DMBT8050 DCCOM | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 1

Technical content

DC COMPONENTS CO., LTD. TECHNICAL SPECIFICA TIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description

Designed for general purpose amplifier applications. Pinning 1 = Base 2 = Emitter 3 = Collector Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 25 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5 V Collector Current IC 500 mA Total Power Dissipation PD 225 mW Junction Temperature TJ +150 oC Storage Temperature TSTG -55 to +150 oC Absolute Maximum Ratings(TA=25oC) Rank C D E Range 120~200 150~350 250~500 Classification of hFE .091(2.30) .067(1.70) SOT-23 Dimensions in inches and (millimeters) .063(1.60) .055(1.40) .108(0.65) .110(2.80) .020(0.50) .012(0.30) .0043(0.11) .0035(0.09) .004 (0.10) .051(1.30) .035(0.90) .026(0.65) .010(0.25) Max .027(0.67) .013(0.32) Characteristic Symbol Min Typ Max Unit Test Conditions Collector-Base Breakdown Volatge BVCBO 25 - - V IC=10µA, IE=0 Collector-Emitter Breakdown Voltage BVCEO 20 - - V IC=1mA, IB=0 Emitter-Base Breakdown Volatge BVEBO 5 - - V IE=10µA, IC=0 Collector Cutoff Current ICBO - - 1 µA VCB=20V, IE=0 Collector-Emitter Saturation Voltage(1) VCE(sat) - - 0.6 V IC=500mA, IB=50mA Base-Emitter Saturation Voltage(1) VBE(sat) - - 1.2 V IC=500mA, IB=50mA DC Current Gain(1) hFE 120 - 500 - IC=50mA, VCE=1V Transition Frequency fT 150 - - MHz IC=20mA, VCE=10V, f=100MHz

Electrical Characteristics

(Ratings at 25oC ambient temperature unless otherwise specified) (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%