98 E 6.15 BSC E1 5.75 5.85 5.80 E2 3.56 3.76 3.66 e 1.27BSC k - - 1.27 k1 0.56 - - L 0.51 0.71 0.61 La 0.51 0.71 0.61 L1 0.05 0.20 0.175 L4 - - 0.125 M 3.50 3.71 3.605 x - - 1.400 y - - 1.900 θ 10° 12° 11° θ1 6° 8° 7° All Dimensions in mm PowerDI5060-8 (SWP) (Type R) Dim Min Max Typ A 0.90 1.10 1.00 A1 0 0.05 -- b 0.30 0.50 0.41 b2 0.20 0.35 0.25 b4 0.25REF c 0.230 0.330 0.277 D 5.15 BSC D1 4.70 5.10 4.90 D2 1.40 1.60 1.50 D2a 3.78 4.18 3.98 E 6.40 BSC E1 5.60 6.00 5.80 E2 3.46 3.86 3.66 e 1.27BSC k 1.05 -- -- k1 0.56 -- -- L 0.635 0.835 0.735 La 0.635 0.835 0.735 L1 0.200 0.400 0.300 L1a 0.050REF L4 0.025 0.225 0.125 M 3.205 4.005 3.605 θ 10° 12° 11° θ1 6° 8° 7° All Dimensions in mm DETAIL A 0( 4x) Seating Plane c e 01( 4x) D E y x Ø1.000 Depth 0.07±0.030 A DETAIL A L k M La b( 8x) e/2 b1( 8x) b2( 2x) A L k D2E2 DETAIL A 0( 4x) Seating Plane c e D E DETAIL A b( 8x) e/2 1.900 1.400 0( 4x) b2( 2x) Ø1.000 Depth 0.07±0.030 D2a L1a( 8x) b4( 8x) M La
Document number: DS37992 Rev. 5 - 2 10 of 11 www.diodes.com August 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. DMC1015UPD Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. Site 1: PowerDI5060-8 (Type C) Dimensions Value (in mm) C 1.270 G 0.660 G1 0.820 X 0.610 X1 3.910 X2 1.650 X3 1.650 X4 4.420 Y 1.270 Y1 1.020 Y2 3.810 Y3 6.610 Site 2: PowerDI5060-8 (SWP) (Type R) X C Y( 4x) G X2X3 Dimensions Value (in mm) C 1.270 G 0.660 G1 0.820 X 0.610 X1 3.910 X2 1.650 X3 1.650 X4 4.420 Y 1.270 Y1 1.020 Y2 3.810 Y3 6.610 X C Y( 4x) G X2X3
Document number: DS37992 Rev. 5 - 2 11 of 11 www.diodes.com August 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. DMC1015UPD IMPORTANT NOTICE 1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICUL AR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes’ products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engin eering customers and users who design with Diodes’ products. Diodes’ products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of Diodes’ products for their intended applications, (c) ensuring their applications, which incorporate Diodes’ products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality con trol techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associ ated with their applications. 3. Diodes assumes no liability for any application -related information, support, assistance or feedback that may be provided by Diodes from time to time. 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