DM0565

FSDM0565RB_06 FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

• Internal Avalanche Rugged Sense FET
• Advanced Burst-Mode operation consumes under 1 W at 240V AC & 0.5W load
• Precision Fixed Operating Frequency (66kHz)
• Internal Start-up Circuit
• Improved Pulse by Pulse Current Limiting
• Over V oltage Protection (OVP)
• Over Load Protection (OLP)
• Internal Thermal Shutdown Function (TSD)
• Auto-Restart Mode
• Under V oltage Lock Out (UVLO) with hysteresis
• Low Operating Current (2.5mA) Built-in Soft Start Application
• SMPS for LCD monitor and STB
• Adaptor

Description

The FSDM0565RB is an integrated Pulse Width Modulator (PWM) and Sense FET specifically designed for high performance offline Switch Mode Power Supplies (SMPS) with minimal external components. This device is an integrated high voltage power switching regulator which combine an avalanche rugged Sense FET with a current mode PWM control block. The PWM controller includes integrated fixed frequency oscillator, under voltage lockout, leading edge blanking (LEB), optimized gate driver, internal soft start, temperature compensated precise current sources for a loop compensation and self protection circuitry. Compared with discrete MOSFET and PWM controller solution, it can reduce total cost, component count, size and weight simultaneously increasing efficiency, productivity, and system reliability. This device is a basic platform well suited for cost effective designs of flyback converters. Table 1. Maximum Output Power

1. Typical continuous power in a non-ventilated enclosed

adapter measured at 50°C ambient.

1. Maximum practical continuous power in an open frame
2. 230 VAC or 100/115 VAC with doubler.

Figure 1. Typical Flyback Application

Figure 2. Functional Block Diagram of FSDM0565RB

Figure 3. Pin Configuration (Top View) 2 GND This pin is the control ground and the Sense FET source. plied by an internal high voltage current source that is connected to the Vstr pin. the power is supplied from the auxiliary transformer winding. This pin is internally connected to the inverting input of the PWM comparator.

(Ta=25°C, unless otherwise specified) Notes: 1. Repetitive rating: Pulse width limited by maximum junction temperature 2. L=14mH, starting Tj=25°C 3. L=13uH, starting Tj=25°C Thermal Impedance Notes: 1. Free standing with no heat-sink under natural convection. 2. Infinite cooling condition - Refer to the SEMI G30-88. Parameter Symbol Value Unit Drain-source voltage V DSS 650 V Vstr Max Voltage V STR 650 V Pulsed Drain current (Tc=25°C)(1) IDM 11 A DC Continuous Drain Current(Tc=25°C) ID 2.8 A Continuous Drain Current(Tc=100°C) 1.7 A Single pulsed avalanche energy (2) EAS 190 mJ Single pulsed avalanche current (3) IAS -A Supply voltage V CC 20 V Input voltage range V FB -0.3 to VCC V Total power dissipation(Tc=25°C) PD(Watt H/S) (TO-220-6L) W75 (I2-PAK-6L) Operating junction temperature T j Internally limited °C Operating ambient temperature T A -25 to +85 °C Storage temperature range T STG -55 to +150 °C ESD Capability, HBM Model (All pins excepts for Vstr and Vfb) - 2.0 (GND-Vstr/Vfb=1.5kV) kV ESD Capability, Machine Model (All pins excepts for Vstr and Vfb) - 300 (GND-Vstr/Vfb=225V) V Parameter Symbol Package Value Unit Junction-to-Ambient Thermal θJA(1) TO-220F-6L 49.90 °C/W I2-PAK-6L 30 Junction-to-Case Thermal θJC(2) TO-220F-6L 2.78 °C/WI2-PAK-6L 1.67

Electrical Characteristics

(Ta = 25°C unless otherwise specified) Parameter Symbol Condition Min. Typ. Max. Unit Sense FET SECTION Drain source breakdown voltage BV DSS VGS = 0V, ID = 250μA 650 - - V Zero gate voltage drain current I DSS VDS = 650V, VGS = 0V - - 500 μA VDS= 520V VGS = 0V, TC = 125°C - - 500 μA Static drain source on resistance (1) RDS(ON) VGS = 10V, ID = 2.5A - 1.76 2.2 Ω Output capacitance C OSS VGS = 0V, VDS = 25V, f = 1MHz -7 8 -p F Turn on delay time T D(ON) VDD= 325V, ID= 5A (MOSFET switching time is essentially independent of operating temperature) -2 2 - ns Rise time T R -5 2 - Turn off delay time T D(OFF) -9 5 - Fall time T F -5 0 - CONTROL SECTION Initial frequency F OSC VFB = 3V 60 66 72 kHz Voltage stability F STABLE 13V ≤ Vcc ≤ 18V 0 1 3 % Temperature stability (2) ΔFOSC -25°C ≤ Ta ≤ 85°C0 ±5± 1 0% Maximum duty cycle D MAX -7 7 8 2 8 7 % Minimum duty cycle D MIN -- - 0 % Start threshold voltage V START VFB=GND 11 12 13 V Stop threshold voltage V STOP VFB=GND 7 8 9 V Feedback source current I FB VFB=GND 0.7 0.9 1.1 mA Soft-start time T S Vfb=3 - 10 15 ms Leading Edge Blanking time T LEB - - 250 - ns BURST MODE SECTION Burst Mode Voltages (2) VBURH Vcc=14V - 0.7 - V VBURL Vcc=14V - 0.5 - V PROTECTION SECTION Peak current limit (4) IOVER VFB=5V, VCC=14V 2.0 2.25 2.5 A Over voltage protection V OVP -1 8 1 9 2 0 V Thermal shutdown temperature (2) TSD 130 145 160 °C Shutdown feedback voltage V SD VFB ≥ 5.5V 5.5 6.0 6.5 V Shutdown delay current I DELAY VFB=5V 2.8 3.5 4.2 μA

Notes: 1. Pulse test : Pulse width ≤ 300μS, duty ≤ 2% 2. These parameters, although guaranteed at the design, are not tested in mass production. 3. These parameters, although guaranteed, are tested in EDS(wafer test) process. 4. These parameters indicate the inductor current. 5. This parameter is the current flowing into the control IC. TOTAL DEVICE SECTION Operating supply current (5) IOP VFB=GND, VCC=14V -2 . 55m AIOP(MIN) VFB=GND, VCC=10V IOP(MAX) VFB=GND, VCC=18V

Comparison Between FS6M07652RTC and FSDM0565RB Function FS6M07652RTC FSDM0565RB FSDM0565RB Advantages Soft-Start Adjustable soft-start time using an external capacitor Internal soft-start with typically 10ms (fixed)

• Gradually increasing current limit during soft-start further reduces peak current and voltage component stresses
• Eliminates external components used for soft-start in most applications
• Reduces or eliminates output overshoot Burst Mode Operation • Built into controller
• Output voltage drops to around half
• Built into controller
• Output voltage fixed
• Improve light load efficiency
• Reduces no-load consumption

Typical Performance Characteristics (These Characteristic Graphs are Normalized at Ta= 25°C) 0. 0 0. 2 0. 4 0. 6 0. 8 1. 0 1. 2 -25 0 25 50 75 100 125 150 Junction Temperature(℃) Operating Frequency (Fosc) 0. 0 0. 2 0. 4 0. 6 0. 8 1. 0 1. 2 -25 0 25 50 75 100 125 150 Junction Temperature(℃) Start Thershold Voltage (Vstart) 0. 0 0. 2 0. 4 0. 6 0. 8 1. 0 1. 2 -25 0 25 50 75 100 125 150 Junction Temperature(℃) Stop Threshold Voltage (Vstop) 0. 0 0. 2 0. 4 0. 6 0. 8 1. 0 1. 2 -25 0 25 50 75 100 125 150 Junction Temperature(℃) Maximum Duty Cycle (Dmax) Operating Current vs. Temp Start Threshold Voltage vs. Temp Stop Threshold Voltage vs. Temp Operating Freqency vs. Temp Maximum Duty vs. Temp Feedback Source Current vs. Temp 0. 0 0. 2 0. 4 0. 6 0. 8 1. 0 1. 2 -25 0 25 50 75 100 125 150 Junction Temperature(℃) Operating Current (Iop) 0. 0 0. 2 0. 4 0. 6 0. 8 1. 0 1. 2 -25 0 25 50 75 100 125 150 Junction Temperature(℃) FB Source Current (Ifb)

Typical Performance Characteristics (Continued) (These Characteristic Graphs are Normalized at Ta= 25°C) 0. 0 0. 2 0. 4 0. 6 0. 8 1. 0 1. 2 -25 0 25 50 75 100 125 150 Junction Temperature(℃) Shutdown Delay Current (Idelay) 0. 0 0. 2 0. 4 0. 6 0. 8 1. 0 1. 2 -25 0 25 50 75 100 125 150 Junction Tem perature(℃) Over Voltage Protection (Vovp) 0. 0 0. 2 0. 4 0. 6 0. 8 1. 0 1. 2 -50 -25 0 25 50 75 100 125 Junction Temperature(℃) Peak Current Limit(Self protection) (Iover) 0. 0 0. 2 0. 4 0. 6 0. 8 1. 0 1. 2 -25 0 25 50 75 100 125 150 Junction Tem perature(℃) FB Burst Mode Enable Voltage (Vfbe) 0. 0 0. 2 0. 4 0. 6 0. 8 1. 0 1. 2 -25 0 25 50 75 100 125 150 Junction Tem perature(℃) FB Burst Mode Disable Voltage (Vfbd) ShutDown Feedback Voltage vs. Temp ShutDown Delay Current vs. Temp Over Voltage Protection vs. Temp Burst Mode Enable Voltage vs. Temp Burst Mode Disable Voltage vs. Temp Current Limit vs. Temp 0. 0 0. 2 0. 4 0. 6 0. 8 1. 0 1. 2 -25 0 25 50 75 100 125 150 Junction Temperature(℃) Shutdown FB Voltage (Vsd)

Typical Performance Characteristics (Continued) (These Characteristic Graphs are Normalized at Ta= 25°C) Soft Start Time vs. Temp 0. 0 0. 2 0. 4 0. 6 0. 8 1. 0 1. 2 -50 -25 0 25 50 75 100 125 Junction Temperature(℃) Soft Start Time (Normalized to 25℃)

1. Startup : In previous generations of Fairchild Power

Figure 4. When Vcc reaches 12V , the FSDM0565RB begins Figure 4. Internal startup circuit

1. Feedback Control : FSDM0565RB employs current

are typically used to implement the feedback network. or the output load is decreased.

2.1 Pulse-by-pulse current limit : Because current mode

the current through the Sense FET is limited.

2.2 Leading edge blanking (LEB) : At the instant the

capacitance and secondary-side rectifier reverse recovery. Figure 5. Pulse width modulation (PWM) circuit

1. Protection Circuit : The FSDM0565RB has several self

voltage protection (OVP) and thermal shutdown (TSD).

6 Vstr

4 OSC

Figure 6. Auto restart operation

3.1 Over Load Protection (OLP) : Overload is defined as

Figure 7. Over load protection

3.2 Over voltage Protection (OVP) : If the secondary side

3.3 Thermal Shutdown (TSD) : The Sense FET and the

the thermal shutdown is activated.

1. Soft Start : The FSDM0565RB has an internal soft start

reduce the stress on the secondary diode during startup.

1. Burst operation : In order to minimize power dissipation

Figure 8. Waveforms of burst operation

Typical application circuit

• High efficiency (>81% at 85Vac input)
• Low zero load power consumption (<300mW at 240Vac input)
• Low standby mode power consumption (<800mW at 240Vac input and 0.3W load)
• Low component count
• Enhanced system reliability through various protection functions
• Internal soft-start (10ms) Key Design Notes
• Resistors R102 and R105 are employed to prevent start-up at low input voltage. After startup, there is no power loss in these resistors since the startup pin is internally disconnected after startup.
• The delay time for over load protection is designed to be a bout 50ms with C106 of 47nF. If a faster triggering of OLP is required, C106 can be reduced to 10nF.
• Zener diode ZD102 is used for a safety test such as UL. When the drain pin and feedback pin are shorted, the zener diode fails and remains short, which causes the fuse (F1) blown and prevents explosion of the opto-coupler (IC301). This zener diode also increases the immunity against line surge. 1. Schematic Application Output power Input vo ltage Output voltage (Max current) LCD Monitor 40W Universal input (85-265Vac) 5V (2.0A) 12V (2.5A) C102 220nF 275VAC LF101 23mH C101 220nF 275VAC RT1 5D-9 FUSE 250V C103 100uF 400V R102 30kΩ R105 40kΩ R103 56kΩ C104 2.2nF 1kV D101 UF 4007 C106 47nF 50V C105 22uF 50V D102 TVR10G R104 EER3016 BD101 2KBP06M3N257 R101 560kΩ IC1 FSDM0565RB Vstr NC Vfb Vcc Drain GND ZD101 22V D202 MBRF10100 C201 1000uF 25V C202 1000uF 25V L201 12V, 2.5A D201 MBRF1045 C203 1000uF 10V C204 1000uF 10V L202 5V, 2A R201 1kΩ R202 1.2kΩ R204 5.6kΩ R203 12kΩ C205 47nF R205 5.6kΩ C301 4.7nF IC301 H11A817A IC201 KA431 ZD102 10V

1. Transformer Schematic Diagram 3.Winding Specification 4.Electrical Characteristics 5. Core & Bobbin Core : EER 3016 Bobbin : EER3016 Ae(mm2) : 96 No Pin (s →f) Wire Turns Winding Method Na 4 → 50 . 2 φ × 1 8 Center Winding Insulation: Polyester Tape t = 0.050mm, 2Layers Np/2 2 → 10 . 4 φ × 1 18 Solenoid Winding Insulation: Polyester Tape t = 0.050mm, 2Layers N12V 10 → 80 . 3 φ × 3 7 Center Winding Insulation: Polyester Tape t = 0.050mm, 2Layers N5V 7 → 60 . 3 φ × 3 3 Center Winding Insulation: Polyester Tape t = 0.050mm, 2Layers Np/2 3 → 20 . 4 φ × 1 18 Solenoid Winding Outer Insulation: Polyester Tape t = 0.050mm, 2Layers Pin Specification Remarks Inductance 1 - 3 520uH ± 10% 100kHz, 1V Leakage Inductance 1 - 3 10uH Max 2 nd all short EER3016 Np/2 N 12V Na 5 6 Np/2 N5V

6.Demo Circuit Part List Part Value Note Part Value Note Fuse C301 4.7nF Polyester Film Cap. F101 2A/250V NTC Inductor RT101 5D-9 L201 5uH Wire 1.2mm Resistor L202 5uH Wire 1.2mm R101 560K 1W R102 30K 1/4W R103 56K 2W R104 5 1/4W Diode R105 40K 1/4W D101 UF4007 R201 1K 1/4W D102 TVR10G R202 1.2K 1/4W D201 MBRF1045 R203 12K 1/4W D202 MBRF10100 R204 5.6K 1/4W ZD101 Zener Diode 22V R205 5.6K 1/4W ZD102 Zener Diode 10V Bridge Diode BD101 2KBP06M 3N257 Bridge Diode Capacitor C101 220nF/275VAC Box Capacitor Line Filter C102 220nF/275VAC Box Capacitor LF101 23mH Wire 0.4mm C103 100uF/400V Electrolytic Capacitor IC C104 2.2nF/1kV Ceramic Capacitor IC101 FSDM0565RB FPS TM(5A,650V) C105 22uF/50V Electrolytic Capacitor IC201 KA431(TL431) Voltage reference C106 47nF/50V Ceramic Capacitor IC301 H11A817A Opto-coupler C201 1000uF/25V Electrolytic Capacitor C202 1000uF/25V Electrolytic Capacitor C203 1000uF/10V Electrolytic Capacitor C204 1000uF/10V Electrolytic Capacitor C205 47nF/50V Ceramic Capacitor

TO-220F-6L(Forming)

Package Dimensions (Continued) I2-PAK-6L(Forming)

1/9/06 0.0m 001 © 2006 Fairchild Semiconductor Corporation LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

Ordering Information

WDTU : Forming Type Product Number Package Marki ng Code BVdss Rds(on)Max. FSDM0565RBWDTU TO-220F-6L(Forming) DM0565R 650V 2.2 Ω FSDM0565RBIWDTU I2-PAK- 6L (Forming) DM0565R 650V 2.2 Ω