DMB53D0UDW
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 7
Technical content
Features
N-Channel MOSFET and NPN Transistor in One Package Low On-Resistance Very Low Gate Threshold Voltage, 1.0V Max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package ESD Protected MOSFET Gate up to 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotive- products/. This part is qualified to JEDEC standards (as references in AEC-Q101) for High Reliability. https://www.diodes.com/quality/product-definitions/ Mechanical Data Package: SOT-363 Package Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Alloy 42 Lead frame. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 5 Ordering Information: See Page 5 Weight: 0.006 grams (Approximate) Maximum Ratings – MOSFET, Q1 (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 50 V Gate-Source Voltage VGSS 12 V Drain Current (Note 4) Continuous ID 160 mA Pulsed Drain Current (Note 4) IDM 560 mA Maximum Ratings – NPN Transistor, Q2 (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 6.0 V Collector Current IC 100 mA Thermal Characteristics, Total Device (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 4) PD 250 mW Thermal Resistance, Junction to Ambient (Note 4) RJA 500 C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 C Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine ( <1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Incorporated’s suggested pad layout document, which can be found on our website at http://www.diodes.com/package-outlines.html. SOT-363 TOP VIEW Internal Schematic TOP VIEW E S D p ro te c te d g a te u p to 2 k V ED 2 S 2 Q 1 G 2 Q 2 B C NOT RECOMMENDED FOR NEW DESIGN CONTACT US
Document number: DS31675 Rev. 7 - 3 2 of 7 www.diodes.com May 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. DMB53D0UDW Electrical Characteristics - MOSFET (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BVDSS 50 V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS 10 µA VDS = 50V, VGS = 0V Gate-Body Leakage IGSS 1.0 5.0 µA VGS = 8V, VDS = 0V VGS = 12V, VDS = 0V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(TH) 0.7 0.8 1.0 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance RDS(ON) 3.1 4 VGS = 4V, ID = 100mA 4 5 VGS = 2.5V, ID = 80mA Forward Transconductance gFS 180 ms VDS = 10V, ID = 100mA, f = 1.0kHz DYNAMIC CHARACTERISTICS Input Capacitance Ciss 25 pF VDS = 10V, VGS = 0V, f = 1.0MHz Output Capacitance Coss 5 pF Reverse Transfer Capacitance Crss 2.1 pF Electrical Characteristics - NPN Transistor (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage (Note 5) V(BR)CBO 50 — — V IC = 10µA, IB = 0 Collector-Emitter Breakdown Voltage (Note 5) V(BR)CEO 45 — — V IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage (Note 5) V(BR)EBO 6 — — V IE = 1µA, IC = 0 DC Current Gain (Note 5) hFE 200 290 450 — VCE = 5.0V, IC = 2.0mA Collector-Emitter Saturation Voltage (Note 5) VCE(SAT) — — 100 300 mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Base-Emitter Saturation Voltage (Note 5) VBE(SAT) — 700 900 — mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Base-Emitter Voltage (Note 5) VBE 580 660 700 770 mV VCE = 5.0V, IC = 2.0mA VCE = 5.0V, IC = 10mA Collector Cut-Off Current (Note 5) ICBO — — 15 5.0 nA µA VCB = 30V VCB = 30V, TA = +150° C Collector-Emitter Cut-Off Current (Note 5) ICES — — -100 nA VCE = -45V Gain Bandwidth Product fT 100 — — MHz VCE = 5.0V, IC = 10mA, f = 100MHz Output Capacitance COBO — — 4.5 pF VCB = 10V, f = 1.0MHz Noise Figure NF — — 10 dB VCE = 5V, RS = 2.0k f = 1.0kHz, BW= 200Hz Note: 5. Short duration pulse test used to minimize self-heating effect.
Document number: DS31675 Rev. 7 - 3 3 of 7 www.diodes.com May 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. DMB53D0UDW MOSFET F ig . 1 T y p ic a l O u tp u t C h a ra c te ris tic s V , D R A IN -S O U R C E V O LTA G E (V )DS I , D R A IN C U R R E N T (A )D 0 .1 0 .2 0 .3 0 .4 0 .5 0 .6 0 .7 0 .8 V = 1 .0 VGS V = 1 .5 VGS V = 2 .5 VGS V = 4 .5 VGS V = 1 0 VGS V = 3 .0 VGS F ig . 3 T y p ic a l O n -R e s is ta n c e v s . D ra in C u rr e n t a n d G a te V o lta g e I , D R A IN C U R R E N T ( A )D R , D R A IN -S O U R C E O N -R E S IS TA N C E ( )D S (O N ) 0 .0 0 1 0 .0 1 0 .1 1 V = 4 .0 VGS V = 2 .5 VGS I , D R A IN C U R R E N T (A ) F ig . 4 T y p ic a l D ra in -S o u rc e O n -R e s is ta n c e v s . D ra in C u r re n t a n d Te m p e ra tu re D R , D R A IN - S O U R C E O N -R E S IS TA N C E ( )D S (O N ) T = -5 5 癈A T = 2 5 癈A T = 8 5 癈A T = 1 2 5 癈A T = 1 5 0 癈A F ig . 5 O n -R e s is ta n c e V a r ia tio n w ith Te m p e ra tu re 0 .6 0 .8 1 .0 1 .2 1 .4 1 .6 1 .8 2 .0 -5 0 -2 5 0 25 50 75 1 0 0 1 2 5 1 5 0 T , J U N C T IO N T E M P E R A T U R E ( 癈 )J R , D R A IN -T O -S O U R C E R E S IS TA N C E (N O R M A L IZ E D ) D S ( O N ) V = 2 .5 V I = 8 0 m A GS D V = 4 V I = 1 0 0 m A GS D 0 .4 F ig . 6 T y p ic a l C a p a c ita n c e 0 5 10 15 20 25 30 35 40 V , D R A IN -S O U R C E V O LTA G E (V )DS C , C A P A C ITA N C E (p F ) f = 1 M H z V = 0 VGS C is s C o s s C rs s Fig. 2 Typical Transfer Characteristics V , GATE SOURCE VOLTAGE (V) GS I D R A I N C U R R E N T ( A ) D 0.1 0.2 0.3 0.4 0.5 0 1 2 3 4 V = 10V DS T = -55° C A T = 25° C A T = 125° C A T = 150° C A T = 85° C A ID, DRAIN CURRENT (A) TA = 25°C TA = -55°C TA = 85°C TA = 125°C TA = 150°C (°C)
Document number: DS31675 Rev. 7 - 3 4 of 7 www.diodes.com May 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. DMB53D0UDW MOSFET (continued) V , G A T E T H R E S H O L D V O LTA G E (V )G S (T H ) F ig . 7 G a te T h re s h o ld V a ria tio n v s . A m b ie n t Te m p e ra tu re -5 0 -2 5 0 25 50 75 1 0 0 1 2 5 1 5 0 T , A M B IE N T T E M P E R A T U R E ( 癈 )A 0 .5 0 .6 0 .7 0 .8 0 .9 1 .0 1 .1 I = 2 5 0 礎D V , S O U R C E -D R A IN V O LTA G E (V )SD I , S O U R C E C U R R E N T (A )S F ig . 8 D io d e F o rw a rd V o lta g e v s . C u rr e n t 0 .0 0 0 1 0 .0 0 1 0 .0 1 0 .1 T = -5 5 癈A T = 2 5 癈A T = 8 5 癈A T = 1 2 5 癈A T = 1 5 0 癈A -5 0 0 50 1 0 0 1 5 0 2 5 0 2 0 0 1 5 0 1 0 0 T , A M B IE N T T E M P E R A T U R E ( C ) F ig . 9 D e ra tin g C u r v e - To ta l P a c k a g e P o w e r D is s ip a tio n A ° P , P O W E R D IS S IP AT IO N (m W )D 3 0 0 R C /WJA = 5 0 0 ID=250µA (°C) TA = 25°C TA = -55°C TA = 85°C TA = 125°C TA = 150°C
Document number: DS31675 Rev. 7 - 3 5 of 7 www.diodes.com May 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. DMB53D0UDW NPN Transistor 1 0 0 1 ,0 0 0 10 1 0 0 1 ,0 0 01 h D C C U R R E N T G A IN F E , I , C O L L E C T O R C U R R E N T (m A ) F ig . 1 0 Ty p ic a l D C C u rre n t G a in v s . C o lle c to r C u rre n t C T = 2 5 CA ° T = -5 0 CA ° T = 1 5 0 CA ° 10 .1 10 1 0 0 1 ,0 0 0 V , C O L L E C T O R -E M IT T E R S A T U R A T IO N V O LTA G E (V ) C E (S AT ) I , C O L L E C T O R C U R R E N T (m A ) F ig . 11 T y p ic a l C o lle c to r-E m itte r S a tu ra tio n V o lta g e v s . C o lle c to r C u rr e n t C T = 2 5 癈A T = -5 0 癈A T = 1 5 0 癈A 0 .1 0 .2 0 .3 0 .4 I I C B = 2 0 1 0 0 1 ,0 0 0 1 10 1 0 0 f , G A IN -B A N D W ID T H P R O D U C T (M H z )T I , C O L L E C T O R C U R R E N T (m A ) F ig . 1 2 Ty p ic a l G a in -B a n d w id th P ro d u c t v s . C o lle c to r C u rre n t C V = 5 VCE Ordering Information (Note 6) Part Number Package Packing Qty. Carrier DMB53D0UDW-7 SOT-363 3000 Tape & Reel Note: 6. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information Date Code Key Year 2008 … 2022 2023 2024 2025 2026 2027 2028 2029 2030 2031 Code V … J K L M N O P R S T Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D MB1 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: J = 2022) M = Month (ex: 5 = May) Y MM1B TA = 25°C TA = -50°C TA = 150°C
Document number: DS31675 Rev. 7 - 3 6 of 7 www.diodes.com May 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. DMB53D0UDW Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT-363 Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT-363 SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Typ F 0.40 0.45 H 1.80 2.20 J 0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.22 0° 8° All Dimensions in mm Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C1 1.9 C2 0.65 A M J LD B C H K F X Z Y C2C2 G
Document number: DS31675 Rev. 7 - 3 7 of 7 www.diodes.com May 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. DMB53D0UDW IMPORTANT NOTICE 1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR P URPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes’ products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineeri ng customers and users who design with Diodes’ products. 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